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Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
PBYR1645 series
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
GENERAL DESCRIPTION
QUICK REFERENCE DATA
VR = 40 V/ 45 V
k
1
a
2
IF(AV) = 16 A
VF ≤ 0.57 V
PINNING
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
PIN
The PBYR1645 series is supplied
in the conventional leaded SOD59
(TO220AC) package.
tab
SOD59 (TO220AC)
DESCRIPTION
1
cathode
2
anode
tab
cathode
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
PBYR16
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
UNIT
40
45
-
40
45
V
-
40
45
V
Tmb ≤ 116 ˚C
-
40
45
V
square wave; δ = 0.5; Tmb ≤ 131 ˚C
-
16
A
square wave; δ = 0.5; Tmb ≤ 131 ˚C
-
32
A
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
135
150
A
A
-
1
A
-
150
˚C
- 65
175
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
July 1998
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN.
in free air
1
TYP. MAX. UNIT
-
-
1.5
K/W
-
60
-
K/W
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645 series
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Cd
Junction capacitance
IF = 16 A; Tj = 125˚C
IF = 16 A
VR = VRWM
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
July 1998
MIN.
2
-
TYP. MAX. UNIT
0.53
0.55
0.2
27
470
0.57
0.63
1.7
40
-
V
V
mA
mA
pF
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
15
PBYR1645 series
Forward dissipation, PF (W)
PBYR1645
Tmb(max) (C)
127.5
Vo = 0.37 V
Rs = 0.013 Ohms
125 C
D = 1.0
0.5
PBYR1645
Reverse current, IR (mA)
100
10
0.2
10
100 C
135
0.1
75 C
1
5
tp
I
D=
0
50 C
142.5
0.1
Tj = 25 C
t
T
0
tp
T
150
25
5
10
15
20
Average forward current, IF(AV) (A)
0.01
0
Fig.1. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
15
Forward dissipation, PF (W)
PBYR1645
Tmb(max) (C)
127.5
2.8
10
1.9
50
Fig.4. Typical reverse leakage current; IR = f(VR);
parameter Tj
PBYR1645
Cd / pF
10000
Vo = 0.37 V
Rs = 0.013 Ohms
2.2
25
Reverse voltage, VR (V)
a = 1.57
135
4
1000
142.5
5
0
0
100
1
150
15
5
10
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
50
Forward current, IF (A)
10
100
VR / V
Fig.5. Typical junction capacitance; Cd = f(VR);
f = 1 MHz; Tj = 25˚C to 125 ˚C.
PBYR1645
10
Transient thermal impedance, Zth j-mb (K/W)
Tj = 25 C
Tj = 125 C
40
1
30
typ
20
0.1
max
PD
tp
D=
10
T
0
0.01
0
0.2
0.4
0.6
0.8
1
Forward voltage, VF (V)
1.2
1.4
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
July 1998
1us
10us
100us
tp
T
t
1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYR1645
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645 series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1
(2x)
2
0,9 max (2x)
5,08
0,6
2,4
Fig.7. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
5
Rev 1.200