Download BYV26 Ultra / Super Fast Soft–Recovery Avalanche Rectifier

BYV26
Vishay Telefunken
Ultra / Super Fast Soft–Recovery Avalanche Rectifier
Features
D
D
D
D
D
Glass passivated junction
Hermetically sealed package
Very low switching losses
Low reverse current
High reverse voltage
94 9539
Applications
Switched mode power supplies
High–frequency inverter circuits
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Reverse voltage=
voltage
Repetitive
Re
etitive peak
eak reverse voltage
Peak forward surge current
Average forward current
Non repetitive reverse
avalanche energy
Junction and storage
temperature range
tp=10ms, half sinewave
I(BR)R=1A, inductive load
Type
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
Symbol
Unit
IFSM
IFAV
Value
200
400
600
800
1000
30
1
ER
10
mJ
Tj=Tstg
–55...+175
°C
VR=
VRRM
V
A
A
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Document Number 86040
Rev. 3, 11-Aug-00
Test Conditions
l=10mm, TL=constant
Symbol
RthJA
Value
45
Unit
K/W
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1 (4)
BYV26
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
IF=1A
IF=1A, Tj=175°C
VR=VRRM
VR=VRRM, Tj=150°C
Forward voltage
Reverse current
Reverse breakdown
voltage
IR=100mA
Reverse recovery time
IF=0.5A,
=0 5A IR=1A,
=1A iR=0.25A
=0 25A
Type
Symbol
Min
Typ
Max
2.5
1.3
5
100
VF
IR
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26A–
BYV26C
BYV26D–
BYV26E
300
500
700
900
1100
V(BR)R
Unit
V
mA
V
30
trr
ns
75
1000
600
VR = VR RM
500
RthJA=45K/W
200V
400
RthJA=100K/W
400V
300
600V
200
800V
I R – Reverse Current ( mA )
PR – Maximum Reverse Power Dissipation ( mW )
Characteristics (Tj = 25_C unless otherwise specified)
100
10
1
100
VR = VR RM
1000V
0
0.1
0
95 9728
40
80
120
160
200
Tj – Junction Temperature ( °C )
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
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2 (4)
0
95 9729
40
80
120
160
200
Tj – Junction Temperature ( °C )
Figure 2. Max. Reverse Current vs. Junction Temperature
Document Number 86040
Rev. 3, 11-Aug-00
BYV26
Vishay Telefunken
I FAV– Average Forward Current ( A )
1.2
40
CD – Diode Capacitance ( pF )
1.0
RthJA=45K/W
0.8
0.6
0.4
RthJA=100K/W
0.2
0
40
80
120
160
200
Tamb – Ambient Temperature ( °C )
95 9730
20
15
10
5
1.0
10.0
100.0
VR – Reverse Voltage ( V )
Figure 5. Diode Capacitance vs. Reverse Voltage
10
40
CD – Diode Capacitance ( pF )
Tj = 175°C
I F – Forward Current ( A )
BYV26C
25
16380
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
1
Tj = 25°C
0.1
0.01
0.001
0
95 9731
30
0
0.1
0
f=1MHz
35
1
2
3
4
5
6
30
VF – Forward Voltage ( V )
20
15
10
5
1.0
10.0
100.0
VR – Reverse Voltage ( V )
16381
Figure 4. Max. Forward Current vs. Forward Voltage
BYV26E
25
0
0.1
7
f=1MHz
35
Figure 6. Diode Capacitance vs. Reverse Voltage
Dimensions in mm
∅ 3.6 max.
Sintered Glass Case
SOD 57
Weight max. 0.5 g
26 min.
Document Number 86040
Rev. 3, 11-Aug-00
Cathode Identification
4.2 max.
94 9538
technical drawings
according to DIN
specifications
∅ 0.82 max.
26 min.
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BYV26
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.com
4 (4)
Document Number 86040
Rev. 3, 11-Aug-00