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Standard Products Business Promotion
Consumer and Industrial Business Unit
Renesas Electronics America Inc.
Power Management Devices and Standard Product Group
Product Promotion Goals
 Expand N. American standard product promotion beyond lvMOSFETs to be be able to better leverage existing customer
and channel relationships by selling more products into existing
accounts (i.e. MCU accounts)
– This is a top down directive from Akao-san and has the
code name SPAT in Japan.
– But, our standard products still tend to be fairly limited in
their target applications.
– For example, our 30V MOSFETs primarily match
CPU/GPU application requirements, many of our MCU
customers have no need for the lv MOSFETs, so other
products need to be added to our promotional efforts to
leverage our customer base.
– So, expanding the breadth of our promotion is essential.
Product Promotion Status
What products are available for general promotion?
(Parts are price competitive, AE, Marketing, Sample support all available)




20V to 30V MOSFETs
Mid-Voltage MOSFETs (40V to 80V is competitive, 80V+ non-competitive)
Triacs/Thyristors
IGBT’s (Price competitiveness under evaluation)
What products are available for limited promotion status?
 Zener & Schottky Barrier Diodes for Mobile Apps
 Sawn Zener Diodes for LED
 lpSRAM & EEPROM in ‘less’ price competitive situations
 Small Power MOSFETs
What products have ‘restricted’ promotion status?
 Li+ Smart Battery IC restricted to just major NBPC OEM. (due to N.
American support limitations)
 PFC to just one test N. American Customer (due to N. American support
limitations)
 Other MSIG Devices (due to N. American support limitations)
 High Power MOSFETs (due to non-competitive pricing)
 Other Vregs (due to non-competitive pricing)
Discrete, Power, & Standard Product Support Matrix
CUSTOMER
PRODUCT
MARKETING
TACTICAL
MARKETING
APPLICATION
ENGINEERING
BUSINESS DEV
LV Power Product
Apple, Intel, West Coast
Mark Defreitas
Mark Defreitas
Jim Comstock
Tetsuo Sato
LV Power Product
AMD, East Coast
Mark Defreitas
Mark Defreitas
Chris Lee
Tetsuo Sato
LV Power Product
Dell
Mark Defreitas
Jessica Yamada
Ex- NEC LV Power Product
All
Yoko Watanabe
Yoko Watanabe
A O'Scier
Chris Lee
A O'Scier (Texas)/Jim
Comstock (CA)/Chris
Lee (Everywhere Else) Tetsuo Sato
lpSRAM & EEPROM
All
Jessica Yamada
Jessica Yamada
Tokyo
Tad Keeley
Triacs, IGBTs, Hi Pwr FETs
All
Mark Defreitas/Tad
Keely
Mark Defreitas
Tetsuo Sato (Acting)
Tetsuo Sato
Other Gen Purpose & MSIG
All
Mark Defreitas
Mark Defreitas
Tokyo'
Tetsuo Sato
Motor Driver
HGST
None
None
Chris Lee (Acting)
Tetsuo Sato
RESPONSIBILITIES
PRODUCT MARKETING:
TACTICAL MARKETING:
APPLICATION ENGINEERING:
BUSINESS DEV:
Market research, channel strategies, sales training, product lifecylce management, promotions, (new product definition)
Quotes, Sales support for opportunity management, SMG support for delivery issues.
Application Engineering
Product Definition and development support, chipset partner support,
Discrete, Power, & Standard Product Support Matrix
IMPORTANT NOTE: For high voltage devices, like Triacs and IGBT’s, and for
certain MSIG devices (i.e. PFC) we don’t have local AE expertise, instead we
rely on good communication with Japan based AE’s. For the devices defined
as promotion, or limited promotion, we’ve established that we can get fast and
reliable support from Japan.
Discrete, Power, & Standard Product Offline & Online AE
and Sales Resources
am.renesas.com:
1) eCommerce Tree is enabled for low voltage MOSFETs
2)
3)
4)
5)
•
This includes purchasing (through Digikey) and Sampling function
•
We will activate for at least IGBT and Triac as well.
Virtual Power Lab
•
Buck converter design tool including auto FET selection, Spice Models, Dynamic Data sheets.
Customer Presentations are available online for each product family.
Parametric search
Cross reference tool
RSSI
1)
Sales Training Presentations for each product category ( I will show one example for diodes)
www.renesas.com: (global site)
1)
Many application examples showing standard product usage with MCU’s. Example: Inverter
Discrete, Power, & Standard Product Offline & Online AE
and Sales Resources
OFFLINE:
1) Santa Clara Sample Warehouse for lvMOSFET (Contact: [email protected])
2) JIMSIM Advanced Buck Converter Simulation Tool (Contact: [email protected])
•
Jim can rapidly and accurately compare FETs from various competitors under a wide range of operating conditions
3) Version 1 EZ-Like pdf for promotion products
•
1K pricing still under analysis to make if full EZ.
OTHER:
Tak Taoyama’s ([email protected]) has been managing the N. American Sales Promotions for
Triacs, Thyristors, and IGBT’s
An Apps Engineer from Renesas High Power team in Takasaki Japan will visit us in late July or August for a
promotional caravan, if you have potential Triac or IGBT opportunities please contact Tak to get on the
caravan schedule.
How have we won power device business?
1) Provide parts with better price:performance than incumbent or competitor.
•
•
•
•
This typically requires gathering application data from customer.
Key then is to have, and to identify, the best part.
•
This often requires complex analysis, but
•
We’ve found we can often conduct this step through coordination with Japan based AE’s.
•
Example– See xBox.
And, engineers often aren’t especially loyal to their past power device supplier. Their ready to
change suppliers for better price:performance.
So, providing customers with better price:performance parts is the value proposition they care
about.
2) Or, one exception, we win when incumbent suppliers have shortages.
Study about Microsoft X-box
Renesas Electronics America Inc.
XBOX360 ELITE M/B
□NTD4813NH
○NTD4806NH
GPU
CPU
DDR Memory
IRF8915
XBOX360 ELITE Parts list (DC/DC MOSFET)
Memory
5V
CPU
GPU
Hi Side
Lo Side
NTD4813NH-D
NTD4813NH-D
1 NTD4813NH-D
1 NTD4813NH-D
Phase fsw (kHz) Vout (V)
1
NTD4813NH-D
NTD4813NH-D
NTD4806N-D
1 NTD4806N-D
1
1
1
1
2
2
2
2
580
580
1.9
5
265
1
275
1.2
memo
Vdrive H=6.0V
L=12.0V
Characteristics of current MOSFET
part#
Portion
VDSS
(V)
VGSS
(V)
RDS(on) mohm
VGS=4.5V
VGS=10V
Rg
(Ω)
Ciss
(pF)
Coss
(pF)
Crss
(pF)
NTD4813NH
Hi-side
30
20
20.9
10.9
0.55
796
228
119
NTD4806N
Lo-side
30
20
7.9
4.9
1
1,901
518
245
Portion
VDSS
(V)
VGSS
(V)
Hi, Lo-side
25
20
Renesas proposal
part#
2SK4212
RDS(on) mohm
VGS=4.5V
VGS=10V
8.5
5.5
Rg
(Ω)
3.6
Ciss
(pF)
1,131
Coss
(pF)
244
Crss
(pF)
153
Evaluation data using actual XBOX360
Comparison PKG Surface Temp.
Ph-2-H
Ph-1-H
Test Conditions:
Ph-2-L1
Ph-1-L1
Ph-1-L2
･Game Demo
･Wait Time = 15min
Ph-2-L2
Ph-1-H
Ph-1-L1
Ph-1-L2
Ph-2-H
Ph-2-L1
Ph-2-L2
Current
Hi:NTD4813NH x1
Lo:NTD4806N x2
53.1
52.2
52.4
65.4
65.2
65.2
Renesas Proposal
Hi:2SK4212 x1
Lo:2SK4212 x2
53.2
53.3
53.3
64.5
65.2
65.3
Almost same
temperature!
unit degC
Comparison spike Voltage
Current.
Hi:NTD4813NH x1 Lo:NTD4806N x2
Renesas Proposal
Hi:2SK4212 x1 Lo:2SK4212 x2
Vpeak=20.4V
Vpeak=18.0V
Vin
Lower than current devices.
Hi side MOSFET
V spike.
coil
Vout
IC
R load
Lo sideMOSFET
Low Noise!
Comparison Efficiency (Sim.)
DPAK_JET+ DPAK_BEAM
( Estimation data, Under planning)
2SK4212+2SK4212
92
91
condition
1H/2L 1phase
Vin=12V
Vout=1.2V
Vdr : H=6V
L=12V
Fpwm=275kHz
L=560nH
90
NTD4813NH+NTD4806N
89
efficiency(%)
88
87
86
85
BEST
Efficiency!
84
83
82
81
80
0
part#
5
Portion
10
VDSS
(V)
15
Iout(A)
20
RDS(on) mohm
VGS=4.5V
VGS=10V
25
Rg
(Ω)
30
Ciss
(pF)
Coss
(pF)
Crss
(pF)
NTD4813NH
Hi-side
30
20.9
10.9
0.55
796
228
119
NTD4806N
Lo-side
30
7.9
4.9
1
1,901
518
245
2SK4212
Hi, Lo-side
25
8.5
5.5
3.6
1,131
244
153
DPAK_JET*
Hi-side
30
9.6
7
0.8
1,219
250
77
DPAK_BEAM*
Lo-side
30
6.7
5.5
1.4
2,291
329
177
*Under planning (Estimation data)
Small
Capacitance!
Thermal Analysis Data
Analysis Condition
Modeling of GPU Block for Thermal Simulation
PowerMOS
Package:DPAK
PCB
GPU Block
Capacitor
Modeling
Inductor
Airflow Distribution
Capacitor
2.0 m/s
Position where Airflow is displayed
Triac and Thyristor
Triac and Thyristor: Definition
 What is a Triac?
 A bi-directional electronic switch which can conduct current in
either direction when triggered; no polarity
 Used in AC circuits because it allows for large power flows with
milliampere scale control currents
Triac and Thyristor: Applications
Triacs
Thyristors
AC Control
Heater
Lamp
Solenoid
Valve
Motor
Control rectifier
Control capacitor
(LC resonance)
Others
Electric Fan
Bike Regulator）
Fan heater(Ignitor)
Washing
machine
SMPS
(Inrush current
Protection)
Rice cooker
Boat Jet ski（Ignitor）
Vacuum Cleaner
Inverter Lamp
(Inrush current
Protection)
Printer,
Copier
FAX
電動工具
Electric
tool
Leakage
detector
Toilet seat
Lamp
Dimmer
Automatic Dish
washer
SSR
Camera
(strobe)
Triac: Product Overview
VDRM (V)
TO-3PFM
TO-3P
TO-220FN
600, 1500V
600V
400, 600, 700, 800, 1000V
TO-220FL
600, 700V
TO-220F
600, 700, 800, 1000V
600, 700V
TO-220
600V
600V
600V
TO-220S
MP-3A
600, 700V
TO-92
600, 700, 800V
SOT-223
UPAK
700V
600V
0.8
1
2
3
5
6
8
10 12
16
20
25
30 IT(RMS)
(A)
Thyristor: Product Overview
VDRM (V)
TO-3PFM
600V
TO-220FN
600V
TO-220F
600V
TO-220
DPAK(L)-(3)
600V
600V
MP-3A
600V
TO-92
UPAK
400, 600V
MPAK
400V
0.1
0.3
0.5 0.8 1
3
5 6
8 10
12
16
25
IT(AV) (A)
Triac and Thyristor: Roadmap
General
Planar
Aｌ Ribbon
600V～700V
(Tj=150℃)
High
Commutation
Planar
4～16A
800V
(Tj=150℃)
General
General
General
Planar
LB series
600V
(Tj=150℃)
Planar
LG series
600V～800V
(Tj=150℃)
Planar
High Power
400V～1500V
～30A
(Tj=125/150℃)
Planar
600V～700V
～20A
(Tj=150℃)
Low Inush
General
Planar
LA series
600～1000V
(Tj=125℃)
For low inrush
current
Planar
LD series
600V～700V
(Tj=150℃)
New type
General
Planar
technology
General
(Tj=150℃)
Planar
technology
General
Glass
Passivation
(Tj=125℃)
‘00
General &
Low Inrush
Triac
(Tj=125℃)
‘02
‘04
Thyristor
‘06
‘08
‘10
Triac and Thyristor: Packaging
TO-220F(2)
Insulation
Non Insulation
TO-220FL
MPAK
SMD
UPAK
SMD
MP-3A
SMD
TO-3PFM
TO-220F
TO-220FN
DPAK(L)-(3)
Other
TO-92
ex. TO-220F(A8 type)
15.5±0.3
Various Lead Forming
TO-220S
See Renesas Discrete
General Catalog
SMD
TO-220
SOT-223
TO-3P
4.5±0.5
Triac and Thyristor: Features
 Planar Technology
 Guaranteed Max. Tj 150C
 High reliability
 Wide Lineup
★ Optimized for various applications





Tj 125℃, 150℃ Triac & Thyristor
High voltage, high current
Repetitive inrush current
Lower power loss
Low inrush current
 Various package and Lead Forming
★ Optimized for your design



Insulation, Non-insulation
Surface Mount, Lead type
Various Lead Forming
Triac and Thyristor: Application details necessary for
part selection
 Application and Electrical Spec questions
1. What kind of load is the Triac or Thyristor driving? Motor,
heater, or solenoid?
2. What is the voltage of the AC line?
3. What is the Operating Current?
4. What is the inrush current? (if inductive load, as with a motor)
5. What is the competitive parts and price (from customer)?
 Package Questions
1. Surface Mount or Lead Type?
2. If Lead Type, is requirement for an Insulated or non-Insulated
package?
MOSFET
MOSFET: Combined Market Share 20V-100V
2008 Billing
$17.3B
(Gartner)
2008 Billing
$12.1B
(Marketing Eye)
2008 Billing
$3.7B
(Marketing Eye)
MOSFET: Ranking and Market Share Summary 20V-100V
2009 Share
2009 Rankings
Low Voltage MOSFETs
1
Renesas Electronics
Others
7.8%
ST 2.4%
On Semi 3.7%
2
Vishay
3
Fairchild
Sanyo 4.8%
4
IR
5
Alpha & Omega
6.1%
Toshiba
6
Rohm
7
Alpha & Omega
8
Sanyo
9
Infineon Technologies
10
Infineon 4.4%
Renesas
17.1%
Vishay
13.4%
Rohm 6.2%
Toshiba
8.6%
Fairchild
13%
IR
12.4%
On Semi
Source: Market Eye, March 2009
MOSFET: Capacity and Shipments
VSOF 6Mu Other 2Mu
LFPAK 11Mu
TO-220 13Mu
D-PAK
TO-220 13Mu
62Mu
TO-251 14Mu
HWSON
WPAK
SOP8
15Mu
30Mu
20Mu
Renesas Electronics:
Total Low voltage
MOSFET package
monthly capacity
173Mu/M
1.0 billion Renesas
Electronics Power
Management and General
purpose devices shipped
each month
Components (1000M)
0
500
1,000
MOSFET: Target Applications
■ VR* for CPU Core, GPU, Chipset and Memory.
Server , Network, Telecom
Note Book PC
VGA
Win High Efficiency for
Note PC Power Supply
New Generation Power MOSFET
RJK0305DPB
■ Low RDS(on)=10mΩ
■ High Speed Switching(tf=3.0ns)
■ Low Gate Charge(Qg=8nC)
■ Primary / Secondary use for Brick Converter
and SR / Oring Switch for AC/DC Power Supply.
Server , Router
Telecom
■ Power Management Switch for Li+Ion Battery
(N/B PC).
*SR : Synchronous Rectification
* VR : Voltage Regulator
MOSFET: Discrete and Integrated Products Roadmap
MOSFET: Low Voltage Products Roadmap
MOSFET Roadmap for PC Li+ Battery
Battery capacity increasing in smaller packages
High-End
BVDSS / RDS(on) typ @ 10V
UMOS4
1.x mΩclass
UMOS5
UPA2744UT1A
30V / 1.6mΩ
UPA27xxT1A
30V / 1.2mΩ
UPA2743T1A
30V / 2.1mΩ
2.x mΩclass
RJK0356DPA
30V / 2.2mΩ
UPA2722UT1A
30V / 2.4mΩ
Low-End
Mid-Range
RJK0358DPA
30V / 3.4mΩ
3.xmΩclass
UPA2721AGR
Small PKG
30V / 3.6mΩ
UPA27XX
SOP
UPA27XX
HVSON
UPA28XX
mini-HVSON
5×6×1.8
5×6×1.0
3.3×3.3×0.95
UPA28XX
30V / 3.0mΩ
UPA2807
30V / 3.8mΩ
RJK0358DSP
30V / 3.2mΩ
5.xmΩclass
VDSS=35V
5.xmΩclass
UPA2720AGR
30V / 5.5mΩ
Small PKG
RJK0362DSP
30V / 5.0mΩ
UPA2742GR
35V / 4.0mΩ
2008
33
UMOS6
JET/BEAM
2009
© 2010 Renesas Electronics Corporation. All rights reserved.
UPA2804
30V / 5.6mΩ
RJK03E0DNS
30V / 4.3mΩ
RJK03E1DNS
30V / 5.3mΩ
2010
RJK03XX
SOP
RJK03XX
WPAK
RJK03XX
WSON3030
5×6×1.7
5×6×0.8
3.3×3.3×0.8
MOSFET Roadmap for Mobile Li+ Battery
2006
UMOS4
Process
6pHWSON
2.0 x 5.0 mm
2007
2008
UMOS5
UMOS6
UPA2451B
30V/~20mΩ
UPA2451C
30V/~20mΩ
UPA2454
30V/~11mΩ
UPA2450B
20V/~17.5mΩ
UPA2450C
20V/~17.5mΩ
UPA2455
20V/~13mΩ
8pHUSON
NEW
Smaller package
2.0 x 2.7 mm
4-pin EFIP
（BGA type）
～1.62 x 1.62 mm
UPA2351
30V/~40mΩ＊
UPA2351B
30V/~40mΩ＊
UPA2352
24V/~43mΩ＊
UPA2352B
24V/~43mΩ＊
UPA2350
20V/~35mΩ＊
UPA2350B
30V/~35mΩ＊
NEW
4-pin EFLIP
（LGA type）
Thinner/smaller CSP
Parts Name: VDS / RDS(on) max VGS = 4.5V
＊ Rss(on) ：2 chip on-state resistance
34
2009
～1.62 x
1.62 mm
© 2010 Renesas Electronics Corporation. All rights reserved.
UPA2460
30V/~20mΩ
UPA2461
20V/~17.5mΩ
対象品種
（計6品種）
Under Plan
UPA2351C
30V/~40mΩ＊
UPA2351
30V/~40mΩ＊
UPA2351B
30V/~40mΩ＊
UPA2352C
24V /~43mΩ＊
UPA2352
24V/~43mΩ＊
UPA2352B
24V/~43mΩ＊
UPA2350C
24V/~35mΩ＊
UPA2350
20V/~35mΩ＊
UPA2350B
20V/~35mΩ＊
UPA235xC
24V/~25mΩ＊
MOSFET: High Efficiency “JET” Series
(Compare with previous)
30% Cut RDS(on)
Ultra Low RDS(on)
Reduced the Thermal
Temperature
High
Saving
27% Cut Qg
Low Qg
LFPAK
WPAK
SOP-8
1.6mΩtyp
1.5mΩtyp
2.6mΩtyp
Low On State
Power Loss
Low Driver
Power Loss
Capable High Current
High Performance
Efficiency
Low Switching
Power Loss
Achieve High Freq.
& High Slew Rate
Energy
30% Cut Qgd
Low Qgd
MOSFET: Questions for the Customer – “JET” Series
• Our “Sweet Spot” for LV is 30V
• Many opportunities can be covered
with “JET” series
• High D-in success rate in US Market
• Use the Q&A from the RSSI Site “Rep
Sales Guide”
• With our vast lineup of LV and MV
MOSFETs, IGBTs, and Triacs, we have
a “fit” for just about any application.
• For assistance, please contact the
appropriate team member at HQ.
MOSFET: Figure of Merit Improvements
● Figure of Merit : FOM(Ron･Qg) at Vgs=4.5V
Total Gate Charge Qg (nC)
Low Charge Loss
100
Speed Series
97mΩnC
RENESAS
JET ‘07 RENESAS
Speed ‘05
RENESAS
8th Gen.
50
20% Down
JET Series
78mΩnC
20
10
1
2
5
RDS(on)(VGS=4.5V) typ (mΩ )
Low Conduction Loss
10
MOSFET: New “BEAM” Series
Target Application
< Test Conditions >
Vin=12V, Vout=1.2V, VDR=5V，fsw=350kHz, L=0.45uH, No Air flow
Server(CPU,Memory)
DT/NB-PC(CPU,Memory)
Graphic Card(GPU)
High Efficiency
Low thermal concern
Long battery life
92
91
90
Efficiency (%)
Features
93
BEAM
89
88
1H/1L
87
Hi : RJK0305DPB (common)
86
Lo : RJK03C0DPA (BEAM)
Lo : RJK0346DPA (JET)
85
84
1% Up
JET
83
0
5
10
15
Iout (A)
20
25
Low noise
Reducing EMI noise
BEAM+SBD
Space saving
BEAM small PKG (3mmx3mm)
30
MOSFET: Rds(on) Trend
8th Gen.
RDS(on)typ [mΩ] Vgs=4.5V
3.5
HAT2165H
3.4mΩ
Low Crss/Ciss
3.0 (0.073)
2.5
Speed
Nch 30V Low Side MOSFET
RJK0301DPB
3.0mΩ
Low Crss/Ciss
(0.044)
10th JET
2.0
RJK0346DPA
1.9mΩ
Low Qg/Qgd
1.5
11th BEAM
RJK03C0DPA
Next Gen.
1.7mΩ
Under Study
1.0
0.5
2002
2004
2006
2008
Year
2010
2012
2014
DrMOS
DrMOS and POL-SiP: Products, Packaging, Applications
<Products>  POL-SiP: stControl IC & MOSFETs 2nd Gen. PKG
1 Gen. PKG
(Wire
Bonding)
R2J20701
mass production
Under
developing
Under studying
For VR12/IMVP7
8x8mm
(Clip
Bonding)
Higher PKG
R2J20702
Performance
R2J2070x
R2J20751
POL all in one Device
6x6mm
PKG
R2J2060x
 DrMOS: Driver IC & MOSFETs
1st Gen. PKG
(Wire
Bonding)
2nd
R2J20604
R2J20602
in 2004
Higher
Performanc
e
Light & Heavy Load
Efficiency up
Wide
Input Range
(Clip
Bonding)
R2J20601
The World’s
first DrMOS
R2J20605A
8x8mm PKG
Gen. PKG
6x6mm PKGPWM=5V
Smaller
Package
Intel Rev3.0/ High
Voltage
R2J20653A R2J2065x
R2J20651A
R2J20651
R2J20652A
Intel Rev3.0
U
P
Light &Heavy Load
Efficiency up
VCIN=12V
<Technology>
Package
Wire bonding, PB free
MOSFET
D8 (20V)
IC
IP65 (16V)
Clip bonding, Terminal Pb free, Halogen free
BEAM (30V)
JET (30V)
IP75 (27V)
<Target Application>
Notebook PCs V-core & non Vcore DDR, etc…)
Server & Desktop PCs non V-core (VTT,
Server & Desktop PCs V-core
2004
2005
2006
2007
2008
2009
2010
DrMOS: R2J20605ANP 8x8 Package
New
QFN56
Target Application
Features
Telecom/Server
Storage/Graphic Card
Multi-Phase DC-DC converter
Gate Driver
Top MOSFET
Bottom MOSFET
Driver IC + Top MOS + Bottom MOS
50% smaller than discrete solution
Huge output current
up to 40A (same as R2J20602NP)
Pin Compatible (DrMOS spec.)
Functions
Multi-Phase
Driver
PWM Controller
(Multi-phase)
Driver
with SBD
3-Chip in One Package
Built-in SBD for boot-strapping
Remote ON/OFF
QFN 56pin
8 x 8 x 0.8mm
Capable of 5V PWM Signal
DrMOS: R2J20651NP/ANP 6x6 Package
6x6mm QFN-40pin = More Space Saving
DrMOS 6x6
Area = 36 mm2
R2J20602NP 8x8
Area = 64 mm2
Space-saving
- 44%
QFN-40pin 6x6mm
QFN-56pin 8x8mm
6mm x 6mm
Vin
Max
Iout
Max
Driver
supply
R2J20651NP
5V
16V
R2J20651ANP
New
R2J20652ANP
New
R2J20653ANP
35A
27V
PWM
Input
5V &
3.3V
Thermal
Warning
Thermal
Shutdown
Note
Sample
MP
130C


130C






5V,12V
and 20V 5V
5V
Status
115C
150C
Intel Rev3.0
VCIN=12V version
Intel Rev3.0
IGBT
(Insulated Gate Bipolar Transistor)
IGBT: Definition
 What is an IGBT?
Insulated Gate Bipolar Transistor
Isolated FET and a Bipolar Power Transistor in a single device
Noted for high efficiency and fast switching
Apps include inverters for various apps, large appliances,
electric cars, AC systems, PDP
 Interest building for US-based designs
– Induction Heating(IH) Cooktops
– Motor Control for Major Home Appliances
– Large Industrial Power Supplies




IGBT: Applications and Product Strengths
High efficiency
・High current
Low Vce(sat)
Low VF
・High speed
switching
High reliability
High capability
(Short circuit time)
Miniaturization
・Built-in FRD
・Small PKG
(TO-220Full Mold
LDPAK,MP-3A)
Renesas develops the best product by the application !
IGBT: Development Roadmap
High performance & High efficiency
Trench technology
Thin wafer
Optimum design of
cell structure.
30V
Next-Gen
Reverse conducting
11th
Gen.
600V/1200V
G6H-RC
G5H
Trench technology
1,100-1,200V
G6H
VGE=30V
VGE=30V
600V
G4S
High Short Circuit
Capability Type :
RJH60DXX Series
Trench technology
High speed
G5
600V
Planar construction
Optimum Design
for Specific
Applications
High Speed &Low
Vce (sat) Type :
RJH60FXX Series
G4
600V/1200V
2005
2006
2007
2008
2009
2010
2011
2012
IGBT: New G6H Series vs G5 Series
600V
100
90
Tc = 25 ℃
VGE = 15 V
80
Collector current IC
[A]
70
GN6060V5DP
(60A/600V)
(G5 series)
Improvement 30%
60
50
RJH60F5DPK
(80A/600V)
(G6H series)
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
IGBT: Renesas vs The Competition
Company D
Company C
Company B
Company A
G6H series
600V
IGBT: Features and Applications by Product Type
 G6H Ultra Low VCE(sat) Series 600V IGBT
 Features
– Ultra Low Collector to Emitter Saturation Voltage
– Built-in Fast Recovery Diode (FRD) in Single Package
– High-Speed Switching
 Applications
– Induction Heating (IH) Cooktop
– Current Resonance, Half Bridge
– Soft Switching Applications
 New Products
P/N
IC
VCE
VCE(sat)
tf
PKG
（ Resistance Load）
Tc=25℃
Tc=100℃
Typ.
IC
VGE
Typ.
IC
VCE
FRD
Status
WS
MP
RJH60F7ADPK
600V
90A
50A
1.35V
50A
15V
95ns
30A
300V
YES
TO-3P
OK
OK
RJH60F6DPK
600V
85A
45A
1.35V
45A
15V
95ns
30A
300V
YES
TO-3P
OK
3Q/’10
RJH60F5DPK
600V
80A
40A
1.37V
40A
15V
80ns
30A
300V
YES
TO-3P
OK
OK
RJH60F4DPK
600V
60A
30A
1.40V
30A
15V
80ns
30A
300V
YES
TO-3P
OK
OK
RJH60F0DPK
600V
50A
25A
1.40V
25A
15V
90ns
30A
300V
YES
TO-3P
OK
OK
IGBT: Features and Applications by Product Type
<<Will move to Appendix>>
 G6H Reverse-Conducting 1,000-1200V IGBT
 Features
– Single-chip IGBT with Integrated Diode
– Low Collector to Emitter Saturation Voltage
– High-Speed Switching
 Applications
– Single Transistor Type Voltage Resonance Circuit
– Induction Heating (IH) Cooktop
– Soft Switching Applications
 New Products (Target Spec)
P/N
VCE
IC
IC
VCE(sat)
Body
VF
PKG
(Tc=25℃)
(Tc=100℃)
Typ.
IC
VGE
Diode
Typ.
IF
Status
WS
MP
RJH1BF7RDPK
1100V
(60A)
(30A)
(2.00V)
60A
15V
YES
TBD
10A
TO-3P
2Q/’10
4Q/’10
RJH1CF7RDPK
1200V
(70A)
(35A)
(1.65V)
35A
15V
YES
2.1
10A
TO-3P
2Q/’10
4Q/’10
RJH1CF6RDPK
1200V
(60A)
(30A)
(1.65V)
30A
15V
YES
2.1
10A
TO-3P
2Q/’10
4Q/’10
RJH1CF5RDPK
1200V
(50A)
(25A)
(1.70V)
25A
15V
YES
TBD
10A
TO-3P
2Q/’10
4Q/’10
RJH1CF4RDPK
1200V
(40A)
(20A)
(1.70V)
20A
15V
YES
2.5
10A
TO-3P
2Q/’10
4Q/’10
IGBT: Questions for the Customer
 Applications
 Induction Heating, i.e Cooktop
– What type of circuit? Current resonant or voltage resonant?
– What is the load capacity (kW)?
– What is the operating current?
– What is the switching frequency?
– What package is required?
– What is the competitive parts and price (from customer)?
 Others
– What is the AC input voltage?
– What is the load capacity (kW)?
– What is the operating current?
– What is the switching frequency?
– Is a Fast Recovery Diode (FRD) required?
– Is short circuit capability required?
– What package is required?
Diode
Diode: W/W Market Share and Product Breakdown
Diode: Shipments by Application
Application
automotive
18%
consumer
17%
OA
4%
industry
25%
mobile
36%
VC. BSW
PIN
TV tuner
FEM, ASM
Diode: Product Lineup by Device Type
General
Purpose
Zener (ZN)
Schottky (SB)
High
Frequency
Small signal rectification
Switching (SW)
Small signal
Constant voltage
ESD protection
PW
ESD protection
Small signal
(under Io=0.5A)
Detector
Current Stopper
PW
(over Io=0.5A)
Rectifier
Current Stopper
Varicap (VC)
TV tuner, AFC, VCO
Band SW (BSW)
RF SW Diode
PIN (PIN)
ANT-SW
Diode: Products and Applications  Zener
 Zener Diodes for Surge Absorption
 High ESD Level (25-30kV) Type
– Protection at interface section of an electronic device
– For use at DC in location of Mobile Phones and other Portables
 High Speed Signal (~10kV), Low Capacitance Type
– Host PC and Peripherals, ex. USB 2.0
ESD Tolerance (kV)
Lineup
30
HZM27FA
HZM6.8MFARKZ6.2KL
RKZ6.8TKK
HZM6.8ZMFA
(bi-directional)
RKZ6.8ZMFAKT
20
High ESD level Series
Low capacitance Series
HZM6.2ZMWA/FA
10
HZL6.8Z4
HZD6.2Z4
HZM6.8Z4MWA
RKZ6.2Z4MFAKT
HZM6.8Z4MFA
1
HZM5.6ZFA
10
Capacitance (pF)
100
Diode: Market Needs, Future Activity  Zener
 Market Needs






Compliance with Directives on EMC
(Electromagnetic Compatibility)
Small Distortion on Wave-Form in High-Speed
Signal Lines (USB, etc)
Small and Thin Package for High-Density Surface-Mount
Environmentally-Friendly Products
Future Activity




High ESD (Electrostatic Discharge) Level Based on
IEC61000-4-2
Low Capacitance
Compound and Small Products
(four devices/package, two devices/package)
VSON-5 (four devices)
Support for Lead-Free and Halogen-Free Products
Diode: Application Examples and Packaging  Schottky
 Schottky Diodes for Circuit Protection




High-Intensity LED
LED and LCD Drivers
CAN and LIN Bus (Bi-Directional Type)  Automotive
Battery for Mobile Equipment
 Small/Ultra-Small Packaging
 Bare Die also available for integration into products like LED
Modules
Diode: Market Needs and Future Activity  Schottky
 Market Needs





High Efficiency/Low Loss
Small Distortion for High-Frequency Signals
Wide Variation of Forward Current
Small and light-weight products
Environmentally-Friendly Products
 Future Activity






Low Forward-Voltage Drop
Low Leakage Current
Low Capacitance
Wide Lineups of Products
Small and Compound Products
Support for Lead-Free and Halogen-Free Products
Thank You