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Download Interconnect Driven CAD Conventional Design Flow
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Device Degradation Due to Hot Carrier z Hot carriers are energetic electrons excited by E-field in transistorâs drain region z May be injected into gate oxide and cause damage to oxide or interface z Hot carrier effect degrades circuit performance âTrappedâ electrons increase Vt Degrades saturation current ION Circuit speed is degraded z Degradation is time-dependent Circuit will fail at some point 53 Device Degradation Due to Hot Carrier z EDA needs (B. McGaughy, 1998) Need to estimate life-time (I.e. time to failure) Need to estimate trade-offs between more reliable and slower design 54 27
