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MRS 2012 Spring Meeting April 9-13, 2012 San Francisco, CA Reliability and Materials Issues of Semiconductor Optical and Electrical Devices & Materials Scope and Focus: Achieving high reliability is a key issue for semiconductor optical and electrical devices and is as important as device performance for commercial application. Degradation of both optical and electrical devices is strongly related to the materials issues. A variety of material defects can occur during the device fabrication processes, i.e., crystal growth, impurity diffusion, ion-implantation, wet/dry etching, metallization, bonding, packaging, etc. This symposium focuses on the current status of reliability and degradation of various semiconductor optical and electrical devices as well as their materials issues in thin film growth, wafer processing, and device fabrication processes. Topics to be addressed include (but are not limited to) the following: Defects in semiconductor thin film growth: III-V, II-VI, III-V Nitrides, SiC etc. Defects in wafer processing and device fabrication processes Recombination-enhanced defect reaction and related phenomena Reliability and degradation of LDs and LEDs: III-V's, II-VI’s, InGaN/GaN, and SiC Reliability and degradation of high-power lasers Reliability and degradation of VCSELs: AlGaAs/GaAs, InGaAs/GaAs, GaInNAs/GaAs, … Reliability of nanostructure devices: QD lasers, … Reliability of GaAs, InP, SiC and GaN transistors and circuits Reliability of metal-semiconductor contacts Strain contribution to the device degradation Failure analyses: optical (PL/CL, SNOM, …), electrical (EBIC, SPM, …), and structural (HREM, HAADF/STEM, 3D atom probe, …) Partial list of suggested invited speakers: Koji Maeda (Univ. of Tokyo, Japan): Recombination-enhanced dislocation glide S.N. George Chu (Multiplex Inc., USA): Degradation of long wavelength LDs Urlich M. Goesele (Max Plank Institute, Germany): Point defect diffusion in III-V’s Shigetaka Tomiya (Sony, Japan): Reliability of InGaN LDs Wayne Johnson (Nitronex, USA): Reliability of GaN on Si FETs Kurt Smith (Raytheon, USA): Reliability of GaN on SiC FETs Mike Fresina (RFMD, USA): Reliability of commercial III-V electronic devices Kitt Reinhardt (AFOSR, USA): Requirements for military electronics reliability David T. Mathes (Advanced Optical Components, USA): Reliability of VCSELs C. J. Humphreys (Univ. of Cambridge, UK): 3D Atom probe of InGaN Brent Gila (Univ.Florida, USA): Passivation of GaN Surfaces for FETs Samuel Graham(Georgia Tech):Temperature meaurements in III-V devices Y. Fukai (NTT): Reliability of InP HBTs T. Takeshita (NTT): Failure analysis by an optical evaluation technique (OBIC) of LDs for fiber optical communication Symposium Organizers Lead Organizer (Point of contact) Osamu Ueda Kanazawa Institute of Technology, Graduate School of Engineering, 1-3-4 Atago, Minato-ku, Tokyo, 105-0002, Japan Phone 81-3-5777-2227 Fax: 81-3-5777-2226 Email: [email protected] Co-Organizers: (at least two) Mitsuo Fukuda Toyohashi University of Technology, Department of Electrical and Electronic Engineering 1-1, Hibarigaoka, Tempakucho, Toyohashi, Aichi, 441-8580, Japan Phone 81-0532-44-6729 Fax: 81-532-44-6729 Email: [email protected] Steve Pearton University of Florida, Dept. of Materials Science & Engineering Gainesville, FL 32611-6400 Phone 352-846-1181 Fax: 352-846-1182 Email: [email protected] Edwin Piner Nitronex Corporation 2305 Presidential Drive Durham, NC 27703 Phone : 919-807-9100 Fax: 919-807-9200 Email:[email protected] 2