Download 0261 - Optocoupler, Phototransistor Output With Base Connector

4N25/4N26/4N27/4N28
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
FEATURES
• Isolation test voltage 5300 VRMS
A
1
6 B
C
2
5 C
• Input-output coupling capacitance < 0.5 pF
NC
3
4 E
• Industry standard dual-in-line 6 pin package
• Interfaces with common logic families
• Lead (Pb)-free component
i179004
• Component in accordance to
2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
The 4N25 family is an industry standard single channel
phototransistor coupler. This family includes the
4N25/4N26/4N27/4N28. Each optocoupler consists of
gallium arsenide infrared LED and a silicon NPN
phototransistor.
These couplers are underwriters laboratories (UL) listed to
comply with a 5300 VRMS isolation test voltage. This isolation
performance is accomplished through special Vishay
manufacturing process.
Compliance to DIN EN 60747-5-5 partial discharge isolation
specification is available by ordering option 1.
These isolation processes and the Vishay ISO9001 quality
program results in the highest isolation performance
available for a commercial plastic phototransistor
optocoupler.
The devices are also available in lead formed configuration
suitable for surface mounting and are available either on
tape and reel, or in standard tube shipping containers.
RoHS
APPLICATIONS
• AC mains detection
• Reed relay driving
• Switch mode power supply feedback
• Telephone ring detection
• Logic ground isolation
• Logic coupling with high frequency noise rejection
AGENCY APPROVALS
• UL1577, file no. E76222 system code A
• DIN EN 60747-5-5 available with option 1
Note
For additional design information see application note 45 normalized curves
ORDER INFORMATION
PART
REMARKS
4N25
CTR > 20 %, DIP-6
4N26
CTR > 20 %, DIP-6
4N27
CTR > 10 %, DIP-6
4N28
CTR > 10 %, DIP-6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5
V
Forward current
IF
60
mA
t ≤ 10 µs
Surge current
IFSM
3
A
Pdiss
100
mW
Collector emitter breakdown voltage
VCEO
70
V
Emitter base breakdown voltage
VEBO
7
V
IC
50
mA
IC
100
mA
Pdiss
150
mW
Power dissipation
OUTPUT
Collector current
Power dissipation
www.vishay.com
132
t ≤ 1.0 ms
For technical questions, contact: [email protected]
Document Number: 83725
Rev. 1.6, 07-May-08
4N25/4N26/4N27/4N28
Optocoupler, Phototransistor Output,
with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Vishay Semiconductors
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
VISO
COUPLER
Isolation test voltage
5300
VRMS
Creepage distance
≥ 7.0
mm
Clearance distance
≥ 7.0
mm
Isolation thickness between emitter and
detector
≥ 0.4
mm
Comparative tracking index
DIN IEC 112/VDE 0303, part 1
175
Ω
VIO = 500 V, Tamb = 25 °C
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
Storage temperature
Tstg
- 55 to + 125
°C
Operating temperature
Tamb
- 55 to + 100
°C
Tj
125
°C
Tsld
260
°C
Isolation resistance
Junction temperature
max.10 s dip soldering:
distance to seating plane
≥ 1.5 mm
Soldering temperature (2)
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage (2)
IF = 50 mA
VF
1.3
1.5
V
Reverse current (2)
VR = 3.0 V
IR
0.1
100
µA
VR = 0 V
CO
25
Collector base breakdown voltage (2)
IC = 100 µA
BVCBO
70
V
Collector emitter breakdown
voltage(2)
IC = 1.0 mA
BVCEO
30
V
IE = 100 µA
BVECO
7
V
Capacitance
pF
OUTPUT
Emitter collector breakdown voltage
(2)
ICEO(dark) (2)
ICBO(dark) (2)
Collector emitter capacitance
VCE = 10 V, (base open)
4N25
5
50
nA
4N26
5
50
nA
4N27
5
50
nA
4N28
10
100
nA
2.0
20
nA
VCB = 10 V,
(emitter open)
VCE = 0
CCE
6.0
pF
COUPLER
Isolation test voltage (2)
Peak, 60 Hz
VIO
ICE = 2.0 mA, IF = 50 mA
VCE(sat)
Resistance, input output (2)
VIO = 500 V
RIO
Capacitance, input output
f = 1 MHz
CIO
Saturation voltage, collector emitter
5300
V
0.5
100
V
GΩ
0.5
pF
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.
Document Number: 83725
Rev. 1.6, 07-May-08
For technical questions, contact: [email protected]
www.vishay.com
133
4N25/4N26/4N27/4N28
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
VCE = 10 V, IF = 10 mA
DC current transfer ratio
PART
SYMBOL
MIN.
TYP.
4N25
CTRDC
20
50
MAX.
UNIT
%
4N26
CTRDC
20
50
%
4N27
CTRDC
10
30
%
4N28
CTRDC
10
30
%
Note
Indicates JEDEC registered values.
SWITCHING CHARACTERISTICS
PARAMETER
Rise and fall times
TEST CONDITION
SYMBOL
VCE = 10 V, IF = 10 mA, RL = 100
Ω
tr , tf
MIN.
TYP.
MAX.
UNIT
2.0
µs
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1.5
1.3
NCTR - Normalized CTR
TA = - 55 °C
1.2
TA = 25 °C
1.1
1.0
0.9
TA = 85 °C
0.8
1
10
100
IF - Forward Current (mA)
i4n25_01
NCTR - Normalized CTR
1.0
TA = 50 °C
0.5
NCTR(SAT)
NCTR
0.1
1
1.0
TA = 25 °C
0.5
NCTR(SAT)
Fig. 3 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
CTRCE(sat) VCE = 0.4 V
1.0
TA = 70 °C
0.5
NCTR(SAT)
NCTR
NCTR
0.0
i4n25_02
1
10
100
IF - LED Current (mA)
Fig. 2 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
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134
100
1.5
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
CTRCE(sat) = 0.4 V
0
10
IF - LED Current (mA)
i4n25_03
Fig. 1 - Forward Voltage vs. Forward Current
1.5
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
CTRCE(sat) VCE = 0.4 V
0.0
0.7
0.1
NCTR - Normalized CTR
VF -Forward Voltage (V)
1.4
0.0
0.1
i4n25_04
1
10
100
IF - LED Current (mA)
Fig. 4 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
For technical questions, contact: [email protected]
Document Number: 83725
Rev. 1.6, 07-May-08
4N25/4N26/4N27/4N28
Optocoupler, Phototransistor Output,
with Base Connection
1.5
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
CTRCE(sat) VCE = 0.4 V
NCTRcb - Normalized CTRcb
NCTR - Normalized CTR
1.5
1.0
TA = 85 °C
0.5
NCTR(SAT)
NCTR
1
10
100
IF - LED Current (mA)
i4n25_05
0.5
25 °C
50 °C
70 °C
1
10
100
IF - LED Current (mA)
Fig. 8 - Normalized CTRcb vs. LED Current and Temperature
35
10
30
25
50 °C
20
70 °C
15
85 °C
25 °C
10
5
Normalized Photocurrent
ICE - Collector Current (mA)
1.0
i4n25_08
Fig. 5 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
0
10
20
30
40
50
60
IF - LED Current (mA)
i4n25_06
Normalized to:
IF = 10 mA, TA = 25 °C
1
0.1
Nib, TA = - 20 °C
Nib, TA = 20 °C
Nib, TA = 50 °C
Nib, TA = 70 °C
0.01
0.1
0
i4n25_09
Fig. 6 - Collector Emitter Current vs.
Temperature and LED Current
1
10
100
IF - LED Current (mA)
Fig. 9 - Normalized Photocurrent vs. IF and Temperature
1.2
105
70 °C
104
NhFE - Normalized hFE
ICEO - Collector Emitter (nA)
Normalized to:
VCB = 9.3 V, IF = 10 mA, TA = 25 °C
0.0
0.1
0.0
0.1
Vishay Semiconductors
103
10
2
VCE = 10 V
101
Typical
100
10- 1
10- 2
- 20
i4n25_07
1.0
25 °C
- 20 °C
0.8
Normalized to:
IB = 20 µA, VCE = 10 V,
TA = 25 °C
0.6
0.4
0
20
40
60
80
100
Tamb- Ambient Temperature (°C)
Fig. 7 - Collector Emitter Leakage Current vs. Temperature
Document Number: 83725
Rev. 1.6, 07-May-08
1
i4n25_10
10
100
1000
Ib - Base Current (µA)
Fig. 10 - Normalized Non-Saturated hFE vs.
Base Current and Temperature
For technical questions, contact: [email protected]
www.vishay.com
135
4N25/4N26/4N27/4N28
Vishay Semiconductors Optocoupler, Phototransistor Output,
NhFE(sat) - Normalized Saturated hFE
with Base Connection
1.5
VCC = 5.0 V
Normalized to:
VCE = 10 V, Ib = 20 µA
TA = 25 °C
70 °C 50 °C
F = 10 kHz
DF = 50 %
1.0
25 °C
VO
- 20 °C
0.5
IF = 10 mA
VCE = 0.4 V
0.0
1
10
100
1000
i4n25_14
Ib - Base Current (µA)
i4n25_11
Fig. 11 - Normalized hFE vs. Base Current and Temperature
tPHL
2.0
100
1.5
10
tPLH
1
0.1
1
tPHL - Propagation Delay (µs)
IF = 10 mA, TA = 25 °C
VCC = 5.0 V, Vth = 1.5 V
i4n25_12
Fig. 14 - Switching Schematic
2.5
1000
tPLH- Propagation Delay (µs)
RL
1.0
100
10
RL - Collector Load Resistor (kΩ)
Fig. 12 - Propagation Delay vs. Collector Load Resistor
IF
tD
VO
tR
tPLH
VTH = 1.5 V
tPHL
tS
tF
i4n25_13
Fig. 13 - Switching Timing
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136
For technical questions, contact: [email protected]
Document Number: 83725
Rev. 1.6, 07-May-08
4N25/4N26/4N27/4N28
Optocoupler, Phototransistor Output,
with Base Connection
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
For 4N25/26/27..... see DIL300-6 Package dimension in the Package Section.
For 4N28 and for products with an option designator (e.g. 4N25-X001 or 4N26-X007)..... see DIP-6 Package dimensions in the
Package Section.
DIL300-6 Package Dimensions
8.8 max.
7.62 ± 0.1
B
8.6 max.
0.3 A
3.3
0.5 min.
4.2 ± 0.1
6.4 max.
0.58 max.
0.3 max.
1.54
2.54 nom.
9 ± 0.6
0.4 B
5.08 nom.
A
Weight: ca. 0.50 g
Creepage distance: > 6 mm
Air path: > 6 mm
after mounting on PC board
6 5 4
technical drawings
according to DIN
specifications
14770
1 2 3
DIP-6 Package Dimensions
3
2
1
4
5
6
Pin one ID
0.248 (6.30)
0.256 (6.50)
ISO method A
0.335 (8.50)
0.343 (8.70)
0.039
(1.00)
min.
0.048
0.300 (7.62)
(0.45)
typ.
0.022 (0.55)
0.130 (3.30)
0.150 (3.81)
18 °
4°
typ.
0.114 (2.90)
0.031 (0.80) min.
0.031 (0.80)
0.018 (0.45)
0.035 (0.90)
0.022 (0.55)
0.100 (2.54) typ.
0.130 (3.0)
3° to 9°
0.010 (0.25)
typ.
0.300 to 0.347
(7.62 to 8.81)
i178004
Document Number: 83725
Rev. 1.6, 07-May-08
For technical questions, contact: [email protected]
www.vishay.com
137
4N25/4N26/4N27/4N28
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
Option 6
Option 7
Option 9
0.407 (10.36)
0.391 (9.96)
0.307 (7.8)
0.291 (7.4)
0.300 (7.62)
typ.
0.375 (9.53)
0.395 (10.03 )
0.300 (7.62)
ref.
0.028 (0.7)
0.180 (4.6)
0.160 (4.1)
0.315 (8.0)
min.
0.014 (0.35)
0.010 (0.25)
0.400 (10.16)
0.430 (10.92)
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138
0.0040 (0.102)
0.0098 (0.249)
0.331 (8.4)
min.
0.406 (10.3)
max.
For technical questions, contact: [email protected]
0.012 (0.30 ) typ.
0.020 (0.51 )
0.040 (1.02 )
15° max.
0.315 (8.00)
min.
18450
Document Number: 83725
Rev. 1.6, 07-May-08
4N25/4N26/4N27/4N28
Optocoupler, Phototransistor Output,
with Base Connection
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 83725
Rev. 1.6, 07-May-08
For technical questions, contact: [email protected]
www.vishay.com
139
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1