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Transcript
Turkish Journal of Electrical Engineering & Computer Sciences
http://journals.tubitak.gov.tr/elektrik/
Research Article
Turk J Elec Eng & Comp Sci
(2013) 21: 1972 – 1982
c TÜBİTAK
⃝
doi:10.3906/elk-1201-114
A 5-bit 5 Gs/s flash ADC using multiplexer-based decoder
Oktay AYTAR,1 Ali TANGEL,2,∗Kudret ŞAHİN2
Department of Electrical and Electronics Engineering, Abant İzzet Baysal University, Gölköy Campus,
Bolu, Turkey
2
Department of Electronics and Communication Engineering, Kocaeli University, İzmit, Kocaeli, Turkey
1
Received: 30.01.2012
•
Accepted: 14.06.2012
•
Published Online: 24.10.2013
•
Printed: 18.11.2013
Abstract: This paper presents a 5-bit flash analog-to-digital converter design using the 0.18- µ m Taiwan Semiconductor
Manufacturing Company’s CMOS technology library. The designed system consists of 2 main blocks, a comparator
array, and a digital decoder. The digital decoder contains a latch, 1-of-N decoder, and fat-tree encoder units. The
1-of-N decoder is implemented using 2 × 1 multiplexers. As a result, the active die area and the power consumption are
reduced, in addition to an increase in the sampling frequency. The power supply voltage range for the overall system is
± 0.9 V. For testing purposes, a ramp signal of between –0.45 V and 0.7 V is applied to the converter input. The sampling
frequency is 5 Gs/s. The simulation results include a maximum power consumption of 28 mW, integral nonlinearity
values of between –0.65 least significant bits (LSB) and + 0.01 LSB, differential nonlinearity values of between –0.3 LSB
and + 0.13 LSB, and an active die area of 0.1 mm 2 .
Key words: Flash ADC, CMOS VLSI, high-speed data converters
1. Introduction
Analog-to-digital converters (ADCs) are the most important core units to convert analog information to
corresponding digital forms. This means that they can be considered as bridges between the real word and
the digital world. ADCs are commonly used in the application areas of mobile phones, cameras, digital TVs,
wireless sensor networks, transmitter and receiver circuits, and the conversion processes of the signals for baseband applications [1–4]. Flash ADC is known as the fastest type of ADC among designers. It has the most
important role, especially for magnetic read channel applications, optical data recording, digital communication
systems requiring a high data processing rate, and optical communication systems [5–8]. The fully parallel (fullflash) ADC architecture is depicted in Figure 1. In this scheme, the comparison processes, with all quantization
levels, correspond to an instant analog input voltage level and are done simultaneously during only 1 cycle of the
sampling clock signal. The 1st phase of the sampling clock is for sampling and the 2nd phase is for converting
and obtaining output binary data [6]. This property makes the flash ADC the fastest one among the others.
The most effective role for ADC performance is played by analog blocks. The design constraints related
to the conversion speed are mostly defined by the performances of these blocks, especially by the comparators
used in flash designs.
The 2 well-known disadvantages for flash ADCs are their low resolution and higher power consumption
due to a larger chip area when compared to other types of ADC architectures.
∗ Correspondence:
1972
[email protected]
AYTAR et al./Turk J Elec Eng & Comp Sci
R
R
+
+
+
-
Thermometer to Binary
Decoder Block
R
Vinput
Thermometer Code Block
Vref,p
N-Bits
R
Vref,n
Figure 1. Flash ADC general architecture.
There are several flash ADC designs proposed in the literature. However, the 5-bit ADC, which is
advertised in this study, is different than the others in terms of the subblocks employed in it. It can be
considered as a case study, which employs different design schemes and methods advertised in the literature to
be able to obtain a higher performance full-flash ADC. Finally, a fast and highly linear 5-bit flash ADC design
implementation is achieved in the 0.18-µ m CMOS technology using the Cadence IC design platform. This
paper is a revised version of the authors’ earlier work [9].
The rest of the paper presents all of the design steps and related simulation results. The conclusion
section compares the proposed ADC performance with similar designs from the literature.
2. The 5-bit CMOS flash ADC design steps
The block diagram of the proposed flash ADC is shown in Figure 2. It consists of a comparator block, latch
block, 2 × 1 MUX-based 1-of-N decoder block, and fat-tree–based encoder block.
Analog
Input
Comparator
Block
Latch
Block
2x1 Mux –
Based
1-of-N
Decoder
Block
Fat-Tree
Encoder
Block
N-Bits
Outputs
Figure 2. The proposed flash ADC architecture.
2.1. The comparator structure
In the designed ADC system, the comparator schematic shown in Figure 3 is chosen [10]. The transistor aspect
ratios and critical DC bias voltages used in the comparator circuit are also given in Figure 3 and Table 1,
respectively. In this circuit, M2 and M3 are the N-type metal-oxide-semiconductor (NMOS) input differential
pairs driven by the tail current transistor M4. The differential pair is loaded by diode-connected P-type metaloxide-semiconductor (PMOS) transistors (M5–M6) and cross-coupled PMOS transistors (M0–M1), which serve
as a positive feedback loop. The purpose of this feedback loop is to boost the differential voltage gain obtained
by M2–M3 and to balance the output resistance. M9 and M10 form a current mirror and its reference current is
provided by M5 and M7 together. The comparator’s first-stage output is additionally amplified by a commonsource PMOS amplifier (M8). The very last stage of the comparator is a basic CMOS inverter circuit (M11–M12).
The DC analysis result of the complete comparator is shown in Figure 4, where it can be seen that a nice voltage
comparison with almost zero input offset is obtained.
1973
AYTAR et al./Turk J Elec Eng & Comp Sci
Vdd
M5
M1
M0
M6
M8
M7
Vin
M3
M2
M11
Vref
output
M12
M4
Vbias
M10
M9
-Vdd
Figure 3. The comparator schematic [10].
Table 1. Transistor aspect ratios of the comparator schematic.
M0
M1
M2
M3
M4
M5
M12
Vbias
Vref
W/L (µm)
6/0.2
6/0.2
3/0.2
3/0.2
2/0.2
6/0.2
2/0.2
0.1 V
0.9 V
W/L (µm)
6/0.2
6/0.2
6/0.2
2/0.2
2/0.2
6/0.2
M6
M7
M8
M9
M10
M11
2.2. The latch circuit
The preferred dynamic latch circuit is depicted in Figure 5. The latch circuit either transfers the input logic
level to the output (during which the clock signal is kept at logic ‘1’) or keeps the last output logic level (during
which the clock signal is kept at logic ‘0’), depending on the controlling clock signal.
DC Response
1000
750.0
out
input
500.0
V (mV)
Vdd
M1
clk
Wp
M1 = M2 =
250.0
0
0.2 μ m
Lp
-500.0
-750.0
-1000
250.0 500.0 750.0 1000
-1000 -750.0 -500.0 -250.0 0
V(in) (E-3)
Figure 4. The DC analysis result of the comparator.
6μ m
M2
ref
-250.0
1974
=
in
out
out
M3
M3 = M4 =
M4
Wn
Ln
=
2μ m
0.2 μ m
-Vdd
Figure 5. The dynamic latch circuit.
AYTAR et al./Turk J Elec Eng & Comp Sci
In other words, clock ‘0’ means a conversion phase and clock ‘1’ means a sampling phase. The control
between the analog and digital parts of the ADC is obtained in this way [1].
In fact, it is not possible to convert an analog input level to its digital value instantly. A very small time
period is necessary for the digital part to complete its job. Therefore, a dynamic latch circuit usage is inevitable
for a flash ADC design. This time is called the ‘conversion time’, in general, and it is shortest in full-flash ADCs
but is very long for the serial type of ADCs.
2.3. The 1-of-N decoder block
This decoder block converts the so-called thermometer code (TC) obtained from the outputs of the dynamic
latch array to 1-of-N code. In fact, the TC is a good solution for low-resolution and high-speed converters, but
the error rate increases while the resolution and speed increases [11]. The multiplexer-based decoder was also
proposed in the literature [11]. The 1-of-N decoder structure used in the design is shown in Figure 6.
in
out
0
0
0
LATCH
out
1
clk
in
out
0
0
LATCH
in1
out
1
in2
out
0
in1
0
LATCH
out
1
in2 MUX
clk
in
1
in1
out
0
in2
out
1
in1
out
0
in2
out
1
in1
out
0
in2 MUX
1
out
1
S
clk
1
1
S
LATCH
in
out
MUX
clk
1
MUX
out
LATCH
in
out
0
S
clk
in
out
0
S
out
1
LATCH
1
MUX
S
clk
in
S
out
1
in1
out
0
in2
out
LATCH
MUX
1
clk
Figure 6. The conceptual circuit of the 1-of-N decoder block (3-bit case only).
1975
AYTAR et al./Turk J Elec Eng & Comp Sci
Figure 7 shows the transmission gate-based multiplexer circuit used in the decoder. In the decoder, 2 ×
1 multiplexers are used. The multiplexer inputs are tied to their corresponding latch outputs, where both the
normal and inverted forms of the TC segments are available at the same time.
Normal latch output terminals are connected to the 1st inputs of the multiplexers, while the inverted
outputs are connected to the 2nd inputs. For a specific decoder row, the output of the upper row latch block
is also tied to the lower row multiplexer’s select input, as seen in Figure 6. As a result, the TC is converted to
1-of-N code.
M1
A
M2
out
Select
M1
B
M2
Vdd
M1
Select
M2
M1 =
M2 =
Wp
Lp
Wn
Ln
=
=
6 μm
0.2 μm
2 μm
0.2 μm
Figure 7. The 2 × 1 multiplexer circuit.
2.4. Fat-tree encoder structure
As is known, the TC is obtained from analog comparator array outputs in flash ADC designs. Programmable
logic array–read-only memory, exclusive OR encoder, or Wallace-tree encoder structures are generally used to
convert TC to binary code [12,13].
The ADC designs advertised in [12–14] suggest the usage of the fat-tree encoder structure instead, which
results in a higher sampling rate and lower power consumption due to a reduction in the number of logic gates
required for the digital part of ADCs. Therefore, a fat-tree encoder structure is preferred in our case study,
as well, which can be seen in Figures 8a, 8b, and 8c. The OR blocks in our encoder are designed using static
CMOS technology.
Note that in Figure 8c, the inputs labeled as I0 to I31 are the outputs obtained from the 1-of-N decoder
block to be applied to the fat-tree encoder inputs. The inputs in Figures 8a and 8b are connected to the
corresponding input/output nodes in Figure 8c. As a result, 5 bits of binary output data from bit0 to bit4 are
obtained.
3. Simulation results
The Cadence IC5141 design platform and North Carolina State University’s design kit with a 0.18-µ m CMOS
library are used during the design and simulations. A ramp-shaped analog input signal of between –0.45 V and
1976
AYTAR et al./Turk J Elec Eng & Comp Sci
0.7 V, at a 10 MHz frequency, is applied to the ADC input for transient analysis. The clock frequency applied
to the latch block is 5 Gs/s. Figure 9 shows the DC analysis results and Figure 10 shows the corresponding
linearity plots [differential nonlinearity (DNL) and integral nonlinearity (INL)]. To be able to obtain the linearity
plots, the DC results are transferred to a MATLAB platform, as used in [15].
a15
a14
a13
b7
b6
a12
b5
b4
a11
a10
b3
b2
a9
a8
bit0
a7
a6
bit1
b1
b0
c3
c2
a5
a4
bit2
c1
c0
a3
a2
d1
d0
a1
a0
bit3
(b)
I1
I0
a0
b0
I3
I2
I5
I4
a1
b1
a2
a3
I7
I6
a4
I9
I8
I11
I10
I13
I12
a5
b2
c1
b3
a6
a7
I15
I14
I25 a12
I24
a11
I23
I22
a10
I21
I20
a9
I19
I18
a8
I17
I16
b5
b6
a13
I27
I26
I29
I28
b4
c2
c3
b7
a14
a15
I31
I30
c0
d0
d1
bit4
(a)
(c)
Figure 8. Fat-tree encoder schematic for the 5-bit case.
Figures 11 and 12 show the transient analysis results including DNL and INL plots for a 10-MHz input
signal under digital clock frequency of 5 Gs/s. According to the transient simulation results, the worst-case INL
is –0.65 least significant bits (LSB) and the worst-case DNL is –0.3 LSB.
Moreover, a 5 Gs/s clock is kept constant but the input frequency is changed. The corresponding DNL
and INL plots with respect to the input frequency are also examined. In Figures 13 and 14, only the worst-case
1977
AYTAR et al./Turk J Elec Eng & Comp Sci
V (mV)
linearity error values are plotted for specific frequency values. Additionally, the average current values drawn
by the partial system blocks are tabulated in Table 2. As was expected, the largest current is drawn by the
comparator block (a total of 31 comparators), which is about 10 mA. Table 3 shows the transistor count of
the designed system blocks. Figure 15 shows the reconstructed output signal for an analog ramp input signal
without filtering.
DC Response
1000 in
V (mV)
-1000
1000 bit0
V (mV)
-1000
1000 bit1
V (mV)
-1000
1000 bit2
V (mV)
-1000
1000 bit3
V (mV)
-1000
1000 bit4
-1000
-1000
-750.0
-500.0
-250.0
0
250.0
dc(mV) (E-3)
500.0
750.0
Figure 9. The 5-bit DC simulation results.
DNL [in LSB]
INL [in LSB]
DNL and INL of 5-bit converter (from histogram testing)
0.1
0.05
0
-0.05
-0.1
0.1
0.05
0
-0.05
-0.1
avg = -2.2e-017, std.dev = 0.014, range = 0.035
5
10
15
bin
20
25
30
25
30
avg = 0.0035, std.dev = 0.012, range = 0.048
5
10
15
bin
20
Figure 10. DNL and INL plots based on the DC simulations.
Table 2. The average current values of the partial system blocks.
Block name
Comparator array
Latch array plus 1-of-N decoder
Fat-tree encoder block
1978
Current values
9.927 mA
5.291 mA
430.6 µA
1000
AYTAR et al./Turk J Elec Eng & Comp Sci
V (mV) V (mV) V (mV) V (mV) V (mV) V (mV)
DC Response
1000 in
-1000
1000 bit0
-1000
1000 bit1
-1000
1000 bit2
-1000
1000 bit3
-1000
1000 bit4
-1000
-1000
-750.0
-500.0
-250.0
0
250.0
dc(mV) (E-3)
500.0
750.0
1000
INL [in LSB]
DNL [in LSB]
Figure 11. Binary output data waveforms for fin = 10 MHz ramp input signal.
0.4
0.2
0
-0.2
-0.4
DNL and INL of 5-bit converter (from histogram testing)
0
-0.2
-0.4
-0.6
-0.8
avg = 0, std. dev = 0.095, range = 0.44
5
10
15
bin
20
25
30
25
30
avg = 0.35, std. dev = 0.21, range = 0.66
5
10
15
bin
20
Figure 12. DNL and INL plots for the fin = 10 MHz/fclk = 5 Gs/s.
8
The worst case INL values [LSB]
The worst case DNL values [LSB]
2.5
2
1.5
1
0.5
0
6
10
7
10
Analog input frequency [Hz]
8
10
Figure 13. Worst-case DNL errors with respect to the
input frequency.
7
6
5
4
3
2
1
0
106
107
Analog input frequency [Hz]
108
Figure 14. Worst-case INL errors with respect to the
input frequency.
1979
AYTAR et al./Turk J Elec Eng & Comp Sci
1000
Transient response
ideal_dac_out
V (mV)
750.0
500.0
250.0
0
-250.0
-500.0
1000
analog_input
V (mV)
750.0
500.0
250.0
0
-250.0
-500.0
0
25.0
75.0
50.0
Time (ns)
100
Figure 15. Reconstructed output signal for an analog ramp input signal.
Table 3. Transistor count of the designed system blocks.
Block name
Comparator array
Latch array
2 × 1 Mux array
Fat-tree encoder
Transistor count
403
208
180
336
4. Conclusion
In conclusion, a 5-bit 5 Gs/s full-flash ADC was successfully designed in 0.18-µ m CMOS technology using
Cadence tools. According to the simulation results, the proposed ADC is highly linear with a worst-case DNL
of 0.3 LSB and INL of 0.65 LSB, and it also has a low power consumption value of 28 mW. The performance
summary and comparison with similar works in the literature were listed in Table 4. Based on the simulation
Table 4. The comparison table.
References
Technology (CMOS)
Resolution
Power supply voltage
Power (mW)
Analog input range
Sampling frequency (Gs/s)
Max INL (LSB)
Max DNL (LSB)
Calibration
Active chip area (mm2 )
1980
Proposed
0.18 µm
5-bit
±0.9 V
28
–0.45 V to 0.7 V
5
–0.65
–0.3
No
0.1
[4]
0.13 µm
5-bit
1.2 V
120
0.8 Vpp
3.2
1.13
1.12
Yes
0.18
[16]
0.18 µm
4-bit
1.8 V
4.80
–
0.7
0.27
0.19
Yes
–
[17]
65 nm
5-bit
1.3 V and 1 V
28.1
0.8 Vpp
5.5
0.33
–0.3
Yes
0.035
[18]
0.18 µm
5-bit
1.8
36
1 Vpp
1.056
0.56
0.32
No
–
AYTAR et al./Turk J Elec Eng & Comp Sci
results, the 2 × 1 Mux-based decoder structure improves the performance in terms of the speed and power
consumption. Moreover, it is also thought that the proposed ADC architecture is attractive for designers from
a design complexity point of view. The layout photo of the complete converter is shown in Figure 16.
As a future work, the performance of the proposed 1-of-N decoder structure will be compared to
alternative types of 1-of-N decoder performances. In addition, further improvements are planned in the encoder
architecture.
Figure 16. The layout photo of the complete converter.
1981
AYTAR et al./Turk J Elec Eng & Comp Sci
Acknowledgment
This study was financially supported by the Kocaeli University Scientific Research Division under Project
Number BAP-2009/40 (Microelectronic Laboratory).
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1982