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Quad SPST CMOS Analog Switches
DG441/442
Vishay Siliconix
DESCRIPTION
The DG441/442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio
signals. The DG441 has a normally closed function. The DG442 has a normally open function. Combining low on-resistance (50
Ω, typ.) with high speed (tON 150 ns, typ.), the DG441/442 are ideally suited for
upgrading DG201A/202 sockets. Charge injection has been
minimized on the drain for use in sample-and-hold circuits.
To achieve high voltage ratings and superior switching performance, the DG441/442 are built on Vishay Siliconix’s high-voltage
silicon-gate process. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off.
FEATURES
•
•
•
•
•
•
•
•
Low On-Resistance: 50 Ω
Low Leakage: 80 pA
Low Power Consumption: 0.2 mW
Fast Switching Action-tON: 150 ns
Low Charge Injection-Q: - 1 pC
DG201A/DG202 Upgrades
TTL/CMOS-Compatible Logic
Single Supply Capability
BENEFITS
•
•
•
•
•
•
•
Less Signal Errors and Distortion
Reduced Power Supply Requirements
Faster Throughput
Improved Reliability
Reduced Pedestal Errors
Simplifies Retrofit
Simple Interfacing
APPLICATIONS
•
•
•
•
•
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•
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Audio Switching
Battery Powered Systems
Data Acquisition
Hi-Rel Systems
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Medical Instruments
Pb-free
Available
RoHS*
COMPLIANT
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
16
IN2
IN1
1
D1
2
S1
3
15
D2
14
S2
Key
D1
3
S1
4
V-
5
18
S2
17
V+
IN1
2
NC
1
IN2
20
D2
19
V- GND
S4
D4
13
V+
12
NC
6
11
S3
7
10
D3
4
Dual-In-Line and SOIC
DG441
5
Top View
NC GND S4
LCC
6
DG441
7
Top View
8
9
10
16
NC
15
NC
14
S3
11
IN4
9
IN3
D4
IN4
NC
IN3
12
13
8
D3
TRUTH TABLE
Logic
0
1
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
DG441
ON
OFF
DG442
OFF
ON
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
www.vishay.com
1
DG441/442
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
Part Number
DG441DJ
DG441DJ-E3
16-Pin Plastic DIP
DG442DJ
DG442DJ-E3
DG441DY
DG441DY-E3
DG441DY-T1
DG441DY-T1-E3
- 40 to 85 °C
16-Pin Narrow SOIC
DG442DY
DG442DY-E3
DG442DY-T1
DG442DY-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter
V+ to VGND to V-
Limit
44
25
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
30
Digital Inputsa, VS, VD
Continuous Current (Any Terminal)
Current, S or D (Pulsed at 1 ms, 10 % duty cycle)
(AK Suffix)
Storage Temperature
(DJ, DY Suffix)
Power Dissipation (Package)b
Unit
V
mA
100
- 65 to 150
- 65 to 125
16-Pin Plastic DIPc
16-Pin CerDIPd
16-Pin Narrow SOICd
450
900
900
LCC-20d
1200
°C
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/°C above 75 °C. d.
Derate 12 mW/°C above 75 °C.
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
5 V Reg
INX
V- Level
Shift/ Drive
V+
GND
V-
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Figure 1.
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
DG441/442
Vishay Siliconix
DS(on)
SPECIFICATIONSa FOR DUAL SUPPLIES
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
Parameter
Analog Switch
Symbol
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
rDS(on)
On-Resistance Match Between
Channelse
Δr
IS(off)
Switch Off Leakage Current
ID(off)
Channel On Leakage Current
ID(on)
VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Full
IS = - 10 mA, VD = ± 8.5 V
V+ = 13.5 V, V- = - 13.5 V
IS = - 10 mA, VD = ± 10 V
V+ = 15 V, V– = - 15 V
V+ = 16.5, V- = - 16.5 V
VD = ± 15.5 V, VS = ± 15.5 V
V+ = 16.5 V, V- = - 16.5 V
VS = VD = ± 15.5 V
Room
Full
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Maxd
Mind
Maxd
Unit
- 15
15
- 15
15
V
50
Room
Full
85
100
85
100
4
5
4
5
Room
Full
± 0.01
- 0.5
- 20
0.5
20
- 0.5
-5
0.5
5
Room
Full
± 0.01
- 0.5
- 20
0.5
20
- 0.5
-5
0.5
5
Room
Full
± 0.08
- 0.5
- 40
0.5
40
- 0.5
- 10
0.5
10
Full
- 0.01
- 500
500
- 500
500
Full
0.01
- 500
500
- 500
500
Room
150
250
250
Room
Room
90
110
120
210
120
210
Room
-1
Ω
nA
Digital Control
Input Current VIN Low
IIL
Input Current VIN High
IIH
Dynamic Characteristics
Turn-On Time
tON
DG441
DG442
Turn-Off Time
Charge Injectione
Q
Off Isolatione
Crosstalke (Channel-to-Channel)
Source Off Capacitancee
Drain Off
CD(off)
e
Channel On Capacitance
Power Supplies
Positive Supply Current
Ground Current
OIRR
XTALK
CS(off)
Capacitancee
Negative Supply Current
t
CD(on)
VIN under test = 0.8 V,
All Other = 2.4 V
VIN under test = 2.4 V
All Other = 0.8 V
RL = 1 kΩ, CL = 35 pF
VS = ± 10 V
See Figure 2
CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 Ω
RL = 50 Ω, CL = 5 pF
f = 1 MHz
Room
60
Room
100
Room
4
Room
4
VANALOG = 0 V
Room
16
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 or 5 V
Full
Room
Full
Full
15
- 0.0001
f = 1 MHz
I+
IIGND
OFF
nA
- 15
ns
pC
dB
pF
100
-1
-5
- 100
100
-1
-5
- 100
µA
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
www.vishay.com
3
DG441/442
Vishay Siliconix
SPECIFICATIONSa FOR SINGLE SUPPLY
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
Parameter
Analog Switch
Symbol
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
rDS(on)
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injection
Q
Power Supplies
Positive Supply Current
I+
Negative Supply Current
Ground Current
IIGND
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Maxd
Mind
12
0
VIN = 2.4 V, 0.8 Vf
Tempb
IS = - 10 mA, VD = 3 V, 8 V
V+ = 10.8 V
Room
Full
100
160
200
RL = 1 kΩ, CL = 35 pF
VS = 8 V See
Figure 2
CL = 1nF, Vgen = 6 V, Rgen = 0 Ω
Room
300
450
450
Room
60
200
200
Room
2
Full
Room
Full
Full
15
- 0.0001
Typc
Full
V+ = 13.2 V, V- = 0 V
VIN = 0 or 5 V
0
- 15
Maxd
Unit
12
V
160
200
Ω
ns
pC
100
-1
- 100
- 100
100
-1
- 100
- 100
µA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70053
S-71241–Rev. I, 25-Jun-07
DG441/442
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
r DS(on) – Drain-Source On-Resistance (Ω)
80
70
± 5V
r DS(on) – Drain-Source On-Resistance (Ω)
V+ = 15 V
V- = - 15 V
80
60
60
± 8V
50
± 10 V
40
± 12 V
40
± 15 V
30
125 °C
85 °C
25 °C
20
0
- 20
- 15
- 10
-5
± 20 V
0
5
10
15
20
20
10
0
- 15
0 °C
- 40 °C
- 10
- 5
0
- 55 °C
5
10
15
r DS(on) – Drain-Source On-Resistance (Ω)
300
250
200
VD – Drain Voltage (V)
rDS(on) vs. VD and Power Supply Voltage
V- = 0 V
V+ = 5 V
140
r DS(on) – Drain-Source On-Resistance (Ω)
120
100
VD – Drain Voltage (V)
rDS(on) vs. VD and Temperature
125 °C
85 °C
150
100
50
8V
10 V
12 V
15 V
80
60
40
0 °C
25 °C
- 55 °C
0
0
4
20 V
20
20
0
0
- 40 °C
2
4
8
12
16
6
V+ = 12 V V- = 0 V
8
10
12
VD − Drain Voltage (V) rDS(on) vs. VD and Unipolar Power Supply Voltage
VD – Drain Voltage (V)
rDS(on) vs. VD and Temperature
(Single 12-V Supply)
140
120
(–dB)
100
80
60
40
20
0
V+ = 15 V
V- = - 15 V Ref. 10 dBm
Crosstalk
Off Isolation
50
40
30
Q (pC)
20
10
0
- 10
- 20
- 30
CL = 1 nF
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
100
1k
- 10
10 k
100 k
-5
1M
0
10 M
5
10
f – Frequency (Hz)
Crosstalk and Off Isolation vs. Frequency
VS – Source Voltage (V)
Charge Injection vs. Source Voltage
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
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DG441/442
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.4
20
V IN (V)
0
1.6
I S, I D (pA)
- 20
- 40
0.8
- 60
- 80
0
0
±5
± 10
± 15
± 20
- 100
- 15
- 10
-5
0
IS(off) , ID(off)
ID(on)
V+ = 15 V
V- = - 15 V
For I(off), V D = - VS
5
10
15
V+, V– Positive and Negative Supplies (V)
Switching Threshold vs. Supply Voltage
VD or V S – Drain or Source Voltage (V)
Source/Drain Leakage Currents
10
I S, I D (pA)
0
- 10
- 20
- 30
- 40
IS(off) , ID(off)
IS(on) + ID(on)
V+ = 12 V V- = 0 V
For ID, V S = 0
For IS, V D = 0
50
44
5 V – CMOS Compatible
V+ (V)
40
30
20
TTL Compatible
VIN = 0.8 V, 2.4 V
10
3
0
V+
S
D IN
V-
CMOS Compatible
0
10
6
8
0
- 10
2
12
4
- 20
- 30
- 40
- 50
VD or V S – Drain or Source Voltage (V)
Source/Drain Leakage Currents (Single 12 V Supply)
V- – Negative Supply (V)
Operating Voltage
tON
tOFF
160
140
120
500
t (ns)
400
t (ns)
100
300
80
200
60
100
40
20
± 10
± 12
± 14
± 16
± 18
± 20
± 22
Supply Voltage (V)
0
V- = 0 V
tON
tOFF
8
10
12
14
16
18
20
22
VS − Source Voltage (V)
Switching Time vs. Power Supply Voltage
Switching Time vs. Power Supply Voltage
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Document Number: 70053
S-71241–Rev. I, 25-Jun-07
DG441/442
Vishay Siliconix
TEST CIRCUITS
+ 15 V
V+
O
S
10 V
Logic
D
V
3 V Input
0V
Switch
VS
50 %
50 %
tr < 20 ns tf < 20 ns
tOFF
IN
3V
GND
V-
- 15 V
RL
1 kΩ
CL
35 pF
Input
Switch
VO
0 V Output
tON
80 %
80 %
CL (includes fixture and stray capacitance)
Figure 2. Switching Time
Note:
Logic input waveform is inverted for DG442.
+ 15 V
V+ Rg
S
D
VO
VO
INX
OFF
ΔV
O
ON
OFF
IN
3V
GND
V-
- 15 V
CL
1 nF
Figure 3. Charge Injection
(DG441)
OFF INX
(DG442)
ON
Q = ΔVO x CL
OFF
C = 1 mF tantalum in parallel with 0.01 mF ceramic
+ 15 V
C
V+
S1
VS
D1
+ 15 V
C
Rg = 50 Ω
0 V, 2.4 V NC
0 V, 2.4 V
IN1
S2
IN2
GND
D2
V-
C
50 Ω
VO
RL
VS
Rg = 50 Ω
0 V, 2.4 V
O
VS
V+
D
RL
IN
GND
V-
C
- 15 V
XTA LK Isolation = 20 log
C = RF bypass
VS
VO
Figure 4. Crosstalk
+ 15 V
C
- 15 V
VS
Off Isolation = 20 log
VO
Figure 5. Off Isolation
V+
S
0 V, 2.4 V
IN
GND
D
V-
C
Meter
HP4192A Impedance Analyzer
or Equivalent
- 15 V
Figure 6. Source/Drain Capacitances
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
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7
DG441/442
Vishay Siliconix
APPLICATIONS
+ 15 V
+ 24 V
+ 15 V IN
DG442
V+
150 Ω
RL
I = 3 A VN0300 L, M
+ 15 V
GND
V-
10 kΩ
+ 15 V
VIN
+
-
1/4 DG442
S
D
CH
+
-
VOUT
0 = Load Off
1 = Load On
IN
- 15 V
H = Sample
L = Hold
Figure 7. Power MOSFET Driver
Figure 8. Open Loop Sample-and-Hold
VIN
+
+ 15 V V+
VOUT
Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit ac- curacy of circuit.
GAIN1
AV = 1
R1
90 kΩ
GAIN2
AV = 10
GAIN3
AV = 20
GAIN4
AV = 100
DG441 or DG442
VR2
5 kΩ
GND
R3
4 kΩ
R4
1 kΩ
With SW 4 Closed
VOUT
=
VIN
R1 + R2 + R3 + R 4
R4
= 100
- 15 V
Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70053.
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Document Number: 70053
S-71241–Rev. I, 25-Jun-07
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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