Download LET20030C

LET20030C
RF power transistor from the LdmoST family
of N-channel enhancement-mode lateral MOSFETs
Preliminary data
Features
■
Excellent thermal stability
■
Common source configuration
■
POUT (@28 V) = 45 W with 13.9 dB gain @
2000 MHz
■
POUT (@36 V) = 53 W with 13.3 dB gain @
2000 MHz
■
BeO free package
■
In compliance with the 2002/95/EC European
directive
M243
epoxy sealed
Description
Figure 1.
The LET20030C is a common source N-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to 2
GHz. The LET20030C is designed for high gain
and broadband performance operating in
common source mode at 36 V. It is ideal for base
station applications requiring high linearity.
Table 1.
July 2011
Pin out
1
3
2
1. Drain
2. Gate
3. Source
Device summary
Order code
Package
Branding
LET20030C
M243
LET20030C
Doc ID 019038 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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Maximum ratings
1
LET20030C
Maximum ratings
Table 2.
Absolute maximum ratings (TCASE = 25 °C)
Symbol
Value
Unit
V(BR)DSS
Drain-source voltage
80
V
VGS
Gate-source voltage
-0.5 to +15
V
9
A
Power dissipation (@ TC = 70 °C)
108
W
Max. operating junction temperature
200
°C
-65 to +150
°C
Value
Unit
1.2
°C/W
Drain current
ID
PDISS
TJ
TSTG
Table 3.
Symbol
Rth(JC)
2/9
Parameter
Storage temperature
Thermal data
Parameter
Junction-case thermal resistance
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LET20030C
2
Electrical characteristics
Electrical characteristics
TC = 25 °C
Table 4.
Static
Symbol
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
VGS = 0 V; IDS = 10 mA
IDSS
VGS = 0 V; VDS = 28 V
1
µA
IGSS
VGS = 20 V; VDS = 0 V
1
µA
5.0
V
1.2
V
80
V
VGS(Q)
VDS = 28 V; ID = 300 mA
VDS(ON)
VGS = 10 V; ID = 3 A
GFS
VDS = 10 V; ID = 3 A
CISS
VGS = 0 V; VDS = 28 V; f = 1 MHz
58
pF
COSS
VGS = 0 V; VDS = 28 V; f = 1 MHz
29
pF
CRSS
VGS = 0 V; VDS = 28 V; f = 1 MHz
0.8
pF
Table 5.
Symbol
2.0
0.9
2.5
mho
Dynamic
Test conditions
Min.
Typ.
Max.
Unit
POUT
VDD = 28 V; IDQ = 400 mA; PIN = 2 W; f = 2000 MHz
30
45
-
W
GPS
VDD = 28 V; IDQ = 400 mA; PIN = 2 W; f = 2000 MHz
12.5
13.9
-
dB
hD
VDD = 28 V; IDQ = 400 mA; PIN = 2 W; f = 2000 MHz
45
50
-
%
Load
mismatch
VDD = 28 V; IDQ = 400 mA; PIN = 2 W; f = 2000 MHz
All phase angles
10:1
-
VSWR
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Impedance data
3
LET20030C
Impedance data
Figure 2.
Impedance data
D
ZDL
Typical drain
load
Typical
input
G
Zin
S
Table 6.
4/9
Impedance data
Frequency
ZIN (Ω)
ZDL (Ω)
1800
TBD
TBD
1900
TBD
TBD
2000
TBD
TBD
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LET20030C
Typical performances
Typical performances
Figure 3.
Gain vs output power and bias
current
Figure 4.
80
18
18
Idq = 200mA
17
Idq = 400mA
Idq = 600mA
Freq = 2000 MHz
VDD = 28V
IDQ = 400mA
17
Idq = 800mA
70
16
60
15
50
14
40
13
13
30
12
12
Gain (dB)
16
Gain (dB)
Gain and efficiency vs output
power
15
14
Freq = 2000 MHz
VDD = 28V
11
20
Efficiency
Gain
10
11
0
10
10
1
10
0
100
10
20
30
40
50
60
Output Power (W)
Output power (W)
AM09292V1
AM09291V1
Figure 5.
Efficiency (%)
4
Gain vs output power and supply
voltage
Figure 6.
Efficiency vs output power supply
voltage
50
36V
32V
30V
28V
26V
Freq = 2000 MHz
IDQ = 400mA
24V
Freq = 2000 MHz
IDQ = 400mA
30
20
20V
16V
1
40
Efficiency (%)
Gain (dB)
60
18
17
16
15
14
13
12
11
10
9
8
10
100
Output Power (W)
36V
26V
10
32V
24V
30V
20V
28V
16V
0
0
10
20
30
40
50
60
70
Output Power (W)
AM09293V1
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AM09294V1
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Typical performances
Figure 7.
LET20030C
IMD vs output power @ VDD = 28V
Figure 8.
-10
IMD3
IMD5
-10
IMD7
-20
F1 = 1998 MHz
F2 = 2000 MHz
VDD = 28V
IDQ = 400mA
-40
-50
IMD5
IMD7
F1 = 1998 MHz
F2 = 2000 MHz
VDD = 32V
IDQ = 400mA
-30
IMD (dBc)
IMD (dBc)
IMD3
-20
-30
IMD vs output power @ VDD = 32V
-40
-50
-60
-60
-70
-70
-80
-80
1
10
Output Power (WPEP)
1
100
10
100
Output Power (WPEP)
AM09295V1
Efficiency (%)
40
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
Figure 10. ACPR and efficiency vs output
power @ VDD = 32V
ACPR and efficiency vs output
power @ VDD = 28V
F = 2000 MHz
IS95 modulaon
9 channel FWD
VDD = 28V
IDQ = 400mA
750 KHz
1.98 MHz
ACPR (dBc)
ACPR (dBc)
Efficiency (%)
Figure 9.
Efficiency
0.1
AM10085v1
1
10
Output power (W)
100
40
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
F = 2000 MHz
IS95 modulaon
9 channel FWD
VDD = 32V
IDQ = 400mA
750 KHz
1.98 MHz
Efficiency
0.1
1
Output Power (W)
AM10086v1
6/9
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10
100
AM10086v1
LET20030C
5
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 7.
M243 (.230 x .360 2L N/HERM W/FLG) mechanical data
mm
inch
Dim.
Min.
Typ
Max.
Min.
Typ
Max.
A
5.21
5.72
0.205
0.225
B
5.46
6.48
0.215
0.255
C
5.59
6.1
0.22
0.24
D
14.27
0.562
E
20.07
20.57
0.79
0.81
F
8.89
9.4
0.35
0.37
G
0.1
0.15
0.004
0.006
H
3.18
4.45
0.125
0.175
I
1.83
2.24
0.072
0.088
J
1.27
1.78
0.05
0.07
Figure 11. M243 package dimensions
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Revision history
6
LET20030C
Revision history
Table 8.
8/9
Document revision history
Date
Revision
11-Jul-2011
1
Changes
Initial release.
Doc ID 019038 Rev 1
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LET20030C
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