* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
Download 1 MATTER: Anything which occupies space , has volume and can
Nanofluidic circuitry wikipedia , lookup
Electron configuration wikipedia , lookup
Surface properties of transition metal oxides wikipedia , lookup
Homoaromaticity wikipedia , lookup
Heat transfer physics wikipedia , lookup
History of electrochemistry wikipedia , lookup
Electrochemistry wikipedia , lookup
Bose–Einstein condensate wikipedia , lookup
Chemical bond wikipedia , lookup
Rutherford backscattering spectrometry wikipedia , lookup
Class XII Chemistry states of matter [SOLID STATE] MATTER: Anything which occupies space , has volume and can be perceived by our senses . E.g. solids , liquids, gases are forms of matter Other states of matter are Plasma, BEC (Bose Einstein condensate). PHYSICAL PROPERTIES OF SOLIDS LIQUIDS AND GASES: Sr. No . PROPERTIES Related law or formula 1 2 Mass Shape Units (kg) Area : Units (m2) 3 4 Volume 5 6 7 8 9 10 11 12 SOLIDS definite definite GASES Not possible Definite Definite Acquires the Acquires the shape of the shape of the container container Definite indefinite Almost Highly negligible compressible Can flow Can flow Highly rigid Slow Less rigid Fast Units (m3 ) Compressibility Z= PV Factor nRT Fluidity Viscocity (μ) Rigidity Strength Diffusion r1 √d No. of free Free sites surfaces Density Mass = volume units kg/m3 Packing of Measure of strength/den particles definite Not possible Inter particle force Strongest: cohesive forces> thermal energy sity Spacing between molecules. LIQUIDS Not rigid Very fast Any no. of free Only one free None surfaces surface High Slightly lower Very low Most packed closely Less closely Least closely packed packed. Slightly Negligible, weaker than thermal in solids. energy >cohesive forces More than Most solids Translatory Translator Expansion on vaporisation Less (KJ/mol) heating 13 Motion of Energy Oscillatory constituent Joule (J) particles 14 Kinetic Energy (J) Least Large Very large energy of = 1mu2 particles 2 SOLID: Solid is a form of matter in which the constituting particles are arranged very closely. The constituent particles can be atoms, molecules or ions. PROPERTIES OF SOLIDS: a. Definite mass, volume and shape. b. Short Intermolecular distances , hence strong intermolecular forces (F 1/r2) . c. Atoms/ ions occupies fixed positions and can only oscillate/vibrate about their mean positions due to low thermal energy. Thermal energy temperature d. Closely packed, therefore low compressibility and rigid. 1 Class XII Chemistry states of matter [SOLID STATE] CLASSIFICATION OF SOLIDS ON BASIS OF ARRANGEMENT OF ATOMS/IONS: a. Crystalline solids: definite arrangement (regular) of atoms/ ions e.g. metals (iron, copper), non metals (diamond, graphite) all elements, compounds, alum, sugar. Majority of solids are crystalline in nature. b. Amorphous solids: no definite arrangement (irregular) of atoms / ions e.g. Glass, plastics, rubber, fused silica, tar, pitch, high molecular weight polymers. PROPERTIES OF CRYSTALLINE SOLIDS: a. Definite geometrical shape or regular geometry. b. A long range order, i.e. regular arrangement . c. They have a sharp melting point. d. They are anisotropic in nature i.e. their physical properties show different values when measured along different directions in the same crystal. e. Clean cleavage i.e. when cut with a sharp edged tool, they split into two pieces and the newly generated surfaces are plain and smooth. f. Definite and characteristic heat of fusion g. Also called true solids. Anisotropy: In case of crystalline substances, properties like electrical properties, refractive index, thermal expansion etc are having different values in different directions. POLYMORPHIC FORMS OR POLYMORPHS: The different crystalline forms of a substance are known as polymorphic forms or polymorphs. E.G. CaCO3 exists as Calcite and Aragonite. NOTE: for elements it is called allotropy for example: graphite and diamond are allotropes of Carbon. ISOMORPHISM: When two or more crystalline solids have similar chemical composition that exists in same crystalline form or structure e.g. Na3PO4, Na3AsO4 ANNEALING: regular heating and cooling a glass of glass make the glass milky. CHARACTERISTICS OF AMORPHOUS SOLIDS: a. An irregular shape or no regular arrangement of particles. b. A short range order i.e. regular arrangement of particle in small space. c. Do not have definite heat of fusion. Gradually soften/ melt/ fuses over a range of temperature. (not fixed) d. Isotropic in nature i.e. their physical properties are the same in all directions. e. Irregular cleavage, e.g. when cut with a sharp edged tool, they cut into two pieces with irregular surfaces. f. Also called as pseudo solids or super cooled liquids. This is because they have a tendency to flow, though very slowly. h. Also called pseudo solids (highly super cooled liquid of very high viscocity). 2 Class XII Chemistry states of matter [SOLID STATE] TYPES OF CRYSTALLINE SOLIDS: Type of Solid Constituent Particles Bonding/ Attractive Forces Examples 1. Ionic solids +ve and –ve Ions Coulombic or electrostatic force of attraction NaCl, MgO, ZnS, CaF2 Molecules Dispersion or London forces Dipole dipole Interactions 2. Molecular solids a. Non polar Physical Nature (hardnes s / brittlenes s) Hard but brittle Electrical conductivity Melting point Solubility Insulators in solid state but conductors in molten state and in aqueous solutions High Soluble in polar and insoluble in non polar Ar, CCl4, H2, I2, CO2 HCl, solid SO2, solid NH3 Soft Insulator Very low Soluble as well as insoluble in both Soft Insulator Low Soluble in polar b. Polar Molecules c. Hydrogen bonded 3. Covalent or network solids Molecules Hydrogen Bonding H2O (ice) Hard Insulator Low Soluble in polar Atoms/ molecule Covalent Bonding SiO2 (quartz), SiC, C (diamond ), AlN C(graphit e) Hard Soft Insulators Conductor (exception) Very High Insoluble in polar and usually soluble in non polar solvents 4. Metallic solids Positive ions (+) in a sea of delocalised electrons (-) Metallic Bonding (electrostatic attraction between cations and sea of electrons) Fe, Cu, Ag, Mg Hard but malleable and ductile Conductors in solid state as well as in molten state Fairly High Insoluble in both V.IMP. Q. DIFFERENCE BETWEEN ANY TWO CAN BE ASKED IN BOARD EXAMS. V.IMP Q. DIFFERNENCE BETWEEN CRYSTALLINE AND AMORPHOUS SOLIDS? (2) 3 Class XII PROPERTY Definition Shape Melting Point Compressibility Chemistry CRYSTALLINE SOLID Definite arrangement (regular) of atoms/ ions. They have definite shape and regular geometrical form. They have sharp (definite) melting point. They are rigid and incompressible. Cutting with a sharp They give clean edged tool cleavage, i.e. they break into two pieces with plane surfaces. Heat of fusion They have definite heat of fusion. Isotropic/ Anisotropic i.e. their anisotropic mechanical and electrical properties depend on the direction along which they are measured. Example All elements and compounds Cu, Ni, NaCl etc states of matter [SOLID STATE] AMORPHOUS SOLIDS No definite arrangement (irregular) of atoms / ions. They do not have definite shape and regular geometrical form. They melt over wide range of temperature. They too are usually rigid and cannot be compressed to any appreciable extent. However graphite is soft because of its unusual structure. They give irregular cleavage, i.e. they break into two pieces with irregular surfaces. They do not have a definite heat of fusion. Isotropic i.e. they have similar physical properties in all directions because the constituents are arranged in random manner. Rubber , glass etc. NOTE: Any material can be made amorphous or glassy either by rapidly cooling its melt or freezing its vapours. E.g. silica (SiO2) crystallises as quartz in which SiO4 tetrahedra are linked in a regular manner but on melting and then rapid cooling, it gives glass in which SiO4 tetrahedra are randomly joined to each other. thus quartz is crystalline SiO2 whereas silica glass is amorphous solids SiO2. CRYSTAL LATTICE/ SPACE LATTICE: Space lattice is a regular repeating arrangement of points in space. 4 Class XII Chemistry states of matter [SOLID STATE] (a) Two dimensional lattices: Regular arrangement of atoms in the plane of paper. Sr. No 1 2 3 4 5 Lattice Unit cell Square lattice Rectangular lattice Parallelogram lattice Rhombic lattice Hexagonal lattice Square Rectangle Parallelogram Rectangular with interior point Rhombus with an angle of 600 (b) 3dimensional crystal lattice: A regular orderly arrangement of constituent particles (atoms/ ions/molecules) in three dimensional space. LATTICE POINTS OR LATTICE SITES: The fixed positions on which the constituent particles (atoms/ ions / molecules) are present are called lattice points or lattice sites. SCC: lattice points: 8 , BCC: 9, FCC = 14 CRYSTAL LATTICE: A group of lattice points which when repeated over and over again in 3 dimensions give the complete crystal lattice. UNIT CELL: Smallest repeating unit in space lattice which when repeated over and over again generates the complete crystal lattice. The crystal can consist of an infinite number of unit cells. V.IMP Q. DEFINE UNIT CELL? CRYSTAL LATTICE? LATTICE POINTS, SPACE LATTICE (1)? PARAMETERS WHICH CHARACTERIZE A UNIT CELL: a. Dimensions of the unit cell along the three edges, a, b and c: These edges may or may not be mutually perpendicular (900). b. Inclination (angle) of the edges to each other: This is denoted by the angle between the edges , , and respectively. is the angle between the edges b and c, is the angle between the edges a and c, and is the angle between a and b. TYPES OF CRYSTAL SYSTEMS: 5 Class XII S. n o 1 System Chemistry Maximu m symmetr y elements 9 planes 13 axes 1 centre 2 Cubic or regular (most symmetrical) Tetragonal 3 Hexagonal: 7 planes 7 axes 4 Rhombohedr al or trigonal: Orthorhombi c Or Rhombic Monoclinic: 7 planes 7 axes 5 6 7 5 planes 5 axes 3 plane 3 axis 1 plane 1 axis Triclinic No plane (most un No axis symmetrical) Axes and angles states of matter [SOLID STATE] Examples = = = NaCl, Cu, KCl, CaF2, ZnS, Cu2O, Diamond, Alums, Pb, Ag,, Au, Hg. 90° , a=b=c = = = 90° ; a = b c = = 90°, =120°; a = b c = = 90°; a=b=c = = = 90°; a b c == 90°, 90°; a b c SnO2,ZnO2,TiO2,CaSO4,NiSO4,ZrSiO4,PbWO4 ,White Sn. ZnO, PbI2,CdS, AgI, cinnabar( Graphite, Ice, Beryl, Mg, Zn, Cd HgS), NaNO3, CaSO4, Calcite ,ICI, Quartz, As, Sb, Bi KNO3, K2SO4, PbCO3, BaSO4,CaCO3, Rhombic Sulphur, MgSO4.7H2O Na2SO4.10H2O, Na2B4O7.10H2O, CaSO4.2H2O, Monoclinic Sulphur 90° CuSO4.5H2O, K2Cr2O7, H3BO3 ; a b c TYPES OF UNIT CELLS: a. Primitive or simple unit cells: 6 Class XII Chemistry states of matter [SOLID STATE] Have constituent particles only at its corners. b. Centred unit cells are those unit cells: in which one or more constituent particles are present at positions in addition to those present at the corners. The centred unit cells are of three types: i. Face centred unit cell: A face centred unit cell consists of one constituent particle present at the centre of each face in addition to those present at the corners. ii. Body centred unit cell: A body centred unit cell consists of a one constituent particle is present at its body centre in addition to those present at the corners. iii. End centred unit cell: An end centred unit cells consists of one constituent particle present at the centre of any two opposite faces in addition to those present at the corners. CONTRIBUTION OF PARTICLES AT DIFFERENT LATTICE POSITIONS: a. Corner: If an atom is present at any one corner, it is shared by eight unit cells. So, only one eighth of an atom actually belongs to the unit cell. CONTRIBUTION =1/8 b. Face centre: If an atom is present at the centre of the face, it is shared by two unit cells. So, only half of the atom actually belongs to the unit cell. CONTRIBUTION =1/2 c. Body centre: If an atom is present at the body centre, it is not shared by any other unit cell. So, that one atom completely belongs to the same unit cell. CONTRIBUTION =1 d. Edge centre: If an atom is present at the edge centre, it is shared by four unit cells. So, only one fourth of an atom belongs to the unit cell. CONTRIBUTION =1/4 TOTAL NUMBER OF ATOMS IN DIFFERENT UNIT CELLS FOR ONE UNIT CELL: a. Primitive unit cell (SCC): 1 atom (8 x 1/8) =1 b. Face centred unit cell (FCC): 4 atoms (8 x 1/8+ 6 x ½) c. Body centred unit cell (BCC): 2 atoms (8 x 1/8+ 1) =4 =2 7 Class XII Chemistry states of matter [SOLID STATE] Coordination number is the number of nearest neighbours of any particle. CN for simple cubic (SCC) =6, BCC =8, FCC (hcp or ccp) = 12. Q1. A compound formed by elements A and B has a cubic structure in which A atoms are at the corners of the cube and B atoms are at the face centres. Derive the formula of the compound? Ans. As A atoms are present at the 8 corners of the cube, therefore, number no. of A atoms in a unit cell = 1/8 x 8 =1 As B atoms are present at the face centres of the 6 face of the cube, therefore , no. of B in the unit cell: 1/2x6 = 3 Therefore ratio of atoms A:B = 1:3 Hence the formula is AB3. Q2. a cubic solid is made up of two elements X and Y. Atoms Y are present at the corners of the cube and atoms x at the body centre. What is the formula of a compound? What are the coordination number of X and Y? Ans. As atoms Y are present at the 8 corners of the cube, therefore no of atoms of Y in the unit cell = 1/8 x 8 =1 As atoms X are present at the body centre, therefore no of atoms of X, in the unit cell =1, Therefore ratio of atoms X:Y ::1:1 Hence, the formula of the compound is XY. Coordination no of each of X and Y is 8 DO ASSIGNMENT NO:1 (GIVEN SEPARATELY) CLOSE PACKING IN CRYSTAL STRUCTURES: a. Close packing in one dimension: Each sphere is in contact with two of its neighbours. Coordination number is two. b. Close packing in two dimensions: It is generated by stacking the rows of close packed spheres in two ways: i. Square close packing: AAA ----- TYPE When the spheres of the second row are placed exactly above those of the first row. This way the spheres are aligned horizontally as well as vertically. The arrangement is AAA type. Coordination number is 4. 8 Class XII Chemistry states of matter [SOLID STATE] ii. Hexagonal close packing: ABAB----type When the spheres of the second row are placed above the first one in a staggered manner in such a way that its spheres fit in the depression of the first row. The arrangement is ABAB type. Coordination number is 6. Space occupied 74% , empty space =26% c. Close packing in three dimensions: They can be obtained by stacking the two dimensional layers one above the other. It can be obtained in two ways: i. Three dimensional close packing from two dimensional square close packed layers: AAAA --- pattern Here, The spheres of the upper layer are placed exactly over the first layer such the spheres of the layers are perfectly aligned horizontally and vertically. It has a AAAA.. type pattern. The lattice is simple cubic lattice. ii. Three dimensional close packing from two dimensional hexagonal close packed layers: There are two steps involved as: i. Placing the second layer over the first layer: if a two dimensional layer is considered as A, the second layer which is placed above the first layer in such a way that the spheres of the second layer (considered as B) are placed in the depressions of the first layer. This gives rise to two types of voids: tetrahedral voids and octahedral voids. ii. Placing the third layer over the second layer: There are two possibilities: TYPES OF VOIDS: a. Tetrahedral voids: ABAB-- pattern This type of void is formed at the centre when four spheres are joined in the form of a tetrahedron. Called as triangular void. Radius of tetrahedral voids r = 0.225 R Where R is radius of sphere in close packing For cations in the voids and anions in the packing r+ = 0.225r- 9 Class XII Chemistry states of matter [SOLID STATE] b. Octahedral void: ABCABC-- pattern This type of void is surrounded by six spheres. Double triangular void surrounded by six spheres is an octahedral voids. Radius of octahedral voids r = 0.414 R where R is radius of sphere in close packing For cations in the voids and anions in the packing r+ = 0.414ra. Covering the tetrahedral voids (hexagonal close packing): Here, tetrahedral voids of the second layer may be covered by the spheres of the third layer. It gives rise to ABABAB… type pattern. The three dimensional structure is called hexagonal close packed structure. Coordination number is 12. Example: Mg, Zn 10 Class XII Chemistry states of matter [SOLID STATE] b. Covering the octahedral voids (cubic close packing): Here, octahedral voids of the second layer may be covered by the spheres of the third layer. It gives rise to ABCABCABC… type pattern. The three dimensional structure is called cubic close packed structure or face centred cubic structure. Coordination number is 12. Example: Cu, Ag Cubic close packing ccp: ABCABCABC type space occupied 74% empty 26% Body centred cubic packing BCC space occupied 68% empty 32% Scc packing space occupied 52.4% In hcp (ABAB pattern) or ccp (ABCABC pattern) arrangement, octahedral and tetrahedral voids are present. The number of octahedral voids present in a lattice is equal to the number of close packed particles. The number of tetrahedral voids is twice the number of octahedral voids. Example: If the number of close packed particles = n Number of particles present in octahedral voids = n Number of particles present in tetrahedral voids = 2n NO OF VOIDS FILLED AND FORMULA OF A COMPOUND: No .of octahedral voids = n, where n is no. of particles present in close packing Effective no of octahedral voids in ccp structure One octahedral void is present at the body centre, 12 octahedral voids are present on the centre of 12 edges of the cube = 1+ 1/12 x ¼ =1+3 =4 Note: Each edge centre is shared by 4 unit cell therefore contribution to one is ¼ for edge centre voids. 11 Class XII Chemistry No .of tetrahedral voids = 2 x n states of matter [SOLID STATE] where n is no. of octahedral voids In ccp, total no. of voids per unit cell = 4 (octahedral) + 8 (tetrahedral) =12 In hcp, total no. of voids per unit cell = 6 (octahedral) + 12 (tetrahedral) =12 Assuming n particles of B are present in the packing and 1/3 rd of octahedral voids are occupied by particles A, then ratio of A:B = n/3 : n :: 1/3: 1 Hence formula is A3B. SIZE OF VOIDS: Octahedral void: For an atom to occupy an octahedral void, its radius must be 0.414 times the radius of the sphere. r = 0.414 R Tetrahedral void: For an atom to occupy a tetrahedral void, its radius must be 0.225 times the radius of the sphere. (no. of tetrahedral voids= double the no. of spheres) r = 0.225R TRIGONAL VOIDS: Radius of trigonal void is r = 0.155R where r is radius of spherical trigonal site, R is radius of closely packed sphere. CUBIC VOIDS: r= 0.732 R Derivation of radius of voids as per class lecture. Imp. DIFFERENCE BETWEEN TETRAHEDRAL VOIDS AND OCTAHEDRAL VOIDS: Sr. No Tetrahedral voids Octahedral voids 1 2 r = 0.225R r = 0.414 R Much smaller than the size of the sphere in the packing 3 Coordination no.4 Smaller than the size of the sphere in the packing but larger than the tetrahedral voids. Coordination no.6 12 Class XII 4 Chemistry In hcp, ccp packing, each sphere is in contact with 3 spheres in the layer below and three above it, thus forming one tetrahedral void. Hence there are 2 tetrahedral voids per sphere. i.e. no of tetrahedral voids is double the no. of spheres in the packing. states of matter [SOLID STATE] As octahedral voids is a combination of two voids of the two layer, no of octahedral voids is equal to half the no of tetrahedral voids and hence equal to no of spheres in the packing. No .of tetrahedral voids = 2 x no. of No .of octahedral voids = no. of octahedral voids particles present in close packing Coordination number is the number of nearest neighbours of any particle. CN for simple cubic =6, Bcc =8, fcc (hcp, ccp) = 12. PACKING EFFICIENCY: It is the percentage of total space occupied by constituent particles (atoms, molecules or ions) Packing efficiency= Volume occupied by spheres x 100% Total volume of unit cell a. Packing efficiency for face centred unit cell = 74% b. Packing efficiency for body centred cubic unit cell = 68% c. Packing efficiency for simple cubic unit cell = 52.4% 13 Class XII Chemistry states of matter [SOLID STATE] Derivations: As per class lecture. Q3. Formula of a Compound and Number of Voids Filled A compound is formed by two elements X and Y. Atoms of the element Y (as anions) make ccp and those of the element X (as cations) occupy all the octahedral voids. What is the formula of the compound? Ans The ccp lattice is formed by the element Y. The number of octahedral voids generated would be equal to the number of atoms of Y present in it. Since all the octahedral voids are occupied by the atoms of X, their number would also be equal to that of the element Y. Thus, the atoms of elements X and Y are present in equal numbers or 1:1 ratio. Therefore, the formula of the compound is XY. Q4. Atoms of element B form hcp lattice and those of the element A occupy 2/3rd of tetrahedral voids. What is the formula of the compound formed by the elements A and B? Ans The number of tetrahedral voids formed is equal to twice the number of atoms of element B and only 2/3rd of these are occupied by the atoms of element A. Hence the ratio of the number of atoms of A and B is 2 × (2/3):1 or 4:3 and the formula of the compound is A4B3. Q5. In a crystalline solid, anions B are arranged in a cubic close packing. Cations A are equally distributed between octahedral voids and tetrahedral voids. If all the octahedral voids are occupied, what is the formula of the solid? Ans. Suppose the no of anions B =n Then no. of octahedral voids = n No of tetrahedral voids =2n As octahedral voids and tetrahedral voids are equally occupied by cations A and all the octahedral voids are occupied (given), therefore n cations A are present in octahedral voids and n cations A are present in tetrahedral voids. In other words , corresponding to n anions B, there are n+n= 2n cations A. Thus cations A and anions B are in ratio of 2n : n :: 2:1 Thus formula A2B Q6. In the mineral, spinel, having the formula MgAl2O4, oxide ions are arranged in the cubic close packing, Mg+2 ions occupy the tetrahedral voids while Al+3 ions occupy the octahedral voids. (i) what %age of tetrahedral voids is occupied by Mg+2 ions? (ii) what %age of octahedral voids is occupied by Al+3 ions? Ans According to the formula MgAl2O4: If there are 4 oxide ions, there will be 1 Mg+2 ions and 2Al+3 ions. But if thw 4O2ions are in ccp arrangement , there will be 4 octahedral voids and 8 tetrahedral voids. Thus 1Mg+2 ions is present in one of the 8 tetrahedral voids. Therefore %age tetrahedral voids occupied by Mg+2 = 1/8 x 100= 12.5% Similarly , 2Al+3 ions are present in two octahedral voids out of 4 available. 14 Class XII Chemistry states of matter [SOLID STATE] Therefore %age of octahedral voids occupied by Al+3 ions = 2/4 x100= 50% SUMMARY OF STRUCTURE AND PACKING OF SOLIDS: Property Hexagonal Cubic close Body centred close packing packing cubic (bcc) Arrangement of Close packed Closed packed Not close packed packing Type of packing ABABAB.. ABCABCA... AB AB AB A Available space 74% 74% 68% occupied Coordination 12 12 8 number Malleable and Less malleable , Malleable and ductility hard and brittle ductile Examples Be, Mg, Ca, Cr, Cu, Ag, Au, Pt Alkali metals, Fe Mo, V, Zn RADIUS RATIO: Ratio of radius of cation to that of anion is called radius ratio. Radius ratio = Radius of cation (r+) Radius of anion (r-) Larger is the radius ratio, larger is the size of cation and hence greater is its coordination no. Radius Coordination ratio number 3 0.155-0.225 4 0.225- 0.414 6 0.414- 0.732 8 0.732-1.00 Geometrical shape i.e. Examples position of anions around cations Planar triangle B2O3 Tetrahedral ZnS (sphalerite), CuCl, CuI, BaS, HgS Octahedral NaCl (rock salt ) NaBr, KBr, MgO, MnO, CaO, CaS, NH4Br Body centred cube CsCl (caesium chloride), CsBr, TlBr, TlCl Density of a unit cell is same as the density of the substance. RADIUS RATIO in an octahedral void: For an atom to occupy an octahedral void, its radius must be 0.414 times the radius of the sphere. r = 0.414 R Radius ratio for tetrahedral void: For an atom to occupy a tetrahedral void, its radius must be 0.225 times the radius of the sphere. (no. of tetrahedral voids= double the no. of spheres) r = 0.225R TRIGONAL VOIDS: radius ratio of trigonal void is r = 0.155R r is radius of spherical trigonal site, R is radius of closely packed sphere. CUBIC VOIDS: r= 0.732 R DECREASING ORDER OF SIZE OF VARIOUS VOIDS IS: Cubic> octahedral> tetrahedral > trigonal 15 Class XII Chemistry states of matter [SOLID STATE] Q7. A solid A+B- has NaCl type close packed structure. If the anion has a radius of 241.5pm, what should be the ideal radius of the cation? can a cation C+ having a radius of 50pm e fitted into the tetrahedral hole of the crystal A+B-? Solution : As A+B- has NaCl structure, A+ ions will be present in the octahedral voids. Ideal radius of the cation will be equal to the radius of octahedral void because in that case, it will touch the anions and the arrangement will be close packed. Hence Radius of octahedral void = rA+ = 0.414rB- = 0.414x 241.5pm = 100pm Radius of tetrahedral void = 0.225x rB- = 0.225 x241.5pm = 54.3pm As the radius of the cation C+ (50pm) is smaller than the size of the tetrahedral hole, it can be placed into the tetrahedral void (but not exactly fit into it). Q8. the two ions A+ and B- ions have radii 88 and 200pm respectively. In the close packed structure of compound AB, predict the coordination no of A+ ? Ans. r+ = r(A+) = 88pm = 0.44 rr(A-) 200pm it lies in the range of 0.414-0.732 hence coordination no of A+ is 6 RELATIONSHIP BETWEEN RADIUS OF CONSTITUENT PARTICLE (R) AND EDGE LENGTH (A) AND NEAREST NEIGHBOUR DISTANCE(d): a. Simple cubic unit cell: a= 2r b. Face centred unit cell: a 2 √2 r c. Body centred unit cell: a = 4r/√3 (or r= a/2) d =2r (or r= a/2√2) (or r= √3a/4) d = 2r d = 2r Volume of a unit cell = (edge length)3 = a3 a. Simple cubic unit cell: Volume= (2r)3 b. Face centred unit cell: Volume(2√2 r)3 c. Body centred unit cell: Volume=( 4r√3 )3 Number of atoms in a unit cell (z): a. Simple cubic unit cell: z = 1 (8 x 1/8) b. Face centred unit cell: z = 4 (8 x 1/8+ 6 x ½) c. Body centred unit cell: z = 2 (8 x 1/8+ 1) 16 Class XII Chemistry states of matter [SOLID STATE] SUMMARY OF UNIT CELLS AND THEIR PROPERTIES: Property No of atoms per unit cell (Z) Packing efficiency Relation between r and (a) edge length Nearest neighbour distance d=2r Volume (a3) Coordination number examples SCC BCC FCC 1 2 4 52.4% 68% 74% r= a/2 r= √3a/4 r= a 2√2 d=2r= a d=2r= 2 x √3a 4 d=2r = 2 r= 2xa 2√2 (2r)3 (2√2 r)3 ( 4r√3 )3 6 8 12 (hcp, ccp) Mn BCC metals) (alkali NaCl ionic compound,ZnS DENSITY OF UNIT CELL: Density of unit cell ()g/cm3 = Z M a3 N a Z no. of formula units in the unit cell, (1 for sc, 4 for fcc, and 2 for bcc) M is atomic mass of the element and a is length of the unit cell in pm for cubic crystal of ionic compound , Z= No. of formula units per unit cell, M = formula mass Remember, for ionic compounds, A+B- having fcc structure (e.g. Na+Cl-) Edge (a) = 2 x distance between A+ and B- ions. X RAY DIFFRACTION AND CRYSTAL STRUCURE: Brag equation : nλ = 2dsinθ where n =1,2,3,4,-----d/λ = n/ 2sinθ Where: λ is wavelength, d is distance between the successive atomic planes and the angle of reflection (θ). SUMMARY OF STRUCTURE OF METALS Crystal structure Arrangement of ions AB type Rock salt Cl- = fcc arrangement Na+ ions = edge centres and body centre Cl- = 4 Bcc arrangement Cs+ = 8 Cl = corners S2- = 4 Cs+ = body centre Caesium chloride Coordination no Na+ = 4 Formula units 4 1 17 Class XII Chemistry states of matter [SOLID STATE] Zinc blende (ZnS) Ccp arrangement type S2- = fcc , Zn+2=in tetrahedral voids AB2 type Ccp arrangement (i) Fluorite (CaF2) Ca+2 =fcc, F= all type tetrahedral voids (ii) Antifluorite B2- = ccp , A+ = half (A2B) tetrahedral voids Zn+2 = 4 S2- = 4 4 Ca+2 =8 F- = 4 4 Na+ = 4 O2- = 8 4 EFFECT OF TEMPERATURE ON CRYSTAL STRUCTURE: Increase of pressure increase coordination no While increase of temperature decreases coordination no. NaCl Structure High pressure CsCl (6:6 coordination) 760K (8: 8 coordination) Q9. An element has a body-centred cubic (bcc) structure with a cell edge of 288 pm. The density of the element is 7.2 g/cm3. How many atoms are present in 208 g of the element? Solution: Volume of the unit cell = (288 pm)3 = (288×10-12 m)3 = (288×10-10 cm)3 = 2.39×10-23 cm3 Volume of 208 g of the element = mass = 208 g = 28.88 cm3 density 7.2 g/cm3 Number of unit cells in this volume = 28.88 cm3 = 12.08×1023 unit cells 2.39 x10-23 cm3/ unit cell Since each bcc cubic unit cell contains 2 atoms, therefore, the total number of atoms in 208 g = 2 (atoms/unit cell) × 12.08 × 1023 unit cells = 24.16×1023 atoms Q10. X-ray diffraction studies show that copper crystallises in an fcc unit cell with cell edge of 3.608×10-8 cm. In a separate experiment, copper is determined to have a density of 8.92 g/cm3, calculate the atomic mass of copper. Solution : In case of fcc lattice, number of atoms per unit cell, z = 4 atoms Therefore, M = dNA a3 Z = 8.92g/cm3x 6.022x1023 atoms/mol x (3.608x10-8 cm)3 4atoms = 63.1 g/mol Atomic mass of copper = 63.1u Q11. Silver forms ccp lattice and X-ray studies of its crystals show that the edge length of its unit cell is 408.6 pm. Calculate the density of silver (Atomic mass = 107.9 u). Solution : Since the lattice is ccp, the number of silver atoms per unit cell = z = 4 Molar mass of silver = 107.9 g mol–1 = 107.9×10-3 kg mol–1 Edge length of unit cell = a = 408.6 pm = 408.6×10–12 m Density, d = z.M a3 .NA = 4 x107.9x10-3 kgmol-1 (408.6 x10-12m)3 x 6.022x 1023 mol-1 = 10.5×10-3 kg m–3 = 10.5 g cm-3 18 Class XII Chemistry states of matter [SOLID STATE] IMPERFECTONS OR DEFECTS IN SOLIDS: Crystal defects: Irregularities or departure from perfectly ordered arrangement of constituent particles. Defects are of two types: a. Point defects - Point defects are the irregularities or deviations from ideal arrangement around a point or an atom in a crystalline substance. b. Line defects - Line defects are the irregularities or deviations from ideal arrangement in entire rows of lattice points. Point defects are of three types: a. Stoichiometric or intrinsic or thermodynamic defects: These are the point defects that do not disturb the stoichiometry of the solid. b. Non–stoichiometric defects: These are the point defects that disturb the stoichiometry of the solid. c. Impurity defects: These are the defects in ionic solids due to the presence of impurities present in them. Stoichiometric defects for non- ionic solids are of two types: VACANCY DEFECT INTERSTITIAL DEFECT A crystal is said to have vacancy defect A crystal is said to have interstitial defect when some of the lattice sites are when some constituent particles (atoms vacant. or molecules) occupy an interstitial site. This results in decrease in density of the This results in increase in density of the substance. substance. Stoichiometric defects for ionic solids are of two types: SCHOTTKY DEFECT FRENKEL OR DISLOCATION DEFECT In this defect equal number of cations and In this defect, the smaller ion (usually anions are missing cation) is dislocated from its normal site to an interstitial site. It is basically a vacancy defect in ionic It creates a vacancy defect at its original solids. site and an interstitial defect at its new location. It decreases the density of a solid It does not change the density of the solid Schottky defect is shown by Frenkel defect is shown by (a) ionic substances in which the cation (a) ionic substance in which there is a large and anion are of almost similar sizes. difference in the size of ions (cations and (b) Occurs where coordination no. is high. anions). (b) Occurs where coordination No is low. For example: NaCl, KCl, CsCl and AgBr For example: ZnS, AgCl, AgBr and AgI Substance having both schottky defects and frenkel defects : AgBr 19 Class XII Chemistry states of matter [SOLID STATE] Non-stoichiometric defects are of two types: a. Metal excess – This type of defect is due to excess of metal cations. These may be due to: vimp i. Anionic vacancies: A compound may have an extra metal ion if the negative ion is absent from its lattice site. This empty lattice site is called a hole. To maintain electrical neutrality this site is occupied by an electron. The hole occupied by an electron is called f-centre or Farbenzenter centre . F- centre is responsible for the colour of the compound. e.g. on heating NaCl in presence of Na ions, some anions (Cl-) leave lattice sites which are occupied by electrons called F centres. ii. Presence of extra cations: A compound is said to have extra cations if a cation is present in the interstitial site. An electron is present in the interstitial site to maintain the electrical neutrality. E.g. ZnO, O2 gas is lost, Zn+2 ions and e- occupy interstitial sites. b. Metal deficiency: This defect arises because of absence of metal ions from its lattice sites. The electrical neutrality is maintained by an adjacent ion having a higher positive charge. E.g 2A+ in lattice sites may be replaced by A2+ in one lattice site and one lattice site remains vacant. Fe2O ideal composition composition (actual Fe0.95O) CLASSIFICATION OF SOLIDS BASED ON THEIR ELECTRICAL CONDUCTIVITIES: A. CONDUCTORS-The solids with conductivities () ranging between 104to 107 ohm–1m– 1 are called conductors. B. INSULATORS - These are the solids with very low conductivities () ranging between 10–20 to 10–10 ohm–1m–1. C. SEMI-CONDUCTORS - These are the solids with conductivities () in the intermediate range from 10–6 to 104 ohm–1m–1. Band theory – A metal is characterized by a band structure. The highest filled band is called valence band and the lowest unoccupied band is called conduction band. The gap between the two bands is called forbidden band. 20 Class XII Chemistry states of matter [SOLID STATE] a. In case of conductors, the valence band and conduction band overlap b. In case of insulators, the forbidden gap is very large and the electrons are unable to excite to the conduction band. c. In case of semiconductors, forbidden gap is small. Therefore, some electrons may jump to conduction band and show some conductivity. Electrical conductivity of semiconductors increases with rise in temperature, since more electrons can jump to the conduction band. TYPES OF SEMICONDUCTORS: a. Intrinsic: These are those semiconductors in which the forbidden gap is small. Only some electrons may jump to conduction band and show some conductivity. They have very low electrical conductivity. Example: Silicon, germanium b. Extrinsic: When an appropriate impurity is added to an intrinsic semiconductor. Their electrical conductivity is high. DIFFERENCE BETWEEN INTRINSIC SEMICONDUCTORS AND EXTRINSIC SEMI CONDUCTIORS: INTRINSIC SEMI CONDUCTORS EXTRINSIC SEMI CONDUCTORS It is a pure semi conductor and no impurity It is prepared by doping small quantity of is added to it. impurity atoms to the pure semi conducting materials. 2. examples are crystalline forms of pure Si e.g.si and ge crystals doped with impurity and germanium. as As, Sb, P etc. 3. no of free electrons in the conduction The no. of holes and valence electrons are band and no. of holes in the valence band never equal. is exactly equal and very small indeed. 4. low electrical conductivity. High electrical conductivity. 5. electrical conductivity is a function of Electrical conductivity depends upon the temperature alone. temperature as well as the quantity of impurity atoms doped in the structure. DOPING: The process of adding an appropriate amount of suitable impurity to increase the conductivity of semiconductors. TYPES OF EXTRINSIC SEMI CONDUCTORS: 21 Class XII Chemistry N-TYPE SEMICONDUCTORS 1. It is obtained by doping the impurity atoms of group 15th (Si) . to pure semi conductor e.g. As, Sb, P. 2. The increase in conductivity is due to the negatively charged electrons. 3. the electrons are majority carrier and holes are minority carriers. i.e. ne >>nh states of matter [SOLID STATE] P –TYPE SEMICONDUCTORS It is obtained by doping the impurity atoms of group 13th . to pure semi conductor of group 15 (Si). The increase in conductivity is due to the positively charged holes. Holes are majority carrier and electrons are minority carriers. i.e. nh >>ne DIODE: It is a combination of n-type and p-type semiconductors and is used as a rectifier. e.g. LED light emitting diode, Photo diode used in solar cell TRANSISTORS: They are made by sandwiching a layer of one type of semiconductor between two layers of the other type of semiconductor. npn and pnp type of transistors are used to detect or amplify radio or audio signals. 12- 16 COMPOUNDS – These compounds are formed by the combination of group 12 and group 16 compounds. They possess an average valency of 4. Example: ZnS, CdS, CdSe and HgTe 13- 15 COMPOUNDS – These compounds are formed by the combination of group 13 and group 15 compounds. They possess an average valency of 4. Example: InSb, AlP and GaAs Every substance has some magnetic properties associated with it. The origin of these properties lies in the electrons. Each electron in an atom behaves like a tiny magnet. Its magnetic moment originates from two types of motions (i) its orbital motion around the nucleus and (ii) its spin around its own axis. VARIATION OF RESISTANCE OF SOME ELECTRICAL MATERIAL AND TEMPERATURE: Electric resistance (R) – is the ratio of potential difference (V) across the ends of the conductor to the current (I) flowing through it, i.e. R =V Ohm (Ω) I Units of R is ohm (Ω) 22 Class XII Chemistry states of matter [SOLID STATE] RESISTANCE : Property of a substance by virtue of which it opposes the flow of current through it. VARIATION OF RESISTANCE: R= ρL where R is called resistance of the material, ρ is the resistivity of the A material, A is the area of cross-sectional of wire, L is the length of wire. R also depends on Material of the conductor. Rt = R0 (1 + t) Where Rt = Resistance at temperature toC Ro = Resistance at temperature 0oC (i) METALS: for metals Temperature coefficient of resistance ()>0. Therefore resistance increases wrt Temperature. Physical explanation: collision frequency of free electron with immobile +ve ions increases. (ii) SOLID NON METALS: For these =0, so resistance is indepenedent with temperature. Physical explanation: complete absence of free electrons. (iii) SEMI CONDUCTORS: For semi conductors <0, i.e. resistance decreases with the temperature rise. Physical explanation: covalent bonds breaks, liberating more free electron and conduction increases. (IV) ELECTROLYTE: for electrolyte <0, i.e. resistance decreases with temperature rise. Physical explanation: the degree of ionisation increases and solution and solution becomes less viscous and more conducting. (V) IONISED GAS: for ionised gas <0, i.e. resistance decreases with temperature rise. Physical explanation: degree of ionisation increases. (VI) ALLOYS: for alloys α has a small +ve value so with rise of temperature resistance of alloys is almost constant. Further alloy resistance are slightly higher than the pure metal resistance. Alloys are used to made standard resistances, wires of resistance box, potentiometer wire, meter bridge wire etc. Commonly used alloys are : constantan, maganin, Nichrome etc. (VII) SUPER CONDUCTORS: At low temperature , the resistance of certain substances becomes exactly zero. (e.g. Hg below 4.2K or Pb below 7.2K) These substance are called super conductors and phenomenon is super conductivity. The temperature at which resistance becomes zero is called critical temperature and depends upon the nature of the substance. USES: (i) Helps in producing super computers. (ii) Superconductor cables for electricity transmission without any loss. (iii) To create strong magnetic field with small electrical power. Therefore electrical conductivity of metals decreases with temperature (due to vibtations of +ve ions which hinders the flow of electrons). 23 Class XII Chemistry states of matter [SOLID STATE] Semi conductors increases with temperature (electron jump from valence band to conduction band) Some transition metal oxides and their conductivities: (i) TiO, CrO2, ReO3 are metallic (ii) MnO, FeO and CuO are insulators (iii) VO, VO2, VO3 and TiO3 changes from metallic to insulators at a certain temperature. MAGNETIC PROPERTIES OF SOLIDS: CLASSIFICATION OF SOLIDS ON THE BASIS OF MAGNETIC PROPERTIES: A. DIAMAGNETIC: Diamagnetic substances are weakly repelled by a magnetic field. Diamagnetism is shown by those substances in which all the electrons are paired and there are no unpaired electrons. E.g N2, TiO2, H2O, Zn, Cd, NaCl,Cu+, benzene etc. B. PARAMAGNETIC: These are those substances which are weakly attracted by the magnetic field. It is due to presence of one or more unpaired electrons and hence magnetic moment. E.g. O2,NO, metal ions (Cu+2, Fe+3, Cr+3 ), metals (Cr, Mn, Ni, Co, Fe) , metal ocide (CuO, VO2)etc. C. FERROMAGNETIC: These are those substances which are attracted very strongly by a magnetic field even in the absence of magnetic field. E.G. Fe, Ni, Co, Gd,CrO2 (magnetic tapes, recorders) D. ANTIFERROMAGNETIC: Which are expected to possess paramagnetism or ferromagnetism but actually have zero net magnetic moment. They have equal number of parallel and anti parallel magnetic dipoles (domains) resulting in a zero net dipole moment. E.g. MnO, Mn2O3, MnO2 E. FERRIMAGNETIC: which are expected to possess large magnetism but actually have small net magnetic moment, e.g. magnetite (Fe3O4), ferrites (M2+Fe2O4). Because of unequal number of parallel and anti parallel magnetic dipoles resulting in a net dipole moment. CURIE TEMPERATURE: It is the temperature above which a ferromagnetic substance shows no ferromagnetism. Some magnetic properties of common substance: (a) TiO, VO, CuO are paramagnetic whereas MnO, CoO, NiO are antiferromagentic. (b) TiO2 is diamagnetic, VO2 is paramagnetic, CrO2 is ferromagnetic whereas MnO2 is antiferromagnetic. 24 Class XII Chemistry states of matter [SOLID STATE] PIEZOELECTRICITY: When mechanical stress is applied on such crystals, electricity is produced due to displacement of ions which is known as piezoelectricity. Piezoelectric crystals: titanates of barium and lead, lead zirconate (PbZrO3), ammonium dihydrogen phosphate (NH4H2PO4) PYROELECTROCITY: Some piezoelectric crystals when heated produce a small electric current. Electricity thus produced is called pyroelectricity (pyro means heat) FERROELECTROCITY: In some piezoelectric crystals, the dipoles are permanently polarised even in the absence of electric field. However on applying electric field, direction of polarisation changes. This phenomenon is called ferro-electricity. e.g. barium titanate (BaTiO3) , sodium potassium tartarate (Rochelle salt) and potassium di hydrogen phosphate (KH2PO4). It may be pointed out here that all ferroelectric solids are piezoelectric but the reverse is not true. ANTIFERROELECTRICITY: In some crystals, the dipoles align themselves in such a way that alternatively, they point up and down so that the crystals does not possess any net dipole moment. Such crystals are said to be anti ferroelectric. E.g. lead zirconate. Q12. analysis shows that a metal oxide has the empirical formula of M0.96O1.00 . calculate the percentage of M2+ and M3+ ions in this crystal? Ans. Formula of metal oxide = M0.96O1.00 means M = 0.96 = 96 O 1.00 100 Thus if there are 100 O atoms M atoms would be 96 Charge on 100 O2- ions =100 x (-2) = -200 Suppose M atoms as M2+ = x and M3+ = 96-x total charge on M2+ and M3+ =(+2) x + (+3)x (96-x) = 288-x =200 or x= 88 therefore %age of M as M2+ = 88 x 100 = 91.7% 96 %age of M as M3+ = 100 - 91.7% = 8.3% Curie temperature: It is the temperature above which a ferromagnetic substance shows no ferromagnetism. 25