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Sample Final Exam
CMPEN 411
Name: ___________________________________
Student ID number (last 4 digits): ______________
This is an OPEN BOOK and CLOSED NOTE exam.


Please write your name on every page and show all your work.
Write your solution clearly. You may use backside of each page for scratch but the
solutions must be shown on the designated place near (below) each problem.
 For each problem, assume the minimum size transistors of the 0.5um CMOS process
available through MOSIS (n−type: Vt=0.9V, k’=50uA/V**2) (p−type: Vt=−0.9V,
k’=−17uA/V**2), L=0.6um, W=0.9um.
 When drawing a transistor circuit diagram, one may use AND, OR, INV, NAND, NOR, XOR
logic gate symbols assuming they are the static CMOS gates.
 Please ask if any of the problems (and assumptions) is not clear.
________________________________________________________________
1. Given a logic implementation and an input signal shown below, show a logic simulation
output of the circuit assuming each NAND gate has delay of 1.0 nsec.
2. Determine the voltages Va, Vb, and Vc of the following circuit. Assume the initial condition
Va=Vb=Vc=0V.
3. Assuming the design rule for NCSU_Tech_ami06 0.5um CMOS technology, what are the
smallest size:
(a) Fill-in the table below:
Poly wire width
Transistor channel length
Transistor channel width
N diffusion width
Metal 1 width
Metal 3 width
um
um
um
um
um
um
(b) List two factors that ultimately limit the smallest feature size in VLSI technology:
4. Calculate the drain current and the equivalent resistance of the following minimum size
transistor (L=0.6um, W=0.9um drawn) circuits.
5. Size the transistors in the following circuit to reduce the worst case delay. Make the fall &
rise time equal to each other and comparable to the fall time of an inverter with minimum
size NMOS transistor. Show transistor size in width/length (W/L), in scalable unit ratio (or
lambda), next to each transistor. Assume the minimum size N:P ratio of 1:3
6. Shown at the right is the voltage transfer
curve (DC characteristic curve) of a 2-input
NAND gate with minimum size transistors.
Determine the following parameters and
noise margins:
Vin-low
___________volt
Vin-high
___________volt
Vout-low
___________volt
Vout-high
___________volt
NMlow
___________volt
NMhigh
___________volt
7. Sketch the Hspice output waveforms of OUT1, OUT2, and OUT3 for the given input IN
shown below. You may approximate the time scale, but be sure to show differences
among OUT1, OUT2, and OUT3 timing. Assume each transistor channel width as
indicated, and assume all transistor channel length the same.
(a) Sketch the timing
(b) Sketch the VTC curves for the above inverters and label each one: OUT1, OUT2,
and OUT3.
8. Consider the logic function F= AB+C(A+B). Give the transistor circuit diagram of a single
static CMOS gate that implements the function F. Full credit given to the design with fewest
transistors. Available input signals are: A, B, and C.
Total transistor count: ________________
9. We are using Cadence Virtuoso CAD tool. What are the tasks that the chip designer can
accomplish with the tool? List at least 5 tasks that are essential for a chip design.
10. What are the two cost categories that adds up to the chip cost? List 7 major cost factors
for a chip.
11. List three items which a circuit and layout design engineer can do to lower the cost of
his/her chip.
12. What is Moore’s Law? State the Law in a few sentence. Can you say the same for the
chip speed? Why or why not? Can you say the same for the chip power dissipation? Why
or why not?
13. What are the three main limiting factors for Moore’s Law to continue for next 10 years?
14. Shown below is the non-inverting buffer circuit. Draw the voltage transfer curve (DC
characteristic curve). Then determine the following parameters and noise margins:
Vin-low
_______ V
Vin-high
_______ V
Vout-low _______ V
Vout-high _______ V
NM-low
NM-high
_______ V
_______ V
15. Calculate the drain current (Id), the output voltage (Vout), and the equivalent resistance
(Requ) of the transistor (drain to source) of the following minimum size transistor circuits.
Show your work.
(a)
Vdd
= 5V
Vin
= 0.5V
Id
= _________ mA
Vout = _________ V
Requ = _________ ohm
(b)
Vdd
= 5V
Vin
= 5V
Id
= _________ mA
Vout = _________ V
Requ = _________ ohm
16. List 5 different ways to reduce leakage power.
17. List 5 different ways to reduce short-circuit power.
18. List 5 different ways to reduce dynamic power.
19. List 3 potential problems due to the charge sharing.
20. Do the following charge sharing calculation: Calculate the final output voltage of the two
capacitors in parallel, 5pF and 2pF. The 2pF capacitor was initially charged to 5V and the
5pF capacitor was initially charged to 0V. Is the result become problem? Why or why not?
21. Understanding how the clock feed-through occurs, list 3 different ways to reduce clock
feed-through.
22. Write a simplest Boolean expression of the following CMOS logic circuit. Also draw an
equivalent logic diagram using digital gate symbol(s).
Z = ____________________________________________
23. List a unique advantage of an np-CMOS logic circuit.
24. For static CMOS logic style, can we build 2 input AND gate with 2 NMOS transistors and 2
PMOS transistors? Why or why not?
25. For the Homework 2, you have designed an 8-bit ripple carry adder circuit and simulated
the circuit with Hspice to determine the worst case delay. The worst case add time was
2.5ns with Vdd=5.0V. If you set Vdd=3.3V and re-simulate (Hspice) the same circuit, what
will be the worst case add time?
26. Your course project chip designed with AMI 0.6um CMOS has been fabricated and tested
with 5V power. The maximum clock frequency of 100MHz was observed while the chip
was fully functioning. Also the power dissipation of 200mW was observed. Please answer
the following questions:
(a) Without the pad, your project core is 0.9mm by 0.9mm. The same layout design is
scaled and fabricated with AMI 0.3um CMOS technology. What is the actual die size of
your project core?
(b) For the same layout design fabricated with AMI 0.3um CMOS technology, what would
you expect the maximum clock frequency to be?
(c) For the same layout design fabricated with AMI 0.3um CMOS technology, what would
you expect the power dissipation at the maximum clock frequency?
(d) To fabricate the same layout design in AMI 0.6um CMOS technology and AMI 0.3um
CMOS technology with scaling, which one is more expensive? Why?
27. Consider the following three power consumption components of CMOS circuit:
(1) Direct−path current (short circuit dissipation)
(2) Static consumption
(3) Dynamic consumption
Which component(s) is (are) independent of the signal switching activity? ______ ______
Which component(s) is (are) independent of the signal rise & fall time? ______ ______
Which component(s) is (are) dependent on the signal rise & fall time? ______ ______
Which component(s) is (are) independent of the load capacitance? ______ ______
Which component(s) is (are) independent of the transistor size? ______ ______
28. Consider the following four implementations of a 64 bit adder.
(A) Ripple carry adder
(B) Pipelined ripple carry adder
(C) Carry Lookahead adder
(D) Bit serial adder
Which implementations (choose two) are more suitable for
high speed chip? __________ __________
small size chip? __________ __________
less power consuming chip? __________ __________
cheaply produced chip? __________ __________
Which implementation is most difficult to design? __________
Which implementation is most difficult to use? __________
29. List four clear advantages of SRAM over DRAM:
(1)
(2)
(3)
(4)
30. List four clear disadvantages of SRAM over DRAM:
(1)
(2)
(3)
(4)
31. List the following multipliers in order of its multiply time (time it takes to multiply two
numbers). Two numbers are 128 bit each, unsigned binary numbers. Start the list with the
fastest multiplier first.
Booth Multiplier, Wallace-Tree Multiplier, Carry-Save Multiplier, Array Multiplier, 4-to-2
Compressor Multiplier.
(1)
(2)
(3)
(4)
(5)
32. Tri-state non-inverting output driver is shown below. Draw the optimized logic circuit for
the control logic box shown below.
Tri-state non-inverting output driver
Tri-state non-inverting output driver
Gp = __________________________
Gn = __________________________
33. List five ways to make the class project, the 8 bit RISC microcontroller, run faster: