Download VS-UFB80FA20 Insulated Ultrafast Rectifier Module, 80 A

VS-UFB80FA20
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Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 80 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (TJ max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
SOT-227
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
VR
200 V
IF(AV) per module at TC = 129 °C
80 A
trr
27 ns
Type
Modules - Diode FRED Pt®
Package
SOT-227
The VS-UFB80FA20 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
200
V
Cathode to anode voltage
VR
Continuous forward current per diode
IF
TC = 137 °C
40
Single pulse forward current per diode
IFSM
TC = 25 °C
280
PD
TC = 137 °C
76
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
VISOL
TJ, TStg
Any terminal to case, t = 1 minute
A
W
2500
V
-55 to +175
°C
Revision: 31-Mar-16
Document Number: 93607
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VS-UFB80FA20
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ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
Forward voltage
SYMBOL
VBR
VFM
Reverse leakage current
IRM
Junction capacitance
CT
TEST CONDITIONS
IR = 100 μA
MIN.
TYP.
MAX.
UNITS
200
-
-
IF = 30 A
-
0.96
1.08
IF = 30 A, TJ = 175 °C
-
0.77
0.89
VR = VR rated
-
-
50
μA
V
TJ = 175 °C, VR = VR rated
-
-
1
mA
VR = 200 V
-
119
-
pF
UNITS
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
SYMBOL
trr
IRRM
Qrr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
-
27
-
TJ = 25 °C
-
34
-
TJ = 125 °C
-
53
-
-
3.5
-
-
7.0
-
TJ = 25 °C
TJ = 125 °C
IF = 30 A
dIF/dt = 200 A/μs
VR = 100 V
TJ = 25 °C
-
53
-
TJ = 125 °C
-
184
-
MIN.
TYP.
MAX.
-
-
1
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
SYMBOL
TEST CONDITIONS
RthJC
RthCS
-
-
0.5
Flat, greased surface
-
0.10
-
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.3 (11.5)
Nm (lbf.in)
Weight
Mounting torque
Case style
UNITS
°C/W
SOT-227
Revision: 31-Mar-16
Document Number: 93607
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB80FA20
Vishay Semiconductors
1000
1000
TJ = 175 °C
TJ = 25 °C
10
1
TJ = 175 °C
100
IR - Reverse Current (µA)
100
10
1
0.1
TJ = 25 °C
0.01
0.001
0
0.5
1
1.5
2
0
2.5
100
50
200
150
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Junction Capacitance - CT (pF)
IF - Instantaneous Forward Current (A)
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TJ = 25 °C
100
10
1
10
100
1000
Reverse Voltage - VR (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
Single pulse
(thermal resistance)
0.1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
DC
0.01
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode)
Revision: 31-Mar-16
Document Number: 93607
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB80FA20
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Vishay Semiconductors
70
150
125
75
40
TJ = 25 ˚ C
30
Square Wave (D = 0.5)
Rated VR applied
50
TJ = 125 ˚ C
50
DC
100
20
25
0
10
0
20
40
60
80
100
100
120
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
80
550
500
70
450
60
If = 30 A
Vrr = 100 V
400
50
Qrr (nC)
Average Power Loss (W)
If = 30 A
Vrr = 100 V
60
trr (ns)
Allowable Case Temperature (°C)
175
RMS Limit
40
D = 0.05
D = 0.10
D = 0.20
30
20
10
20
30
40
50
60
300
250
150
D = 0.33
100
D = 0.50
50
DC
10
70
TJ = 125 °C
200
0
0
350
80
TJ = 25 °C
0
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 31-Mar-16
Document Number: 93607
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB80FA20
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 31-Mar-16
Document Number: 93607
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB80FA20
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
UF
B
80
F
A
20
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Ultrafast rectifier
3
-
Ultrafast Pt diffused
4
-
Current rating (80 = 80 A)
5
-
Circuit configuration (2 separate diodes, parallel pin-out)
6
-
Package indicator (SOT-227 standard insulated base)
7
-
Voltage rating (20 = 200 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
2 separate diodes,
parallel pin-out
4
3
1
2
4
3
1
2
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 31-Mar-16
Document Number: 93607
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer

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Revision: 08-Feb-17
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Document Number: 91000