Download IRF3205 HEXFET ® Power MOSFET

IRF3205
HEXFET ® Power MOSFET
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Advanced Process Technology
VDSS=55V
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Ultra Low On-Resistance
RDS(on)=8.0mΩ
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Dynamic dv/dt Rating
ID=110A
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175℃ Operating Temperature
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Fast Switching
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Fully Avalanche Rated
⑤
Description
Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 packages is universally preferred for all commercial-industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
Absolute Maximum Ratings
Parameter
Max.
Units
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
110⑤
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
80
IDM
Pulsed Drain Current ①
390
PD @ Tc=25℃
Power Dissipation
200
W
Linear Derating Factor
1.3
W/℃
VGS
Gate-to-Source Voltage
±20
V
IAR
Avalanche Current ①
62
A
EAR
Repetitive Avalanche Energy ①
20
mJ
dv/dt
Peak Diode Recovery dv/dt ③
5.0
V/ns
TJ
Operating Junction and
-55 to +175
℃
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 srew
10 Ibf•in (1.1 N•m)
Thermal Resistance
Parameter
Typ.
Max.
Units
RӨJC
Junction-to-Case
-
0.75
℃/W
RӨCS
Case-to-Sink, Flat, Greased Surface
0.50
-
RӨJA
Junction-to-Ambient
-
62
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IRF3205
HEXFET ® Power MOSFET
Electrical Characteristics @ TJ=25℃ (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Min.
55
2.0
44
-
Typ.
0.057
14
-101
50
65
4.5
Max.
8.0
4.0
25
250
100
-100
146
35
54
-
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-On Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
-
7.5
-
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy ②
-
3247
781
211
1050⑥
264⑦
Units
V
V/℃
mΩ
V
S
µA
nA
nC
ns
nH
Conditions
VGS=0V, ID=250µA
Reference to 25℃, ID=1mA
VGS=10V, ID=62A ④
VDS=VGS, ID=250µA
VDS=25V, ID=62A ④
VDS=55V, VGS=0V
VDS=44V, VGS=0V, TJ=150℃
VGS=20V
VGS=-20V
ID=62A
VDS=44V
VGS=10V, See Fig.6 and 13
VDD=28V
ID=62A
RG=4.5 Ω
VGS=10V, See Fig.10④
Between lead,
6mm (0.25in.)
From package
And center of
die contact
pF
VGS=0V
VDS=25V
f=1.0MHz, See Fig.5
mJ
IAS=62A, L=138µH
Source-Drain Ratings and Characteristics
IS
Parameter
Min.
Typ.
Max.
Units
Continuous Source Current
-
-
110
A
(Body Diode)
ISM
Pulsed Source Current
Conditions
MOSFET symbol
showing
-
-
integral
390
the
reverse
p-n junction diode.
(Body Diode) ①
VDS
Diode Forward Voltage
-
-
1.3
V
TJ=25℃, IS=62A, VGS=0V④
trr
Reverse Recovery Time
-
69
104
ns
TJ=25℃, IF=62A
Qrr
Reverse Recovery Charge
-
143
215
nC
di/dt=100A/µS④
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
①Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
②Starting TJ=25℃, L=138µH, RG=25Ω, IAS=62A. (See fig. 12)
③ISD≤62A, di/dt≤207A/µs, VDD ≤V(BR)DSS, TJ≤175℃
④ Pulse width ≤400µs; duty cycle ≤2%.
⑤ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
⑥This is a typical value at device destruction and represents operation outside rated limits.
⑦This is a calculated value limited to TJ=175℃.
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IRF3205
HEXFET ® Power MOSFET
Fig 1. Typical Output Characteristics
Fig2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
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IRF3205
HEXFET ® Power MOSFET
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
Fig 10a. Switching Time Test Circuit
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF3205
HEXFET ® Power MOSFET
Fig 12a. Unclamped Inductive Test Circuit
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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IRF3205
HEXFET ® Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
Fig 14. For N-Channel HEXFETs
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IRF3205
HEXFET ® Power MOSFET
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
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