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Proposed RFHA1000 50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 Features • Advanced GaN HEMT Technology • Output Power of 15W • Advanced Heat-Sink Technology • 50–1000 MHz Instantaneous bandwidth • • Input Internally Matched to 50Ω 28V Operation Typical Performance o Pout 41.5dBm Functional Block Diagram o Gain 17dB o Power Added Efficiency 60% • -45oC to 85oC Operating Temperature • Large signal models available • EAR99 Export Control Product Description The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these Applications high-performance amplifiers achieve high efficiency, flat gain and large instantaneous • Class AB Operation for Public Mobile Radio • Power Amplifier Stage for Commercial Wireless Infrastructure • General Purpose TX Amplification • • Test Instrumentation Civilian & Military Radar bandwidth in a single amplifier design. The RFHA1000 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. Ordering Information RFHA1000 GaN Wide-Band Power Amplifier RFHA1000PCBA-410 Fully Assembled Evaluation Board: 50 – 1000 MHz; 28V operation Optimum Technology Matching® Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS RF MEMS InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100824 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 1 of 9 Proposed RFHA1000 50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 175 V Gate Voltage (VG) -8 to +2 V 32 V RF- Input Power 31 dBm Maximum Gate Current (IG) TBD uA Operational Voltage Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 0 C Operating Temperature Range (TL) -40 to +85 0 C 200 0 C Operating Junction Temperature (TJ) Human Body Model Class 1A MTTF (TJ < 200 0 C, 95% Confidence Limits)* 3E + 06 Thermal Resistance, Rth (junction to case) Hours 6 0 C/W * MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two. Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE Parameter Specification Min. Typ. Max. Unit 28 32 V -3 -2.5 Condition Recommended Operating Conditions Drain Voltage (Vdsq) Gate Voltage (Vgsq) -4 Drain Bias Current 88 RF Input Power (Pin) Input Source VSWR V mA 30 10:1 dBm 1000 MHz RF Performance Characteristics Frequency Range 50 Small signal 3dB bandwidth Linear Gain 17 dB Pout = 30 dBm, 100 MHz Power Gain 14 dB P3dB, 100 MHz dB Pout = 30 dBm, 50-1000 MHz Gain flatness -1.5 Gain Variation with Temperature Input Return Loss (S11) 1.5 -0.02 dB/ºC 41.5 dBm 60 % -10 Output Power (P3dB) Power Added Efficiency (PAE) dB RF Functional Tests 100-1000 MHz 100-1000 MHz [1],[2] Vgs (q) -3.8 V Gain TBD 16 dB Power Gain TBD 14 dB Pin = 27 dBm -10 dB Pin = 27 dBm Input Return Loss Pin = 10 dBm Output Power TBD 41.5 dBm Pin = 27 dBm Power Added Efficiency (PAE) TBD 60 % Pin = 27 dBm [1] Test Conditions: Vdsq=28V, Idq=88mA, CW, f=500MHz, T=25ºC [2] Performance in a standard tuned test fixture RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100824 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 2 of 9 Proposed RFHA1000 50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER Typical Performance in standard fixed tuned test fixture matched for 50-1000 MHz (T=25°C, unless noted) RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100824 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 3 of 9 Proposed RFHA1000 50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER Typical Performance in standard fixed tuned test fixture matched for 50-1000 MHz (T=25°C, unless noted) RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100824 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 4 of 9 Proposed RFHA1000 50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER Package Drawing (All dimensions in mm) Package Style: Ceramic SO8 Pin Function Description 1 Vgs Gate DC Bias pin 2 RF IN RF Input 3 RF IN RF Input 4 N/C No Connect / Ground 5 N/C No Connect / Ground 6 RF OUT / VDS RF Output / Drain DC Bias pin 7 RF OUT / VDS RF Output / Drain DC Bias pin 8 N/C No Connect Backside GND Ground RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100824 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 5 of 9 Proposed RFHA1000 50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER Bias Instruction for RFHA1000 Evaluation Board • ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. • Evaluation board requires additional external fan cooling. • Connect all supplies before powering evaluation board. 1. Connection RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the Vg and Vd grounds are also connected to this ground terminal. 3. Apply -5V to VG2. 4. Apply 28V to VD2. 5. Increase VG2 until drain current reaches 88mA or desired bias point. 6. Turn on the RF input. • Typical test data provided is measured to SMA connector reference plane, and include evaluation board / broadband bias network mismatch and losses RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100824 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 6 of 9 Propose ed RFHA1000 0 50–1000 0 MHZ, 15W GAN WIDE-B BAND POWER R AMPLIFIER R Evaluation n Board Sch hematic Evvaluation Bo oard Bill of Materials Com mponent Value Manufacturer Part Number C1 1, C2 2400 pF Dielectric Labs Inc C C08BL242X-5UN-X0 C C13 100 pF Panasonic ECJ-1VC1H101 1J C C15 22 µF AVX Corp TAJA226K010R R C C25 22 µF AVX Corp TAJD226M035R C Cout 3.3 pF ATC 100A3R3BW150 0XC R R11 470 Ω Panasonic ERJ-3GEYJ471 1 L11, L12 2, L23, L24 0 ohms Panasonic ERJ-8GEY0R00 0 L L21 0.9 µH Coilcraft 1008AF-901XJLLC LL20 C11, C12, C14 4, C16, C17, C18,, C19, C20, C21 1, C22, C23, C24,, C31, C32, C33 3, C34, R12, R21,, R22, R23, R24 4, R31, L13, L14,, L L22 5.4 nH Coilcraft 0906-5_LB N USED NOT - - RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enab bling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltiimateBlueTM are trademarks of RFMD, LLC. L BLUETOOTH is a trademark owned d by Bluetooth SIG, Inc., U.S.A. and licen nsed for use by RFMD. All other trade na ames, trademarks and registered trademarks are the property of their respective owners. ©200 09, RF Micro Devices, Inc. Prelim DS1 100824 762 28 Thorndike Road, Greensboro, G NC 274 409-9421 – For sale es or technical Sup pport, contact RFMD D at (+1) 336-678-5 5570 or sales-suppo [email protected] 7 of 9 Propose ed RFHA1000 0 50–1000 0 MHZ, 15W GAN WIDE-B BAND POWER R AMPLIFIER R Evaluatio on Board La ayout Device e Impedance es* RFHA1000PCBA A-410 (30-2500 MHz) M * Frequenccy Z Source (Ω) Z Load d (Ω) 50 MHzz TBD TBD D 100 MHzz TBD TBD D 200 MHzz TBD TBD D 400 MHzz TBD TBD D 500 MHzz TBD TBD D 600 MHzz TBD TBD D 800 MHzz TBD TBD D 1000 MH Hz TBD TBD D Devvice impedances reported are the e measured evaluation board impedances chosen for a trad deoff of efficiency and peak power performance acro oss the entire freq quency bandwidth h. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enab bling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltiimateBlueTM are trademarks of RFMD, LLC. L BLUETOOTH is a trademark owned d by Bluetooth SIG, Inc., U.S.A. and licen nsed for use by RFMD. All other trade na ames, trademarks and registered trademarks are the property of their respective owners. ©200 09, RF Micro Devices, Inc. Prelim DS1 100824 762 28 Thorndike Road, Greensboro, G NC 274 409-9421 – For sale es or technical Sup pport, contact RFMD D at (+1) 336-678-5 5570 or sales-suppo [email protected] 8 of 9 Proposed RFHA1000 50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER REVISION RECORD REV 5 DESCRIPTION OF CHANGE MODIFIED By DATE KK 08/24/2010 Modified to the new format RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc. Prelim DS100824 7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical Support, contact RFMD at (+1) 336-678-5570 or [email protected] 9 of 9