Download Integration Of Passive Components Into Integrated Circuits

Introduction
Passive Components In IC's
Summary
Integration Of Passive Components Into Integrated
Circuits
Gajanana G K
Winter Academy, Digha(9'th to 16'th December, 2006)
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
Outline
1
Introduction
Advantages Of Integrated Circuits Over Discrete Circuits
Passive Components On Integrated Circuits
2
Passive Components In IC's
Integrated Circuit Resistors
Integrated Circuit Capacitor
Integrated Circuit Inductor
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
Need for IC's
Passive components on IC
Outline
1
Introduction
Advantages Of Integrated Circuits Over Discrete Circuits
Passive Components On Integrated Circuits
2
Passive Components In IC's
Integrated Circuit Resistors
Integrated Circuit Capacitor
Integrated Circuit Inductor
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
Need for IC's
Passive components on IC
What are Integrated Circuits(IC's)?
Denition
It is an ensemble of both active(e.g. transitor) and
passive(e.g.resistor, capacitor, inductor) devices formed on and
within single-crystal semiconductor substrate and interconnected by
a metallization pattern as opposed to discrete devices connected by
wire bonding.
Figure:
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
Need for IC's
Passive components on IC
Advantages Of Integrated Circuits Over Discrete Circuits
Reduction of interconnection parasitics. IC's with mulitlevel
metallization reduce overall wire length.
Full utilization Of Semiconductor Wafer Area. Close packing
possible.
Drastic Reduction In Processing Cost. Wire bonding is
time-consuming and error-prone.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
Need for IC's
Passive components on IC
Advantages Of Integrated Circuits Over Discrete Circuits
Reduction of interconnection parasitics. IC's with mulitlevel
metallization reduce overall wire length.
Full utilization Of Semiconductor Wafer Area. Close packing
possible.
Drastic Reduction In Processing Cost. Wire bonding is
time-consuming and error-prone.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
Need for IC's
Passive components on IC
Advantages Of Integrated Circuits Over Discrete Circuits
Reduction of interconnection parasitics. IC's with mulitlevel
metallization reduce overall wire length.
Full utilization Of Semiconductor Wafer Area. Close packing
possible.
Drastic Reduction In Processing Cost. Wire bonding is
time-consuming and error-prone.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
Need for IC's
Passive components on IC
Outline
1
Introduction
Advantages Of Integrated Circuits Over Discrete Circuits
Passive Components On Integrated Circuits
2
Passive Components In IC's
Integrated Circuit Resistors
Integrated Circuit Capacitor
Integrated Circuit Inductor
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
Need for IC's
Passive components on IC
Classication of IC's based on passive element structure
Monolithic Circuits
Entire circuit in a single piece of semiconductor.
Insulating layers & metallization patterns are
intimately bonded to the surface of the chip.
Compact and allows batch fabrication
Hybrid Circuits
Contains one or more monolithic circuits or
individual transistors bonded to insulating
substrate with resistors, capacitors, etc. with
appropriate interconnections.
Allows isolation and greater precision of passive
components. Suitable for small nos.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
Need for IC's
Passive components on IC
Classication of IC's based on passive element structure
Monolithic Circuits
Entire circuit in a single piece of semiconductor.
Insulating layers & metallization patterns are
intimately bonded to the surface of the chip.
Compact and allows batch fabrication
Hybrid Circuits
Contains one or more monolithic circuits or
individual transistors bonded to insulating
substrate with resistors, capacitors, etc. with
appropriate interconnections.
Allows isolation and greater precision of passive
components. Suitable for small nos.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
Need for IC's
Passive components on IC
Technologies in Monolithic Circuits
Thick Film Process(about 25µm)
Low volume, fast turn. Low resistivity applications.
Conductive and resistive pastes (metal powders in
organic binders) applied and cured in oven.
Dried at around 100 C .
Fired at around 800 C .
Materials used:
Resistor-gold, platinum-gold, copper, silver,
palladium-silver and platinum-silver
Dielectrics-alumina, glass and barium-titanium
oxide
Substrates- alumina, aluminium nitride and
beryllia
0
0
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
Need for IC's
Passive components on IC
Technologies in Monolithic Circuits
Thick Film Process(about 25µm)
Low volume, fast turn. Low resistivity applications.
Conductive and resistive pastes (metal powders in
organic binders) applied and cured in oven.
Dried at around 100 C .
Fired at around 800 C .
Materials used:
Resistor-gold, platinum-gold, copper, silver,
palladium-silver and platinum-silver
Dielectrics-alumina, glass and barium-titanium
oxide
Substrates- alumina, aluminium nitride and
beryllia
0
0
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
Need for IC's
Passive components on IC
Technologies in Monolithic Circuits
Thick Film Process(about 25µm)
Low volume, fast turn. Low resistivity applications.
Conductive and resistive pastes (metal powders in
organic binders) applied and cured in oven.
Dried at around 100 C .
Fired at around 800 C .
Materials used:
Resistor-gold, platinum-gold, copper, silver,
palladium-silver and platinum-silver
Dielectrics-alumina, glass and barium-titanium
oxide
Substrates- alumina, aluminium nitride and
beryllia
0
0
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
Need for IC's
Passive components on IC
Technologies in Monolithic Circuits
Thin Film Process(about 0.1µm to 0.5µm)
Greater precision and miniaturisation. Used when
space is a constraint
Process:
Vacuum deposition of patterns and resistors.
Chemical processes such as sputtering,
evaporation, plating and chemical vapour
deposition (CVD) are used.
Photolithography and etching to cut away
unnecessary material.
Materials used:
Resistor-nickel chromium alloys or tantalum.
Dielectrics-polyimide, SiO and Si N
Substrates- glass, silicon, sapphire, alumina &
aluminium nitride.
2
Gajanana G K, B.Tech, EE, IIT-Madras
3
4
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
Need for IC's
Passive components on IC
Technologies in Monolithic Circuits
Thin Film Process(about 0.1µm to 0.5µm)
Greater precision and miniaturisation. Used when
space is a constraint
Process:
Vacuum deposition of patterns and resistors.
Chemical processes such as sputtering,
evaporation, plating and chemical vapour
deposition (CVD) are used.
Photolithography and etching to cut away
unnecessary material.
Materials used:
Resistor-nickel chromium alloys or tantalum.
Dielectrics-polyimide, SiO and Si N
Substrates- glass, silicon, sapphire, alumina &
aluminium nitride.
2
Gajanana G K, B.Tech, EE, IIT-Madras
3
4
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
Need for IC's
Passive components on IC
Technologies in Monolithic Circuits
Thin Film Process(about 0.1µm to 0.5µm)
Greater precision and miniaturisation. Used when
space is a constraint
Process:
Vacuum deposition of patterns and resistors.
Chemical processes such as sputtering,
evaporation, plating and chemical vapour
deposition (CVD) are used.
Photolithography and etching to cut away
unnecessary material.
Materials used:
Resistor-nickel chromium alloys or tantalum.
Dielectrics-polyimide, SiO and Si N
Substrates- glass, silicon, sapphire, alumina &
aluminium nitride.
2
Gajanana G K, B.Tech, EE, IIT-Madras
3
4
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Outline
1
Introduction
Advantages Of Integrated Circuits Over Discrete Circuits
Passive Components On Integrated Circuits
2
Passive Components In IC's
Integrated Circuit Resistors
Integrated Circuit Capacitor
Integrated Circuit Inductor
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Methods to obtain IC resistance
One method: deposit a resistive layer and pattern that by
photolithography and etching
Another method: Dene a window in a SiO2 layer grown
thermally and implant(or diuse) impurities of the opposite
conductivity type into wafer
Method-II has produces resistors of two shapes:
1
2
Meander Shape
Bar Shape
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Methods to obtain IC resistance
One method: deposit a resistive layer and pattern that by
photolithography and etching
Another method: Dene a window in a SiO2 layer grown
thermally and implant(or diuse) impurities of the opposite
conductivity type into wafer
Method-II has produces resistors of two shapes:
1
2
Meander Shape
Bar Shape
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Methods to obtain IC resistance
One method: deposit a resistive layer and pattern that by
photolithography and etching
Another method: Dene a window in a SiO2 layer grown
thermally and implant(or diuse) impurities of the opposite
conductivity type into wafer
Method-II has produces resistors of two shapes:
1
2
Meander Shape
Bar Shape
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Illustrations
Figure:
Figure:
Figure:
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Concept Of Sheet Resistance-I
Dierential conductance dG of a thin layer of the p −type material
that is of thickness dx parallel to the surface and at a depth x is
dG
= q µp p (x )
W
dx
L
where
W is the width of the bar
L is the length of the bar(neglecting end-contact areas right
now)
µp is the mobility of a hole
p(x ) is the doping concentration.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Concept Of Sheet Resistance-I
Dierential conductance dG of a thin layer of the p −type material
that is of thickness dx parallel to the surface and at a depth x is
dG
= q µp p (x )
W
dx
L
where
W is the width of the bar
L is the length of the bar(neglecting end-contact areas right
now)
µp is the mobility of a hole
p(x ) is the doping concentration.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Concept Of Sheet Resistance-I
Dierential conductance dG of a thin layer of the p −type material
that is of thickness dx parallel to the surface and at a depth x is
dG
= q µp p (x )
W
dx
L
where
W is the width of the bar
L is the length of the bar(neglecting end-contact areas right
now)
µp is the mobility of a hole
p(x ) is the doping concentration.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Concept Of Sheet Resistance-I
Dierential conductance dG of a thin layer of the p −type material
that is of thickness dx parallel to the surface and at a depth x is
dG
= q µp p (x )
W
dx
L
where
W is the width of the bar
L is the length of the bar(neglecting end-contact areas right
now)
µp is the mobility of a hole
p(x ) is the doping concentration.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Concept Of Sheet Resistance-I
Dierential conductance dG of a thin layer of the p −type material
that is of thickness dx parallel to the surface and at a depth x is
dG
= q µp p (x )
W
dx
L
where
W is the width of the bar
L is the length of the bar(neglecting end-contact areas right
now)
µp is the mobility of a hole
p(x ) is the doping concentration.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
IC resistors
Introduction
IC capacitors
Passive Components In IC's
IC inductors
Summary
Concept Of Sheet Resistance-II
The total conductance of the entire implanted region of the bar is
given by
Z
Z
G
x
=
0
1
dG
=q
where x1 is the junction depth.
We can write
G
W
L
=g
x
0
1
µp p (x )dx
W
L
where g = 0x µp p (x )dx is the conductance of a square resistor
pattern, i.e. G = g when W = L.
R
1
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
IC resistors
Introduction
IC capacitors
Passive Components In IC's
IC inductors
Summary
Concept Of Sheet Resistance-II
The total conductance of the entire implanted region of the bar is
given by
Z
Z
G
x
=
0
1
dG
=q
where x1 is the junction depth.
We can write
G
W
L
=g
x
0
1
µp p (x )dx
W
L
where g = 0x µp p (x )dx is the conductance of a square resistor
pattern, i.e. G = g when W = L.
R
1
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Sheet Resistance And End-corrections
The resistance is given by
R = G1 = WL ( g1 ) where 1/g -> Rsq -sheet
resistance(Ω /square).
L
W basically gives no. of squares of side
W.
Each end contact corresponds to
approximately 0.65 squares.
For the meander-shaped resistor, square
at the bend contributes 0.65 squares.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Sheet Resistance And End-corrections
The resistance is given by
R = G1 = WL ( g1 ) where 1/g -> Rsq -sheet
resistance(Ω /square).
L
W basically gives no. of squares of side
W.
Each end contact corresponds to
approximately 0.65 squares.
For the meander-shaped resistor, square
at the bend contributes 0.65 squares.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Sheet Resistance And End-corrections
The resistance is given by
R = G1 = WL ( g1 ) where 1/g -> Rsq -sheet
resistance(Ω /square).
L
W basically gives no. of squares of side
W.
Each end contact corresponds to
approximately 0.65 squares.
For the meander-shaped resistor, square
at the bend contributes 0.65 squares.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Sheet Resistance And End-corrections
The resistance is given by
R = G1 = WL ( g1 ) where 1/g -> Rsq -sheet
resistance(Ω /square).
L
W basically gives no. of squares of side
W.
Each end contact corresponds to
approximately 0.65 squares.
For the meander-shaped resistor, square
at the bend contributes 0.65 squares.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Outline
1
Introduction
Advantages Of Integrated Circuits Over Discrete Circuits
Passive Components On Integrated Circuits
2
Passive Components In IC's
Integrated Circuit Resistors
Integrated Circuit Capacitor
Integrated Circuit Inductor
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Methods To Obtain IC capacitance
Two types of capacitors used in IC's:
MOS Capacitor
Capacitance independent of applied voltage
Low series resistance
p − n junction Capacitor
Capacitance dependent on voltage
Higher series resistance
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Methods To Obtain IC capacitance
Two types of capacitors used in IC's:
MOS Capacitor
Capacitance independent of applied voltage
Low series resistance
p − n junction Capacitor
Capacitance dependent on voltage
Higher series resistance
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
IC resistors
Passive Components In IC's
IC capacitors
Summary
IC inductors
MOS capacitance
Fabrication using
Heavily doped region(such as emitter
region) as one plate
Figure:
Top metal electrode as the other plate
Intervening oxide layer as dielectric
Capacitance given by
C
=
ox
d
where ox is the dielectric permittivity of the insulating oxide layer &
d is the oxide thickness
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
IC resistors
Passive Components In IC's
IC capacitors
Summary
IC inductors
MOS capacitance
Fabrication using
Heavily doped region(such as emitter
region) as one plate
Figure:
Top metal electrode as the other plate
Intervening oxide layer as dielectric
Capacitance given by
C
=
ox
d
where ox is the dielectric permittivity of the insulating oxide layer &
d is the oxide thickness
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
IC resistors
Passive Components In IC's
IC capacitors
Summary
IC inductors
MOS capacitance
Fabrication using
Heavily doped region(such as emitter
region) as one plate
Figure:
Top metal electrode as the other plate
Intervening oxide layer as dielectric
Capacitance given by
C
=
ox
d
where ox is the dielectric permittivity of the insulating oxide layer &
d is the oxide thickness
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
IC resistors
Passive Components In IC's
IC capacitors
Summary
IC inductors
MOS capacitance
Fabrication using
Heavily doped region(such as emitter
region) as one plate
Figure:
Top metal electrode as the other plate
Intervening oxide layer as dielectric
Capacitance given by
C
=
ox
d
where ox is the dielectric permittivity of the insulating oxide layer &
d is the oxide thickness
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Building MOS capacitance
A thick oxide layer thermally grown on Si
substrate.
Window is lithographically dened and etched
into the oxide
Diusion or ion implantation forms p+ region
in the window area.
Thin oxide layer thermally grown in window
area
Metallization step
Insulators of Higher d ->Increase of capacitance
Examples
Si N (d
3
4
=
7), Ta O (d =25)
2
3
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Building MOS capacitance
A thick oxide layer thermally grown on Si
substrate.
Window is lithographically dened and etched
into the oxide
Diusion or ion implantation forms p+ region
in the window area.
Thin oxide layer thermally grown in window
area
Metallization step
Insulators of Higher d ->Increase of capacitance
Examples
Si N (d
3
4
=
7), Ta O (d =25)
2
3
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Building MOS capacitance
A thick oxide layer thermally grown on Si
substrate.
Window is lithographically dened and etched
into the oxide
Diusion or ion implantation forms p+ region
in the window area.
Thin oxide layer thermally grown in window
area
Metallization step
Insulators of Higher d ->Increase of capacitance
Examples
Si N (d
3
4
=
7), Ta O (d =25)
2
3
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Building MOS capacitance
A thick oxide layer thermally grown on Si
substrate.
Window is lithographically dened and etched
into the oxide
Diusion or ion implantation forms p+ region
in the window area.
Thin oxide layer thermally grown in window
area
Metallization step
Insulators of Higher d ->Increase of capacitance
Examples
Si N (d
3
4
=
7), Ta O (d =25)
2
3
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Building MOS capacitance
A thick oxide layer thermally grown on Si
substrate.
Window is lithographically dened and etched
into the oxide
Diusion or ion implantation forms p+ region
in the window area.
Thin oxide layer thermally grown in window
area
Metallization step
Insulators of Higher d ->Increase of capacitance
Examples
Si N (d
3
4
=
7), Ta O (d =25)
2
3
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Building MOS capacitance
A thick oxide layer thermally grown on Si
substrate.
Window is lithographically dened and etched
into the oxide
Diusion or ion implantation forms p+ region
in the window area.
Thin oxide layer thermally grown in window
area
Metallization step
Insulators of Higher d ->Increase of capacitance
Examples
Si N (d
3
4
=
7), Ta O (d =25)
2
3
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Building MOS capacitance
A thick oxide layer thermally grown on Si
substrate.
Window is lithographically dened and etched
into the oxide
Diusion or ion implantation forms p+ region
in the window area.
Thin oxide layer thermally grown in window
area
Metallization step
Insulators of Higher d ->Increase of capacitance
Examples
Si N (d
3
4
=
7), Ta O (d =25)
2
3
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Building MOS capacitance
A thick oxide layer thermally grown on Si
substrate.
Window is lithographically dened and etched
into the oxide
Diusion or ion implantation forms p+ region
in the window area.
Thin oxide layer thermally grown in window
area
Metallization step
Insulators of Higher d ->Increase of capacitance
Examples
Si N (d
3
4
=
7), Ta O (d =25)
2
3
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
P-N Junction Capacitance
n+ − p junction is used.
Usually reverse biased(p region reverse biased
wrt n region)
Capacitance varies as (VR + Vbi ) where
VR is the applied reverse voltage and Vbi is
the built-in junction potential
Series resistance higher due to lower
conductivity of p region.
+
−1/2
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
P-N Junction Capacitance
n+ − p junction is used.
Usually reverse biased(p region reverse biased
wrt n region)
Capacitance varies as (VR + Vbi ) where
VR is the applied reverse voltage and Vbi is
the built-in junction potential
Series resistance higher due to lower
conductivity of p region.
+
−1/2
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
P-N Junction Capacitance
n+ − p junction is used.
Usually reverse biased(p region reverse biased
wrt n region)
Capacitance varies as (VR + Vbi ) where
VR is the applied reverse voltage and Vbi is
the built-in junction potential
Series resistance higher due to lower
conductivity of p region.
+
−1/2
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
P-N Junction Capacitance
n+ − p junction is used.
Usually reverse biased(p region reverse biased
wrt n region)
Capacitance varies as (VR + Vbi ) where
VR is the applied reverse voltage and Vbi is
the built-in junction potential
Series resistance higher due to lower
conductivity of p region.
+
−1/2
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
P-N Junction Capacitance
n+ − p junction is used.
Usually reverse biased(p region reverse biased
wrt n region)
Capacitance varies as (VR + Vbi ) where
VR is the applied reverse voltage and Vbi is
the built-in junction potential
Series resistance higher due to lower
conductivity of p region.
+
−1/2
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Outline
1
Introduction
Advantages Of Integrated Circuits Over Discrete Circuits
Passive Components On Integrated Circuits
2
Passive Components In IC's
Integrated Circuit Resistors
Integrated Circuit Capacitor
Integrated Circuit Inductor
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Relevance Of IC Inductors
Low to medium frequency applications:
active inductor synthesis preferred
IC inductors relevant today in radio
frequency and other high-frequency
applications. Reasons:
Increased speed of silicon devices
Advancement in multi-level
interconnect technology
1
2
Example
III-V based Monolithic Microwave Integrated
Circuits
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Relevance Of IC Inductors
Low to medium frequency applications:
active inductor synthesis preferred
IC inductors relevant today in radio
frequency and other high-frequency
applications. Reasons:
Increased speed of silicon devices
Advancement in multi-level
interconnect technology
1
2
Example
III-V based Monolithic Microwave Integrated
Circuits
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Relevance Of IC Inductors
Low to medium frequency applications:
active inductor synthesis preferred
IC inductors relevant today in radio
frequency and other high-frequency
applications. Reasons:
Increased speed of silicon devices
Advancement in multi-level
interconnect technology
1
2
Example
III-V based Monolithic Microwave Integrated
Circuits
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Relevance Of IC Inductors
Low to medium frequency applications:
active inductor synthesis preferred
IC inductors relevant today in radio
frequency and other high-frequency
applications. Reasons:
Increased speed of silicon devices
Advancement in multi-level
interconnect technology
1
2
Example
III-V based Monolithic Microwave Integrated
Circuits
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Building an IC inductor
Thin Film Spiral Inductor(2-level)
A thick oxide layer thermally grown on Si
substrate.
First metal deposited and dened as one end of
inductor
Another dielectric is deposited onto metal 1
A via-hole is dened lithographically & etched
into the oxide
Metal 2 is deposited to ll the via-hole
Spiral pattern can be dened and etched on
metal 2 as second end
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Building an IC inductor
Thin Film Spiral Inductor(2-level)
A thick oxide layer thermally grown on Si
substrate.
First metal deposited and dened as one end of
inductor
Another dielectric is deposited onto metal 1
A via-hole is dened lithographically & etched
into the oxide
Metal 2 is deposited to ll the via-hole
Spiral pattern can be dened and etched on
metal 2 as second end
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Building an IC inductor
Thin Film Spiral Inductor(2-level)
A thick oxide layer thermally grown on Si
substrate.
First metal deposited and dened as one end of
inductor
Another dielectric is deposited onto metal 1
A via-hole is dened lithographically & etched
into the oxide
Metal 2 is deposited to ll the via-hole
Spiral pattern can be dened and etched on
metal 2 as second end
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Building an IC inductor
Thin Film Spiral Inductor(2-level)
A thick oxide layer thermally grown on Si
substrate.
First metal deposited and dened as one end of
inductor
Another dielectric is deposited onto metal 1
A via-hole is dened lithographically & etched
into the oxide
Metal 2 is deposited to ll the via-hole
Spiral pattern can be dened and etched on
metal 2 as second end
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Building an IC inductor
Thin Film Spiral Inductor(2-level)
A thick oxide layer thermally grown on Si
substrate.
First metal deposited and dened as one end of
inductor
Another dielectric is deposited onto metal 1
A via-hole is dened lithographically & etched
into the oxide
Metal 2 is deposited to ll the via-hole
Spiral pattern can be dened and etched on
metal 2 as second end
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Building an IC inductor
Thin Film Spiral Inductor(2-level)
A thick oxide layer thermally grown on Si
substrate.
First metal deposited and dened as one end of
inductor
Another dielectric is deposited onto metal 1
A via-hole is dened lithographically & etched
into the oxide
Metal 2 is deposited to ll the via-hole
Spiral pattern can be dened and etched on
metal 2 as second end
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Evaluating IC inductors
Quality Factor Q = Lω/R where L,R , and ω
are the inductance, resistance and frequency
respectively.
High Q factor desirable>Low losses
Q value increases linearly with frequency and
then drops at higher frequency due to
parasitic resistances and capacitances.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Evaluating IC inductors
Quality Factor Q = Lω/R where L,R , and ω
are the inductance, resistance and frequency
respectively.
High Q factor desirable>Low losses
Q value increases linearly with frequency and
then drops at higher frequency due to
parasitic resistances and capacitances.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Evaluating IC inductors
Quality Factor Q = Lω/R where L,R , and ω
are the inductance, resistance and frequency
respectively.
High Q factor desirable>Low losses
Q value increases linearly with frequency and
then drops at higher frequency due to
parasitic resistances and capacitances.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Evaluating IC inductors
Quality Factor Q = Lω/R where L,R , and ω
are the inductance, resistance and frequency
respectively.
High Q factor desirable>Low losses
Q value increases linearly with frequency and
then drops at higher frequency due to
parasitic resistances and capacitances.
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Optimising on Q-quality factor
Use low dielectric constant(<3.9) materials
to reduce parasitic capacitance
Thick lm metal or low resistivity metals to
reduce series resitance
Use insulating substrate to increase parallel
resistance.
Examples
Silicon on sapphire, silicon on glass, quartz
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Optimising on Q-quality factor
Use low dielectric constant(<3.9) materials
to reduce parasitic capacitance
Thick lm metal or low resistivity metals to
reduce series resitance
Use insulating substrate to increase parallel
resistance.
Examples
Silicon on sapphire, silicon on glass, quartz
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Optimising on Q-quality factor
Use low dielectric constant(<3.9) materials
to reduce parasitic capacitance
Thick lm metal or low resistivity metals to
reduce series resitance
Use insulating substrate to increase parallel
resistance.
Examples
Silicon on sapphire, silicon on glass, quartz
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Optimising on Q-quality factor
Use low dielectric constant(<3.9) materials
to reduce parasitic capacitance
Thick lm metal or low resistivity metals to
reduce series resitance
Use insulating substrate to increase parallel
resistance.
Examples
Silicon on sapphire, silicon on glass, quartz
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Optimising on Q-quality factor
Use low dielectric constant(<3.9) materials
to reduce parasitic capacitance
Thick lm metal or low resistivity metals to
reduce series resitance
Use insulating substrate to increase parallel
resistance.
Examples
Silicon on sapphire, silicon on glass, quartz
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Figure:
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Numerical Calculation Of Inductance
For exact calculation, complicated simulation must be run taking
into account:
Resistance of metal
Capacitance of oxide
Line-to-line capacitance
Resistance of substrate
A simple equation with a rst-order approximation:
L = µ0 n2 r
≈ 1.2 × 10−06 n2 r
where
µ0 is the permeability in vacuum(4π × 10−07 H/m)
L is in henries
n is the no. of turns
r is the radius of the spiral in metres
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Numerical Calculation Of Inductance
For exact calculation, complicated simulation must be run taking
into account:
Resistance of metal
Capacitance of oxide
Line-to-line capacitance
Resistance of substrate
A simple equation with a rst-order approximation:
L = µ0 n2 r
≈ 1.2 × 10−06 n2 r
where
µ0 is the permeability in vacuum(4π × 10−07 H/m)
L is in henries
n is the no. of turns
r is the radius of the spiral in metres
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Numerical Calculation Of Inductance
For exact calculation, complicated simulation must be run taking
into account:
Resistance of metal
Capacitance of oxide
Line-to-line capacitance
Resistance of substrate
A simple equation with a rst-order approximation:
L = µ0 n2 r
≈ 1.2 × 10−06 n2 r
where
µ0 is the permeability in vacuum(4π × 10−07 H/m)
L is in henries
n is the no. of turns
r is the radius of the spiral in metres
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Numerical Calculation Of Inductance
For exact calculation, complicated simulation must be run taking
into account:
Resistance of metal
Capacitance of oxide
Line-to-line capacitance
Resistance of substrate
A simple equation with a rst-order approximation:
L = µ0 n2 r
≈ 1.2 × 10−06 n2 r
where
µ0 is the permeability in vacuum(4π × 10−07 H/m)
L is in henries
n is the no. of turns
r is the radius of the spiral in metres
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
IC resistors
IC capacitors
IC inductors
Numerical Calculation Of Inductance
For exact calculation, complicated simulation must be run taking
into account:
Resistance of metal
Capacitance of oxide
Line-to-line capacitance
Resistance of substrate
A simple equation with a rst-order approximation:
L = µ0 n2 r
≈ 1.2 × 10−06 n2 r
where
µ0 is the permeability in vacuum(4π × 10−07 H/m)
L is in henries
n is the no. of turns
r is the radius of the spiral in metres
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
Summary
Integrated circuits preferred over discrete circuits for
1
Reliability
2
Mass manufacturing
Integration of passive devices like resistors, capacitors &
particularly inductors is a challenging job involving intricate
fabrication techniques
Outlook
A lot of ongoing work in these areas particularly IC inductors
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
Summary
Integrated circuits preferred over discrete circuits for
1
Reliability
2
Mass manufacturing
Integration of passive devices like resistors, capacitors &
particularly inductors is a challenging job involving intricate
fabrication techniques
Outlook
A lot of ongoing work in these areas particularly IC inductors
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
Summary
Integrated circuits preferred over discrete circuits for
1
Reliability
2
Mass manufacturing
Integration of passive devices like resistors, capacitors &
particularly inductors is a challenging job involving intricate
fabrication techniques
Outlook
A lot of ongoing work in these areas particularly IC inductors
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components
Introduction
Passive Components In IC's
Summary
Further Reading
Samuel J. Horowitz, et al., Advanced Ceramic Technology for
HDI and Integrated Packaging, in Advanced Packaging, March
1999, p.40
Aicha Elshabini, Fred D. Barlow, Thin Film Technology
Handbook, 1997
G.V. Planar and L.S. Phillips, Thick Film Circuits, 1972
S.M. Sze, Physics Of Semiconductor Devices
Streetman and Banerjee, Semiconductor Devices
Gajanana G K, B.Tech, EE, IIT-Madras
IC RLC components