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IRF3205 HEXFET ® Power MOSFET z Advanced Process Technology VDSS=55V z Ultra Low On-Resistance RDS(on)=8.0mΩ z Dynamic dv/dt Rating ID=110A z 175℃ Operating Temperature z Fast Switching z Fully Avalanche Rated ⑤ Description Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 packages is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID@TC=25℃ Continuous Drain Current, VGS @ 10V 110⑤ A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 80 IDM Pulsed Drain Current ① 390 PD @ Tc=25℃ Power Dissipation 200 W Linear Derating Factor 1.3 W/℃ VGS Gate-to-Source Voltage ±20 V IAR Avalanche Current ① 62 A EAR Repetitive Avalanche Energy ① 20 mJ dv/dt Peak Diode Recovery dv/dt ③ 5.0 V/ns TJ Operating Junction and -55 to +175 ℃ TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 srew 10 Ibf•in (1.1 N•m) Thermal Resistance Parameter Typ. Max. Units RӨJC Junction-to-Case - 0.75 ℃/W RӨCS Case-to-Sink, Flat, Greased Surface 0.50 - RӨJA Junction-to-Ambient - 62 www.artschip.com 1 IRF3205 HEXFET ® Power MOSFET Electrical Characteristics @ TJ=25℃ (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Min. 55 2.0 44 - Typ. 0.057 14 -101 50 65 4.5 Max. 8.0 4.0 25 250 100 -100 146 35 54 - Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-On Delay Time Fall Time Internal Drain Inductance LS Internal Source Inductance - 7.5 - Ciss Coss Crss EAS Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy ② - 3247 781 211 1050⑥ 264⑦ Units V V/℃ mΩ V S µA nA nC ns nH Conditions VGS=0V, ID=250µA Reference to 25℃, ID=1mA VGS=10V, ID=62A ④ VDS=VGS, ID=250µA VDS=25V, ID=62A ④ VDS=55V, VGS=0V VDS=44V, VGS=0V, TJ=150℃ VGS=20V VGS=-20V ID=62A VDS=44V VGS=10V, See Fig.6 and 13 VDD=28V ID=62A RG=4.5 Ω VGS=10V, See Fig.10④ Between lead, 6mm (0.25in.) From package And center of die contact pF VGS=0V VDS=25V f=1.0MHz, See Fig.5 mJ IAS=62A, L=138µH Source-Drain Ratings and Characteristics IS Parameter Min. Typ. Max. Units Continuous Source Current - - 110 A (Body Diode) ISM Pulsed Source Current Conditions MOSFET symbol showing - - integral 390 the reverse p-n junction diode. (Body Diode) ① VDS Diode Forward Voltage - - 1.3 V TJ=25℃, IS=62A, VGS=0V④ trr Reverse Recovery Time - 69 104 ns TJ=25℃, IF=62A Qrr Reverse Recovery Charge - 143 215 nC di/dt=100A/µS④ ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: ①Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) ②Starting TJ=25℃, L=138µH, RG=25Ω, IAS=62A. (See fig. 12) ③ISD≤62A, di/dt≤207A/µs, VDD ≤V(BR)DSS, TJ≤175℃ ④ Pulse width ≤400µs; duty cycle ≤2%. ⑤ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ⑥This is a typical value at device destruction and represents operation outside rated limits. ⑦This is a calculated value limited to TJ=175℃. www.artschip.com 2 IRF3205 HEXFET ® Power MOSFET Fig 1. Typical Output Characteristics Fig2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage www.artschip.com 3 IRF3205 HEXFET ® Power MOSFET Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage Fig 10a. Switching Time Test Circuit Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.artschip.com 4 IRF3205 HEXFET ® Power MOSFET Fig 12a. Unclamped Inductive Test Circuit Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform www.artschip.com 5 IRF3205 HEXFET ® Power MOSFET Peak Diode Recovery dv/dt Test Circuit Fig 14. For N-Channel HEXFETs www.artschip.com 6 IRF3205 HEXFET ® Power MOSFET Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) www.artschip.com 7