Download STUDIUM DOKTORANCKIE W ITE Wybrane problemy

STUDIUM DOKTORANCKIE W ITE
Wybrane problemy współczesnej elektroniki
sala 120 bud VI, ITE Lotników
LISTOPAD
25 listopada 2013 r. godz. 9.00
Prof. dr hab. Sergey Rumyantsev (Rensselaer Polytechnic Institute, Troy, NY USA)
Basics of noise in semiconductors and nano-dimensional semiconductor devices
26 listopada 2013 r. godz 9.00
Prof. dr hab. Sergey Rumyantsev (Rensselaer Polytechnic Institute, Troy, USA)
Noise in wide-band-gap semiconductors, and terahertz detectors
GRUDZIEŃ
2 grudnia 2013r. godz. 9.00
Prof. dr hab. Maciej Bugajski (Instytut Technologii Elektronowej)
Kwantowe lasery kaskadowe cz. 1
3 grudnia 2013r. godz. 9.00
Prof. dr hab. Maciej Bugajski (Instytut Technologii Elektronowej)
Kwantowe lasery kaskadowe cz. 2
STYCZEŃ
13 stycznia 2014 r. godz. 9.00
Prof. dr hab. inż. Michał Malinowski (IMIO, Politechnika Warszawska)
Luminescencja jonów ziem rzadkich w dielektrykach - podstawy fizyczne i
zastosowania cz.1
27 stycznia 2014 r. godz. 9.00
Prof. dr hab. inż. Michał Malinowski (IMIO, Politechnika Warszawska)
Luminescencja jonów ziem rzadkich w dielektrykach - podstawy fizyczne i
zastosowania cz.2
LUTY
13 lutego 2014 r. godz. 9.00
Prof. dr hab. inż. Bogdan Majkusiak (IMIO, Politechnika Warszawska)
Tunelowanie cz. 1
27 lutego 2014 r. godz. 9.00
Prof. dr hab. inż. Bogdan Majkusiak (IMIO, Politechnika Warszawska)
Tunelowanie cz.2
Prof. dr hab. Sergey Rumyantsev
Rensselaer Polytechnic Institute, Troy, NY USA
Basics of noise in semiconductors and nano-dimensional
semiconductor devices
We will discuss what is the noise, why it is important and how to measure it. The
primary noise sources in semiconductor materials and devices are thermal or Johnson
noise, shot noise, 1/f or flicker noise, random telegraph signal (RTS) noise, and
generation-recombination (GR) noise. Each of these sources is briefly discussed in view
of their importance, characterization and use as a tool to study devices and materials.
In particular, the value of the low-frequency noise is a good indicator of material
quality for semiconductor structures and an important figure-of-merit for many
electronic and optoelectronic devices. Low-frequency noise is highly sensitive to the
presence of crystal imperfections and, under certain conditions, can be used as a
diagnostic tool for quality and reliability of devices. At the same time, high level of the
low-frequency noise is one of the factors, which restricts application of these devices
for communication systems. In most cases, the high low-frequency noise level in
microwave transistors translates into unacceptable phase noise that limits performance
of oscillators, mixers, and other electronic systems.
Noise is not always undesirable effect which has to be reduced. In some cases
noise itself can be used as measurable quantity of such parameters like temperature,
resistance, current, and even for communication and environment gas detection.
Special attention will be given to nano-devices. When devices are getting smaller
and smaller the importance of noise is getting bigger. That is why for nano-devices
noise is one of the most important parameters, which often severely reduces their
applications. However, shrinking of the device leads not only to the noise increase.
Several new effects, like RTS, huge dispersion of noise from device to device, and new
noise mechanisms appear in nano-scale.
Prof. dr hab. Sergey Rumyantsev
Rensselaer Polytechnic Institute, Troy, NY USA
Noise in wide-band-gap semiconductors, and terahertz
detectors
Wide band-gap semiconductors such as GaN, InN, AlN, their ternary alloys, and
SiC have been extensively investigated in recent years because of their microwave,
high power, and optoelectronic applications. Devices based on these material systems
can be used for high-temperature, high-power density, high frequency, and radiationhard applications. Both high and low frequency noise is important for these devices.
We will discuss noise sources in wide-ban-gap semiconductor devices, how to identify
them, and how to reduce the noise.
In spite of not so mature technology as for Si and higher defects concentration, SiC
and GaN materials can compete with Si for low noise applications as well. We will
discuss physical reasons and importance of this observation.
Interest in terahertz (THz) systems and technology has grown
significantly over the past 10 years. THz rays (T-rays) present an alternative to
X-rays for imaging through paper, cloth and many plastic materials. In contrast
to X-rays they are non-ionizing and therefore inherently safe. Applications of
THz rays range from nondestructive testing to medical imaging, security
screening of objects and persons, and secure wireless communication.
Applications of THz waves suffer, however, from the low power of THz sources
and low sensitivity of detectors. These makes noise properties of THz detectors
to be extremely important. We will discuss different type of detectors and
compare their
characteristics
advantages
and
disadvantages
including
their
noise