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Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
Features
Advanced GaN HEMT Technology
Output Power of 15W
Advanced Heat-Sink Technology
50–1000 MHz Instantaneous bandwidth
Input Internally Matched to 50
28V Operation Typical Performance
o Pout 41.5dBm
Functional Block Diagram
o Gain 17dB
o Power Added Efficiency 60%
-45oC to 85oC Operating Temperature
Large signal models available
EAR99 Export Control
Applications
Class AB Operation for Public Mobile
Radio
Power Amplifier Stage for Commercial
Wireless Infrastructure
General Purpose TX Amplification
Test Instrumentation
Civilian & Military Radar
Product Description
The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applications
such as wireless infrastructure, RADAR, two way radios and general purpose amplification.
Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these
high-performance amplifiers achieve high efficiency, flat gain and large instantaneous
bandwidth in a single amplifier design. The RFHA1000 is an input matched GaN transistor
packaged in an air cavity ceramic package which provides excellent thermal stability
through the use of advanced heat sink and power dissipation technologies. Ease of
integration is accomplished through the incorporation of optimized input matching network
within the package that provides wideband gain and power performance in a single
amplifier. An external output match offers the flexibility of further optimizing power and
efficiency for any sub-band within the overall bandwidth.
Ordering Information
RFHA1000
GaN Wide-Band Power Amplifier
RFHA1000PCBA-410 Fully Assembled Evaluation Board: 50 – 1000 MHz; 28V operation
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
RF MEMS
InGaP HBT
SiGe HBT
Si BJT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM, PowerStar®, POLARIS TM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS110118
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
1 of 10
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Absolute Maximum Ratings Parameter
Rating
Unit
Drain Voltage (VD)
150
V
Gate Voltage (VG)
-8 to +2
V
32
V
RF- Input Power
31
dBm
Maximum Gate Current (IG)
TBD
uA
Operational Voltage
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
0
C
Operating Temperature Range (TL)
-40 to +85
0
C
200
0
C
Operating Junction Temperature (TJ)
Human Body Model
Class 1A
MTTF (TJ < 200 0 C, 95% Confidence Limits)*
3E + 06
Hours
Thermal Resistance, Rth (junction to case)
0 C/W
6
measured at TC=850C, DC bias only
* MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability. Refer to product
qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must
not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE
Parameter
Specification
Min. Typ. Max.
Unit
28
32
V
-3
-2.5
Condition
Recommended Operating Conditions
Drain Voltage (Vdsq)
Gate Voltage (Vgsq)
-4
Drain Bias Current
88
RF Input Power (Pin)
Input Source VSWR
V
mA
30
10:1
dBm
1000
MHz
RF Performance Characteristics
Frequency Range
50
Small signal 3dB bandwidth
Linear Gain
17
dB
Pout = 30 dBm, 100 MHz
Power Gain
14
dB
P3dB, 100 MHz
dB
Pout = 30 dBm, 50-1000 MHz
Gain flatness
-1.5
Gain Variation with Temperature
Input Return Loss (S11)
1.5
-0.02
-10
Output Power (P3dB)
Power Added Efficiency (PAE)
dB/ºC
dB
41.5
dBm
100-1000 MHz
60
%
100-1000 MHz
-3.8
V
RF Functional Tests
[1],[2]
Vgs (q)
Gain
TBD
16
dB
Pin = 10 dBm
Power Gain
TBD
14
dB
Pin = 27 dBm
-10
dB
Pin = 27 dBm
Input Return Loss
Output Power
TBD
41.5
dBm
Pin = 27 dBm
Power Added Efficiency (PAE)
TBD
60
%
Pin = 27 dBm
[1] Test Conditions: Vdsq=28V, Idq=88mA, CW, f=500MHz, T=25ºC
[2] Performance in a standard tuned test fixture
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS110118
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
2 of 10
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Typical Performance in standard fixed tuned test fixture matched for 50-1000 MHz (T=25°C, unless noted)
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS110118
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
3 of 10
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Typical Performance in standard fixed tuned test fixture matched for 50-1000 MHz (T=25°C, unless noted)
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS110118
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
4 of 10
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Typical Performance in standard fixed tuned test fixture matched for 50-1000 MHz (T=25°C, unless noted)
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS110118
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
5 of 10
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Package Drawing
(All dimensions in mm)
Package Style: Ceramic SO8
Pin
Function
Description
1
Vgs
Gate DC Bias pin
2
RF IN
RF Input
3
RF IN
RF Input
4
N/C
No Connect
5
N/C
No Connect
6
RF OUT / VDS
RF Output / Drain DC Bias pin
7
RF OUT / VDS
RF Output / Drain DC Bias pin
8
N/C
No Connect
Backside
GND
Ground
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS110118
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
6 of 10
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Bias Instruction for RFHA1000 Evaluation Board
•
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
•
Evaluation board requires additional external fan cooling.
•
Connect all supplies before powering evaluation board.
1. Connection RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the Vg and Vd grounds are also connected to this ground terminal.
3. Apply -5V to VG2.
4. Apply 28V to VD2.
5. Increase VG2 until drain current reaches 88mA or desired bias point.
6. Turn on the RF input.
•
Typical test data provided is measured to SMA connector reference plane, and include evaluation board / broadband bias network
mismatch and losses
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS110118
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
7 of 10
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Evaluation Board Schematic
Evaluation Board Bill of Materials
Component
Value
Manufacturer
Part Number
C1, C2
2400 pF
Dielectric Labs Inc
C08BL242X-5UN-X0
C13
100 pF
Panasonic
ECJ-1VC1H101J
22 F
AVX Corp
TAJA226K010R
C15
C25
22 F
AVX Corp
TAJD226M035R
Cout
3.3 pF
ATC
100A3R3BW150XC
R11
470
Panasonic
ERJ-3GEYJ471
L11, L12, L23, L24
0 ohms
Panasonic
ERJ-8GEY0R00
L21
0.9 H
Coilcraft
1008AF-901XJLC
L20
C11, C12, C14, C16, C17, C18,
C19, C20, C21, C22, C23, C24,
C31, C32, C33, C34, R12, R21,
R22, R23, R24, R31, L13, L14,
L22
5.4 nH
Coilcraft
0906-5_LB
NOT USED
-
-
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS110118
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
8 of 10
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Evaluation Board Layout
Device Impedances*
RFHA1000PCBA-410 (50-1000 MHz)
*
Frequency
Z Source ( )
Z Load ( )
50 MHz
49.94-j1.31
48.23+j7.01
100 MHz
50.00-j1.36
49.11+j1.28
200 MHz
49.58-j2.22
46.77-j3.34
300 MHz
49.17-j3.06
42.97-j5.24
400 MHz
48.44-j3.95
38.41-j5.24
500 MHz
47.59-j4.53
34.12-j3.65
600 MHz
46.75-j5.11
30.12-j0.89
700 MHz
45.49-j5.38
26.50+j2.80
800 MHz
44.80-j5.41
23.80+j6.96
900 MHz
43.67-j5.32
21.23+j11.57
1000 MHz
42.99-j5.01
19.29+j16.62
Device impedances reported are the measured evaluation board impedances chosen for a
tradeoff of efficiency and peak power performance across the entire frequency bandwidth.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS110118
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
9 of 10
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
REVISION RECORD
REV
DESCRIPTION OF CHANGE
MODIFIED
By
DATE
5
Modified to the new format
KK
08/24/2010
6
Absolute Maximum Ratings - Drain Voltage changed from
175V to 150V. Added to thermal resistance specification measured at Tc=850C, DC bias only.
KK
09/29/2010
7
Added linearity plots and Zsource/Zload data, removed Ground
description from Pin 4 & 5 and updated schematic to reflect it
KK
01/18/2011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity TM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS110118
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
10 of 10