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Download 0261 - Optocoupler, Phototransistor Output With Base Connector
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4N25/4N26/4N27/4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES • Isolation test voltage 5300 VRMS A 1 6 B C 2 5 C • Input-output coupling capacitance < 0.5 pF NC 3 4 E • Industry standard dual-in-line 6 pin package • Interfaces with common logic families • Lead (Pb)-free component i179004 • Component in accordance to 2002/95/EC and WEEE 2002/96/EC DESCRIPTION The 4N25 family is an industry standard single channel phototransistor coupler. This family includes the 4N25/4N26/4N27/4N28. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. These couplers are underwriters laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. This isolation performance is accomplished through special Vishay manufacturing process. Compliance to DIN EN 60747-5-5 partial discharge isolation specification is available by ordering option 1. These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are also available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. RoHS APPLICATIONS • AC mains detection • Reed relay driving • Switch mode power supply feedback • Telephone ring detection • Logic ground isolation • Logic coupling with high frequency noise rejection AGENCY APPROVALS • UL1577, file no. E76222 system code A • DIN EN 60747-5-5 available with option 1 Note For additional design information see application note 45 normalized curves ORDER INFORMATION PART REMARKS 4N25 CTR > 20 %, DIP-6 4N26 CTR > 20 %, DIP-6 4N27 CTR > 10 %, DIP-6 4N28 CTR > 10 %, DIP-6 ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 60 mA t ≤ 10 µs Surge current IFSM 3 A Pdiss 100 mW Collector emitter breakdown voltage VCEO 70 V Emitter base breakdown voltage VEBO 7 V IC 50 mA IC 100 mA Pdiss 150 mW Power dissipation OUTPUT Collector current Power dissipation www.vishay.com 132 t ≤ 1.0 ms For technical questions, contact: [email protected] Document Number: 83725 Rev. 1.6, 07-May-08 4N25/4N26/4N27/4N28 Optocoupler, Phototransistor Output, with Base Connection ABSOLUTE MAXIMUM RATINGS PARAMETER Vishay Semiconductors (1) TEST CONDITION SYMBOL VALUE UNIT VISO COUPLER Isolation test voltage 5300 VRMS Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index DIN IEC 112/VDE 0303, part 1 175 Ω VIO = 500 V, Tamb = 25 °C RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 Ω Storage temperature Tstg - 55 to + 125 °C Operating temperature Tamb - 55 to + 100 °C Tj 125 °C Tsld 260 °C Isolation resistance Junction temperature max.10 s dip soldering: distance to seating plane ≥ 1.5 mm Soldering temperature (2) Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (1) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage (2) IF = 50 mA VF 1.3 1.5 V Reverse current (2) VR = 3.0 V IR 0.1 100 µA VR = 0 V CO 25 Collector base breakdown voltage (2) IC = 100 µA BVCBO 70 V Collector emitter breakdown voltage(2) IC = 1.0 mA BVCEO 30 V IE = 100 µA BVECO 7 V Capacitance pF OUTPUT Emitter collector breakdown voltage (2) ICEO(dark) (2) ICBO(dark) (2) Collector emitter capacitance VCE = 10 V, (base open) 4N25 5 50 nA 4N26 5 50 nA 4N27 5 50 nA 4N28 10 100 nA 2.0 20 nA VCB = 10 V, (emitter open) VCE = 0 CCE 6.0 pF COUPLER Isolation test voltage (2) Peak, 60 Hz VIO ICE = 2.0 mA, IF = 50 mA VCE(sat) Resistance, input output (2) VIO = 500 V RIO Capacitance, input output f = 1 MHz CIO Saturation voltage, collector emitter 5300 V 0.5 100 V GΩ 0.5 pF Notes (1) T amb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively. Document Number: 83725 Rev. 1.6, 07-May-08 For technical questions, contact: [email protected] www.vishay.com 133 4N25/4N26/4N27/4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 10 V, IF = 10 mA DC current transfer ratio PART SYMBOL MIN. TYP. 4N25 CTRDC 20 50 MAX. UNIT % 4N26 CTRDC 20 50 % 4N27 CTRDC 10 30 % 4N28 CTRDC 10 30 % Note Indicates JEDEC registered values. SWITCHING CHARACTERISTICS PARAMETER Rise and fall times TEST CONDITION SYMBOL VCE = 10 V, IF = 10 mA, RL = 100 Ω tr , tf MIN. TYP. MAX. UNIT 2.0 µs TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.5 1.3 NCTR - Normalized CTR TA = - 55 °C 1.2 TA = 25 °C 1.1 1.0 0.9 TA = 85 °C 0.8 1 10 100 IF - Forward Current (mA) i4n25_01 NCTR - Normalized CTR 1.0 TA = 50 °C 0.5 NCTR(SAT) NCTR 0.1 1 1.0 TA = 25 °C 0.5 NCTR(SAT) Fig. 3 - Normalized Non-Saturated and Saturated CTR vs. LED Current Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) VCE = 0.4 V 1.0 TA = 70 °C 0.5 NCTR(SAT) NCTR NCTR 0.0 i4n25_02 1 10 100 IF - LED Current (mA) Fig. 2 - Normalized Non-Saturated and Saturated CTR vs. LED Current www.vishay.com 134 100 1.5 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) = 0.4 V 0 10 IF - LED Current (mA) i4n25_03 Fig. 1 - Forward Voltage vs. Forward Current 1.5 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) VCE = 0.4 V 0.0 0.7 0.1 NCTR - Normalized CTR VF -Forward Voltage (V) 1.4 0.0 0.1 i4n25_04 1 10 100 IF - LED Current (mA) Fig. 4 - Normalized Non-Saturated and Saturated CTR vs. LED Current For technical questions, contact: [email protected] Document Number: 83725 Rev. 1.6, 07-May-08 4N25/4N26/4N27/4N28 Optocoupler, Phototransistor Output, with Base Connection 1.5 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 °C CTRCE(sat) VCE = 0.4 V NCTRcb - Normalized CTRcb NCTR - Normalized CTR 1.5 1.0 TA = 85 °C 0.5 NCTR(SAT) NCTR 1 10 100 IF - LED Current (mA) i4n25_05 0.5 25 °C 50 °C 70 °C 1 10 100 IF - LED Current (mA) Fig. 8 - Normalized CTRcb vs. LED Current and Temperature 35 10 30 25 50 °C 20 70 °C 15 85 °C 25 °C 10 5 Normalized Photocurrent ICE - Collector Current (mA) 1.0 i4n25_08 Fig. 5 - Normalized Non-Saturated and Saturated CTR vs. LED Current 0 10 20 30 40 50 60 IF - LED Current (mA) i4n25_06 Normalized to: IF = 10 mA, TA = 25 °C 1 0.1 Nib, TA = - 20 °C Nib, TA = 20 °C Nib, TA = 50 °C Nib, TA = 70 °C 0.01 0.1 0 i4n25_09 Fig. 6 - Collector Emitter Current vs. Temperature and LED Current 1 10 100 IF - LED Current (mA) Fig. 9 - Normalized Photocurrent vs. IF and Temperature 1.2 105 70 °C 104 NhFE - Normalized hFE ICEO - Collector Emitter (nA) Normalized to: VCB = 9.3 V, IF = 10 mA, TA = 25 °C 0.0 0.1 0.0 0.1 Vishay Semiconductors 103 10 2 VCE = 10 V 101 Typical 100 10- 1 10- 2 - 20 i4n25_07 1.0 25 °C - 20 °C 0.8 Normalized to: IB = 20 µA, VCE = 10 V, TA = 25 °C 0.6 0.4 0 20 40 60 80 100 Tamb- Ambient Temperature (°C) Fig. 7 - Collector Emitter Leakage Current vs. Temperature Document Number: 83725 Rev. 1.6, 07-May-08 1 i4n25_10 10 100 1000 Ib - Base Current (µA) Fig. 10 - Normalized Non-Saturated hFE vs. Base Current and Temperature For technical questions, contact: [email protected] www.vishay.com 135 4N25/4N26/4N27/4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, NhFE(sat) - Normalized Saturated hFE with Base Connection 1.5 VCC = 5.0 V Normalized to: VCE = 10 V, Ib = 20 µA TA = 25 °C 70 °C 50 °C F = 10 kHz DF = 50 % 1.0 25 °C VO - 20 °C 0.5 IF = 10 mA VCE = 0.4 V 0.0 1 10 100 1000 i4n25_14 Ib - Base Current (µA) i4n25_11 Fig. 11 - Normalized hFE vs. Base Current and Temperature tPHL 2.0 100 1.5 10 tPLH 1 0.1 1 tPHL - Propagation Delay (µs) IF = 10 mA, TA = 25 °C VCC = 5.0 V, Vth = 1.5 V i4n25_12 Fig. 14 - Switching Schematic 2.5 1000 tPLH- Propagation Delay (µs) RL 1.0 100 10 RL - Collector Load Resistor (kΩ) Fig. 12 - Propagation Delay vs. Collector Load Resistor IF tD VO tR tPLH VTH = 1.5 V tPHL tS tF i4n25_13 Fig. 13 - Switching Timing www.vishay.com 136 For technical questions, contact: [email protected] Document Number: 83725 Rev. 1.6, 07-May-08 4N25/4N26/4N27/4N28 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors PACKAGE DIMENSIONS in millimeters For 4N25/26/27..... see DIL300-6 Package dimension in the Package Section. For 4N28 and for products with an option designator (e.g. 4N25-X001 or 4N26-X007)..... see DIP-6 Package dimensions in the Package Section. DIL300-6 Package Dimensions 8.8 max. 7.62 ± 0.1 B 8.6 max. 0.3 A 3.3 0.5 min. 4.2 ± 0.1 6.4 max. 0.58 max. 0.3 max. 1.54 2.54 nom. 9 ± 0.6 0.4 B 5.08 nom. A Weight: ca. 0.50 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board 6 5 4 technical drawings according to DIN specifications 14770 1 2 3 DIP-6 Package Dimensions 3 2 1 4 5 6 Pin one ID 0.248 (6.30) 0.256 (6.50) ISO method A 0.335 (8.50) 0.343 (8.70) 0.039 (1.00) min. 0.048 0.300 (7.62) (0.45) typ. 0.022 (0.55) 0.130 (3.30) 0.150 (3.81) 18 ° 4° typ. 0.114 (2.90) 0.031 (0.80) min. 0.031 (0.80) 0.018 (0.45) 0.035 (0.90) 0.022 (0.55) 0.100 (2.54) typ. 0.130 (3.0) 3° to 9° 0.010 (0.25) typ. 0.300 to 0.347 (7.62 to 8.81) i178004 Document Number: 83725 Rev. 1.6, 07-May-08 For technical questions, contact: [email protected] www.vishay.com 137 4N25/4N26/4N27/4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection Option 6 Option 7 Option 9 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.300 (7.62) typ. 0.375 (9.53) 0.395 (10.03 ) 0.300 (7.62) ref. 0.028 (0.7) 0.180 (4.6) 0.160 (4.1) 0.315 (8.0) min. 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) www.vishay.com 138 0.0040 (0.102) 0.0098 (0.249) 0.331 (8.4) min. 0.406 (10.3) max. For technical questions, contact: [email protected] 0.012 (0.30 ) typ. 0.020 (0.51 ) 0.040 (1.02 ) 15° max. 0.315 (8.00) min. 18450 Document Number: 83725 Rev. 1.6, 07-May-08 4N25/4N26/4N27/4N28 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83725 Rev. 1.6, 07-May-08 For technical questions, contact: [email protected] www.vishay.com 139 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1