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Transcript
MSE SEMINAR February 20, 2009 113 McBryde Hall 3:30 – 4:30 Refreshments at 3:00 Dr. Jean J. Heremans Department of Physics Virginia Tech “Spin and Quantum-coherent Electron Transport in Semiconductors” ABSTRACT Spin-dependent electronic properties in semiconductor structures may be utilized toward the design of novel spintronics implementations, and also form a starting point to explore captivating physical phenomena. In particular, spin-orbit interaction in semiconductor heterostructures and thin films can lead to spin-dependent electron transport effects, without the presence of magnetic materials. At mesoscopic dimensions, on length scales shorter than the electron mean free path, the effects of spin-orbit interaction are not averaged out over the geometry. Spin-orbit interaction then results in observable electronic properties, which lead to interesting device properties as well as intriguing physics. We pattern mesoscopic geometries on InSb/InAlSb and InAs/AlGaSb or InAs/GaSb heterostructures, where spin-orbit interaction is strong. We experimentally demonstrate ballistic and quantum-coherent spin-dependent phenomena, such as spin-split ballistic transport using specialized transverse magnetic focusing geometries, the creation of fully spin-polarized electron beams using spin-dependent reflection, and quantummechanical interference effects using mesoscopic ring arrays. The spin degree of freedom sometimes results in surprising effects on quantum-mechanical particle interference phenomena, through the Aharonov-Bohm phase and its less-explored electromagnetic dual, the Aharonov-Casher phase. Further, we investigate the spin coherence times in InSb thin films by anti-localization magnetoresistance measurements. Anti-localization is a consequence of particle interference under spin-orbit interaction, and carries information about both the spin and the phase coherence times of electrons. Measurements show that in InSb the spin coherence time can reach 70 ps at low temperatures, and that Elliott-Yafet momentum scattering here dominates spin decoherence. BIOSKETCH Dr. Jean Heremans is an associate professor in the Department of Physics at Virginia Tech. Dr. Heremans received a B.S. and M.S. in Applied Sciences at the University of Leuven (Belgium), and his Ph.D. in 1994 from Princeton University. He was a postdoctoral fellow at the National High Magnetic Field Laboratory and Florida State University in Tallahassee, FL, and worked at the semiconductor company Emcore as research scientist. Subsequently he joined Ohio University as assistant professor and then associate professor and Director of the Nanoscale and Quantum Phenomena Institute at Ohio University. He moved to Virginia Tech in 2005. Dr. Heremans’ current research interests include phenomena in condensed matter at high magnetic fields and low temperatures, quantum transport and spindependent phenomena, nanoscale semiconductor structures, magnetic phenomena in reduced dimensions, organic semiconductors and molecular electronics.