Download RFHA1000 - Skyworks Store

Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
Features
•
Advanced GaN HEMT Technology
•
Output Power of 15W
•
Advanced Heat-Sink Technology
•
50–1000 MHz Instantaneous bandwidth
•
•
Input Internally Matched to 50Ω
28V Operation Typical Performance
o Pout 41.5dBm
Functional Block Diagram
o Gain 17dB
o Power Added Efficiency 60%
•
-45oC to 85oC Operating Temperature
•
Large signal models available
•
EAR99 Export Control
Product Description
The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applications
such as wireless infrastructure, RADAR, two way radios and general purpose amplification.
Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these
Applications
high-performance amplifiers achieve high efficiency, flat gain and large instantaneous
•
Class AB Operation for Public Mobile
Radio
•
Power Amplifier Stage for Commercial
Wireless Infrastructure
•
General Purpose TX Amplification
•
•
Test Instrumentation
Civilian & Military Radar
bandwidth in a single amplifier design. The RFHA1000 is an input matched GaN transistor
packaged in an air cavity ceramic package which provides excellent thermal stability
through the use of advanced heat sink and power dissipation technologies. Ease of
integration is accomplished through the incorporation of optimized input matching network
within the package that provides wideband gain and power performance in a single
amplifier. An external output match offers the flexibility of further optimizing power and
efficiency for any sub-band within the overall bandwidth.
Ordering Information
RFHA1000
GaN Wide-Band Power Amplifier
RFHA1000PCBA-410 Fully Assembled Evaluation Board: 50 – 1000 MHz; 28V operation
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
RF MEMS
InGaP HBT
SiGe HBT
Si BJT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100824
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
1 of 9
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Absolute Maximum Ratings Parameter
Rating
Unit
Drain Voltage (VD)
175
V
Gate Voltage (VG)
-8 to +2
V
32
V
RF- Input Power
31
dBm
Maximum Gate Current (IG)
TBD
uA
Operational Voltage
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
0
C
Operating Temperature Range (TL)
-40 to +85
0
C
200
0
C
Operating Junction Temperature (TJ)
Human Body Model
Class 1A
MTTF (TJ < 200 0 C, 95% Confidence Limits)*
3E + 06
Thermal Resistance, Rth (junction to case)
Hours
6
0
C/W
* MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability. Refer to product
qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must
not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE
Parameter
Specification
Min. Typ. Max.
Unit
28
32
V
-3
-2.5
Condition
Recommended Operating Conditions
Drain Voltage (Vdsq)
Gate Voltage (Vgsq)
-4
Drain Bias Current
88
RF Input Power (Pin)
Input Source VSWR
V
mA
30
10:1
dBm
1000
MHz
RF Performance Characteristics
Frequency Range
50
Small signal 3dB bandwidth
Linear Gain
17
dB
Pout = 30 dBm, 100 MHz
Power Gain
14
dB
P3dB, 100 MHz
dB
Pout = 30 dBm, 50-1000 MHz
Gain flatness
-1.5
Gain Variation with Temperature
Input Return Loss (S11)
1.5
-0.02
dB/ºC
41.5
dBm
60
%
-10
Output Power (P3dB)
Power Added Efficiency (PAE)
dB
RF Functional Tests
100-1000 MHz
100-1000 MHz
[1],[2]
Vgs (q)
-3.8
V
Gain
TBD
16
dB
Power Gain
TBD
14
dB
Pin = 27 dBm
-10
dB
Pin = 27 dBm
Input Return Loss
Pin = 10 dBm
Output Power
TBD
41.5
dBm
Pin = 27 dBm
Power Added Efficiency (PAE)
TBD
60
%
Pin = 27 dBm
[1] Test Conditions: Vdsq=28V, Idq=88mA, CW, f=500MHz, T=25ºC
[2] Performance in a standard tuned test fixture
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100824
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
2 of 9
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Typical Performance in standard fixed tuned test fixture matched for 50-1000 MHz (T=25°C, unless noted)
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100824
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
3 of 9
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Typical Performance in standard fixed tuned test fixture matched for 50-1000 MHz (T=25°C, unless noted)
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100824
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
4 of 9
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Package Drawing
(All dimensions in mm)
Package Style: Ceramic SO8
Pin
Function
Description
1
Vgs
Gate DC Bias pin
2
RF IN
RF Input
3
RF IN
RF Input
4
N/C
No Connect / Ground
5
N/C
No Connect / Ground
6
RF OUT / VDS
RF Output / Drain DC Bias pin
7
RF OUT / VDS
RF Output / Drain DC Bias pin
8
N/C
No Connect
Backside
GND
Ground
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100824
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
5 of 9
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
Bias Instruction for RFHA1000 Evaluation Board
•
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
•
Evaluation board requires additional external fan cooling.
•
Connect all supplies before powering evaluation board.
1. Connection RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the Vg and Vd grounds are also connected to this ground terminal.
3. Apply -5V to VG2.
4. Apply 28V to VD2.
5. Increase VG2 until drain current reaches 88mA or desired bias point.
6. Turn on the RF input.
•
Typical test data provided is measured to SMA connector reference plane, and include evaluation board / broadband bias network
mismatch and losses
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100824
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
6 of 9
Propose
ed
RFHA1000
0
50–1000
0 MHZ, 15W GAN WIDE-B
BAND POWER
R AMPLIFIER
R
Evaluation
n Board Sch
hematic
Evvaluation Bo
oard Bill of Materials
Com
mponent
Value
Manufacturer
Part Number
C1
1, C2
2400 pF
Dielectric Labs Inc
C
C08BL242X-5UN-X0
C
C13
100 pF
Panasonic
ECJ-1VC1H101
1J
C
C15
22 µF
AVX Corp
TAJA226K010R
R
C
C25
22 µF
AVX Corp
TAJD226M035R
C
Cout
3.3 pF
ATC
100A3R3BW150
0XC
R
R11
470 Ω
Panasonic
ERJ-3GEYJ471
1
L11, L12
2, L23, L24
0 ohms
Panasonic
ERJ-8GEY0R00
0
L
L21
0.9 µH
Coilcraft
1008AF-901XJLLC
LL20
C11, C12, C14
4, C16, C17, C18,,
C19, C20, C21
1, C22, C23, C24,,
C31, C32, C33
3, C34, R12, R21,,
R22, R23, R24
4, R31, L13, L14,,
L
L22
5.4 nH
Coilcraft
0906-5_LB
N USED
NOT
-
-
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enab
bling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltiimateBlueTM are trademarks of RFMD, LLC.
L
BLUETOOTH is a trademark owned
d by Bluetooth SIG, Inc., U.S.A. and licen
nsed for use by RFMD. All other trade na
ames, trademarks and registered
trademarks are the property of their respective owners. ©200
09, RF Micro Devices, Inc.
Prelim DS1
100824
762
28 Thorndike Road, Greensboro,
G
NC 274
409-9421 – For sale
es or technical
Sup
pport, contact RFMD
D at (+1) 336-678-5
5570 or sales-suppo
[email protected]
7 of 9
Propose
ed
RFHA1000
0
50–1000
0 MHZ, 15W GAN WIDE-B
BAND POWER
R AMPLIFIER
R
Evaluatio
on Board La
ayout
Device
e Impedance
es*
RFHA1000PCBA
A-410 (30-2500 MHz)
M
*
Frequenccy
Z Source (Ω)
Z Load
d (Ω)
50 MHzz
TBD
TBD
D
100 MHzz
TBD
TBD
D
200 MHzz
TBD
TBD
D
400 MHzz
TBD
TBD
D
500 MHzz
TBD
TBD
D
600 MHzz
TBD
TBD
D
800 MHzz
TBD
TBD
D
1000 MH
Hz
TBD
TBD
D
Devvice impedances reported are the
e measured evaluation board impedances chosen for a
trad
deoff of efficiency and peak power performance acro
oss the entire freq
quency bandwidth
h.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enab
bling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltiimateBlueTM are trademarks of RFMD, LLC.
L
BLUETOOTH is a trademark owned
d by Bluetooth SIG, Inc., U.S.A. and licen
nsed for use by RFMD. All other trade na
ames, trademarks and registered
trademarks are the property of their respective owners. ©200
09, RF Micro Devices, Inc.
Prelim DS1
100824
762
28 Thorndike Road, Greensboro,
G
NC 274
409-9421 – For sale
es or technical
Sup
pport, contact RFMD
D at (+1) 336-678-5
5570 or sales-suppo
[email protected]
8 of 9
Proposed
RFHA1000
50–1000 MHZ, 15W GAN WIDE-BAND POWER AMPLIFIER
REVISION RECORD
REV
5
DESCRIPTION OF CHANGE
MODIFIED
By
DATE
KK
08/24/2010
Modified to the new format
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100824
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or [email protected]
9 of 9