Download Effect Transistors (FETs)

Chapter 5
Field-Effect Transistors (FETs)
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Content

Physical operation and current-voltage
characteristics
 DC analysis
 Biasing in MOS amplifier circuit and basic
configuration
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Physical operation and
current -voltage characteristics
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Introduction to FET

FET: Field Effect Transistor
 There are two types



MOSFET: metal-oxide-semiconductor FET
JFET: Junction FET
MOSFET is also called the insulated-gate FET or
IGFET.




Quite small
Simple manufacturing process
Low power consumption
Widely used in VLSI circuits(>800 million on a single IC chip)
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Device structure of MOSFET (n-type)
Source(S)
Gate(G)
(SiO2)
n+
Drain(D)
Oxide
Metal
Channel area
n+
p-type Semiconductor
Substrate (Body)
Body(B)

For normal operation, it is needed to create a
conducting channel between Source and Drain
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Creating a channel for current flow
An n channel can be induced at
the top of the substrate beneath
the gate by applying a positive
voltage to the gate
The channel is an inversion
layer
The value of VGS at which a
sufficient number of mobile
electrons accumulate to form a
conducting channel is called the
threshold voltage (Vt)
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Device structure of MOSFET (n-type)
L = 0.1 to 3 mm
W = 0.2 to 100 mm
Tox= 2 to 50 nm
Cross-section view
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Classification of FET

According to the type of the channel, FETs can
be classified as

MOSFET



N channel
P channel
•Enhancement type
•Depletion type
•Enhancement type
•Depletion type
JFET

P channel

N channel
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Drain current under small voltage vDS
An NMOS transistor with vGS > Vt and with a small vDS
applied.
 The channel depth is uniform and the device acts as a
resistance.
The channel conductance is
proportional to effective voltage,
or excess gate voltage, (vGS – Vt) .
Drain current is proportional to
(vGS – Vt) and vDS.
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Drain current under small voltage vDS
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Operation as vDS is increased
 The induced channel acquires a tapered shape.
 Channel resistance increases as vDS is increased.
 Drain current is controlled by both of the two voltages.
B
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Channel pinched off

When VGD = Vt or VGS - VDS = Vt , the channel is
pinched off


Inversion layer disappeared at the drain point
Drain current does not disappeared!
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Drain current under pinch off
• The electrons pass through the pinch off area at very
high speed so as the current continuity holds, similar to
the water flow at the Yangtze Gorges
Pinched-off channel
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Drain current under pinch off

Drain current is saturated and only controlled by
the vGS
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Drain current controlled by vGS
 vGS creates the channel.
 Increasing vGS will increase
the conductance of
the channel.
 At saturation region only the vGS controls the
drain current.
 At subthreshold region, drain current has the
exponential relationship with vGS
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p channel device

Two reasons for readers to be
familiar with p channel device
Existence in discrete-circuit.
 More important is the
utilization of complementary
MOS or CMOS circuits.

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p channel device

Structure of p channel device
 The substrate is n type and the inversion layer is p type.
 Carrier is hole.
 Threshold voltage is negative.
 All the voltages and currents are opposite to the ones of n
channel device.
 Physical operation is similar to that of n channel device.
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Complementary MOS or CMOS
 The PMOS transistor is formed in n well.
 Another arrangement is also possible in which an n-type body is used and
the n device is formed in a p well.
 CMOS is the most widely used of all the analog and digital IC circuits.
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Current-voltage characteristics

Circuit symbol
 Output characteristic curves
 Channel length modulation
 Characteristics of p channel device
 Body effect
 Temperature effects and Breakdown Region
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Circuit symbol
(a) Circuit symbol for the n-channel enhancement-type MOSFET.
(b) Modified circuit symbol with an arrowhead on the source terminal to
distinguish it from the drain and to indicate device polarity (i.e., n channel).
(c)
Simplified circuit symbol to be used when the source is connected to the
body or when the effect of the body on device operation is unimportant.
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Output characteristic curves of NMOS
(a) An n-channel enhancementtype MOSFET with vGS and vDS
applied and with the normal
directions of current flow
indicated.
(b) The iD–vDS characteristics for a
device with k’n (W/L) = 1.0
mA/V2.
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Output characteristic curves of NMOS
• Three distinct region
 Cutoff region
 Triode region
 Saturation region
• Characteristic equations
• Circuit model
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Cutoff region
• Biased voltage
vGS  Vt
• The transistor is turned off.
iD  0
• Operating in cutoff region as a switch.
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Triode region
•
Biased voltage
vGS  Vt
vDS  vGS  Vt
•
The channel depth changes from uniform to tapered
shape.
•
Drain current is controlled not only by vDS but also
by vGS
W
L
W
 kn '
L
iD  k n '
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
2
(
v

V
)
v

v
t
DS
DS 
 GS
2

(vGS  Vt )vDS
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process transconductance parameter
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Triode region
• Assuming that the draint-source voltage is
sufficiently small, the MOS operates as a linear
resistance
rDS 

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vDS
iD
1

1
vGS VGS
W
kn '
VOV
L
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W
kn '
(VGS  Vt )
L
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Saturation region
•
Biased voltage
vGS  Vt
vDS  vGS  Vt
•
The channel is pinched off.
•
Drain current is controlled only by vGS
W
iD  k n ' （vGS  Vt ) 2
L
1
2
•
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Drain current is independent of vDS and behaves as
an ideal current source.
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Saturation region
 The iD–vGS characteristic for
an enhancement-type NMOS
transistor in saturation
 Vt = 1 V, k’n W/L = 1.0
mA/V2
 Square law of iD–vGS
characteristic curve.
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Channel length modulation
• Explanation for channel length modulation
 Pinched point moves to source terminal with the
voltage vDS increased.
 Effective channel length reduced
 Channel resistance decreased
 Drain current increases with the voltage vDS
increased.
• Current drain is modified by the channel
length modulation
W
2
iD  12 k n ' （vGS  Vt )（
1＋vDS )
L
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Channel length modulation
The MOSFET parameter VA depends on the process technology and, for a
given process, is proportional to the channel length L.
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Channel length modulation
• MOS transistors don’t behave an ideal current
source due to channel length modulation.
• The output resistance is finite.
 iD 
ro  


v
 DS 
1
vGS  const.
1
VA


I D
ID
• The output resistance is inversely proportional to
the drain current.
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Large-signal equivalent circuit model
Large-signal equivalent circuit model of the n-channel
MOSFET in saturation, incorporating the output resistance
ro. The output resistance models the linear dependence of iD
on vDS
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Characteristics of p channel device
(a) Circuit symbol for the p-channel enhancement-type MOSFET.
(b) Modified symbol with an arrowhead on the source lead.
(c) Simplified circuit symbol for the case where the source is connected to the
body.
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Characteristics of p channel device
The MOSFET with voltages applied and the directions of
current flow indicated.
The relative levels of the terminal voltages of the
enhancement-type PMOS transistor for operation in the triode
region and in the saturation region.
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Characteristics of p channel device
Large-signal equivalent circuit model of the p-channel
MOSFET in saturation, incorporating the output resistance
ro. The output resistance models the linear dependence of iD
on vDS
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The body effect

In discrete circuit usually there is no body effect due
to the connection between body and source terminal.
 In IC circuit the substrate is connected to the most
negative power supply for NMOS circuit in order to
maintain the pn junction reversed biased.
 The body effect---the body voltage can control iD





Widen the depletion layer
Reduce the channel depth
Threshold voltage is increased
Drain current is reduced
The body effect can cause the performance
degradation.
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Temperature effects and breakdown region

Drain current will decrease when the
W
temperature increase.
1
iD  2 k n ' （vGS  Vt ) 2
L
 Breakdown
 Avalanche
breakdown
 Punched-through
 Gate oxide breakdown
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MOS管注意事项

MOS管栅-衬之间的电容很小，只要有少量的
感应电荷就可产生很高的电压。
 由于RGS(DC)很大，感应电荷难于释放，感应电
荷所产生的高压会使很薄的绝缘层击穿，造成
管子损坏。
 因此，在存放、焊接和电路设计时要多加注意，
应给栅-源之间提供直流通路，避免栅极悬空。
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MOS管注意事项

MOS器件出厂时通常装在黑色的导电泡沫
塑料袋中，切勿自行随便拿个塑料袋装。
可用细铜线把各个引脚连接在一起，或用
锡纸包装。
 取出的MOS器件不能在塑料板上滑动，应
用金属盘来盛放待用器件。
 焊接用的电烙铁必须良好接地。
 在焊接前应把电路板的电源线与地线短接，
待MOS器件焊接完成后再分开。
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MOS管注意事项

MOS器件各引脚的焊接顺序是漏极、源极、
栅极。拆机时顺序相反。
 电路板在装机之前，要用接地的线夹子去
碰一下机器的各接线端子，再把电路板接
上去。
 MOS场效应晶体管的栅极在允许条件下，
最好接入保护二极管。在检修电路时应注
意查证原有的保护二极管是否损坏。
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• DC analysis
• Biasing in MOS amplifier circuit and basic
configuration
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MOSFET amplifier: DC analysis
1.
Assuming device operates in saturation thus iD
satisfies with iD~vGS equation.
2.
According to biasing method, write voltage loop
equation.
3.
Combining above two equations and solve these
equations.
4.
Usually we can get two value of vGS, only the one of
two has physical meaning.
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DC analysis
5. Checking
i.
ii.
the value of vDS
if vDS≥vGS-Vt, the assuming is correct.
if vDS≤vGS-Vt, the assuming is not correct. We shall
use triode region equation to solve the problem
again.
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Examples of DC analysis
The NMOS transistor is
operating in the saturation
region due to
Vt  2V
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VGD  Vt
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Examples of DC analysis
Assuming the MOSFET operate in the saturation region
Checking the validity of the assumption
If not to be valid, solve the problem again for triode region
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The MOSFET as an amplifier
Basic structure of the
common-source amplifier
Graph determining the
transfer characteristic
of the amplifier
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The MOSFET as an amplifier and as a switch
 Transfer characteristic
showing operation as an
amplifier biased at point Q.
 Three segments:
vo
Time
 XA---the cutoff region
segment
 AQB---the saturation
region segment
 BC---the triode region
segment
vI
vi
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Time
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Homework
 April

2, 2008:
5.2；5.4；5.9；5.10；
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Biasing in MOS amplifier circuits

Voltage biasing scheme



Biasing by fixing voltage
(constant VGS)
Biasing with feedback
resistor
Current-source biasing
scheme
Disadvantage of fixing biasing
Fixing biasing may result in large ID variability due to deviation
in device performance
Current becomes temperature dependent
 Unsuitable biasing method
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Biasing in MOS with feedback resistor
Biasing using a resistance in the source lead can reduce the
variability in ID
Coupling of a signal source to the gate using a capacitor CC1
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Biasing in MOS with current-source
Biasing the MOSFET using a
constant-current source I
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Implementing a constant-current
source using a current mirror
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Small-signal operation and models
 The
ac characteristic

Definition of transconductance

Definition of output resistance

Definition of voltage gain
 Small-signal
model

Hybrid π model

T model

Modeling the body effect
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The conceptual circuit
 Conceptual circuit utilized to study
the operation of the MOSFET as a
small-signal amplifier.
 Small signal condition
v gs  2(VGS  Vt )
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The small-signal models
Without the channel-length
modulation effect
iD
gm 
vGS
vGS VGS
W
 k n ' VOV
L
—transconductance
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With the channel-length
modulation the effect by
including an output resistance
vDS
ro 
iD
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iD  I D
VA

ID
The small-signal models
The T model of the MOSFET
augmented with the drain-tosource resistance ro
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An alternative representation
of the T model
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Modeling the body effect
Small-signal equivalent-circuit model of a MOSFET in
which the source is not connected to the body.
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Single-stage MOS amplifier

Characteristic parameters

Three configurations
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
Common-source configuration

Common-drain configuration

Common-gate configuration
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Definitions
vi
Input resistance with no load
Ri 
ii
vi
Rin 
 Input resistance
ii
vo
A

 Open-circuit voltage gain
vo

vi

Voltage gain
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vo
Av 
vi
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RL  
RL  
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Definitions



Short-circuit current gain
Current gain
i
Ai  o
ii
io
Ais 
ii
Short-circuit transconductance gain
RL  0
Gm 
v0
 Open-circuit overall voltage gain Gvo 
vsig
v0
 Overall voltage gain Gv 
vsig
v
 Output resistance Rout  x
ix v 0
sig
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io
vi
RL  
RL  0
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Relationships


Voltage divided coefficient
vi
Rin

vsig Rin  Rsig
Rin
RL
Gv 
Avo
Rin  Rsig
RL  Ro
RL
Av  Avo
RL  Ro
Ri
Gvo 
Avo
Ri  Rsig
Avo  Gm Ro
RL
Gv  Gvo
RL  Rout
Hence the appropriate configuration should be
chosen according to the signal source and load
properties, such as source resistance, load resistance,
etc
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Basic structure of the circuit
Basic structure of the circuit
used to realize single-stage
discrete-circuit MOS
amplifier configurations.
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The common-source amplifier
The simplest common-source
amplifier biased with constantcurrent source.
CC1 And CC2 are coupling
capacitors.
CS is the bypass capacitor.
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Equivalent circuit of the CS amplifier
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Equivalent circuit of the CS amplifier
Small-signal analysis performed directly on the amplifier circuit
with the MOSFET model implicitly utilized.
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Characteristics of CS amplifier

Input resistance
Rin  RG

Voltage gain
Av   g m (ro // RD // RL )

Overall voltage gain Gv  

Output resistance

Rout  ro // RD
Summary of CS amplifier



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RG
g m ( RD // RL // ro )
RG  Rsig
Very high input resistance
Moderately high voltage gain
Relatively high output resistance
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The CS amplifier with a source resistance
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Small-signal equivalent circuit with ro neglected

Voltage gain
Av  

g m ( RD // RL )
1  g m RS
Overall voltage gain
RG
g m ( RD // RL )
Gv  
RG  Rsig 1  g m RS


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RS takes the effect of
negative feedback
Gain is reduction by
(1+gmRS)
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The Common-Gate amplifier
Biasing with constant
current source I
Input signal vsig is
applied to the source
Output is taken at the
drain
Gate is signal grounded
CC1 and CC2 are coupling
capacitors
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The CG amplifier
A small-signal equivalent
circuit
T model is used in
preference to the π model
Ro is neglecting
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The CG amplifier fed with a current-signal input

Voltage gain
Av  g m ( RD // RL )

Overall voltage gain
g m ( RD // RL )
Gv 
1  g m Rsig
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Summary of CG amplifier

Noninverting amplifier
 Low input resistance
 Relatively high output resistance
 Current follower
 Superior high-frequency performance
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The common-drain or source-follower amplifier
Biasing with current source
Input signal is applied to gate, output signal is taken at the source
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The CD or source-follower amplifier
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 Small-signal equivalentcircuit model
 T model makes analysis
simpler
 Drain is signal grounded
Overall voltage gain
RG
ro // RL
Gv 
1
RG  Rsig r // R  1
o
L
gm
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Circuit for determining the output resistance
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Summary of CD or source-follow amplifier

Very high input resistance
 Voltage gain is less than but close to unity
 Relatively low output resistance
 Voltage buffer amplifier
 Power amplifier
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Summary and comparisons

The CS amplifier is the best suited for obtaining the
bulk of gain required in an amplifier.

Including resistance RS in the source lead of CS
amplifier provides a number of improvements in its
performance.

The low input resistance of CG amplifier makes it useful
only in specific application. It has excellent highfrequency response. It can be used as a current buffer.

Source follower finds application as a voltage buffer and
as the output stage in a multistage amplifier.
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The internal capacitance and high-frequency model

Internal capacitances

The gate capacitive effect





The junction capacitances



Triode region
Saturation region
Cutoff region
Overlap capacitance
Source-body depletion-layer capacitance
drain-body depletion-layer capacitance
High-frequency model
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The gate capacitive effect

MOSFET operates at triode region
C gs  C gd  12 WLCox

MOSFET operates at saturation region
C gs  23 WLC ox

C gd  0

MOSFET operates at cutoff region
C gs  C gd  0

C gb  WLCox
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Overlap capacitance




Overlap capacitance results from the fact that the source and
drain diffusions extend slightly under the gate oxide.
The expression for overlap capacitance Cov  WLovCox
Typical value Lov  0.05  0.1L
This additional
component should be
added to Cgs and Cgd in
all preceding formulas
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The junction capacitances
•
Source-body depletion-layer capacitance
C sb 
•
C sb0
V
1＋ SB
Vo
drain-body depletion-layer capacitance
C db 
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C db 0
V
1＋ DB
Vo
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High-frequency model
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High-frequency model
The equivalent circuit for the
case in which the source is
connected to the substrate
(body)
The equivalent circuit model with
Cdb neglected (to simplify analysis)
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The MOSFET unity-gain frequency

Current gain
Io
gm

I i s(Cgs  Cgd )

Unity-gain frequency
gm
fT 
2 (Cgs  Cgd )
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The depletion-type MOSFET
Physical



structure
The structure of depletion-type MOSFET is
similar to that of enhancement-type MOSFET with
one important difference: the depletion-type
MOSFET has a physically implanted channel
There is no need to
induce a channel
The depletion MOSFET
can be operated at both
enhancement mode and
depletion mode
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Circuit symbol for the n-channel depletion-MOS
Simplified circuit symbol applicable
for the case the substrate (B) is
connected to the source (S).
Circuit symbol for the nchannel depletion-type
MOSFET
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Characteristic curves
Expression of characteristic equation
W
iD  k n ' （vGS  Vt ) 2
L
1
2
Drain current with vGS  0
I DSS
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the iD–vGS characteristic
in saturation
W 2
 k n ' Vt
L
1
2
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The iD–vGS characteristic in saturation
Sketches of the iD–vGS characteristics for MOSFETs of enhancement and
depletion types
The characteristic curves intersect the vGS axis at Vt.
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The output characteristic curves
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88
The junction FET
D
Depletion
layer
P+
N-channel
G
G
n-type
Semiconductor
S
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D
P+
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S
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Physical operation under vDS=0
D
P+
P+
G
P+
P+
G
UGS = 0
P+
P+
G
S
S
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D
D
S
UGS < 0
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UGS = UGS(off)
90
The effect of UDS on ID for UGS(off) <UGS < 0
动画
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Summary of semiconductor devices
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92

Diode, BJT and FET are nonlinear devices
made of semiconductor, mostly silicon
 Diode
A diode allows current to flow in forward direction
and hence can perform functions such as
rectification, demodulation/detection, switch etc.
 The reverse current may become dramatically
large at breakdown, such phenomena can be used
as voltage regulator

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
Bipolar Junction Transistor





A BJT has three terminals: base, emitter and collector
The collector current is controlled by voltage/ current on
the base-emitter junction and is almost independent on
collector voltage.
It can perform functions such as amplification and switch,
etc.
A BJT should be properly biased for normal operation
There are three basic configurations, each has different
performance (input/output resistance, gain, high frequency
response, etc)
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
Field Effect Transistor
A FET has three terminals: gate, source and drain
 The drain current is controlled by gate voltage and
is almost independent on drain voltage.
 It can perform functions such as amplification,
logic calculation and switch, etc.
 A FET should be properly biased for normal
operation
 There are three basic configurations, each has
different performance (input/output resistance,
gain, high frequency response, etc)

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
As the microelectronics develops, more and
more functions are fulfilled by IC chips
 The discrete devices and circuits, however, are
still very important not only for practical
applications, but also for better understanding
and design of LSICs
 Quantitative calculation is sometimes
complicated but not difficult
 As long as you know the parameter definitions
clearly, results can be derived KCL, KVL, etc
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Homework
 April
6, 2010:
 5.25；5.40；5.47；5.63;
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