Download Linear Systems Offers Direct Alternative for Analog Devices MAT01

LS312
SUPER-BETA DUAL
NPN TRANSISTOR
Linear Systems Offers Direct Alternative for Analog Devices MAT01
The LS312 is a monolithic pair of Super-Beta High
Voltage NPN transistors mounted in a single TO-78
package. The monolithic dual chip design reduces
parasitics and gives better performance while ensuring
extremely tight matching. The LS312 is a direct
electrical alternative / equivalent for Analog Devices
MAT01.
The hermetically sealed TO-78 is well suited for hi-rel
and harsh environment applications.
(See Packaging Information).
LS312 Features:
ƒ
Very high gain
ƒ
Tight matching
ƒ
Low Output Capacitance
ƒ
Replacement for Analog Devices MAT01
FEATURES HIGH GAIN TIGHT VBE MATCHING HIGH ft ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential |∆ (IB1 – IB2)|/°C Base Current Differential Change with Temperature hFE1 /hFE2 DC Current Gain Differential ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS MIN. BVCBO Collector to Base Voltage 60 BVCEO Collector to Emitter Voltage 60 BVEBO Emitter‐Base Breakdown Voltage 6.2 BVCCO Collector to Collector Voltage 100 200 hFE DC Current Gain 200 200 VCE(SAT) Collector Saturation Voltage ‐‐ IEBO Emitter Cutoff Current ‐‐ ICBO Collector Cutoff Current ‐‐ COBO Output Capacitance ‐‐ CC1C2 Collector to Collector Capacitance ‐‐ IC1C2 Collector to Collector Leakage Current ‐‐ fT Current Gain Bandwidth Product 200 NF Narrow Band Noise Figure ‐‐ hFE ≥ 200 @ 10µA‐1mA |VBE1 – VBE2 |= 0.2mV TYP. 250MHz TYP. @ 1mA TYP. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 10mA MIN ‐‐ ‐‐ TYP 0.2 0.5 MAX 0.5 2 UNITS mV µV/°C ‐‐ ‐‐ ‐‐ ‐‐ 5 0.3 nA nA/°C ‐‐ 5 ‐‐ % MAX. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 0.25 0.2 0.2 2 2 0.5 ‐‐ 3 UNITS V V V V V nA nA pF pF nA MHz dB CONDITIONS IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V CONDITIONS IC = 10µA, IE = 0 IC = 10µA, IB = 0 IE = 10µA, IC = 02 IC = 10µA, IE = 0 IC = 10µA, VCE = 5V IC = 100µA, VCE = 5V IC = 1mA, VCE = 5V IC = 1mA, IB = 0.1mA IE = 0, VCB = 3V IE = 0, VCB = 30V IE = 0, VCB = 5V VCC = 0V VCC = ±45V IC = 1mA, VCE = 5V IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. TO-78 (Bottom View)
Available Packages:
LS312 in TO-78
LS312 available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
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