Download IRF3205 Series

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IRF3205 Series
SEMICONDUCTOR
Nell High Power Products
N-Channel Power MOSFET
(110A, 55Volts)
DESCRIPTION
The Nell IRF3205 is a three-terminal silicon
device with current conduction capability
of 110A, fast switching speed, low on-state
resistance, breakdown voltage rating of 55V,
and max. threshold voltage of 4 volts.
They are designed as an extremely efficient
and reliable device for use in a wide variety of
applications. These transistors can be operated
directly from integrated circuits.
D
D
G
G
D
FEATURES
S
S
TO-263(D2PAK)
(IRF3205H)
TO-220AB
(IRF3205A)
RDS(ON) = 0.010Ω @ VGS = 10V
D
Ultra low gate charge(150nC max.)
Low reverse transfer capacitance
(C RSS = 210pF typical)
Fast switching capability
100% avalanche energy specified
D (Drain)
Improved dv/dt capability
175°C operation temperature
PRODUCT SUMMARY
ID (A)
110
ID (A), Package Limited
75
VDSS (V)
55
RDS(ON) (Ω)
0.010 @ V GS = 10V
QG(nC) max.
150
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VDSS
Drain to Source voltage
T J =25°C to 150°C
55
V DGR
Drain to Gate voltage
R GS =20KΩ
55
V GS
ID
Gate to Source voltage
UNIT
V
±20
V GS =10V, T C =25°C
110
Continuous Drain Current (Note 1)
V GS =10V, T C =100°C
80
A
I DM
Pulsed Drain current(Note 2)
I AR
Avalanche current(Note 2)
62
E AR
Repetitive avalanche energy(Note 2 )
20
mJ
5
V /ns
200
W
1.3
W /°C
dv/dt
390
Peak diode recovery dv/dt(Note 3)
Total power dissipation
PD
TJ
T STG
TL
T C =25°C
Derating factor above 25 ° C
Operation junction temperature
-55 to 175
Storage temperature
-55 to 175
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
300
10 (1.1)
Note: 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75 A .
2 . Repetitive rating: pulse width limited by junction temperature.
3 . I SD ≤ 62 A, di/dt ≤ 207 A/µs, V DD ≤ V (BR)DSS , T J ≤ 175 °C.
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Page 1 of 7
ºC
lbf . in (N . m)
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IRF3205 Series
SEMICONDUCTOR
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Thermal resistance, case to heatsink
Rth(j-a)
Thermal resistance, junction to ambient
Min.
Typ.
UNIT
Max.
0.75
ºC/W
0.50
62
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
V(BR)DSS
▲V (BR)DSS/▲T J
I DSS
TEST CONDITIONS
PARAMETER
Drain to source breakdown voltage
V GS = 0V, I D = 250µA
Breakdown voltage temperature coefficient
I D = 1mA, referenced to 25°C
Drain to source leakage current
Min.
Typ.
Max.
55
V
V/ºC
0.057
V DS =55V, V GS =0V
T C = 25°C
25
V DS =44V, V GS =0V
T C =150°C
250
μA
Gate to source forward leakage current
V GS = 20V, V DS = 0V
100
Gate to source reverse leakage current
V GS = -20V, V DS = 0V
-100
R DS(ON)
Static drain to source on-state resistance
V GS = 10V, l D = 62A (Note 1)
V GS(TH)
Gate threshold voltage
V GS =V DS , I D =250μA
Forward transconductance
V DS =25V, I D =62A
I GSS
g fS
nA
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
Reverse transfer capacitance
t d(ON)
Turn-on delay time
tr
t d(OFF)
UNIT
Rise time
Turn-off delay time
tf
Fall time
LD
Internal drain inductance
LS
Internal source inductance
QG
Total gate charge
Q GS
Gate to source charge
Q GD
Gate to drain charge (Miller charge)
E AS
Single pulse avalanche energy(Note 2)
8.0
2
10
mΩ
4
V
44
S
3240
V DS = 25V, V GS = 0V, f =1MHz
pF
780
210
14
100
V DD = 28V, I D = 62A,R G = 4.5Ω,
V GS = 10V (Note 1)
ns
50
65
1.5
Between lead, 6mm from
package and center of die
nH
7.5
150
V DS = 44V, V GS = 10V, I D = 62A
35
nC
55
l AS = 62A, L= 138μH
1050
270
mJ
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
VSD
I s (Is D )
PARAMETER
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
V
Diode forward voltage
I SD = 62A, V GS = 0V
1.3
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
110
D (Drain)
I SM
Pulsed source current
G
(Gate)
390
A
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I SD = 62A, V GS = 0V,
dI F /dt = 100A/µs
t ON
Forward turn-on time
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note: 1. Pulse test: Pulse width ≤ 400μs, duty cycle ≤ 2% .
2. L=138μH, I AS ≤ 62A, R G =25Ω, T J ≤ 175° C
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Page 2 of 7
70
110
ns
145
220
nC
IRF3205 Series
SEMICONDUCTOR
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Nell High Power Products
ORDERING INFORMATION SCHEME
IRF
3205
A
MOSFET series
N-Channel, IR series
Current & Voltage rating, lD & VDS
110A / 55V
Package type
A = TO-220AB
H = TO-263 (D2PAK)
Fig.1 Typical output characteristics
10 3
10 2
10 1
Drain-to-Source Current,l D (A)
V GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
4.5V
20µs pulse width
T J =25°C
1
0.1
1
Drain-to-Source Current,l D (A)
4.5V
10 1
20µs pulse width
T J =175°C
1
10 2
10
Drain-to-Source voltage, V DS (V)
Drain-to-Source voltage, V DS (V)
Fig.3 Typical transfer characteristics
Fig.4 Normalized On-Resistance vs. Temperature
10 3
T J = 25°C
T J = 175°C
10 2
10 1
1
10 2
V GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
1
0.1
10 2
10
V DS =25V
20µs pulse width
6
4
8
10
12
Drain-to-Source on-resistance, R DS(on)
(Normalized)
Drain-to-Source Current,l D (A)
10 3
Fig.2 Typical output characteristics
Gate-to-Source voltage, V GS (V)
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2.5
l D =107A
2.0
1.5
1.0
0.5
V GS =10V
0
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
Junction Temperature,T J (°C)
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IRF3205 Series
SEMICONDUCTOR
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Nell High Power Products
Fig.6 Typical gate charge vs. Gate-to-Source
voltage
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
16
6000
4000
Gate-to-Source voltage,V GS (V)
5000
Capacitance,C (pF)
l D = 62A
V GS = 0V, f =1MHZ
C iss = C gs +C gd ( C ds = shorted )
C rss = C gd
C oss = C ds +C gd
Ciss
3000
2000
Coss
1000
Crss
14
12
V DS = 44V
V DS = 27V
V DS = 11V
10
8
6
4
2
0
0
10
1
0
100
20
60
80
100
120
Total gate charge, Q G (nC)
Drain-to-Source voltage, V DS (V)
Fig.8 Maximum safe operating area
Fig.7 Typical Source-Drain diode forward
voltage
10 4
10 3
Operation in This Area is Limited by R DS(ON)
T J = 17 5°C
10 2
Drain current, l D (A)
Reverse drain current, l SD (A)
40
10
T J = 25 °C
1
10 3
10µs
100µs
10 2
1ms
10ms
10
Note:
1. T C = 25°C
2. T J = 175°C
3. Single Pulse
V GS = 0V
1
0.1
0.2
0.8
2.0
1.4
2.6
10
1
Drain-to-Source voltage, V DS (V)
Source-to-Drain voltage, V SD (V)
Fig.9 Maximum drain current vs.
Case temperature
120
LIMITED BY PACKAGE
Drain Current, l D (A)
100
80
60
40
20
0
25
50
75
100
125
150
Case temperature, T C ( ° C)
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100
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175
1000
IRF3205 Series
SEMICONDUCTOR
RoHS
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Nell High Power Products
Fig.10 Maximum effective transient thermal lmpedance,
Junction-to-Case
Thermal response, Rth(j-c) (°C/W)
1
D = 0.5
0.2
0.1
0.1
PDM
0.05
Single pulse
(Thermal response)
0.02
0.01
t1
t2
Notes:
1. Duty factor, D = t1/ t2
2. Peak TJ = PDM * Rth(j-c) +TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration, t 1 (sec)
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
RD
V DS
V DS
90%
V GS
RG
D.U.T.
+
- V DD
10V
V GS
Pulse width ≤ 1µs
Duty Factor ≤ 0.1%
10%
t d(ON)
t d(OFF)
tR
Fig.12a. Unclamped lnductive test circuit
tF
Fig.12b. Unclamped lnductive waveforms
15V
BV DSS
l AS
L
V DS
DRIVER
l D(t)
V DS(t)
RG
D.U.T.
l AS
+
V
- DD
V DD
A
20V
tP
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Time
0.01Ω
tp
Page 5 of 7
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IRF3205 Series
SEMICONDUCTOR
Nell High Power Products
Single pulse avalanche energy, E AS (mJ)
Fig.12c. Maximum avalanche energy vs.
Drain current
500
lD
25A
44A
62A
TOP
400
BOTTOM
300
200
100
0
25
75
50
100
125
150
175
Junction temperature, T J (°C)
Fig.13a. Basic gate charge waveform
Fig.13b. Gate charge test circuit
Current Regulator
Same Type as D.U.T.
V GS
50KΩ
QG
0.2µF
12V
10V
0.3µF
+
Q GD
Q GS
-
D.U.T.
V DS
V GS
3mA
lG
Charge
lD
Current Sampling Resistors
Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET
D.U.T.
Driver Gate Drive
+
Circuit Layout Considerations
• Low Stray lnductance
• Ground Plane
• Low Leakage lnductance
Current Transformer
P.W.
D=
Period
P.W.
Period
VGS=10V
-
D.U.T. I SD Waveform
+
-
-
RG
Reverse
Recovery
Current
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
•
•
•
•
dv/dt controlled by R G
Driver same type as D.U.T.
l SD controlled by Duty Factor " D "
D.U.T. -Device Under Test
Re-Applied
Voltage
+
-
V DD
Diode Recovery
dv/dt
Body Diode
Forward Drop
Inductor Curent
Ripple ≤ 5%
*V GS = 5V for Logic Level Devices
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Page 6 of 7
VDD
ISD
*
IRF3205 Series
SEMICONDUCTOR
RoHS
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Nell High Power Products
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
3
4.06 (0.160)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
TO-263(D 2 PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
6.22 (0.245)
9.14 (0.360)
8.13 (0.320)
1.40 (0.055)
1.14 (0.045)
1.40 (0.055)
1.19 (0.047)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
5.20 (0.205)
4.95 (0.195)
D (Drain)
2.79 (0.110)
G
(Gate)
S (Source)
All dimensions in millimeters(inches)
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