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Gallium Arsenide and Silicon FET-type Switches for Repetitive Pulsed Power Applications Xianyue Charles W. b Myles , Andras a Kuthi , Qiong a Shui , and Martin A. a Gundersen Department of Electrical Engineering-Electrophysics, University of Southern California, Los Angeles, CA 90089-0271 b Department of Physics, Texas Tech University, Lubbock, TX 79409-1051 Pulse generators for next generation applications of repetitive pulsed power requiring high power and short pulses (<1microsecond) require fast switching speeds, high repetition rate, high hold-off voltage and high peak and average current capabilities. Presently limitations in peak voltage when rapid rise rate is required (e.g. greater than about 1kV with rise times on the order of nanoseconds) result not only from design constraints, but also from materials physics. Traditional Si MOSFETs tend to be voltage limited, with scaling issues complicated by circuit requirements, and the technology of advanced materials, such as GaAs, SiC, and Diamond have basic unresolved issues. Here, we report an investigation of GaAs and a comparison of some of its properties to those of Si. GaAs is attractive due to its high electron mobility and relatively mature processing technology, but it has uncertainties related to fundamental materials limitations and drift velocity saturation. The purpose of this study is to resolve these fundamental issues, and to determine whether or not the underlying physics supports the development of GaAs-based high voltage, fast rising switches that conduct high peak current. GaAs vs. Si : from Physics to Practical Technology • High electron mobility and large energy band gap ensure that GaAs FET’s are superior and more efficient than Si FET’s in terms of switching speeds and forward voltage drop. • The direct energy band gap of GaAs makes integrated circuits with optoelectronic capabilities can be realized. • The “lock-on” effect at high electric fields (~ 5 kV/cm) limits the high voltage handling capability of GaAs FET’s. Furthermore, the current filaments accompanying this effect greatly reduce the lifetime of such devices. • The absence of a natural oxide for GaAs makes gate drive circuits based on it complicated. • Larger defect concentrations lower the effective mobility of GaAs below the theoretical value. • Packaging issues arise due to the low thermal conductivity of GaAs. Acknowledgements The Pulsed Power Group is grateful for the generous support from the Army Research Office, and the Air Force Office of Scientific Research. Simulations Figures 3 and 4 respectively show the hold-off properties and the switching performance of the simulated devices. In order to compare GaAs- and Si-based switching devices, we use ATLAS, a device simulator, to study a vertical Si MOSFET and a recessed gate GaAs SIT. The GaAs SIT has a higher hold-off voltage (~370 V) than the Si MOSFET (~350 V) with the same drift region width. However, the GaAs SIT yielded a larger leakage current. Source Gate Source Source Gate n+ p well n+ p well Gate n+ p The GaAs SIT has faster turn on / turn off speeds and lower forward voltage drop. Hence, it has better power efficiency. p SI GaAs n- Silicon ◄ Figure 3. Simulation results for drain source current versus drain source voltage for the Si MOSFET and the GaAs SIT considered here. The hold-off voltage can be obtained from the figure. n type GaAs substrate n+ Silicon Drain Drain (b) (a) Figure 1. Cross sectional structure of (a) Si MOSFET and (b) GaAs SIT Figure 1 shows a schematic of the cross sectional structures of the Si MOSFET and the GaAs SIT which we considered. To hold off high voltage, each device has a 30 μm epi-layer as the drift region. The n+ drain regions are doped at n = 3.5 x 1018 cm-3 to form ohmic contacts. To be realistic, a deep donor energy level (0.65 eV below the conduction band minimum), with a defect concentration of 1.6 x 1016 cm-3 was included in the GaAs SIT simulations. Figure 4. Switching properties of the Si MOSFET and the GaAs SIT. The simulation circuit schematic is shown below. Results The specific on-resistance for both the Si MOSFET and the GaAs SIT were obtained. These are 25.4 mΩ·cm2 and 64.2 mΩ·cm2, respectively. Figure 2 shows a plot containing our simulation results and the experimental results from references P. Hadizad, 1992 and G. M. Deboy et al. 1998. The Si-based devices can reach the theoretical limit, even beyond it while there is still an effort to reach the GaAs theoretical limit. A possible way is to apply a junction termination extension to try to reduce the electric field nonuniformity. 2 Introduction log (Specific On-resistance (mOhm-cm )) a a Gu , Figure 2. Theoretical and experimental specific on-resistance, as a function of blocking voltage for GaAs and Si-based switching devices. 4 G Trigger Pulse: Rise time: 2 ns Fall time: 2 ns Pulse length: 8 ns S D DC 100 V R ( drain ) = 500 k V References • M. A. Gundersen, “Research issues for new applications of power modulators”, in Proc. 22nd International Power Modulator Symposium, 1996, p15 GaAs surface SIT "CoolMOS" GaAs SIT simulation Si MOSFET simulation 5 ► Silicon Theoretical Limit 3 GaAs Theoretical Limit 2 1 • G. M. Loubriel, F. J. Zutaverm, W. D. Helgeson, D. L. McLaughlin, M. W. O’Malley and T. Burke, “Physics and Applications of the Lock-on Effect”, in Proc. 8th IEEE International Pulsed Power Conference, 1991, p 33 • P. Hadizad, “A High Voltage GaAs Field-Effect Transistor for Pulsed Switching Applications: The GaAs Static Induction Transistor”, Ph.D. dissertation, Dept. of Electrical Engineering-Electrophysics, University of Southern California, 1992 0 -1 -2 2.0 2.5 3.0 3.5 log (Blocking Voltage (V)) 4.0 • G. M. Deboy, N. Marz, J.-P. Stengl, H. Strack, J. Tihanyi, H. Weber, “A New Generation of High Voltage MOSFETs Breaks the Limit Line of Silicon”, in Proc. International Electron Devices Meeting, 1998, p 683