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DESCRIPTION
PACKAGE
The high power HV1011-1000L device is a high
voltage silicon enhancement mode RF transistor
designed for L-band pulsed avionics applications
operating over the frequency range of 1030 MHZ
to 1090MHz.
FEATURES
High Power Gain
Excellent Ruggedness
50V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbol
VDSS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
IDSX
PD2
TS
Drain Current
Power Dissipation
Storage Temperature
TJ
Junction
Temperature
Value
95
-10 to
+10
80
TBD
-65 to
+150
200
Unit
V
V
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
1
JC
Parameter
Thermal Resistance
Max
TBD
Unit
°C/W
The device utilizes a RoHS compliant flanged
package with a ceramic lid. The HV1230
package style is qualified for gross leak test –
MIL-STD-883, Method 1014.
RUGGEDNESS
The HV1011-1000L device is capable of
withstanding an output load mismatch
corresponding to a 20:1 VSWR at rated output
power over all phase angles and operating
voltage across the frequency band of
operation.
Symbol
LMT1
Parameter
Load
Mismatch
Tolerance
Test Condition
POUT = 1000W
Max
20:1
Units
VSWR
F = 1030 MHz
ELECTRICAL CHARACTERISTICS
Symbol
VBR(DSS)
IDSS
IGSS
GP1
IRL1
1
D
1
PD
BD1
1
2
Parameter
Drain-Source Breakdown
Drain Leakage Current
Gate Leakage Current
Power Gain
Input Return Loss
Drain Efficiency
Pulse Droop
Burst Droop
Conditions
VGS=0V,ID=10mA
VGS=0V,VDS=50V
VGS=5V,VDS=0V
POUT=1000W, F=1030 MHz
POUT=1000W, F=1030 MHz
POUT=1000W, F=1030 MHz
POUT=1000W, F=1030 MHz
POUT=1000W, F=1030 MHz
Typ
102
<500
<10
15.5
10
50
<0.20
<0.20
Units
V
A
A
dB
dB
%
dB
dB
Under Pulse Conditions: Pulse Width = 32 s on/18 s off x 48, repeat every 24ms with VDD=50V, IDQ=200mA
Rated at TCASE = 25°C
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200
Specifications are subject to change without notice.
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Typical device performance under Class AB mode of operation and RF signal conditions of 50!s pulse width and
2% duty cycle with VDD = 50V and IDQ = 100mA.
Typical device performance under Class AB mode of operation and RF burst conditions of 32!s on/18!s off x 48,
repeated every 24ms with VDD = 50V and IDQ = 100mA.
PACKAGE DIMENSIONS
ASI
PART NUMBER
JDATE CODE
inches
mm
DRAIN
Note: Drawing is not actual size.
GATE
SOURCE
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