Survey
* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
Download ppt - Purdue Engineering
Document related concepts
Transcript
Design ideas for Tunnel-FETs Objective •To explore design ideas for voltage scaling of transistors. Approach •VDD scaling : Difficult in MOSFETs, possible in TFETs. •gFET: Larger tunneling area gives higher ION than conventional TFETs. •Modified and optimized gFET design to meet ITRS requirements. Lateral Tunneling Vertical Tunneling vs. P-I-N TFET gFET : Band to Band Tunneling region Impact •gFET with high ION and low IOFF will provide a viable alternative for VDD scaling to reduce power consumption. Samarth Agarwal, Mathieu Luisier & Gerhard Klimeck
