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STUDIUM DOKTORANCKIE W ITE Wybrane problemy współczesnej elektroniki sala 120 bud VI, ITE Lotników LISTOPAD 25 listopada 2013 r. godz. 9.00 Prof. dr hab. Sergey Rumyantsev (Rensselaer Polytechnic Institute, Troy, NY USA) Basics of noise in semiconductors and nano-dimensional semiconductor devices 26 listopada 2013 r. godz 9.00 Prof. dr hab. Sergey Rumyantsev (Rensselaer Polytechnic Institute, Troy, USA) Noise in wide-band-gap semiconductors, and terahertz detectors GRUDZIEŃ 2 grudnia 2013r. godz. 9.00 Prof. dr hab. Maciej Bugajski (Instytut Technologii Elektronowej) Kwantowe lasery kaskadowe cz. 1 3 grudnia 2013r. godz. 9.00 Prof. dr hab. Maciej Bugajski (Instytut Technologii Elektronowej) Kwantowe lasery kaskadowe cz. 2 STYCZEŃ 13 stycznia 2014 r. godz. 9.00 Prof. dr hab. inż. Michał Malinowski (IMIO, Politechnika Warszawska) Luminescencja jonów ziem rzadkich w dielektrykach - podstawy fizyczne i zastosowania cz.1 27 stycznia 2014 r. godz. 9.00 Prof. dr hab. inż. Michał Malinowski (IMIO, Politechnika Warszawska) Luminescencja jonów ziem rzadkich w dielektrykach - podstawy fizyczne i zastosowania cz.2 LUTY 13 lutego 2014 r. godz. 9.00 Prof. dr hab. inż. Bogdan Majkusiak (IMIO, Politechnika Warszawska) Tunelowanie cz. 1 27 lutego 2014 r. godz. 9.00 Prof. dr hab. inż. Bogdan Majkusiak (IMIO, Politechnika Warszawska) Tunelowanie cz.2 Prof. dr hab. Sergey Rumyantsev Rensselaer Polytechnic Institute, Troy, NY USA Basics of noise in semiconductors and nano-dimensional semiconductor devices We will discuss what is the noise, why it is important and how to measure it. The primary noise sources in semiconductor materials and devices are thermal or Johnson noise, shot noise, 1/f or flicker noise, random telegraph signal (RTS) noise, and generation-recombination (GR) noise. Each of these sources is briefly discussed in view of their importance, characterization and use as a tool to study devices and materials. In particular, the value of the low-frequency noise is a good indicator of material quality for semiconductor structures and an important figure-of-merit for many electronic and optoelectronic devices. Low-frequency noise is highly sensitive to the presence of crystal imperfections and, under certain conditions, can be used as a diagnostic tool for quality and reliability of devices. At the same time, high level of the low-frequency noise is one of the factors, which restricts application of these devices for communication systems. In most cases, the high low-frequency noise level in microwave transistors translates into unacceptable phase noise that limits performance of oscillators, mixers, and other electronic systems. Noise is not always undesirable effect which has to be reduced. In some cases noise itself can be used as measurable quantity of such parameters like temperature, resistance, current, and even for communication and environment gas detection. Special attention will be given to nano-devices. When devices are getting smaller and smaller the importance of noise is getting bigger. That is why for nano-devices noise is one of the most important parameters, which often severely reduces their applications. However, shrinking of the device leads not only to the noise increase. Several new effects, like RTS, huge dispersion of noise from device to device, and new noise mechanisms appear in nano-scale. Prof. dr hab. Sergey Rumyantsev Rensselaer Polytechnic Institute, Troy, NY USA Noise in wide-band-gap semiconductors, and terahertz detectors Wide band-gap semiconductors such as GaN, InN, AlN, their ternary alloys, and SiC have been extensively investigated in recent years because of their microwave, high power, and optoelectronic applications. Devices based on these material systems can be used for high-temperature, high-power density, high frequency, and radiationhard applications. Both high and low frequency noise is important for these devices. We will discuss noise sources in wide-ban-gap semiconductor devices, how to identify them, and how to reduce the noise. In spite of not so mature technology as for Si and higher defects concentration, SiC and GaN materials can compete with Si for low noise applications as well. We will discuss physical reasons and importance of this observation. Interest in terahertz (THz) systems and technology has grown significantly over the past 10 years. THz rays (T-rays) present an alternative to X-rays for imaging through paper, cloth and many plastic materials. In contrast to X-rays they are non-ionizing and therefore inherently safe. Applications of THz rays range from nondestructive testing to medical imaging, security screening of objects and persons, and secure wireless communication. Applications of THz waves suffer, however, from the low power of THz sources and low sensitivity of detectors. These makes noise properties of THz detectors to be extremely important. We will discuss different type of detectors and compare their characteristics advantages and disadvantages including their noise