Download 1. Symposium Title:

MRS 2012 Spring Meeting
April 9-13, 2012
San Francisco, CA
Reliability and Materials Issues of Semiconductor Optical and
Electrical Devices & Materials
Scope and Focus:
Achieving high reliability is a key issue for semiconductor optical and electrical devices
and is as important as device performance for commercial application. Degradation of
both optical and electrical devices is strongly related to the materials issues. A variety
of material defects can occur during the device fabrication processes, i.e., crystal
growth, impurity diffusion, ion-implantation, wet/dry etching, metallization, bonding,
packaging, etc. This symposium focuses on the current status of reliability and
degradation of various semiconductor optical and electrical devices as well as their
materials issues in thin film growth, wafer processing, and device fabrication processes.
Topics to be addressed include (but are not limited to) the following:











Defects in semiconductor thin film growth: III-V, II-VI, III-V Nitrides, SiC etc.
Defects in wafer processing and device fabrication processes
Recombination-enhanced defect reaction and related phenomena
Reliability and degradation of LDs and LEDs: III-V's, II-VI’s, InGaN/GaN,
and SiC
Reliability and degradation of high-power lasers
Reliability and degradation of VCSELs: AlGaAs/GaAs, InGaAs/GaAs,
GaInNAs/GaAs, …
Reliability of nanostructure devices: QD lasers, …
Reliability of GaAs, InP, SiC and GaN transistors and circuits
Reliability of metal-semiconductor contacts
Strain contribution to the device degradation
Failure analyses: optical (PL/CL, SNOM, …), electrical (EBIC, SPM, …),
and structural (HREM, HAADF/STEM, 3D atom probe, …)
Partial list of suggested invited speakers:
Koji Maeda (Univ. of Tokyo, Japan): Recombination-enhanced dislocation glide
S.N. George Chu (Multiplex Inc., USA): Degradation of long wavelength LDs
Urlich M. Goesele (Max Plank Institute, Germany): Point defect diffusion in III-V’s
Shigetaka Tomiya (Sony, Japan): Reliability of InGaN LDs
Wayne Johnson (Nitronex, USA): Reliability of GaN on Si FETs
Kurt Smith (Raytheon, USA): Reliability of GaN on SiC FETs
Mike Fresina (RFMD, USA): Reliability of commercial III-V electronic devices
Kitt Reinhardt (AFOSR, USA): Requirements for military electronics reliability
David T. Mathes (Advanced Optical Components, USA): Reliability of VCSELs
C. J. Humphreys (Univ. of Cambridge, UK): 3D Atom probe of InGaN
Brent Gila (Univ.Florida, USA): Passivation of GaN Surfaces for FETs
Samuel Graham(Georgia Tech):Temperature meaurements in III-V devices
Y. Fukai (NTT): Reliability of InP HBTs
T. Takeshita (NTT): Failure analysis by an optical evaluation technique (OBIC) of LDs
for fiber optical communication
Symposium Organizers
Lead Organizer (Point of contact)
Osamu Ueda
Kanazawa Institute of Technology, Graduate School of Engineering,
1-3-4 Atago, Minato-ku, Tokyo, 105-0002, Japan
Phone 81-3-5777-2227
Fax: 81-3-5777-2226
Email: [email protected]
Co-Organizers: (at least two)
Mitsuo Fukuda
Toyohashi University of Technology, Department of
Electrical and Electronic Engineering
1-1, Hibarigaoka, Tempakucho, Toyohashi, Aichi, 441-8580, Japan
Phone 81-0532-44-6729
Fax: 81-532-44-6729
Email: [email protected]
Steve Pearton
University of Florida, Dept. of Materials Science & Engineering
Gainesville, FL 32611-6400
Phone 352-846-1181
Fax: 352-846-1182
Email: [email protected]
Edwin Piner
Nitronex Corporation
2305 Presidential Drive
Durham, NC 27703
Phone : 919-807-9100
Fax: 919-807-9200
Email:[email protected]
2