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SIDDHARTH INSTITUTE OF ENGINEERING &TECHNOLOGY:: PUTTUR
ELECTRONICS & COMMUNICATON ENGINEERING
RADIO FREQUECY INTEGRATED CIRCUITS (RFIC)
QUESTION BANK
UNIT -1
INTRODUCTION RF SYSTEMS
1. A) Give the RF System importance in Communications write in detail.
[CO1 [L1] [5M]
B) In Super heterodyne receiver what is the function of RF amplifier?
[CO1] [L1][5M]
2. A) Discuss the basic Architectures of the RF System in detail.
B) Why the shape is required in RF design? What is the importance?
3. A) In RF System what is the transmission media give the details.
[CO1] [L2][5M]
[CO1] [L2][5M]
[CO2] [L3][5M]
B) Get the idea behind of reflection coefficient (Γ) in transmission media.
4. A) The maximum power transfer in networks is deciding the distribution of power to other networks
give the details on it.
[CO2] [L3][5M]
B) With the network can maximum power is transferred? Prove it.
5. A) Write about RLC Networks with network examples
B) Write about the parallel RLC tank circuits.
6. A) What is matching in RF Systems? Give the introduction of matching
B) The π –matching working
[CO2] [L3][5M]
[CO2] [L2][5M]
[CO2] [L2][5M]
[CO2] [L4][5M]
[CO2] [L4][5M]
7. Write about T-matching circuit in RF Systems
[CO2] [L4][5M]
8. Draw and explain in detail about IC interconnects of capacitors.
[CO2] [L5][5M]
9. Write about interconnects of resistors
[CO2] [L2][5M]
10. A) What is Square spiral Inductors explain in detail.
[CO1] [L2][2M]
B) Discuss about Hallow Spiral inductors
[CO1] [L2][2M]
C) Write about series RLC circuit.
[CO1] [L2][2M]
D) What is 'Q' in RF SYSTEMS?
[CO2] [L1][2M]
E) What are the shapes of RF basic architectures explain it?
[CO1] [L2][2M]
TWO MARKS QUESTIONS
1)
2)
3)
4)
5)
What is RF System?
[CO1] [L1][2M]
What are the shapes are there to design RF System?
[CO2] [L2][2M]
What is the role of RF amplifier in receivers?
[CO1] [L2][2M]
Give the examples of RF design circuits.
[CO1] [L2][2M]
Passive IC components having interconnections of capacitors give that cases of interconnection of
capacitors
[CO1] [L2][2M]
6) Explain the Hallow shape interconnection of Inductors
[CO1] [L2][2M]
7) Why need Quality factor ‘Q’ in RF system?
[CO1] [L2][2M]
8) Discuss the Series RLC network with circuit.
[CO2] [L2][2M]
9) Get the idea of Parallel RLC network in RF circuits
[CO1] [L2][2M]
10) What is matching in networks?
[CO2] [L2][2M]
11) What is the importance of Maximum power transfer theorem in network? [CO1] [L2][2M]
12) What is the importance of reflection coefficient (Γ)?
[CO2] [L3][2M]
13) In super heterodyne receiver what is the function of RF amplifier
[CO1] [L2][2M]
14) What are the types of Resistors in interconnections?
[CO1] [L2][2M]
15) Define skin depth in RF Systems
[CO1] [L1][2M]
16) Write short notes on π- matching networks
[CO1] [L2][2M]
17) Write short notes on T- matching networks
[CO1] [L2][2M]
18) What is Square spiral inductor explain it?
[CO1] [L2][2M]
19) What is Hallow spiral inductor explain it?
[CO1] [L2][2M]
20) Mention the advantages of RF Systems
[CO1] [L3][2M]
SIDDHARTH INSTITUTE OF ENGINEERING &TECHNOLOGY:: PUTTUR
ELECTRONICS & COMMUNICATON ENGINEERING
RADIO FREQUECY INTEGRATED CIRCUITS (RFIC)
QUESTION BANK
UNIT -1
INTRODUCTION RF SYSTEMS
1. In the following which is not discipline to design RF Circuit.
[
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a) Random signals b) CAD Tools c) Time constant d) Microwave theory.
2. In simple RF Communications Which amplifier are used
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a) Single tuned amplifier b) stagger tuned amplifier c) Multistage amplifier d) Power amplifier
3) To design RF Circuit which is the shape is used
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a) Pentagon b) Hexagon c)triangle d) Rectangle
4) What is the value of Centre frequency in Generic RF transceiver
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a) fc = 3.4 GHz b) 2 GHz c) 2.4 GHz d) 1.4 GHz
5) In parallel RLC tank circuit the quality factor can be find as
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a) Q = ω (Energy stored)/ (Power dissipated) b) Q = (Energy stored)/(Average Power dissipated)
c) Q = ω (Energy stored)/ (Average Power dissipated) d) Q = ω(Energy stored )/(Power dissipated)
6) The average power can be found as
[
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2
2
2
2
2
a) Pavg = I PK R b) Pavg = 1/2 ( I PK R ) c) Pavg = 1/2 ( I PK R ) d) Pavg = 1/2 ( I PK R )
7) Characteristic impedance of the parallel RLC network
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a) Z0= L/C b) Z0 = √ (L/C) c) Z0 = √ ( LC ) d) Z0 = ( LC )
8) The total energy stored in a parallel RLC network
[
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2
a) Etotal = 1/2 C ( I PK R )
b) Etotal = 1/2 ( I PK R )
2
c) Etotal = 1/2 C ( I PK R )
d)Etotal = 1/2 C ( I PK ) 2
9) What is the quality factor for RLC parallel network?
[
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a) Q = ω0RC b) Q = ω0 / RC c) Q = ω0C d) Q = ω0R
10) In maximum power transfer theorem
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2
2
2
2
2
2
2
2
a) │ VR │/ ( RL ) = │VS│ / ( ( RL +RS ) +(XL +XS) ) b)│ VR │ / ( RL ) = RS │VS │ / ( ( RL +RS ) +(XL +XS) )
c) │ VR2 │ / ( RL ) = RS/ ( ( RL +RS )2
d) │ VR2 │ / ( RL ) = RL │VS │2 / (XL +XS)2
11) In parallel RLC network what is ‘Q’
a) Q = ω0 LS / Rs b) Q = LS / Rs c) Q = RS / Ls d) Q = ω0 RS / Ls
12)In parallel RLC network what is LP
a) LP = (Q2 +1) / Q2 b) LP= LS [(Q2 +1) / Q2] c) LP = LS [(Q2 +1) / Q ] d) LP = LS (Q2 +1)
13) In parallel RLC network what is RP
a) RP = (Q2 +1 ) b) RP = RS (Q +1 ) c) RP = RS (Q2 +1 ) d) RP = RS
14) In parallel RLC network what is CP
a) CP = Cs( (Q ) / (Q2 +1 ))
b) CP = Cs ( (Q2 ) / (Q +1 ))
c) CP = ( (Q2 ) / (Q2 +1 ) )
d) CP = Cs ( (Q2 ) / (Q2 +1 ) )
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15) In L- matching circuits what is the value of RP
a) RP = LS / C b) RP = ( 1/Rs ) (LS / C) c) RP = ( 1/Rs ) ( C/ LS)
d) RP = ( C/ LS)
16) In L- matching circuits what is the value of ‘Q’
a) Q = RP / Rs b) Q = Rs / Rp c) Q = √ (Rs / Rp ) d)Q = √ (Rp / Rs )
17) In π – matching circuits value of Q for right-hand L section
a) Qright = √ ( ( RP / RI ) -1 ) b) Qright = √ ( RI / RP)
c) Qright = √ ( ( RP / RI ) +1 ) d) Qright = √ ( RP / RI )
18) In π – matching circuits value of Q for Left-hand L section
a) Qleft = √ ( ( RIN / RI ) +1 ) b) Qleft = √ ( ( RI / RIn ) +1 )
c) Qleft = √ ( ( RI / RIn ) - 1 ) d) Qleft = √ ( ( RIn / RI ) +1 )
19) In π – matching circuits overall network Q is find by
a) Q = √ ( ( RIn / RI ) -1 ) - √ ( Rp / RI ) -1
b) Q = √ ( ( RIn / RI ) -1 ) + √ ( Rp / RI ) -1
c) Q = √ ( ( RI / RIn ) -1 ) - √ ( Ri / Rp ) -1
d) Q = √ ( ( RI / RIn ) -1 ) + √ ( Ri / Rp ) -1
20) In π – matching circuits the total inductance is found
a) L1 + L2 =( R I /ω0 )
b) L1 + L2 = ( Q /ω0 )
c) L1 + L2 = Q ( R I /ω0 ) d) L1 + L2 = Q R I
21) In π – matching circuits the value of capacitor ‘ C1’ is found
a) C1 = Qleft / RIn b) C1 = Qleft / ω0 c) C1 = Qleft / ω0RIn d) C1 = 1 / ω0RIn
22) In π – matching circuits the value of capacitor ‘ C2’ is found
a) C2 = Qright / ω0Rp b) C2 = Qright / Rp c) C2 = Qright / ω0 d) C2 = Qright / 2Rp
23) What is the value of image resistance in π – matching circuits
a) RI= (RIn + Rp)2 / (Q)2
b) RI = (√RIn + √Rp)2 / (Q)2
c) RI= RIn - Rp / (Q)2 d) RI = (√RIn - √Rp)2 / (Q)2
24) In T – matching circuits overall network Q is find by
a) Q = √ ( ( RI / RIN ) +1 ) + √ ( RI / RS ) +1 b) Q = √ ( ( RI / RIN ) +1 ) - √ ( RI / RS ) +1
c) Q = √ ( ( RI / RIN )) + √ ( RI / RS ) d) Q = √ ( ( RIn / RI ) ) + √ ( RIn / RS )
25) In T-match circuits the capacitance can be calculated as
a) C1 + C2= Q / ω0 b) C1 + C2 = Q / RI c) C1 + C2 = Q / ω0 RI d)C1 + C2 = 1 / ω0 RI
26) What is the value of ‘ L1’ in T-match circuits
a) L1 =( QleftRIn ) / ω0 b) L1 =( Qleft ) / ω0 c) L1 =( QleftRIn ) / ω0 Rs d) L1 =( Qleft ) / Rs
27) What is the value of ‘ L2’ in T-match circuits
a) L2 =( Q right ) / ω0 b) L2 =( Q right ) / Rs c) L2 =( Q right ) / ω0 Rs d) L2 =( Q right ) Rs / ω0
28) What is the Yuan’s capacitance value
a) CYUAN = ε [ (W/H) - ( ( 2π)/ ( ln [ 1 + ( 2H/T) ( 1 + √ 1+ T/H )) + T/2H ]
b) CYUAN = ε [ (W/H) - ( ( 2π)/ ( ln [ 1 + ( 2H/T) ( 1 + √ 1+ T/H )) - T/2H ]
c) CYUAN = ε [ (W/H) + ( ( 2π)/ ( ln [ 1 + ( 2H/T) ( 1 + √ 1+ T/H )) + T/2H ]
d) CYUAN = ε [ (W/H) + ( ( 2π)/ ( ln [ 1 + ( 2H/T) ( 1 + √ 1+ T/H )) - T/2H ]
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29) What is Sakurai capacitance formula
[
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0.22
0.22
a) Csakurai = ε [ (W/H) + (0.15/H) + 2.8 (T/H)
] b) Csakurai = ε [ ( W/H) - ( 0.15/H) + 2.8 (T/H)
]
0.11
0.11
c) Csakurai = ε [ ( W/H) - ( 0.15/H) - 2.8 ( T/H)
] d) Csakurai = ε [ (W/H) +( 0.15/H) + 2.8 ( T/H)
]
30) What is the value of capacitance for w = 1.36 , H = 1.65 and T = 0.8 under Sakurai method [
]
a)0.145 b) 0.245 c) 0.115 d) 0.135
31) What is the value of capacitance for w = 1.36 , H = 1.65 and T = 0.8 under Yuan’s method [
]
a) 0.124 b) 0.134 c) 0.234 d) 0.114
32) What is the value of capacitance for w = 2.38 , H = 0.87 and T = 0.3 under MF method
[
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a) 0.119 b) 0.290 c) 0.190 d) 0.120
33) What is the value of capacitance for w = 2.38 , H = 0.87 and T = 0.3under Yuan’s method [
]
a) 0.172 b) 0.142 c) 0.152 d) 0.132
34) What is the value of capacitance for w = 2.38 , H = 0.87 and T = 0.3
[
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a) 0.175 b) 0.195 c) 0.1856 d) 0.285
35) Average function for capacitance load of a single wire between two conducting planes can be calculated as
[
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n
n
n
a) f ( x1 , x2 ) = [( x1 + x2 ) /2 ] b) f ( x1 , x2 ) = [( x1 + x2 ) /2 ]
c) f ( x1 , x2 ) = [( x1n + x2 n ) /2 ]n d) f ( x1 , x2 ) = [( x1n + x2 n ) /2 ]1/n
36) under wire sandwiched between two conducting planes method find the capacitance value under Sakurai
method
[
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a)0.458 f F/ µm b) 0.268 f F/ µm c) 0.468 f F/ µm d) 0.368 f F/ µm
37) What is the formula to find the Single capacitance under three adjacent wires over a single planes
[
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a) Csingle = ε [ (1.15w/H) – 2.8 (T/H)0.222]
b) Csingle = ε [ (1.25w/H) + 2.8 (T/H)0.111]
c)Csingle = ε [ (1.15w/H) + 2.8 (T/H)0.222]
d) Csingle = ε [ (1.15w/H) – 2.8 (T/H)0.111]
38) What is the standard capacitance formula?
a) C = ε (W/H) b) C = ε (H/W) L c)C = ε (H/W)
[
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[
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[
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d) C = ε (W/H) L
39) What is 'n ' value for to design a square spiral inductor
a)n = [ (p)/ (1.2 x 10-6 )]3 b) n = [ (p)/ (1.2 x 10-6 )]3
c) n = [ (L)/ (1.2 x 10-6 )]3 d) n = [ (p)/ (1.2 x 10-6 )]1/3
40) In model on-chip spiral inductor what is 'RS'
a) RS = [ L / (W . σ (1+ e -(t/δ)
b) RS = [ L / (W . σ (1- e -(t/δ) )
c) RS = [ L / (W . σ (1+ e (t/δ)
d) RS = [ L / (W . σ (1 - e (t/δ) )
SIDDHARTH INSTITUTE OF ENGINEERING &TECHNOLOGY:: PUTTUR
ELECTRONICS & COMMUNICATON ENGINEERING
RADIO FREQUECY INTEGRATED CIRCUITS (RFIC)
QUESTION BANK
UNIT -2
A REVIEW OF MOS DEVICE PHYSICS
1. a. Describe the operation of MOSFET
b. Explain link between lumped and distributed regimes
2. Illustrate how short circuit constants (SCTs) techniques used to estimate the bandwidth of linear
network.
3. Derive expression for overall rise time of systems in cascade using rise time addition rule.
4. a. Describe how shunt peaked amplifier can enhance the bandwidth of the system.
b. Design the shunt-series amplifier to enhance bandwidth.
5. a. Illustrate the operation of n-channel MOSFET with suitable diagrams.
b. Derive expression for drain current in linear region and saturation region
6. Describe the delay of systems in cascade in terms of moments of impulse response.
7. Illustrate how an open circuit time constants (OCTs) technique used to estimate the bandwidth of
linear network.
8. Illustrate Schmitt chart to estimate impedance.
9. Illustrate the following a. Delay of systems in cascade
b. Rise time of systems in cascade
10. Illustrate zeros as bandwidth enhancers.
TWO MARKS QUESTIONS
1. Explain “Conductance modulation” in MOSFET
2. Distinguish long channel and short channel MOSFET
3. Explain important regimes of operating frequency.
4. Derive driving point impedance of ladder network
5. Brief the bandwidth estimation techniques
6. Draw the circuit for shunt peaked amplifier
7. Draw the circuit for shunt-series amplifier
8. Define rise time.
9. Define delay of the cascading system.
10. Describe importance of feedback in broadband amplifier.
11. Write the equation drain current in long channel MOSFET
12. Write the equation drain current in short channel MOSFET
13. Explain open circuit time constants (OCTs) technique
14. Explain short circuit constants (SCTs) techniques
15. Define second equation (Gauss 's law)
16. Define Ampere's law.
17. Characteristic impedance of a lossy transmission line.
18. Write the equation for propagation constant.
19. Define reflection coefficient in terms of Z0 and ZL
20. Define propagation constant.
SIDDHARTH INSTITUTE OF ENGINEERING &TECHNOLOGY:: PUTTUR
ELECTRONICS & COMMUNICATON ENGINEERING
RADIO FREQUECY INTEGRATED CIRCUITS (RFIC)
QUESTION BANK
UNIT -2
A REVIEW OF MOS DEVICE PHYSICS
Objective Questions
1. MOSFET is a ________ controlled device
A. Voltage
B. Current
C. Power
B. Low
C. Medium
B. High
C. High
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D. None
3. Short channel is actually ____ electric field
A. Medium
]
D. None
2. Long channel is actually ____ electric field
A. High
[
D. None
4. The primary high-field effect is_______
A. Frequency modulation B. Current Saturation C. Voltage Saturation D. Velocity saturation
5. In long-channel devices, the saturation drain current is corresponding to ___ of the channel.
A. Pinch-off. B. Vt C. Carrier velocity
D. None
6. In short-channel devices, the saturation drain current is corresponding to __of the channel.
A. Pinch-off.
B. Vt
C. Carrier velocity
D. None
7. _____distinguishes "long-channel" from "short-channel".
A. Electric field strengths.
B.Vgs
C.Vds
D.None
8. Kirchhoff's voltage and current " laws" are used to approximate_____ regime
A. Lumped
B.Distributed
C. Both A and B
D. None
9. _________ parameter descriptions of circuits is used for ICs.
A. Distributed
B. Lumped
C. Both A and B
D. None
10. Net magnetic charge would cause________ in the magnetic field
A. Convergence
B. Curl
C. Divergence
D. None
11. Changing magnetic field causes _________ in the electric field.
A. Convergence
B. Curl
C. Divergence
12. Reduction of "parasitics" leads to ______ bandwidth
D. None
A.Infinite
B.Decrease
C. Increase
D. Zero
13. In ladder network the ratio of Zin to R is known as _______
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20. Most of RF instruments and coaxial cables have standardized impedances of either __ohms [
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A. Golden ratio
B. Golden section
C. A or B
D. None
14. The characteristic impedance Zo of infinite transmission line
A. C / L
B. √LC
C. √L/C2
D. √L/C
15. _____tells us the ratio of voltage to current at anyone point in an infinitely long line.
A. Reflection coefficient B. Propagation constant C. Characteristic impedance D. None
16. _________ quantities the line's attenuation properties.
A. Reflection coefficient B. Propagation constant C. Characteristic impedance D. None
17. Propagation constant y=
A. √Z/Y
B. √Z-Y
C. √Z+Y
D. √ZY
18. The point Γ= - I in Schmitt chart corresponds to ____ resistance (or reactance).
A. Infinite
B. Minimum C. Maximum
D. Zero
19. The point Γ = I in Schmitt chart corresponds to resistance (or reactance.
A. Infinite
B. Minimum
A. 75 or 100
C. Maximum
B. 10 or 40
D. Zero
C. 50 or 75
D. 100 or 75
21. Propagation constant γ =
A. α-jβ
B. α+jβ
C. α/jβ
B. Minimum
C. Maximum
B. Minimum C. Maximum
B.SCTs
C. Both A and b
B. Series Peaking
C. Both A and B
B. "zero value"
C. Both A and B
B. OCTs
[
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D. None
27. _____ identifies which elements are responsible for bandwidth limitation.
A. SCTs
]
D. None
26. The method of open-circuit time constants OCTS is also known as ____time constants.
A. Infinite value
[
D. None
25. A technique that satisfied requirement of large band width at low cost is known as ___
A. Shunt peaking
]
D. Zero
24. At lower frequencies ___ is a powerful intuitive aid in the design of high-BW amplifiers.
A. OCTs
[
D. Zero
23. If the load impedance equals the characteristic impedance of the line, Γ=
A. Infinite
]
D. α2+jβ
22. Since the attenuation is ________ at all frequencies, a lossless line has no bandwidth limit.
A. Infinite
[
C. Both A and B
D. None
28. _____ is only the model that appropriate to high-frequency regime.
A. SCTs
B. OCTs
C. Both A and B
B. OCTs
C. Both A and B
B. Inductors
C. Resistors
B. Product
C. Difference
B. Time Delay
C. Bandwidth
B. Time Delay
C. Bandwidth
B. Decrease C. Stable
B. 1.1 RC
C. 10 RC
B. Poles
C. Both A and B
B. Negative
C. Both A and B
B. Two-port
C. Both A and B
B. Narrow
C. Zero Broader
B. Minimum
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D. None
40. For perfect matching, the reflection coefficient Γ=______
A. Infinite
]
D. None
39. Shunt-series amplifier can be used to achieve ________ bandwidth
A. Zero
[
D. None
38. Shunt peaking uses _________ network
A. One-port
]
D. None
37. An alternative approach to design broadband amplifiers is to use ______ feedback
A. Positive feedback
[
D. 2.2 RC
36. _____ can be used to enhance the bandwidth
A. Zeroes
]
D. None
35. trise= ______
A. RC
[
D. None
34. Addition rule may be used to _________ the limits of instrumentation.
A. Extend
]
D. None
33. Second moment of the impulse response defines the____
A. Rise time
[
D. None
32. First moment of the impulse response defines the____
A. Rise time
]
D. All
31. Overall delay of a cascade of systems is simply the ____ of the individual delays.
A. Sum
[
D. None
30. SCTS are concerned only with those________ that limit low-frequency gain.
A. Capacitors
]
D. None
29. _____ is only the model that appropriate to low-frequency regime.
A. SCTs
[
C. Maximum
D. Zero
SIDDHARTH INSTITUTE OF ENGINEERING &TECHNOLOGY:: PUTTUR
ELECTRONICS & COMMUNICATON ENGINEERING
RADIO FREQUECY INTEGRATED CIRCUITS (RFIC)
QUESTION BANK
UNIT -3
1. Define Attenuation and Show formally that the noise figure of a resistive attenuator is equal to its
attenuation.
[L1][CO.][10M]
2. a) Derive a formula for the overall noise figure of the system shown below. Here, each noise factor
F is computed with respect to output Impedance of the previous stage. Furthermore, each power
gain G is the available power gain.
[L3][CO.][5M]
b) From your formula what do you deduce about the relative contributions to noise figure of earlier
versus later stages?
[L4][CO.][5M]
3. Explain under what condition one may add noise source in root sum squared fashion. Derive more
general addition law.
[L4][CO.][10M]
4. Derive the general expression for the noise bandwidth of a second order LPF. Using your formula,
verify the critical damped second order filter has the noise bandwidth that is 1.22 times of -3dB
bandwidth.
[L3][CO.][10M]
5. (a)Write about thermal noise in MOSFET’s
[L1][CO.][5M]
(b) Write short notes on Noise Factor.
[L1][CO.][5M]
6. What are different LNA topologies, Explain
[L1][CO.][10M]
7. What is meant by noise? Explain in detail different types of noise.
[L1][CO.][10M]
8. What are the different Mixer Characteristics? Explain.
[L2][CO.][10M]
9. Write about (i) Single – balanced Multiplier based Mixer
[L1][CO.][5M]
(ii) Sub Sampling Mixer
[L1][CO.][5M]
10. (a) What is meant by noise figure? Give its expression.
[L2][CO.][2M]
(b) What is the purpose of the LNA?
[L2][CO.][2M]
(c) What are the commonly methods used for evaluating large signal performance?
[L1][CO.][2M]
(d) List the intrinsic MOS noise parameters.
[L1][CO.][2M]
(e) What is a Mixer and what is its need?
[L2][CO.][2M]
TWO MARKS QUESTIONS
1. What is meant by noise and what are its different types?
[L1][2M]
2. What is meant by thermal noise?
[L1] [2M]
3. What is meant by flicker noise?
[L1] [2M]
4. What is meant by noise figure? Give its expression.
[L2] [2M]
5. What is the purpose of the LNA?
[L4] [2M]
6. What are LNA topologies?
[L1] [2M]
7. Draw the circuit diagram of single-ended LNA.
[L1] [2M]
8. Draw the circuit diagram of differential LNA.
[L1] [2M]
9. List the intrinsic MOS noise parameters.
[L1] [2M]
10. Give the expressions of intrinsic MOS noise parameters.
[L1] [2M]
11. Give the relation between power noise versus noise match.
[L2] [2M]
12. What are the commonly methods used for evaluating large signal performance?
[L1] [2M]
13. Give the relationship between 1-dB Compression and IP3 Points.
[L2] [2M]
14. What is the need for mixer?
[L4] [2M]
15. What is Mixer Noise?
[L1] [2M]
16. What are spurs?
[L1] [2M]
17. What is the purpose of LO in a mixer?
[L2] [2M]
18. What are the different multiplier based mixers?
[L1] [2M]
19. What is the need of subsampling mixers?
[L2] [2M]
20. What are the different types of subsampling mixers?
[L1] [2M]
SIDDHARTH INSTITUTE OF ENGINEERING &TECHNOLOGY:: PUTTUR
ELECTRONICS & COMMUNICATON ENGINEERING
RADIO FREQUECY INTEGRATED CIRCUITS (RFIC)
QUESTION BANK
UNIT -3
Objective Questions
1. If a system as noise input of 3.5 times N through a gain of 1000. The output will be __.
A. 3500N
B. 35000N C. 350N D. 35N
2. Equation of low noise amplifier __________.
A. a/n1-ns B. a/n1 C. a/n1+ns D. a/ns
3. Using maximum power transfer theorem then the possible voltage occurs at __.
A. antenna
B. power amplifier C. output D. input
4. The maximum power transfer theorem rl is equal to___________
A. conjugate of rs B. rs C. 0 D. 1
5. Maximum power transfer is not possible when the load is______
A. pure capacitor B. pure inductor C. a or b D. none
6. For a desirable large production of gm a lot of noise is produced from ___.
A. BJT B. antenna C. resistor D. MOSFET
7. Characteristics of an low noise amplifier is __________.
A. large gain B. low noise factor C. linearity D. all the above
8. Noise factor of a system-1 is 2db and system-2 is 10db then the total noise factor is_.
A. 1.5db B. 2.5db C. 3.5db D. 1db
9. In a possible system the mean input voltage2 is proportional to ________
A. gm B. gm2 C. gm-1 D. gm+1
10. Reflection coefficient (┌)=______________.
A. z0-zl/z0+zl B. z0/zl
C. z0+zl/z0-zl D. 1
11.
The Noise in Resistor can be reduced by modelling Resistor ____ with Noise Voltage.
A. Equal B. Greater
C. Series
D. Parallel
12.
The Noise Voltage has a Mean Squared noise voltage of _________ times R.
A. 4kT B. 3kT
C. 6kT
D. 9kT
13.
Noise in a Resistor is produced as a result of ___________.
A. Electron Vibration
B. Excess charge flow
C. Low voltage D. None
14.
Noise at one frequency is __________ of noise at other frequency.
A. Directly Proportional B. Inversely Proportional C. Independent D. None
15.
The Noise in Resistor can be reduced by modelling Resistor __ with Current Source.
A. Equal
B. Greater C. Series
D. Parallel
16.
The Noise present in a Resistor at a given bandwidth df is ___________ times df.
A. 4kTR
B. 3kTR
C. 6kTR D. 9kTR
17.
The mean square noise voltage at the output of RC network is equal to______ .
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A.
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kT+C
B. kT/C
C. kT*C
D. 2kT+C
Noise in a circuit can be reduced by ___________ _ capacitor value.
Increasing B. Decreasing C. keeping constant
D. None
Which terminal(s) in MOSFET contributes to noise?
A. Source
B. Drain
C. Gate
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D. All
20. The total Noise Voltage, Vo2 = ___________?
A. kT+C
B. kT/C
C. kT*C
D. 2kT+C
21. Drain voltage is _____ than the source, when MOSFET is used as a switch.
A. Smaller
B. Larger
C. Equal
D. A or C
22. __________ acts as wire when it consists of full field with electrons.
A. BJT
B. UJT
C. MOSFET
D. CMOS
23. Electron Vibration in MOSFET __________ as temperature increases.
A. Increases B. Remains constant C. Decreases D. None
24. A Noise ________ source does not have any direction.
A. Voltage
B. Current C. Both A&B
D. None
25. The square of Noise Current is __________ to kz.
A. Directly Proportional
B. Inversely Proportional
C. Equal D. Not Equal
26. ___________ cannot be measured directly.
A. Circuit Charge B. Resistive Charge C. Capacitive Charge D. Channel Charge
27. Channel Charge is directly proportional to ________.
A. Transconductance B. Input Voltage
C. Current
D. None
28. The more the Channel Charge __________ is the Transconductance.
A. Smaller
B. Larger
C. Equal
D. None
29. Under the condition of strong inversion & saturation, the channel gets______
A. Decreased
B. Increased
C. Pinched off
D. None
30. Noise Current IN is equal to ________ times gmdf.
A. 5/3
B. 6/3
C. 7/3
D. 8/3
31.
When the input of MOSFET is capacitive, then source gets__________
A. Generated
B. Degenerated
C. Eliminated D. None
32.
If we are moving to an LNA design, then ______ is to be find out or shown.
A. Input Impedance
B. Output Impedance C. Characteristic Impedance D. None
33.
An electronic system that adds no noise has a noise figure of ____ dB
A. 0
B. 1 C. 2 D. None
34.
The power spectral density of noise is given by
A. No=N/BW
B. No=BW/N C. No=N*BW D. None
35.
_______ generates noise when making low noise amplifier
A. Capacitors
B. Inductors C. Resistors D. None
36.
The undesired signal that ultimately emerge from the out put of the mixer are _____
A. Spurs B. Noise figure
C. Distortion
D. None
37.
The 10 giga radian per second is going to behave like_________
A. 10 ohms
B. 100 ohms C. 1 ohm
D. 150 ohms
38.
The ratio of the desired IF output to the value of the RF input is ______
A. Conversion Gain
B. Noise figure
C. Spurs
39.
The first stage of a receiver is typically a__________
A. LNA B. Mixer
C. Local oscillator
D. None
40.
Mixers must be ________ elements
A. Non Linear
B. Linear
C. Time- varying
D. A&C
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D. None