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Standard Products Business Promotion Consumer and Industrial Business Unit Renesas Electronics America Inc. Power Management Devices and Standard Product Group Product Promotion Goals Expand N. American standard product promotion beyond lvMOSFETs to be be able to better leverage existing customer and channel relationships by selling more products into existing accounts (i.e. MCU accounts) – This is a top down directive from Akao-san and has the code name SPAT in Japan. – But, our standard products still tend to be fairly limited in their target applications. – For example, our 30V MOSFETs primarily match CPU/GPU application requirements, many of our MCU customers have no need for the lv MOSFETs, so other products need to be added to our promotional efforts to leverage our customer base. – So, expanding the breadth of our promotion is essential. Product Promotion Status What products are available for general promotion? (Parts are price competitive, AE, Marketing, Sample support all available) 20V to 30V MOSFETs Mid-Voltage MOSFETs (40V to 80V is competitive, 80V+ non-competitive) Triacs/Thyristors IGBT’s (Price competitiveness under evaluation) What products are available for limited promotion status? Zener & Schottky Barrier Diodes for Mobile Apps Sawn Zener Diodes for LED lpSRAM & EEPROM in ‘less’ price competitive situations Small Power MOSFETs What products have ‘restricted’ promotion status? Li+ Smart Battery IC restricted to just major NBPC OEM. (due to N. American support limitations) PFC to just one test N. American Customer (due to N. American support limitations) Other MSIG Devices (due to N. American support limitations) High Power MOSFETs (due to non-competitive pricing) Other Vregs (due to non-competitive pricing) Discrete, Power, & Standard Product Support Matrix CUSTOMER PRODUCT MARKETING TACTICAL MARKETING APPLICATION ENGINEERING BUSINESS DEV LV Power Product Apple, Intel, West Coast Mark Defreitas Mark Defreitas Jim Comstock Tetsuo Sato LV Power Product AMD, East Coast Mark Defreitas Mark Defreitas Chris Lee Tetsuo Sato LV Power Product Dell Mark Defreitas Jessica Yamada Ex- NEC LV Power Product All Yoko Watanabe Yoko Watanabe A O'Scier Chris Lee A O'Scier (Texas)/Jim Comstock (CA)/Chris Lee (Everywhere Else) Tetsuo Sato lpSRAM & EEPROM All Jessica Yamada Jessica Yamada Tokyo Tad Keeley Triacs, IGBTs, Hi Pwr FETs All Mark Defreitas/Tad Keely Mark Defreitas Tetsuo Sato (Acting) Tetsuo Sato Other Gen Purpose & MSIG All Mark Defreitas Mark Defreitas Tokyo' Tetsuo Sato Motor Driver HGST None None Chris Lee (Acting) Tetsuo Sato RESPONSIBILITIES PRODUCT MARKETING: TACTICAL MARKETING: APPLICATION ENGINEERING: BUSINESS DEV: Market research, channel strategies, sales training, product lifecylce management, promotions, (new product definition) Quotes, Sales support for opportunity management, SMG support for delivery issues. Application Engineering Product Definition and development support, chipset partner support, Discrete, Power, & Standard Product Support Matrix IMPORTANT NOTE: For high voltage devices, like Triacs and IGBT’s, and for certain MSIG devices (i.e. PFC) we don’t have local AE expertise, instead we rely on good communication with Japan based AE’s. For the devices defined as promotion, or limited promotion, we’ve established that we can get fast and reliable support from Japan. Discrete, Power, & Standard Product Offline & Online AE and Sales Resources am.renesas.com: 1) eCommerce Tree is enabled for low voltage MOSFETs 2) 3) 4) 5) • This includes purchasing (through Digikey) and Sampling function • We will activate for at least IGBT and Triac as well. Virtual Power Lab • Buck converter design tool including auto FET selection, Spice Models, Dynamic Data sheets. Customer Presentations are available online for each product family. Parametric search Cross reference tool RSSI 1) Sales Training Presentations for each product category ( I will show one example for diodes) www.renesas.com: (global site) 1) Many application examples showing standard product usage with MCU’s. Example: Inverter Discrete, Power, & Standard Product Offline & Online AE and Sales Resources OFFLINE: 1) Santa Clara Sample Warehouse for lvMOSFET (Contact: [email protected]) 2) JIMSIM Advanced Buck Converter Simulation Tool (Contact: [email protected]) • Jim can rapidly and accurately compare FETs from various competitors under a wide range of operating conditions 3) Version 1 EZ-Like pdf for promotion products • 1K pricing still under analysis to make if full EZ. OTHER: Tak Taoyama’s ([email protected]) has been managing the N. American Sales Promotions for Triacs, Thyristors, and IGBT’s An Apps Engineer from Renesas High Power team in Takasaki Japan will visit us in late July or August for a promotional caravan, if you have potential Triac or IGBT opportunities please contact Tak to get on the caravan schedule. How have we won power device business? 1) Provide parts with better price:performance than incumbent or competitor. • • • • This typically requires gathering application data from customer. Key then is to have, and to identify, the best part. • This often requires complex analysis, but • We’ve found we can often conduct this step through coordination with Japan based AE’s. • Example– See xBox. And, engineers often aren’t especially loyal to their past power device supplier. Their ready to change suppliers for better price:performance. So, providing customers with better price:performance parts is the value proposition they care about. 2) Or, one exception, we win when incumbent suppliers have shortages. Study about Microsoft X-box Renesas Electronics America Inc. XBOX360 ELITE M/B □NTD4813NH ○NTD4806NH GPU CPU DDR Memory IRF8915 XBOX360 ELITE Parts list (DC/DC MOSFET) Memory 5V CPU GPU Hi Side Lo Side NTD4813NH-D NTD4813NH-D 1 NTD4813NH-D 1 NTD4813NH-D Phase fsw (kHz) Vout (V) 1 NTD4813NH-D NTD4813NH-D NTD4806N-D 1 NTD4806N-D 1 1 1 1 2 2 2 2 580 580 1.9 5 265 1 275 1.2 memo Vdrive H=6.0V L=12.0V Characteristics of current MOSFET part# Portion VDSS (V) VGSS (V) RDS(on) mohm VGS=4.5V VGS=10V Rg (Ω) Ciss (pF) Coss (pF) Crss (pF) NTD4813NH Hi-side 30 20 20.9 10.9 0.55 796 228 119 NTD4806N Lo-side 30 20 7.9 4.9 1 1,901 518 245 Portion VDSS (V) VGSS (V) Hi, Lo-side 25 20 Renesas proposal part# 2SK4212 RDS(on) mohm VGS=4.5V VGS=10V 8.5 5.5 Rg (Ω) 3.6 Ciss (pF) 1,131 Coss (pF) 244 Crss (pF) 153 Evaluation data using actual XBOX360 Comparison PKG Surface Temp. Ph-2-H Ph-1-H Test Conditions: Ph-2-L1 Ph-1-L1 Ph-1-L2 ・Game Demo ・Wait Time = 15min Ph-2-L2 Ph-1-H Ph-1-L1 Ph-1-L2 Ph-2-H Ph-2-L1 Ph-2-L2 Current Hi:NTD4813NH x1 Lo:NTD4806N x2 53.1 52.2 52.4 65.4 65.2 65.2 Renesas Proposal Hi:2SK4212 x1 Lo:2SK4212 x2 53.2 53.3 53.3 64.5 65.2 65.3 Almost same temperature! unit degC Comparison spike Voltage Current. Hi:NTD4813NH x1 Lo:NTD4806N x2 Renesas Proposal Hi:2SK4212 x1 Lo:2SK4212 x2 Vpeak=20.4V Vpeak=18.0V Vin Lower than current devices. Hi side MOSFET V spike. coil Vout IC R load Lo sideMOSFET Low Noise! Comparison Efficiency (Sim.) DPAK_JET+ DPAK_BEAM ( Estimation data, Under planning) 2SK4212+2SK4212 92 91 condition 1H/2L 1phase Vin=12V Vout=1.2V Vdr : H=6V L=12V Fpwm=275kHz L=560nH 90 NTD4813NH+NTD4806N 89 efficiency(%) 88 87 86 85 BEST Efficiency! 84 83 82 81 80 0 part# 5 Portion 10 VDSS (V) 15 Iout(A) 20 RDS(on) mohm VGS=4.5V VGS=10V 25 Rg (Ω) 30 Ciss (pF) Coss (pF) Crss (pF) NTD4813NH Hi-side 30 20.9 10.9 0.55 796 228 119 NTD4806N Lo-side 30 7.9 4.9 1 1,901 518 245 2SK4212 Hi, Lo-side 25 8.5 5.5 3.6 1,131 244 153 DPAK_JET* Hi-side 30 9.6 7 0.8 1,219 250 77 DPAK_BEAM* Lo-side 30 6.7 5.5 1.4 2,291 329 177 *Under planning (Estimation data) Small Capacitance! Thermal Analysis Data Analysis Condition Modeling of GPU Block for Thermal Simulation PowerMOS Package:DPAK PCB GPU Block Capacitor Modeling Inductor Airflow Distribution Capacitor 2.0 m/s Position where Airflow is displayed Triac and Thyristor Triac and Thyristor: Definition What is a Triac? A bi-directional electronic switch which can conduct current in either direction when triggered; no polarity Used in AC circuits because it allows for large power flows with milliampere scale control currents Triac and Thyristor: Applications Triacs Thyristors AC Control Heater Lamp Solenoid Valve Motor Control rectifier Control capacitor (LC resonance) Others Electric Fan Bike Regulator) Fan heater(Ignitor) Washing machine SMPS (Inrush current Protection) Rice cooker Boat Jet ski(Ignitor) Vacuum Cleaner Inverter Lamp (Inrush current Protection) Printer, Copier FAX 電動工具 Electric tool Leakage detector Toilet seat Lamp Dimmer Automatic Dish washer SSR Camera (strobe) Triac: Product Overview VDRM (V) TO-3PFM TO-3P TO-220FN 600, 1500V 600V 400, 600, 700, 800, 1000V TO-220FL 600, 700V TO-220F 600, 700, 800, 1000V 600, 700V TO-220 600V 600V 600V TO-220S MP-3A 600, 700V TO-92 600, 700, 800V SOT-223 UPAK 700V 600V 0.8 1 2 3 5 6 8 10 12 16 20 25 30 IT(RMS) (A) Thyristor: Product Overview VDRM (V) TO-3PFM 600V TO-220FN 600V TO-220F 600V TO-220 DPAK(L)-(3) 600V 600V MP-3A 600V TO-92 UPAK 400, 600V MPAK 400V 0.1 0.3 0.5 0.8 1 3 5 6 8 10 12 16 25 IT(AV) (A) Triac and Thyristor: Roadmap General Planar Al Ribbon 600V~700V (Tj=150℃) High Commutation Planar 4~16A 800V (Tj=150℃) General General General Planar LB series 600V (Tj=150℃) Planar LG series 600V~800V (Tj=150℃) Planar High Power 400V~1500V ~30A (Tj=125/150℃) Planar 600V~700V ~20A (Tj=150℃) Low Inush General Planar LA series 600~1000V (Tj=125℃) For low inrush current Planar LD series 600V~700V (Tj=150℃) New type General Planar technology General (Tj=150℃) Planar technology General Glass Passivation (Tj=125℃) ‘00 General & Low Inrush Triac (Tj=125℃) ‘02 ‘04 Thyristor ‘06 ‘08 ‘10 Triac and Thyristor: Packaging TO-220F(2) Insulation Non Insulation TO-220FL MPAK SMD UPAK SMD MP-3A SMD TO-3PFM TO-220F TO-220FN DPAK(L)-(3) Other TO-92 ex. TO-220F(A8 type) 15.5±0.3 Various Lead Forming TO-220S See Renesas Discrete General Catalog SMD TO-220 SOT-223 TO-3P 4.5±0.5 Triac and Thyristor: Features Planar Technology Guaranteed Max. Tj 150C High reliability Wide Lineup ★ Optimized for various applications Tj 125℃, 150℃ Triac & Thyristor High voltage, high current Repetitive inrush current Lower power loss Low inrush current Various package and Lead Forming ★ Optimized for your design Insulation, Non-insulation Surface Mount, Lead type Various Lead Forming Triac and Thyristor: Application details necessary for part selection Application and Electrical Spec questions 1. What kind of load is the Triac or Thyristor driving? Motor, heater, or solenoid? 2. What is the voltage of the AC line? 3. What is the Operating Current? 4. What is the inrush current? (if inductive load, as with a motor) 5. What is the competitive parts and price (from customer)? Package Questions 1. Surface Mount or Lead Type? 2. If Lead Type, is requirement for an Insulated or non-Insulated package? MOSFET MOSFET: Combined Market Share 20V-100V 2008 Billing $17.3B (Gartner) 2008 Billing $12.1B (Marketing Eye) 2008 Billing $3.7B (Marketing Eye) MOSFET: Ranking and Market Share Summary 20V-100V 2009 Share 2009 Rankings Low Voltage MOSFETs 1 Renesas Electronics Others 7.8% ST 2.4% On Semi 3.7% 2 Vishay 3 Fairchild Sanyo 4.8% 4 IR 5 Alpha & Omega 6.1% Toshiba 6 Rohm 7 Alpha & Omega 8 Sanyo 9 Infineon Technologies 10 Infineon 4.4% Renesas 17.1% Vishay 13.4% Rohm 6.2% Toshiba 8.6% Fairchild 13% IR 12.4% On Semi Source: Market Eye, March 2009 MOSFET: Capacity and Shipments VSOF 6Mu Other 2Mu LFPAK 11Mu TO-220 13Mu D-PAK TO-220 13Mu 62Mu TO-251 14Mu HWSON WPAK SOP8 15Mu 30Mu 20Mu Renesas Electronics: Total Low voltage MOSFET package monthly capacity 173Mu/M 1.0 billion Renesas Electronics Power Management and General purpose devices shipped each month Components (1000M) 0 500 1,000 MOSFET: Target Applications ■ VR* for CPU Core, GPU, Chipset and Memory. Server , Network, Telecom Note Book PC VGA Win High Efficiency for Note PC Power Supply New Generation Power MOSFET RJK0305DPB ■ Low RDS(on)=10mΩ ■ High Speed Switching(tf=3.0ns) ■ Low Gate Charge(Qg=8nC) ■ Primary / Secondary use for Brick Converter and SR / Oring Switch for AC/DC Power Supply. Server , Router Telecom ■ Power Management Switch for Li+Ion Battery (N/B PC). *SR : Synchronous Rectification * VR : Voltage Regulator MOSFET: Discrete and Integrated Products Roadmap MOSFET: Low Voltage Products Roadmap MOSFET Roadmap for PC Li+ Battery Battery capacity increasing in smaller packages High-End BVDSS / RDS(on) typ @ 10V UMOS4 1.x mΩclass UMOS5 UPA2744UT1A 30V / 1.6mΩ UPA27xxT1A 30V / 1.2mΩ UPA2743T1A 30V / 2.1mΩ 2.x mΩclass RJK0356DPA 30V / 2.2mΩ UPA2722UT1A 30V / 2.4mΩ Low-End Mid-Range RJK0358DPA 30V / 3.4mΩ 3.xmΩclass UPA2721AGR Small PKG 30V / 3.6mΩ UPA27XX SOP UPA27XX HVSON UPA28XX mini-HVSON 5×6×1.8 5×6×1.0 3.3×3.3×0.95 UPA28XX 30V / 3.0mΩ UPA2807 30V / 3.8mΩ RJK0358DSP 30V / 3.2mΩ 5.xmΩclass VDSS=35V 5.xmΩclass UPA2720AGR 30V / 5.5mΩ Small PKG RJK0362DSP 30V / 5.0mΩ UPA2742GR 35V / 4.0mΩ 2008 33 UMOS6 JET/BEAM 2009 © 2010 Renesas Electronics Corporation. All rights reserved. UPA2804 30V / 5.6mΩ RJK03E0DNS 30V / 4.3mΩ RJK03E1DNS 30V / 5.3mΩ 2010 RJK03XX SOP RJK03XX WPAK RJK03XX WSON3030 5×6×1.7 5×6×0.8 3.3×3.3×0.8 MOSFET Roadmap for Mobile Li+ Battery 2006 UMOS4 Process 6pHWSON 2.0 x 5.0 mm 2007 2008 UMOS5 UMOS6 UPA2451B 30V/~20mΩ UPA2451C 30V/~20mΩ UPA2454 30V/~11mΩ UPA2450B 20V/~17.5mΩ UPA2450C 20V/~17.5mΩ UPA2455 20V/~13mΩ 8pHUSON NEW Smaller package 2.0 x 2.7 mm 4-pin EFIP (BGA type) ~1.62 x 1.62 mm UPA2351 30V/~40mΩ* UPA2351B 30V/~40mΩ* UPA2352 24V/~43mΩ* UPA2352B 24V/~43mΩ* UPA2350 20V/~35mΩ* UPA2350B 30V/~35mΩ* NEW 4-pin EFLIP (LGA type) Thinner/smaller CSP Parts Name: VDS / RDS(on) max VGS = 4.5V * Rss(on) :2 chip on-state resistance 34 2009 ~1.62 x 1.62 mm © 2010 Renesas Electronics Corporation. All rights reserved. UPA2460 30V/~20mΩ UPA2461 20V/~17.5mΩ 対象品種 (計6品種) Under Plan UPA2351C 30V/~40mΩ* UPA2351 30V/~40mΩ* UPA2351B 30V/~40mΩ* UPA2352C 24V /~43mΩ* UPA2352 24V/~43mΩ* UPA2352B 24V/~43mΩ* UPA2350C 24V/~35mΩ* UPA2350 20V/~35mΩ* UPA2350B 20V/~35mΩ* UPA235xC 24V/~25mΩ* MOSFET: High Efficiency “JET” Series (Compare with previous) 30% Cut RDS(on) Ultra Low RDS(on) Reduced the Thermal Temperature High Saving 27% Cut Qg Low Qg LFPAK WPAK SOP-8 1.6mΩtyp 1.5mΩtyp 2.6mΩtyp Low On State Power Loss Low Driver Power Loss Capable High Current High Performance Efficiency Low Switching Power Loss Achieve High Freq. & High Slew Rate Energy 30% Cut Qgd Low Qgd MOSFET: Questions for the Customer – “JET” Series • Our “Sweet Spot” for LV is 30V • Many opportunities can be covered with “JET” series • High D-in success rate in US Market • Use the Q&A from the RSSI Site “Rep Sales Guide” • With our vast lineup of LV and MV MOSFETs, IGBTs, and Triacs, we have a “fit” for just about any application. • For assistance, please contact the appropriate team member at HQ. MOSFET: Figure of Merit Improvements ● Figure of Merit : FOM(Ron・Qg) at Vgs=4.5V Total Gate Charge Qg (nC) Low Charge Loss 100 Speed Series 97mΩnC RENESAS JET ‘07 RENESAS Speed ‘05 RENESAS 8th Gen. 50 20% Down JET Series 78mΩnC 20 10 1 2 5 RDS(on)(VGS=4.5V) typ (mΩ ) Low Conduction Loss 10 MOSFET: New “BEAM” Series Target Application < Test Conditions > Vin=12V, Vout=1.2V, VDR=5V,fsw=350kHz, L=0.45uH, No Air flow Server(CPU,Memory) DT/NB-PC(CPU,Memory) Graphic Card(GPU) High Efficiency Low thermal concern Long battery life 92 91 90 Efficiency (%) Features 93 BEAM 89 88 1H/1L 87 Hi : RJK0305DPB (common) 86 Lo : RJK03C0DPA (BEAM) Lo : RJK0346DPA (JET) 85 84 1% Up JET 83 0 5 10 15 Iout (A) 20 25 Low noise Reducing EMI noise BEAM+SBD Space saving BEAM small PKG (3mmx3mm) 30 MOSFET: Rds(on) Trend 8th Gen. RDS(on)typ [mΩ] Vgs=4.5V 3.5 HAT2165H 3.4mΩ Low Crss/Ciss 3.0 (0.073) 2.5 Speed Nch 30V Low Side MOSFET RJK0301DPB 3.0mΩ Low Crss/Ciss (0.044) 10th JET 2.0 RJK0346DPA 1.9mΩ Low Qg/Qgd 1.5 11th BEAM RJK03C0DPA Next Gen. 1.7mΩ Under Study 1.0 0.5 2002 2004 2006 2008 Year 2010 2012 2014 DrMOS DrMOS and POL-SiP: Products, Packaging, Applications <Products> POL-SiP: stControl IC & MOSFETs 2nd Gen. PKG 1 Gen. PKG (Wire Bonding) R2J20701 mass production Under developing Under studying For VR12/IMVP7 8x8mm (Clip Bonding) Higher PKG R2J20702 Performance R2J2070x R2J20751 POL all in one Device 6x6mm PKG R2J2060x DrMOS: Driver IC & MOSFETs 1st Gen. PKG (Wire Bonding) 2nd R2J20604 R2J20602 in 2004 Higher Performanc e Light & Heavy Load Efficiency up Wide Input Range (Clip Bonding) R2J20601 The World’s first DrMOS R2J20605A 8x8mm PKG Gen. PKG 6x6mm PKGPWM=5V Smaller Package Intel Rev3.0/ High Voltage R2J20653A R2J2065x R2J20651A R2J20651 R2J20652A Intel Rev3.0 U P Light &Heavy Load Efficiency up VCIN=12V <Technology> Package Wire bonding, PB free MOSFET D8 (20V) IC IP65 (16V) Clip bonding, Terminal Pb free, Halogen free BEAM (30V) JET (30V) IP75 (27V) <Target Application> Notebook PCs V-core & non Vcore DDR, etc…) Server & Desktop PCs non V-core (VTT, Server & Desktop PCs V-core 2004 2005 2006 2007 2008 2009 2010 DrMOS: R2J20605ANP 8x8 Package New QFN56 Target Application Features Telecom/Server Storage/Graphic Card Multi-Phase DC-DC converter Gate Driver Top MOSFET Bottom MOSFET Driver IC + Top MOS + Bottom MOS 50% smaller than discrete solution Huge output current up to 40A (same as R2J20602NP) Pin Compatible (DrMOS spec.) Functions Multi-Phase Driver PWM Controller (Multi-phase) Driver with SBD 3-Chip in One Package Built-in SBD for boot-strapping Remote ON/OFF QFN 56pin 8 x 8 x 0.8mm Capable of 5V PWM Signal DrMOS: R2J20651NP/ANP 6x6 Package 6x6mm QFN-40pin = More Space Saving DrMOS 6x6 Area = 36 mm2 R2J20602NP 8x8 Area = 64 mm2 Space-saving - 44% QFN-40pin 6x6mm QFN-56pin 8x8mm 6mm x 6mm Vin Max Iout Max Driver supply R2J20651NP 5V 16V R2J20651ANP New R2J20652ANP New R2J20653ANP 35A 27V PWM Input 5V & 3.3V Thermal Warning Thermal Shutdown Note Sample MP 130C 130C 5V,12V and 20V 5V 5V Status 115C 150C Intel Rev3.0 VCIN=12V version Intel Rev3.0 IGBT (Insulated Gate Bipolar Transistor) IGBT: Definition What is an IGBT? Insulated Gate Bipolar Transistor Isolated FET and a Bipolar Power Transistor in a single device Noted for high efficiency and fast switching Apps include inverters for various apps, large appliances, electric cars, AC systems, PDP Interest building for US-based designs – Induction Heating(IH) Cooktops – Motor Control for Major Home Appliances – Large Industrial Power Supplies IGBT: Applications and Product Strengths High efficiency ・High current Low Vce(sat) Low VF ・High speed switching High reliability High capability (Short circuit time) Miniaturization ・Built-in FRD ・Small PKG (TO-220Full Mold LDPAK,MP-3A) Renesas develops the best product by the application ! IGBT: Development Roadmap High performance & High efficiency Trench technology Thin wafer Optimum design of cell structure. 30V Next-Gen Reverse conducting 11th Gen. 600V/1200V G6H-RC G5H Trench technology 1,100-1,200V G6H VGE=30V VGE=30V 600V G4S High Short Circuit Capability Type : RJH60DXX Series Trench technology High speed G5 600V Planar construction Optimum Design for Specific Applications High Speed &Low Vce (sat) Type : RJH60FXX Series G4 600V/1200V 2005 2006 2007 2008 2009 2010 2011 2012 IGBT: New G6H Series vs G5 Series 600V 100 90 Tc = 25 ℃ VGE = 15 V 80 Collector current IC [A] 70 GN6060V5DP (60A/600V) (G5 series) Improvement 30% 60 50 RJH60F5DPK (80A/600V) (G6H series) 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 IGBT: Renesas vs The Competition Company D Company C Company B Company A G6H series 600V IGBT: Features and Applications by Product Type G6H Ultra Low VCE(sat) Series 600V IGBT Features – Ultra Low Collector to Emitter Saturation Voltage – Built-in Fast Recovery Diode (FRD) in Single Package – High-Speed Switching Applications – Induction Heating (IH) Cooktop – Current Resonance, Half Bridge – Soft Switching Applications New Products P/N IC VCE VCE(sat) tf PKG ( Resistance Load) Tc=25℃ Tc=100℃ Typ. IC VGE Typ. IC VCE FRD Status WS MP RJH60F7ADPK 600V 90A 50A 1.35V 50A 15V 95ns 30A 300V YES TO-3P OK OK RJH60F6DPK 600V 85A 45A 1.35V 45A 15V 95ns 30A 300V YES TO-3P OK 3Q/’10 RJH60F5DPK 600V 80A 40A 1.37V 40A 15V 80ns 30A 300V YES TO-3P OK OK RJH60F4DPK 600V 60A 30A 1.40V 30A 15V 80ns 30A 300V YES TO-3P OK OK RJH60F0DPK 600V 50A 25A 1.40V 25A 15V 90ns 30A 300V YES TO-3P OK OK IGBT: Features and Applications by Product Type <<Will move to Appendix>> G6H Reverse-Conducting 1,000-1200V IGBT Features – Single-chip IGBT with Integrated Diode – Low Collector to Emitter Saturation Voltage – High-Speed Switching Applications – Single Transistor Type Voltage Resonance Circuit – Induction Heating (IH) Cooktop – Soft Switching Applications New Products (Target Spec) P/N VCE IC IC VCE(sat) Body VF PKG (Tc=25℃) (Tc=100℃) Typ. IC VGE Diode Typ. IF Status WS MP RJH1BF7RDPK 1100V (60A) (30A) (2.00V) 60A 15V YES TBD 10A TO-3P 2Q/’10 4Q/’10 RJH1CF7RDPK 1200V (70A) (35A) (1.65V) 35A 15V YES 2.1 10A TO-3P 2Q/’10 4Q/’10 RJH1CF6RDPK 1200V (60A) (30A) (1.65V) 30A 15V YES 2.1 10A TO-3P 2Q/’10 4Q/’10 RJH1CF5RDPK 1200V (50A) (25A) (1.70V) 25A 15V YES TBD 10A TO-3P 2Q/’10 4Q/’10 RJH1CF4RDPK 1200V (40A) (20A) (1.70V) 20A 15V YES 2.5 10A TO-3P 2Q/’10 4Q/’10 IGBT: Questions for the Customer Applications Induction Heating, i.e Cooktop – What type of circuit? Current resonant or voltage resonant? – What is the load capacity (kW)? – What is the operating current? – What is the switching frequency? – What package is required? – What is the competitive parts and price (from customer)? Others – What is the AC input voltage? – What is the load capacity (kW)? – What is the operating current? – What is the switching frequency? – Is a Fast Recovery Diode (FRD) required? – Is short circuit capability required? – What package is required? Diode Diode: W/W Market Share and Product Breakdown Diode: Shipments by Application Application automotive 18% consumer 17% OA 4% industry 25% mobile 36% VC. BSW PIN TV tuner FEM, ASM Diode: Product Lineup by Device Type General Purpose Zener (ZN) Schottky (SB) High Frequency Small signal rectification Switching (SW) Small signal Constant voltage ESD protection PW ESD protection Small signal (under Io=0.5A) Detector Current Stopper PW (over Io=0.5A) Rectifier Current Stopper Varicap (VC) TV tuner, AFC, VCO Band SW (BSW) RF SW Diode PIN (PIN) ANT-SW Diode: Products and Applications Zener Zener Diodes for Surge Absorption High ESD Level (25-30kV) Type – Protection at interface section of an electronic device – For use at DC in location of Mobile Phones and other Portables High Speed Signal (~10kV), Low Capacitance Type – Host PC and Peripherals, ex. USB 2.0 ESD Tolerance (kV) Lineup 30 HZM27FA HZM6.8MFARKZ6.2KL RKZ6.8TKK HZM6.8ZMFA (bi-directional) RKZ6.8ZMFAKT 20 High ESD level Series Low capacitance Series HZM6.2ZMWA/FA 10 HZL6.8Z4 HZD6.2Z4 HZM6.8Z4MWA RKZ6.2Z4MFAKT HZM6.8Z4MFA 1 HZM5.6ZFA 10 Capacitance (pF) 100 Diode: Market Needs, Future Activity Zener Market Needs Compliance with Directives on EMC (Electromagnetic Compatibility) Small Distortion on Wave-Form in High-Speed Signal Lines (USB, etc) Small and Thin Package for High-Density Surface-Mount Environmentally-Friendly Products Future Activity High ESD (Electrostatic Discharge) Level Based on IEC61000-4-2 Low Capacitance Compound and Small Products (four devices/package, two devices/package) VSON-5 (four devices) Support for Lead-Free and Halogen-Free Products Diode: Application Examples and Packaging Schottky Schottky Diodes for Circuit Protection High-Intensity LED LED and LCD Drivers CAN and LIN Bus (Bi-Directional Type) Automotive Battery for Mobile Equipment Small/Ultra-Small Packaging Bare Die also available for integration into products like LED Modules Diode: Market Needs and Future Activity Schottky Market Needs High Efficiency/Low Loss Small Distortion for High-Frequency Signals Wide Variation of Forward Current Small and light-weight products Environmentally-Friendly Products Future Activity Low Forward-Voltage Drop Low Leakage Current Low Capacitance Wide Lineups of Products Small and Compound Products Support for Lead-Free and Halogen-Free Products Thank You