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Transcript
DIODE MODULE Spec.No.SR2-SP-09003 R4 MDM750H65E2 FEATURES Low noise recovery: Ultra soft fast recovery diode. High reverse recovery capability: Super HiRC Structure. High reliability, high durability diodes. Isolated heat sink (terminal to base). CIRCUIT DIAGRAM C(K) C(K) E(A) E(A) o ABSOLUTE MAXIMUM RATINGS (Tc=25 C) Item Symbol Unit MDM750H65E2 o Tj=125 C Repetitive Peak Reverse o Tj=25 C Voltage o Tj=-40 C DC Forward Current 1ms Junction Temperature Storage Temperature Terminals-base Isolation Test Voltage Terminal 1-Terminal 2 Terminals (M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 91N·m VRRM IF IFM Tj Tstg VISO VISO T-T - Forward Voltage Drop Reverse Recovery Time Reverse Recovery Loss A o C C o VRMS N·m (2) Recommended Value 5.50.5N·m ELECTRICAL CHARECTERISTICS Item Symbol Unit Repetitive Reverse Current 6,500 6,500 6,000 750 1500 -40 ~ +125 -50 ~ +125 10,200 (AC 1 minute) 10,200 (AC 1 minute) 10 (1) 6 (2) V IRRM mA VF V trr Err(10%) Err(full) s J/P J/P PACKAGE CHARECTERISTICS Item Symbol Unit Min. Typ. Max. 3.75 - 10 3.8 4.15 0.8 2.4 2.6 75 4.65 1.6 3.0 - Test Conditions o VAK=6,500V, Tj=125 C o IF=750A, Tj=25 C o IF=750A, Tj=125 C VCC=3,600V, IF=750A, L=200nH o Tj=125 C Rg=8.2 (3) Min. Typ. Max. Terminal Resistance Terminal Stray Inductance RCE LsCE m nH - 0.3 42 Thermal Impedance Comparative tracking index Rth(j-c) CTI K/W - 600 Contact Thermal Impedance Rth(c-f) K/W - - Test Conditions per arm per arm 0.017 Junction to case Case to fin (grease=1W/(m・K), 0.007 Heat-sink flatness 50um) Notes:(3) Counter arm; MBN750H65E2 VGE=+/-15V RG value is the test condition’s value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. P1 DIODE MODULE Spec.No.SR2-SP-09003 R4 MDM750H65E2 Ls DUT LLOAD Vcc Rg G/D MBN750H65E2 Fig.1 Switching test circuit Ic Vce Ls= VL ( dIc dt )t=t L t 0 VL tL Fig.2 Definition of stray inductance Vce 0.1Vce Irm 0.5Irm 0.1IF 0 t trr IF -Ic t3 t1 t2 t4 t2 Err(10%)= ∫ IF・Vce dt t1 t4 Err(Full)= ∫ IF・Vce dt t3 Fig.3 Definition of switching loss P2 DIODE MODULE Spec.No.SR2-SP-09003 R4 P3 MDM750H65E2 STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS 6 1500 TYPICAL 【Conditions】 TYPICAL VGE=±15V、IF=750A Vcc=3600V、Ls≒200nH、Tj=125℃ Inductive load Vce 0.1Vce 5 Irm Tj=25oC 0.5Irm 0.1IF 0 t trr IF Reverse Recovery Loss , Err (J/pulse) -Ic Tj=125oC Forward Curent , IF (A) 1000 500 t9 4 t11 t12 t10 t12 Err(10%)= ∫ IF・Vce dt t11 t10 Err(Full)=∫ IF・Vce dt t9 3 Err(full) Err(10%) 2 1 0 0 0 1 2 3 4 5 6 7 8 0 5 10 Forward Voltage, VF(V) 15 20 25 Gate Resistance, RG (Ω) Recovery Loss vs.Gate Resistance 6 2 【Conditions】 Irm 1.8 0 t -Ic t9 t11 Reverse Recovery Time, trr (μs) Reverse Recovery Loss , Err (J/pulse) trr IF -Ic t12 t10 t12 4 0.5Irm 0.1IF 0 1.6 t trr IF Vce 0.1Vce Irm 0.5Irm 0.1IF TYPICAL VGE=±15V、Rg(on)=8.2Ω Vcc=3600V、Ls≒200nH、Tj=125℃ Inductive load Vce 0.1Vce 5 【Conditions】 TYPICAL VGE=±15V、Rg(on)=8.2Ω Vcc=3600V、Ls≒200nH、Tj=125℃ Inductive load Err(10%)=∫ IF・Vce dt Err(full) t11 t10 Err(Full)= ∫ IF・Vce dt t9 3 Err(10%) 2 t9 1.4 t11 t12 t10 t12 Err(10%)=∫ IF・Vce dt t11 t10 1.2 Err(Full)= ∫ IF・Vce dt t9 1 0.8 0.6 0.4 1 0.2 0 0 0 250 500 750 1,000 1,250 Forward Current , IF(A) Recovery Loss vs.Forward Current 1,500 0 250 500 750 1,000 1,250 1,500 Forward Current , IF(A) Reverse Recovery Time vs.Forward Current DIODE MODULE Spec.No.SR2-SP-09003 R4 MDM750H65E2 RecSOA Conditions: Ls200nH, Vcc4400V, IF1500A, VGE=-15V, Rg(on) of across IGBT , VGE of across IGBT =±15V, -40oCTc125oC, Conduction pulse width of diode 30s 1600 1400 1200 -IF [A] 1000 800 600 400 200 0 0 1000 2000 3000 4000 5000 6000 7000 Anode-cathode voltage [V](at chip level) RecSOA TRANSIENT THERMAL IMPEDANCE Transient thermal impedance : Zth(j-c) [K/W] Maximum Value 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 Time : t [s] Transient Thermal Impedance Curve 10 P4 DIODE MODULE Spec.No.SR2-SP-09003 R4 MDM750H65E2 48.5+1.0/-0.5 OUTLINE DRAWING Unit in mm Weight: 1050(g) Material declaration Please note the following materials are contained in the product, in order to keep product characteristic and reliability level. Material Contained part Lead (Pb) and its compounds Solder P5 DIODE MODULE Spec.No.SR2-SP-09003 R4 P6 MDM750H65E2 HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department staff. 4. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi Power Semiconductor Device, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written permission of Hitachi Power Semiconductor Device, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives that is located “Inquiry” portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi-power-semiconductor-device.co.jp/en/