Download GaAs INFRARED EMITTING DIODE LED55B LED55C LED56

Part No. 08LED55C
GaAs INFRARED EMITTING DIODE
LED55B
LED55C
LED56
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
0.030 (0.76)
NOM
0.255 (6.48)
1.00 (25.4)
MIN
ANODE
(CASE)
0.100 (2.54)
0.050 (1.27)
0.040 (1.02)
1
3
Ø0.020 (0.51) 2X
0.040 (1.02)
SCHEMATIC
45°
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
ANODE
(Connected
To Case)
CATHODE
3
1
DESCRIPTION
The LED55B/LED55C/LED56 are 940 nm LEDs in a narrow angle, TO-46 package.
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
Electronix Express / RSR Electronics • 365 Blair Road, Avenel, NJ 07001 • Tel. 732-381-8777 or 732-381-8020; FAX 732-381-1006 or 732-381-1572
GaAs INFRARED EMITTING DIODE
LED55B
ABSOLUTE MAXIMUM RATINGS
LED55C
LED56
(TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Continuous Forward Current
Forward Current (pw, 1µs; 200Hz)
Reverse Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
IF
VR
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
V
mW
W
NOTE:
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 # steradians.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
Reverse Leakage Current
Total Power LED55B(7)
Total Power LED55C(7)
Total Power LED56(7)
Rise Time 0-90% of output
Fall Time 100-10% of output
www.fairchildsemi.com
(TA =25°C) (All measurements made under pulse conditions)
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
IF = 100 mA
IF = 100 mA
IF = 100 mA
VR = 3 V
IF = 100 mA
IF = 100 mA
IF = 100 mA
!P
"
VF
IR
PO
PO
PO
tr
tf
—
—
—
—
3.5
5.4
1.5
—
—
940
±8
—
—
—
—
—
1.0
1.0
—
—
1.7
10
—
—
—
—
—
nm
Deg.
V
µA
mW
mW
mW
µs
µs
2 OF 4
6/05/01
DS300312
GaAs INFRARED EMITTING DIODE
LED55B
LED55C
LED56
TYPICAL PERFORMANCE CURVES
Figure 1. Power Output vs. Input Current
100
50
20
PULSED
PW = 80 µsec
FORWARD
CURRENT
PO, NORMALIZED POWER OUTPUT
10
5
2
CONTINUOUS
FORWARD
CURRENT
1.0
0.5
NORMALIZED TO
I F = 100 mA
TA = 25°C
0.2
0.1
0.05
0.02
0.01
.001
.002
.005
.01
.02
.05
0.1
0.2
0.5
1.0
2
5
10
IF, FORWARD CURRENT (A)
Figure 3. Forward Voltage vs. Forward Current
10
8.0
6.0
Figure 2. Power Output vs. Temperature
1.4
4.0
2.0
IF, FORWARD CURRENT (A)
PO, NORMALIZED POWER OUTPUT
1.2
1.0
0.8
0.6
0.4
NORMALIZED TO
I F = 100 mA
TA = 25°C
0.2
0.1
.08
.06
.04
0.2
0
1.0
0.8
0.6
0.4
.02
-50
-25
0
25
50
75
100
125
150
.01
TA, AMBIENT TEMPERATURE (°C)
0
1
3
2
4
5
6
7
8
9
10
VF, FORWARD VOLTAGE (V)
Figure 5. Typical Radiation Pattern
100
40
80
RELATIVE OUTPUT (%)
IF, FORWARD CURRENT (mA)
Figure 4. Forward Voltage vs. Forward Current
100
80
60
20
TA = 100°C
25°C
-55°C
10
8
6
4
.9
1.0
1.1
1.2
1.3
1.4
0
-50
1.5
6/05/01
-40
-30
-20
-10
0
10
20
30
40
50
θ - ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
VF, FORWARD VOLTAGE (V)
DS300312
40
20
2
1
60
3 OF 4
www.fairchildsemi.com
GaAs INFRARED EMITTING DIODE
LED55B
LED55C
LED56
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.