Download TF1 - 12. INTERNATIONAL CONFERENCE ON THIN FILMS ICTF`12

TF1
Advanced Deposition Techniques
Posters
TF1.1.P
OPTICAL AND ELECTRICAL CHARACTERISTICS OF
ZIRCONIUM OXIDE THIN FILMS DEPOSITED ON SILICON
SUBSTRATES BY SPRAY PYROLYSIS
M. Aguilar-Frutis1, J.J. Araiza2, C. Falcony3,*, M. Garcia1,4
CICATA-IPN, Miguel Hidalgo 11500, México, DF México,
2
Unidad Académica de Física, U.A.Z. Av. Preparatoria
# 301, C.P. 98060, Zacatecas, México.
3
CINVESTAV-IPN, Apdo. Postal 14-740, 07000, México, DF México
4
IIM-UNAM, Coyoacan 04510, México, DF México
1
The optical and electrical characteristics of zirconium oxide thin films deposited by spray
pyrolysis on silicon substrates are reported. The films were deposited from a spraying
solution of zirconium acetylacetonate in N,N-dimethylformamide using an ultrasonic mist
generator on (100) Si substrates. The substrate temperature during deposition was in the
range of 400 to 600º C. Deposition rates up to 16 Å/sec were obtained depending on the
spraying solution concentration and on the substrate temperature. A refraction index of the
order of 2.0 was measured on these films by ellipsometry. The electrical characteristics of
the films were determined from the capacitance and current versus voltage measurements.
The addition of water mist during the spraying deposition process was also studied in the
characteristics of the films.
The financial support by CONACyT-Mexico, under grants: G37858-E and J34225-U is
acknowledged.
______________________
Form of presentation: Poster
*
Corresponding author: C. Falcony
Tel. (+) 52 55 5747 3703
Fax (+) 52 55 5747 7096
e-mail address: [email protected]
TF1.2.P
ELECTRONIC PROPERTIES OF PLD PREPARED NITROGENATED
a-SiC THIN FILMS
F. Barrecaa, E. Fazioa,b, F. Neria,b,* and S. Trussoc
a
INFM, Unità di Messina, Italy
b
Dipartimento di Fisica della Materia e Tecnologie Fisiche Avanzate, Università di
Messina, Salita Sperone 31, I-98166, Messina, Italy
c
Istituto per i Processi Chimico-Fisici del CNR, Via La Farina 237, I-98123, Messina, Italy
Nitrogenated amorphous silicon carbide thin films were deposited by means of pulsed laser
ablation. The films were grown, onto crystalline silicon and Corning glass substrates held at
930K, by ablating sintered ceramic silicon carbide targets in a controlled nitrogen partial
pressure, up to 26 Pa. Nitrogen contents up to 7.6% were determined, by means of X-ray
Photoelectron Spectroscopy measurements, while a substantial 1:1 proportion of Si and C
was maintained. Optical and electrical properties were investigated by means of
spectroscopic ellipsometry and dc electrical conductivity measurements. A widening of the
energy band gap Eg, from 1.60 up to 2.41 eV, and a decrease from 2.91 to 1.88, of the
refraction index at 632 nm, were observed upon increasing the nitrogen content. The dc
electrical conductivity was studied in the temperature range of 77-550 K using a coplanar
electrodes geometry. The room temperature dark conductivity decreases from 10-5 to 10-9
-1cm-1, with increasing nitrogenation, exhibiting an hopping conduction behaviour at low
temperature, for lowest N contents, while one of the activated type took place around room
temperature. The activation energies Ea increased from 0.23 to 0.93 eV with the nitrogen
content. The results of the XPS analysis pointed out a change of the chemical bonding
structure, with a reduction of the Si-C bonds concentration in favour of the formation of
both Si-N and C-C bonds. Then, we attributed the observed changes in both Eg and Ea
values to the removal of electronic states lying at the band edges, as induced by the
formation of Si-N bonds stronger than the existing ones.
___________________
*
Corresponding author:
F. Neri
Dipartimento di Fisica della Materia e Tecnologie Fisiche Avanzate, Universita' di Messina
Salita Sperone 31, 98166 Messina - ITALY
Tel. +39 090 6765394 - Fax +39 090 391382 - E-mail: [email protected]
TF1.3.P
Superconducting (Hg,Re)Ba2Can-1CunO2n+2+
pyrolysis.
D. De Barros*/**, L. Ortega**, Ch Peroz***, C. Villard***, P. Odier** and F. Weiss*
*Laboratoire des Matériaux et du Génie Physique (LMGP),INPG, 38402 St. Martin
d’Hères Cedex, France.
**Laboratoire de Cristallographie, CNRS, 25 Avenue des Martyrs, B.P.166, 38042
Grenoble Cedex, France.
***CNRS/CRETA 25 avenue des martyrs, BP 166, 38042 Grenoble Cedex 09, France
Films of Hg0,75Re0,25Ba2CaCu2O (Hg-1212) and Hg0,75Re0,25Ba2Ca2Cu3O (Hg-1223)
have been synthetised from precursors films produced by a spray pyrolysis method. We have
designed a new reactor for spray pyrolysis using an ultrasonic nebulizer and firstly report on the
main parameters controlling the formation of oxide phases during the spray deposition.
Homogeneous (Re)BaCaCu oxides films with smooth surfaces and an efficient thickness control
have been obtained. Then we show results about the formation of c-axis oriented Hg-1212 and
Hg-1223 superconducting phases according to the type of substrates, i.e. MgO, LaAlO3 and
SrTiO3 . Continuous films on LaAlO3 substrate with 50 mm² area and 600nm thickness have been
obtained and analysed by X-ray diffraction and Electron Beam Scattered Diffraction. They show
strong epitaxial orientation with a reduced misorientation in the a-b plane. Transport properties
have been measured showing critical current density larger that 105A/cm2 at 77 K that is
expected to be improved after appropriate suppression of residual impurities.
Corresponding author: M. De Barros Dominique
e-mail: [email protected]
adress: Laboratoire des Matériaux et du Génie Physique (LMGP),INPG,
38402 St. Martin d’Hères Cedex, France
TF1.4.P
HOW TO IMPROVE THE UNIFORMITY OF DEPOSITION
CONDITIONS IN LARGE PULSED D.C. PACVD REACTORS
M. Fink, J. Laimer, H. Störi
Institut für Allgemeine Physik, Vienna University of Technology,
Wiedner Hauptstraße 8-10. A-1040 Wien, Austria
The deposition of hard coatings on different types of workpieces by plasma-assisted
chemical vapour deposition (PACVD) has become an important process in industry. In
order to increase the productivity of this technique there was a demand in an up-scaling.
However, a few problems are related with this task. Since a couple of years it is known, that
a gas distribution system is required for a uniform thickness distribution and quality of the
deposited films [1]. However, it became evident only very recently that the dynamics of the
discharge has a significant influence on the homogeneity of the coatings as well.
Investigations of the temporal and spatial evolution of unipolar pulsed direct-current (d.c.)
discharges relevant for the production of titanium nitride (TiN) coatings using titanium
tetrachloride (TiCl4) as a feedstock gas have shown that under certain loading conditions
the spreading of the discharge during the pulse is too slow [2]. The discharge ignites at the
beginning of each pulse at one spot and spreads from there across the reactor.
The ignition and spreading behaviour of the discharge can be very much improved by the
superposition of short high voltage pulses at the beginning of each conventional pulse [3].
These additional short high voltage pulses produce additional charge carriers at the
beginning of the conventional negative pulses and enable a fast ignition and spreading.
Another possibility to improve the ignition and spreading behaviour of the discharge is the
use of bipolar voltage pulses. Some commercially available power supplies have already
included this feature. During the positive voltage pulses the ratio of the surfaces of cathode
to anode is inverted compared to the case of the negative voltage pulse. Because of the
large surface of the cathode during the positive voltage pulse the discharge current and
accordingly the plasma power is significantly higher. So one can assume that at the end of
the pulse-off time more charge carriers remain and hence, the density of charge carriers is
high enough for a better ignition of the discharge at the beginning of the negative pulse.
[1] J. Laimer, H. Störi, P. Rödhammer, Thin Solid Films 191 (1990) 77.
[2] T. A. Beer, J. Laimer, H. Störi, J. Vac. Sci Technol. A 18 (2000) 423.
[3] C. Kugler, M. Fink, J. Laimer, H. Störi, Surf. Coat. Technol. 142-144 (2001) 424
This work was supported by the Austrian Science Foundation (FWF) under project No.
P10794 and No. P14338.
 J. Laimer. Institut für Allgemeine Physik, Vienna University of Technology, Wiedner
Hauptstraße 8-10. A-1040 Wien, Austria. Tel.: +43-1-58801-13461; Fax.: +43-1-5880113499; E-mail: [email protected]
TF1.5.P
GROWTH AND STRUCTURAL CHARACTERIZATION OF
ALUMINUM OXIDE THIN FILMS DEPOSITED BY SPRAY
PYROLYSIS FROM AL(ACAC)3
J. Guzmán-Mendozaa,b, O. Alvarez Fregosoa, M. Garcíaa,b, M. Aguilar-Frutisc and
C.Falconyd
IIM-UNAM Coyoacán 04510 México, D.F. México
Programa de Posgrado en Tecnología Avanzada, CICATA-IPN
c
CICATA-IPN Miguel Hidalgo 11500, México, D.F. México
d
CINVESTAV-IPN Apdo. Postal 14-740, 07000, México, D.F., México.
a
b
Structural characteristics and chemical composition of aluminum oxide thin films deposited
on silicon substrates are reported. The films were deposited using the spray pyrolysis
technique from a spraying solution of aluminum acetylacetonate (Al(acac)3), dissolved in
N,N-dimethylformamide (N,N-DMF), at temperatures in the range from 500 to 650º C.
Water mist was added during the deposition process to improve the overall characteristics
of the films. No farther post deposition thermal treatments were given to these films.
Wavelength Dispersive Spectroscopy (WDX) measurements were used to determine the
chemical composition of the films deposited under different conditions, detecting carbon in
all the samples. The concentration of carbon increases as the substrate temperature is rised.
Transmission electron microscopy showed that the films were obtained with the presence of
a tiny 5Al2O3:H2O crystalline phase embedded in a dense amorphous matrix. It was found
that the volumetric fraction of this phase depended on the deposition temperature. The
surface roughness of the films, obtained by Atomic Force Microscopy (AFM), was of the
order or less than 20 A. Deposition rates up to 540 Å/min with low chemical etch rates and
activation energies around 28 kJ/mol were also determined.
TF1.6.P
IMMERSION DEPOSITION FILMS OF Ag AND ITS ALLOYS ON
METAL SUBSTRATES
V.V.Kedrov, G.V.Strukov, G.K.Strukova*, I.K. Bdikin and N.V.Klassen
Institute of Solid State Physics, Chernogolovka, Moscow distr., 142432, Russia
Nonporous strong adhesion silver films and Ag-Au, Ag-Pd, Ag-Bi, Ag-Ni, Ag-Sb, Ag-Sn alloy films
with different composition were grown by electroless non electrical deposition from aqueous-organic
solutions on substrates from copper and copper alloys. For the first time the co-deposition silver alloys from
one electrolyte without electrical current was deposited. By the X-ray diffraction methods it was shown that
the films from pure silver and from the Ag-Au alloy on the single crystal substrate of copper are grow
epitaxially. The thickness of films from silver and its alloys depends from the deposition parameters
(temperature and time interval of deposition), from the electrolyte compound and it is varied from 0.1μm to
1μm and more. The local X-ray spectral analysis has shown homogeneity of films, both on the composition of
the alloy and on film thickness.
* Correspond address: [email protected]
TF1.7.P
Synthesis and Characterization of the -BaB2O4 thin film obtained by the
Polymeric precursors Method
Valmor R. Mastelaroa, Person P. Nevesa, Sônia M. Zanettib, Edson R. Leiteb
a
Instituto de Física de São Carlos, USP São Carlos, S.P. Brazil.
bDepartamento de Química, UFSCar - São Carlos, S.P. Brazil.
-BaB2O4 (-BBO) phase is an attractive non-linear-optical material characterized by a
wide range of transparency over near-infrared to ultraviolet, large effective second
harmonic generation coefficient, a broad phase-matched region and a high damage
threshold. The application of the -BBO material in different optical processes stimulated
studies of preparation and characterization of this phase in a thin film form. The largest
difficulty or complexity is then in the preparation of the precursor product for the
deposition of the thin films, in the powder or in the solution form. The main objetive of the
present work was the synthesis and characterization of the -BBO phase in a powder and
thin film form using the polymeric precursor method, normally know by Pechini’s Method.
The results showed that the substitution of ethylene glycol by sorbitol in the prepration
process was the critical factor to avoid the loss o boron during the sample calcination and
crystallization. The -BBO crystalline phase in a powder form was obtained from a
stoichiometric composition only when sorbitol was added to the solution. Thin films were
then obtained from the solution using the spincoation process. This method allow us to
obtain a 180 nm thich monolayers film and even thicker films for multilayers. The films
coated on SiO2 (100) substrates displayed alongated grain structures with a superficial
roughness of approximately 11 nm.
Valmor Roberto Mastelaro
IFSC-USP São Carlos
Av. Trabalhador São Carlense 400
CEP 13655-960
São Carlos, S.P. , Brazil
e-mail: [email protected]
TF1.8.P
INTRODUCTION OF Al, Y AND MgO IMPURITIES IN TBCCO THIN
FILMS
A.Morales-Peñaloza1, R.T.Hernández L.2,3, L. Pérez-Arrieta3, J.L. Rosas M.1, M. AguilarFrutis3, *, Mi. Jergel1, C. Falcony1
1
Depto. de Física, CINVESTAV-IPN, México, D.F., México
2
UAM-Azcapotzalco, México D.F., México
3
CICATA-IPN, Miguel Hidalgo 11500, México D.F., México
TBCCO thin films with Al, Y and Mg impurities have been prepared by the two
step process. Precursors were synthesized by the spray pyrolisis technique onto Goodfellow
commercial Ag-foil (99.9% purity). These films were deposited using acetylacetonates of
Ba, Ca and Cu dissolved in N-dimetilformamide and an ultrasonic nebulizator was used to
produce the spray. A second nebulizator was used to introduce the impurities from a
spraying solution of acetylacetonates of Al, Y or Mg. With this technique it is possible to
control the amount of impurities introduced into the film. The introduction of thallium in a
second step is performed by thermal diffusion in one-zone furnace.
The chemical composition and morphology of the films was determined by EDS
and SEM respectively. It was found that the structural characteristics of the precursor films
are affected by thermal treatments.
The results of characterization of the electrical properties of synthesized films will
be reported.
Corresponding author: A. Morales-Peñaloza, e-mail: [email protected]
Cinvestav-IPN, Depto. de Física. Apdo. Post., 14-740, 07000, México D.F.
Tel: +(52) 55 5747 3800 (ext. 6171 y 6192)
Fax: +(52) 55 5747 7096
*
TF1.9.P
Hydrogenated amorphous carbon prepared by RF plasma enhanced
chemical vapour deposition (PECVD)
E. F. Motta and I. Pereyra
Departamento de Engenharia de Sistemas Eletrônicos, Escola Politécnica,
Universidade de São Paulo, CP: 61548 CEP: 05424-970, São Paulo, SP, Brazil
The relationships between the deposition conditions, the growth mechanisms, the
microstructure and the electronic density of states of hydrogenated amorphous carbon
(DLC) films prepared by PECVD from hydrocarbons are not yet understood. Therefore, in
this work we perform a systematic study, using several complementary techniques to
determine the change in the microstructure and in the optical properties of the DLC samples
deposited from a radio-frequency discharge using methane and Ar mixtures. The films are
deposited in a 13.56 MHz, RF driven asymmetric plasma reactor at  150 degrees C. the
varied deposition parameters were the RF power, the deposition pressure and the argon
flow. The microstructural proprieties are obtained from optical absorption and infrared
absorption. Increasing argon flow provokes an increases dissociation of the methane, but
also, produces corrosion of the film due to the increase in ion bombardment. In this was for
increasing of argon flow occurs a decrease in the film deposition. With increasing
deposition pressure, on the contrary, an increase in the growth rate is observed, which is
accompanied by an increase in hydrogen incorporation. Finally, increasing RF power
increases the growth rate and also, it provokes the incorporation of sp² bonds.
TF1.10.P
EFFECT OF ARGON ADDITION INTO OXYGEN ATMOSPHERE ON
YBCO THIN FILMS DEPOSITION
Peter B. Mozhaev,#, Anders Kühle+, Jørn Bindslev-Hansen+, Johannes L. Skov+,
Igor V. Borisenko#, Gennady A. Ovsyannikov#
#
Institute of Radio Engineering and Electronics RAS, 101999, Moscow, Russia,
+
Physics Dept., Technical University of Denmark, DK-2400, Denmark
Multicomponent nature of the YBa2Cu3Ox (YBCO) high-temperature
superconductor makes difficult fabrication of smooth thin films: every local deviation from
stoichiometry can result in seeding of a non-superconducting oxide particle. High density
of such particles on typical YBCO thin film surface, however, presumes overall nonstoichiometry of the film. Such an effect can result from (i) non-uniform material transport
from target to substrate, and (ii) re-evaporation or re-sputtering from the growing film
surface. The first reason is more usual for laser ablation deposition technique, the second is
typical for long sputtering deposition processes.
Substitution of oxygen with argon in the deposition atmosphere improves surface
quality of YBCO thin films deposited both by laser ablation and DC-sputtering at high
pressure techniques. In the first case, the ablated species are scattered different ways in the
oxygen atmosphere. Addition of argon decreases the inelastic scattering of barium; the
proper part of Ar in the deposition atmosphere makes scattering and, hence, transport of all
atoms uniform.
The YBCO films deposited by DC-sputtering at high pressure technique are Badeficient also, but the reason is re-sputtering of Ba from the growing film as a result of
negative oxygen ions bombardment. Such bombardment can lead also to chemical
interaction of the deposited material with the substrate, as in the case of deposition of
YBCO thin film on the CeO2 buffer layer on sapphire. Substitution of oxygen with argon
not only suppresses ion bombardment of the film, but also increases discharge stability due
to presence of positive Ar+ ions.
The limiting factor of argon substitution is sufficient oxygenation of the growing
oxide film. When oxygen partial pressure is too small, the superconducting quality of the
YBCO thin film decreases and such a decrease cannot be overcome by prolonged
oxygenation after deposition.
The work was supported in part by Danish Research Academy, the RFBR grant 01-02
17990-a, and Young scientists commission of RAS grant #393

Corresponding author: Peter B. Mozhaev, Institute of Radio Engineering and Electronics
RAS, Mokhovaya str., 11, bldg.7, 101999, GSP-9, Moscow, Russian Federation
Phone: (7 095) 203 0935
Fax: (7 095) 203 8414
E-mail: [email protected]
TF1.11.P
STUDIES OF PULSED HIGH-CURRENT ARCS USED TO PREPARE
CARBON FILMS.
S. Muhl*, F. Maya*, S. Rodil*, E. Camps**, M. Villagran*** and A. Garcia***
*Instituto de Investigaciones en Materiales, UNAM, México, D.F. 04510.
**Instituto Nacional de Investigaciones Nucleares, Salazar, Edo. de México.
***Centro de Instrumentos, UNAM, México, D.F. 04510.
Electric arcs have been widely used for the preparation of carbon films. In particular, the
technique of filtered cathode arc is known to be one of the best methods for the production
of diamond-like carbon with high concentrations of sp3-bonded carbon. In 1999 an article
in Nature (Vol. 402, 1999, p. 162) reported the possibility of producing diamond microcrystallites using a high-current arc pulse, >1000A with a 60ms duration, between two
0.5mm diameter graphite rods.
For such high-density plasma systems the relative density of the deposit precursors, as well
as their spatial variation, energy, degree of ionisation, etc. are very important since they
determine the characteristics of the deposits produced. In this paper we report optical
studies: time resolved emission spectroscopy (identification of the emitted species at
different delay times), time resolved photography (temporal and spatial evolution of the
arc) and shadowgraphy (temporal and spatial evolution of the plasma and particle
formation), of a pulsed arc similar to that used in the microcrystalline diamond work.
Additionally, we report the preliminary results of the characterisation of the deposited
carbon films both on a close substrate (as in the report in Nature) and on a variably biased
substrate placed approximately 10cm form the arc.
AUTHOR FOR CORRESPONDENCE: STEPHEN MUHL, ([email protected])
Materials research Institute, UNAM,
Apartado Postal 70-360,
Coyoacan,
Mexico, DF 04510, Mexico.
TF1.12.P
a-C THIN FILM DEPOSITION BY LASER ABLATION
O. Olea-Cardoso a, E. Camps b , L. Escobar-Alarcón b, S. Muhl c,
M. A. Camacho-López d, E. Haro-Poniatowski d.
U.A.E.M, Edo. de México, México
Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apartado
postal 18-1027, México DF 11801, México
c
Instituto de Investigaciones en Materiales, U.N.A.M., México D.F., México
d
Departamento de Física, U.A.M.-I, México D.F., México
a
b
The plasma formed during laser ablation of a carbon target has been studied by
optical emission spectroscopy and Langmuir electrostatic probes in order to investigate the
kinetic energy of the ions and the plasma density as a function of, the distance between the
target and the substrate and the laser intensity. Experiments were carried out under vacuum
(8 x 10-6 Torr), using a Nd:YAG laser with emission at the fundamental line, with a
maximum energy output of 150 mJ. In our experimental conditions the plasma emission is
principally due to C+ (299.26 and 426.7 nm). The ion energies detected varied in a wide
range, from ~50 up to 700 eV, with the highest values corresponding to measurements
inside the plasma plume (~ 3 cm from the target), and the lowest detected with the probe at
distances as far as 16 cm away from the target. The highest plasma densities (8 x 10 12 cm-3)
that could be detected with the probe were measured at 8 cm from the target, and the lowest
(5 x 1011 cm-3) were measured at 16 cm. The characterized plasma regimes were used for
the deposition of a-C films under different conditions of ion energy and plasma density,
allowing the formation of material with different percentages of sp3 bonding. The films
were analyzed using Raman spectroscopy, EELS, EDS and XPS.


Corresponding author *: E. Camps
Tel.: (52) 53297200; Fax.: (52) 53297332; E-mail: [email protected]
Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apartado postal 18-1027, México
DF 11801, México
TF1.13.P
DEPOSITION OF ZnSe FILMS ON QUARTZ SUBSTRATE BY
PULSED LASER ABLATION TECHNIQUE
G. Perna(1,2), V. Capozzi(2,3), A. Minafra(1,2), P.F. Biagi(1,2)
Dipartimento Interateneo di Fisica dell’Università di Bari, Via Amendola 173, I70126 Bari, Italy
(2)
Istituto Nazionale di Fisica della Materia, Sezione di Bari, Via Amendola 173, I70126 Bari, Italy
(3)
Dipartimento di Medicina e Chirurgia dell’Università di Foggia, Viale Pinto, I71100 Foggia, Italy
(1)
Zinc Selenide (ZnSe), having a band gap of about 2.7 eV at room temperature, is
an efficient light emitting semiconductor in the blue-green spectral region.
Therefore, it is a promising materials for optoelectronic applications, as for the
fabrication of light emitting diodes and semiconductor lasers. Recently, there have
been several works about the growth of ZnSe films by pulsed laser ablation (PLA)
technique. One of the major advantages of PLA is a large mobility of the
depositing species, so that multicomponent compounds can be stoichiometrically
grown without the need of any post-deposition ex-situ treatment.
One important aspect in thin films deposition is the substrate selection, because it
determines the lattice mismatch and thermal expansion mismatch. Usually, ZnSe
films are deposited on GaAs substrate, because of the low lattice mismatch
between ZnSe and GaAs (0.27%). However, growth processes on optical windows
and inexpensive substrates are of interest in view of devices applications.
We have deposited ZnSe films on quartz substrate by means of PLA technique.
The structural and optical properties of the deposited films have been investigated
by means of X-ray diffraction (XRD), reflectance, absorption and
photoluminescence (PL) measurements. The XRD spectra have shown that the
films grow highly oriented along the (111) direction. Reflectance and absorption
spectra as a function of the temperature have been analysed by means of classical
models, in order to obtain the temperature dependence of the band gap energy and
line-width broadening. The band gap energy is red-shifted for ZnSe films on
quartz with respect to that of a ZnSe single crystal, because of lattice and thermal
strains. The PL measurements show that PLA is a technique suitable to grow films
having intrinsic luminescence even at room temperature.
TF1.14.P
PROPERTIES OF REACTIVE MAGNETRON SPUTTERED
RUTHENIUM OXIDE THIN FILMS BEFORE AND AFTER PLASMA
IMMERSION ION IMPLANTATION OF NITROGEN
Dalibor Buc a, Dixon T. K. Kwok b, K.C. Lo b, Ricky K. Y. Fu b, H. P. Ho b,
Paul K. Chu b, Ulf Helmersson c
a- Department Of Microelectronics, FEISTU Bratislava, Slovak Republic
b- Department Of Physics, City University of Hong Kong, Hong Kong
c- Thin Film Physics Division, Department Of Physics, Linköping University, Sweden
RuO2 thin films were prepared on Si substrates by reactive unbalanced magnetron
sputtering in Ar + O2 mixture using planar ruthenium target of 50 mm in diameter. Films
were sputtered in constant voltage mode at power of 100 W at different total pressures in
the range from 0.2 to 15 Pa and partial pressure of O2 from 0 to 80% at different
temperatures up to 500 C and negative bias voltage. We investigated the crystallographic
nature of films by x-ray diffraction. EDAX and XPS measurements confirmed the
presence of Ru and O in films, RBS measurements shown changes of the composition with
bias voltage. It was found that there are changes of film structure with partial oxygen and
total pressures, temperature and substrate bias voltage. We evaluated peak shifts of rutile
phase refer to a tensile strain in films material. We used Plasma Immersion Ion
Implantation (PIII) technique to implant nitrogen to the rutile film structure. Colour change
of film material after implantation of nitrogen was measured. We observed
crystallographic structure and compositional changes of implanted material using XRD
measurements and XPS deep profile measurements by comparing measured spectra before
and after implantation. A change of structure of implanted material towards metallic like
structure was found. We measured nano-hardness of as- deposited films and ones
implanted with nitrogen. PIII process considerably decreases nano-hardness of RuO2 films.

Corresponding author *: Tel.421-2-60291322 ; E-mail:[email protected]
Dr. Dalibor Buc, Microelectronics Department FEISTU Bratislava, 812 19 Bratislava,
Slovakia
TF1.15.P
ELECTRODEPOSITION OF NANOCRYSTALLINE Ag-Ni/Cu FILMS
G.K.Strukova*, I.K. Bdikin, D.V.Matveev, S.A.Zver’kov
Institute of Solid State Physics, Chernogolovka, Moscow distr., 142432, Russia
Agx-Ni1-x film alloys on Cu substrates are grown by electrodeposition in unprotondipolar solution of Ag and Ni salts. The films containing from 0% to 95% Ni possible are
grown by changing the electrolyte compound and current density. The dependence of the
grain size from the nickel content in Ag-Ni is investigated. From X-ray spectroscopy
investigation the Ag-Ni films with the content Ni more than 15% the grain size decrease
from 50nm to 3-5nm. By the electron transition microscopy it was shown that the film of
Ag/Ni-50/50 composition is the mechanical intermixture of grains Ag and Ni with the size
3nm.
*Correspond address: [email protected]
TF1.16.P
PROFILE MONITORING AND CALIBRATION OF ION BEAM
DENSITY USING FARADAY CUP DETECTOR
M. Zoriy, F Cerny
Chromium nitride films are known as good protective layers for both corrosion and
wear attack. These coatings have been studying in more detail during recent years. Their
protective capability strongly depends on the deposition conditions [1]. The hardness and
friction properties of chromium nitride coatings depend on structure and orientation of
crystals in the film [2]. The corrosion properties also depend on the porosity/density of the
coatings [3]. The importance of the deposition parameters is critical.
There are many methods for preparation of chromium nitride. One of them is IBAD
(Ion Beam Assisted Deposition) method .The main parameter determining the composition
and properties of the films prepared by IBAD method is the arrival ratio of impinging
nitrogen ions to chromium atoms. [4]
Until now several methods have been used for the controlling of ion flux but results is
not satisfactory yet [5]
For this purpose a High Voltage Engineering Europe B.V. Faraday cup was used.
On the basis of this device we fabricated the equipment for profile monitoring of ion beam
density on the TECVAC 221 Ion Implanter.
This mechanical xy-scanner consists of two steping-motors, Faraday cup detector,
scrolling mechanism and other additional belongings.
Program in C was written to control two steping-motors, which moved the detector into
preferred points of cross sections of the ion beam. XY-scanner can be applied in the region
of dimensions 200x200mm. Other program served to estimate the value of ion beam
density and to plot the graph, which illustrated the profile of ion beam density.
Using our equipment we performed calibration of Ion Implantator – estimated
distribution of ion beam density. Using these data we can perform CrN coatings with
controlled composition and their properties.
[1] R. Sanjines, P. Hones and F. Levy, Thin Solid Films 332 (1998), pp. 225¯229.
[2] M. Pakala and R.Y. Lin. Surf. Coat. Technol. 81 (1996), pp. 233¯239.
[3] L. Cunha, M. Andritschky, L. Rebouta and K. Pischow, Surf. Coat. Technol. 116-119
(1999), pp. 1152¯1160.
[4] P. Ingel, G. Schwarz, Surf. Coat. Technol. 98 (2000) pp.1002-7.
[5] R.Darling, A. Scheidemannm, K. Bhat, Surf. Coat. Technol (2002) pp. 84-93.
Department of Physic, Faculty of Mechanical Engineering,
Czech Technical University in Prague.
Technická 4, 166 07 Praha 6, Czech Republic
[email protected]