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Transcript
CHAPTER 8: MICROWAVE DIODES, QUANTUM EFFECT & HOT ELECTRON DEVICES Part 1 QUANTUM EFFECT & HOT ELECTRON PHENOMENA Quantum effect & hot-electron phenomena to enhance circuit performances Advantage of quantum effect devices (QEDs) & hot electron devices (HEDs) : Higher functionality/speed can perform relatively complex circuit functions with a greatly reduced device count replacing large numbers of transistors or passive circuit components COVERAGE OF CHAPTER 8 Millimeter-wave devices over those operated at lower frequencies The quantum tunneling phenomenon and its related devices – tunnel diode, resonant tunneling diode (RTD) The IMPATT (IMPact ionization Avalanche Transit-Time) diode – the most powerful semiconductor source of millimeter wave power The Transferred-Electron Device (TED) and its transit-time domain mode The Real-Space-Transfer (RST) transistor The most commonly used transmission lines (stripline and microstrip line) aren't the only way to transmit a signal from one place to another. Figure 8.2. Basic types of planar transmission lines: (a) microstrip, (b) coplanar waveguide stripline, and (c) suspended-substrate stripline. A transmission line is a sub-category of waveguides that uses some physical configuration of metal and/or dielectrics to direct a signal along the desired path. Most familiar transmission lines (e.g., microstrip line) use two conductors; the impedance is: Z0 L C L=inductance (H) C=capacitance (F) RESONANT CAVITY • metal-walled chamber made of lowresistivity material enclosing a good dielectric • Cavity supports: transverse electric (TE) & transverse magnetic (TM) modes of propagation • Electromagnetic wave is confined by the wall of the cavity • E in electric field capacitance C • E in magnetic field inductance L • LC tuned resonant tank circuit present in the cavity • resonant mode occur in a cavity – freq with length d along Z axis (/2) – fig. 3(a) Figure 8.3. Resonant cavity: (a) resonator shape, (b) magnetic field pattern, and (c) electric field pattern. RESONANT CAVITY General mode dependent equation for resonant freq. of the cavity: fr 1 2 2 2 m n p a b d 2 2 c m n p fr 2 a b c Mode in cavity Txm,n,p: 2 2 0 0 c 1 x: E for electric dominant mode, M for magnetic dominant mode m: no. of half-wavelength in a dimension : permeability n: no. of half-wavelength in b dimension 0: permeability for vacuum (=0) p: no. of half wavelength in the d dimension c: speed of light in vacuum : permittivity 0: permittivity for vacuum (=0) TUNNEL DIODE The tunnel diode has a region in its voltage current characteristic where the current decreases with increased forward voltage, known as its negative resistance region. This characteristic makes the tunnel diode useful in oscillators and as a microwave amplifier. In the TUNNEL DIODE, the semiconductor materials used in forming a junction are doped to the extent of one-thousand impurity atoms for ten-million semiconductor atoms. This heavy doping produces an extremely narrow depletion zone . Also because of the heavy doping, a tunnel diode exhibits an unusual currentvoltage characteristic curve as compared with that of an ordinary junction diode. Figure 8.4. Static current-voltage characteristics of a typical tunnel diode. The upper figures show the band diagrams of the device at different bias voltages. • Forward bias: • electrons tunnel from n-side to pside • When V=(Vp+Vn)/3 – I reaches Ip • When V is further increased (Vp<V<Vv) tunnel I decreased (fewer available unoccupied states in pside) until I can no longer flow • With further increased V – normal thermal I will flow (V>Vv) • Summary: •In the forward direction the tunneling I increases from ‘0’ to a peak current Ip as the V increases • Further increase in V, the I decreases to ‘0’ when V=Vn+Vp, (V=applied voltage) • Empirical form for the I-V characteristics is given by V I Ip V p exp 1 V V p I 0 exp qV kT Current ratios, I p Iv I ratios of: Ge – 8:1 GaSb – 12:1 GaAs – 12:1 Figure 8.5. Typical current-voltage characteristics of Ge, GaSb, and GaAs tunnel diodes at room temperature. IMPATT DIODE • IMPATT: IMPact ionization Avalanche Transit-Time • Employ impact ionization & transit-time properties to produce a negative resistance at microwave frequencies • One of the most powerful solid-state sources of microwave power • Can generate the highest cw (continuous wave) power output of all solid-state devices at millimeter-wave frequencies (above 30GHz). • Extensively used in radar systems & alarm systems • Noteworthy difficulty in IMPATT applications: the noise is high because of random fluctuations of the avalanche multiplication processes •1st IMPATT diode obtained from silicon p-n junction diode biased into reverse avalanche breakdown and mounted in a microwave cavity IMPATT diode(IMPact ionization Avalanche Transit Timediode) ∗A reverse biased p-n junction capable of producing oscillations at up to100GHz Applied voltage is slowly increased from zero. The electric field at the junction builds up until it reaches the threshold for avalanche breakdown. The avalanche produces holes which move quickly to the cathode and electrons which take much longer to reach the anode. As the electrons move towards the anode the electric field at the junction drops and so shuts off the avalanche. When the electrons reach the anode the electric field can build up again and a new avalanche develops. The frequency of the oscillation is fixed by the transit time of the electrons through the n-region. IMPATT DIODE • One-sided abrupt p-n junction: • Most avalanche multiplication occurs in a narrow region near the highest field between 0 & xA (width of avalanche region) • Hi-lo structure: • Avalanche region confined within the N1 region • Lo-hi-lo structure: • a “clump” of donor atoms is located at x=b •High field region exists from x=0 to x=b, xA=b, max. field can be Figure 8.6. Doping profiles and electric-field much lower than hi-lo structure distributions at avalanche breakdown of three single-drift IMPATT diodes: (a) one-sided abrupt p-n junction; (b) hi-lo structure; and (c) lo-hi-lo structure. TRANSFERRED-ELECTRON DEVICES (TEDs) Transferred Electron Devices (TEDs), widely know as Gunn diodes, are gallium arsenide (GaAs) or indium phosphide (InP) devices which are capable of converting direct current (DC) power into radio frequency (RF) power when they are coupled to the appropriate resonator. Typical applications for Gunn diode oscillators include local oscillators, voltage controlled oscillators (VCOs), radar and communication transmitters, Doppler motion detectors, intrusion alarms, police radar detectors, smart munitions, and Automotive Forward Looking Radars (AFLRs). Gunn Diodes are two-terminal negative-impedance semiconductors which are similar to tunnel diodes They are mainly found in microwave oscillators in the range from ten to several hundred Gigahertz. TRANSFERRED-ELECTRON DEVICES (TEDs) Negative Differential Resistance (NDR) • Electron effect – the transfer of the conduction electrons from a high-mobility energy valley to low-mobility higherenergy satellite valley. • Current density: J qn1 E J qn 2 E 0 E Ea E Eb • NDR region – between ET & EV Figure 8.8. The current versus electricfield characteristic of a two-valley semiconductor. ET is the threshold field and EV is the valley field. TRANSFERRED-ELECTRON DEVICES (TEDs) Transferred-electron mechanism is to give a rise to Negative Differential Resistance (NDR): The lattice temp. must be low enough that in the absence of energy E most of electrons are in lower valley (conduction band minimum) – separation between 2 valleys E>kT In the lower valley the electrons must have high mobility & small effective mass, in the upper valley electrons must have low mobility & large effective mass Energy separation between 2 valleys must be smaller than the semicond. bandgap (i.e. E<Eg) so that avalanche breakdown does not begin before the transfer of electrons into the upper valleys N-type GaAs & InP – widely studied & used. Device operation • Have epitaxial layers on n+ substrates • Typical donor conc. range: 1014 to 1016cm-3 • typical device lengths L range: few to several hundreds • Fig (a) & (b): energy band diagram at thermal equilibrium & electric-field distribution when V=3VT • VT: product of threshold field ET & device length L • To improve performance: use 2-zone cathode contact (consists of high-field zone & n+ zone – fig. (b)(similar to lohi-lo IMPATT diode) • electrons are heated in the high-field Figure 8.9. Two cathode contacts for transferred-electron zone injected to the active region devices (TEDs) (a) Ohmic contact and (b) twozone Schottky barrier contact. • Operational of TED depends on 5 factors: • Doping concentration • Doping uniformity • Length of the active region • Cathode contact characteristics • Type of circuit • Operating bias voltage • Important mode of operation for TED: transit-time domain mode (+ve & -ve charges separated by a small distance – dipole formation/domain) • Electric field E in dipole > E on either side of it • Because of NDR, I in low field region > I in high field region Figure 8.10. Formation of a domain (dipole layer) in a medium that has a negative differential resistivity (NDR). •Time required for domain to travel from cathode to anode : L/v (L:active device length, v: average velocity) •Freq. for transit time domain mode: f=v/L Test 2 will be on Thursday 16th Oct. 2008 @ K. Perlis (DKP1) 8.30pm – 9.30pm