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WTT-LED-BOARD-2013.LAY [Board 1] 31-10-2013 15:11:08 WAH WANG HOLDINGS (HONG KONG) CO., LTD. Factory : WAH WANG OPTOELECTRONIC (SHENZHEN) CO LTD. Wah Wang Data Sheet For 5mm Red / Blue / Green Blinking LED Part No: WW05A7SRBGE4 Tel Fax Web Site : Unit 01, 19th Floor, Nanyang Plaza, No.57 Hung To Road, Kwun Tong, Kowloon, Hong Kong : 852-2512 9939 (10 line) : 852-2344 2398 : www.wahwang.com S.D.N. or D.N. No. : Customer Name : Sample Approval Signature : Date : Address WW05A7SRBGE4 Version 1.1 Page 1 of 3 WAH WANG HOLDINGS (HONG KONG) CO., LTD. Factory : WAH WANG OPTOELECTRONIC (SHENZHEN) CO LTD. Wah Wang Data Sheet For 5mm Red / Blue / Green Blinking LED Features • Standard T-1 Diameter Type Package. • General Purpose Leads • Reliable and Rugged Absolute Maximum Ratings at Ta=25℃ ℃ Parameter Power Dissipation MAX. Unit 100 mW Package Dimensions 5.0(.197) Peak Forward Current ( 1/10 Duty Cycle, 0.1ms Pulse Wide) 100 mA Continuous Forward Current 20 mA ≦ Derating Linear From 50°C Reverse Voltage 0.4 mA/°C 5 V Operating Temperature Range -40°C to +80°C Storage Temperature Range -40°C to +80°C Lead Soldering Temperature [ 4mm(.157”) From Body] 260°C for 3 Seconds 5.8(.228) 4.98(.196) 8.7(.343) 0.6 1.0(.04) (.024) 25.4(1.0) 0.5(.02) MIN. 0.5(.02) 2.54(.10) NOM. 1.5(.06)MIN Electrical Optical Characteristics at Ta=25°C Part Number WW05A7SRBGE4 Lens color Source Color Red Blue Green Reverse Voltage = 5V Water Clear Dominant Wavelength λd/ nm IF = 20mA (Note8) Min. Typ. Max. 620/ 630/ 465/ --475/ 515 525 Luminous Intensity Iv / mcd IF = 20mA (Note 5) Min. Typ. Max. 120/ 160/ 1000/ 1300/ --2200 2800 Reverse Current = 50µA Forward Voltage / V Typ. 4.5 Notes: 1. All dimensions are in millimeter. 2. Tolerance of measurement is ±0.25mm(.01”) unless others otherwise noted. 3. Protruded resin under flanges is 1.0mm(0.4”) max. 4. Lead spacing is measured where the leads emerge from the package. 5. Luminous intensity is measured with a light sensor and filter combination that approximates the CIE eye-response curve. Tolerance of measurement of luminous intensity is 15% 6. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. It use many parameters that correspond to the CIE 1931 2° Tolerance of measurement of angle is 10 degree 7. Caution in ESD: Static Electricity and surge damages the LED. lt is recommended to use a wrist band or anti-electrostatic glove when handling the LED.All devices, equipment and machinery must be properly grounded. 8. The dominant wavelength λd is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device. 9. Specifications are subject to change without notice. ± ± WW05A7SRBGE4 Version 1.1 Page 2 of 3 WAH WANG HOLDINGS (HONG KONG) CO., LTD. Factory : WAH WANG OPTOELECTRONIC (SHENZHEN) CO LTD. CAUTIONS (1) Lead Forming a. At least 3mm from the base of the epoxy bulb should be keep when forming leads. b. Do not use the base of the leadframe as a fulcrum during lead forming. Lead forming should be done before soldering. c. Because the stress to the base may damage the characteristics or it may break the LEDs, do not apply any bending stress to the base of the lead d. When mounting the LEDs onto a PCB, the holes on the circuit board should be exactly aligned with the leads of the LEDs. Stress at the leads should be avoid when the LEDs are mounted on the PCB, because it causes damage to the epoxy resin and this will degrade the LEDs. (2) Storage a. The LEDs should be stored at stored at 30 C or less and 70%RH or less after being shipped and the storage life limits are 3 months. b. If the LEDs are stored more then 3 months, they can be stored for a year in a sealed container with a nitrogen atmosphere and moisture absorbent material. c. Please avoid rapid transitions in ambient temperature, especially, in high humidity environments where condensation can occur. (3) Static Electricity a. Static electricity or surge voltage damages the LEDs. b. It is recommended that a wristband or an anti-electrostatic glove be used when handling the LEDs. c. All devices, equipment and machinery must be properly grounded. d. It is recommended that measures be taken against surge voltage to the equipment that mounts the LEDs. e. Damaged LEDs will show some unusual characteristics such as the leak current remarkably increases, the forward voltage becomes lower, or the LEDs do not light at the low current. Criteria: (VF>2.0V at IF=0.5mA) (4) Heat Generation a. Thermal design of the end product was most importance. Please consider the heat generation of the LED when making the system design. b. The thermal resistance of the circuit board and density of LED placement on the board, as well as other components was the important factor affecting the coefficient of temperature increase per input electric power. It must be avoid intense heat generation and operate within the maximum ratings given in the specification. c. The operating current should be decided after considering the ambient maximum temperature of LEDs. (5) Cleaning a. It is recommended that isopropyl alcohol be used as a solvent for cleaning the LEDs. When using other solvents, it should be confirmed beforehand whether the solvents will dissolve the resin or not. Freon solvents should not be used to clean the LEDs because of worldwide regulations. b. Do not clean the LEDs by the ultrasonic. When it is absolutely necessary, the influence of ultrasonic cleaning on the LEDs depends on factors such as ultrasonic power and the assembled condition. Before cleaning, a pre-test should be done to confirm whether any damage to the LEDs would occur. (6) Safety Guideline for Human Eyes a. In 1993, the International Electric Committee (IEC) issued a standard concerning laser product safety (IEC 825-1).Since then, this standard has been applied for diffused light sources (LEDs) as well as lasers.In 1998 IEC 60825-1 Edition 1.1 evaluated the magnitude of the light source. b. In 2001 IC 60825-1 Amendment 2 converted the laser class into 7 classes for end products. c. Components are excluded from this system. Products which contain visible LEDs are now classified as class 1. Products containing UV LEDs can be classified as class 2 in cases where viewing angles are narrow, optical manipulation intensifies the light, and/or the energy emitted is high. For these systems it is recommended to avoid long term exposure. It is also recommended to follow the ICE regulations regarding safety and labeling of products. (7) Soldering Condition for LED Lamps a Careful attention should be paid during soldering. b. Solder the LED no closer than 3mm from the base of the epoxy bulb. Soldering beyond the base of the tie bar is recommender. c. Recommender soldering conditions Dip Soldering Soldering Pre-Heat Temperature 120°C Max 350°C Max Pre-Heat Time Soldering 60 seconds Max 3 seconds Max Solder Bath Time No closer than 3 mm from the 260°C Max Temperature Position base of the epoxy bulb. Dipping Time 10 seconds Max Dipping Position No lower than 3 mm from the base of the epoxy bulb. d. Do not apply any stress to the lead particularly when heated. The LEDs must not be repositioned after soldering. After soldering the LEDs, the epoxy bulb should be protected from mechanical shock or vibration until the LEDs return to room temperature. Direct soldering onto a PC board should be avoided. Mechanical stress to the resin may be caused from warping of the PC board or from the clinching and cutting of the leadframes. When it is absolutely necessary, the LEDs may be mounted in this fashion but the User will assume responsibility for any problems. Direct soldering should only be done after testing has confirmed that no damage, such as wire bond failure or resin deterioration, will occur. Wah Wang LEDs should not be soldered directly to double sided PC boards because the heat will deteriorate the epoxy resin. When it is necessary to clamp the LEDs to prevent soldering failure, it is important to minimize the mechanical stress on the LEDs. Cut the LED leadframes at room temperature. Cutting the leadframes at high temperatures may cause failure of the LEDs. (8) Others a. Care must be taken to ensure that the reverse voltage will not exceed the absolute maximum rating when using the LEDs with matrix drive. Keeping the Normal Forward to 20 mA. b. The LEDs described in this brochure are intended to be used for ordinary electronic equipment (such as office equipment, communications equipment, measurement instruments and household appliances). Consult Wah Wang’s sales staff in advance for information on the applications in which exceptional quality and reliability are required, particularly when the failure or malfunction of the LEDs may directly jeopardize life or health (such as for airplanes, aerospace, submersible repeaters, nuclear reactor control systems, automobiles, traffic control equipment, life support systems and safety devices). IF Rx VF c. d. e. IF = V - VF Rx V User shall not reverse engineer by disassembling or analysis of the LEDs without having prior written consent from Wah Wang. When defective LEDs are found, the User shall inform Wah Wang directly before disassembling or analysis. The formal specifications must be exchanged and signed by both parties before large volume purchase begins. The appearance and specifications of the product may be modified for improvement without notice. WW05A7SRBGE4 Version 1.1 Page 3 of 3 Optoelectronics Lighting Imaging Telecom Sensors Detectors and Sensors Photoconductive Cells and Analog Optoisolators (Vactrols®) Specialty Lighting Digital Imaging Telecom Sensors . Photoconductive Cells 1 What is a Photoconductive Cell? Semiconductor light detectors can be divided into two major categories: junction and bulk effect devices. Junction devices, when operated in the photoconductive mode, utilize the reverse characteristic of a PN junction. Under reverse bias, the PN junction acts as a light controlled current source. Output is proportional to incident illumination and is relatively independent of implied voltage as shown in Figure 1. Silicon photodiodes are examples of this type detector. Figure 2 Bulk Effect Photoconductor (Photocell) In contrast, bulk effect photoconductors have no junction. As shown in Figure 2, the bulk resistivity decreases with increasing illumination, allowing more photocurrent to flow. This resistive characteristic gives bulk effect photoconductors a unique quality: signal current from the detector can be varied over a wide range by adjusting the applied voltage. To clearly make this distinction, PerkinElmer Optoelectronics refers to it’s bulk effect photoconductors as photoconductive cells or simply photocells. Photocells are thin film devices made by depositing a layer of a photoconductive material on a ceramic substrate. Metal contacts are evaporated over the surface of the photoconductor and external electrical connection is made to these contacts. These thin films of photoconductive material have a high sheet resistance. Therefore, the space between the two contacts is made narrow and interdigitated for low cell resistance at moderate light levels. This construction is shown in Figure 3. Figure 1 Junction Photoconductor (Photodiode) Figure 3 Typical Construction of a Plastic Coated Photocell 2 Photoconductive Cell Typical Applications Why Use Photocells? Photocells can provide a very economic and technically superior solution for many applications where the presence or absence of light is sensed (digital operation) or where the intensity of light needs to be measured (analog operation). Their general characteristics and features can be summarized as follows: • Lowest cost available and near-IR photo detector • Available in low cost plastic encapsulated packages as well as hermetic packages (TO-46, TO-5, TO-8) • Responsive to both very low light levels (moonlight) and to very high light levels (direct sunlight) • Wide dynamic range: resistance changes of several orders of magnitude between "light" and "no light" • Low noise distortion • Maximum operating voltages of 50 to 400 volts are suitable for operation on 120/240 VAC • Available in center tap dual cell configurations as well as specially selected resistance ranges for special applications • Easy to use in DC or AC circuits - they are a light variable resistor and hence symmetrical with respect to AC waveforms • Usable with almost any visible or near infrared light source such as LEDS; neon; fluorescent, incandescent bulbs, lasers; flame sources; sunlight; etc • Available in a wide range of resistance values Applications Photoconductive cells are used in many different types of circuits and applications. Analog Applications • Camera Exposure Control • Auto Slide Focus - dual cell • Photocopy Machines - density of toner • Colorimetric Test Equipment • Densitometer • Electronic Scales - dual cell • Automatic Gain Control - modulated light source • Automated Rear View Mirror Digital Applications • Automatic Headlight Dimmer • Night Light Control • Oil Burner Flame Out • Street Light Control • Absence / Presence (beam breaker) • Position Sensor 3 Photoconductive Cell Typical Application Circuits Ambient Light Measurement Camera Exposure Meter (VT900) Brightness Control (VT900) DC Relay Rear View Mirror Control (VT200) Head Light Dimmer (VT300 or VT800) AC Relay Night Light Control (VT800 or VT900) Street Light Control (VT400) Flame Detector (VT400 or 500) Object Sensing / Measurement Beam Breaking Applications (VT800) Security Systems (VT800 or VT900) Colorimetric Test Equipment (VT200 or VT300) Densitometer (VT200 or VT300) Bridge Circuits Auto Focus (VT300CT or VT800CT) Electronic Scales (VT300CT or VT800CT) Photoelectric Servo (VT300CT or VT800CT) 4 Photoconductive Cell VT900 Series PACKAGE DIMENSIONS inch (mm) 5 2 ABSOLUTE MAXIMUM RATINGS Parameter Continuous Power Dissipation Derate Above 25°C Temperature Range Operating and Storage Symbol Rating Units PD ∆PD / ∆T 80 1.6 mW mW/°C TA –40 to +75 °C ELECTRO-OPTICAL CHARACTERICTICS @ 25°C (16 hrs. light adapt, min.) Resistance (Ohms) 3 6 10 lux 2850 K 4 Sensitivity (γ, typ.) 2 fc 2850 K Response Time @ 1 fc (ms, typ.) Dark Part Number Material Type LOG (R10/R100) ------------------------------------LOG (100/10) Min. Typ. Max. Typ. Min. sec. VT9ØN1 6k 12 k 18 k 6k 200 k 5 Ø 0.80 VT9ØN2 12 k 24 k 36 k 12 k 500 k 5 Ø VT9ØN3 25 k 50 k 75 k 25 k 1M 5 Ø VT9ØN4 50 k 100 k 150 k 50 k 2M 5 VT93N1 12 k 24 k 36 k 12 k 300 k 5 VT93N2 24 k 48 k 72 k 24 k 500 k VT93N3 50 k 100 k 150 k 50 k 500 k VT93N4 100 k 200 k 300 k 100 k Maximum Voltage (V, pk) Rise (1-1/e) Fall (1/e) 100 78 8 0.80 100 78 8 0.85 100 78 8 Ø 0.90 100 78 8 3 0.90 100 35 5 5 3 0.90 100 35 5 5 3 0.90 100 35 5 500 k 5 3 0.90 100 35 5 VT935G Group A 10 k 18.5 k 27 k 9.3 k 1M 5 3 0.90 100 35 5 1 Group B 20 k 29 k 38 k 15 k 1M 5 3 0.90 100 35 5 Group C 31 k 40.5 k 50 k 20 k 1M 5 3 0.90 100 35 5 See page 13 for notes. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 14 BC546 ... BC549 BC546 ... BC549 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-05-31 Power dissipation – Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 500 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC546 BC547 BC548/549 Collector-Emitter-voltage E-B short VCES 85 V 50 V 30 V Collector-Emitter-voltage B open VCEO 65 V 45 V 30 V Collector-Base-voltage E open VCBO 80 V 50 V 30 V Emitter-Base-voltage C open VEB0 5V Power dissipation – Verlustleistung Ptot 500 mW 1) Collector current – Kollektorstrom (dc) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA - IEM 200 mA Tj TS -55...+150°C -55…+150°C Peak Emitter current – Emitter-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Group A Group B Group C DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 5 V, IC = 10 µA hFE typ. 90 typ. 150 typ. 270 VCE = 5 V, IC = 2 mA hFE 110 ... 220 200 ... 450 420 ... 800 VCE = 5 V, IC = 100 mA hFE typ. 120 typ. 200 typ. 400 Small signal current gain Kleinsignal-Stromverstärkung hfe typ. 220 typ. 330 typ. 600 Input impedance – Eingangs-Impedanz hie 1.6 ... 4.5 kΩ 3.2 ...8.5 kΩ 6 ... 15 kΩ Output admittance – Ausgangs-Leitwert hoe 18 < 30 µS 30 < 60 µS 60 < 110 µS Reverser voltage transfer ratio Spannungsrückwirkung hre typ. 1.5*10-4 typ. 2*10-4 typ. 3*10-4 h-Parameters at/bei VCE = 5 V, IC = 2 mA, f = 1 kHz 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 BC546 ... BC549 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom VCE = 80 V, (B-E short) VCE = 50 V, (B-E short) VCE = 30 V, (B-E short) BC546 BC547 BC548 / BC549 ICES ICES ICES – – – 0.2 nA 0.2 nA 0.2 nA 15 nA 15 nA 15 nA VCE = 80 V, Tj = 125°C, (B-E short) VCE = 50 V, Tj = 125°C, (B-E short) VCE = 30 V, Tj = 125°C, (B-E short) BC546 BC547 BC548 / BC549 ICES ICES ICES – – – – – – 4 µA 4 µA 4 µA VCEsat VCEsat – – 80 mV 200 mV 200 mV 600 mV VBEsat VBEsat – – 700 mV 900 mV – – VBE VBE 580 mV – 660 mV – 700 mV 720 mV fT – 300 MHz – CCBO – 3.5 pF 6 pF CEB0 – 9 pF – F F – – 2 dB 1.2 dB 10 dB 4 dB Collector-Emitter saturation voltage – Kollektor-EmitterSättigungsspg. 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz BC546 / BC547 BC548 / BC549 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ 2 1 2 RthA < 200 K/W 1) BC556 ... BC559 BC546A BC547A BC548A BC546B BC547B BC548B BC549B BC547C BC548C BC549C Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG BC546 ... BC549 BC546 ... BC549 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-05-31 Power dissipation – Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 500 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC546 BC547 BC548/549 Collector-Emitter-voltage E-B short VCES 85 V 50 V 30 V Collector-Emitter-voltage B open VCEO 65 V 45 V 30 V Collector-Base-voltage E open VCBO 80 V 50 V 30 V Emitter-Base-voltage C open VEB0 5V Power dissipation – Verlustleistung Ptot 500 mW 1) Collector current – Kollektorstrom (dc) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA - IEM 200 mA Tj TS -55...+150°C -55…+150°C Peak Emitter current – Emitter-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Group A Group B Group C DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 5 V, IC = 10 µA hFE typ. 90 typ. 150 typ. 270 VCE = 5 V, IC = 2 mA hFE 110 ... 220 200 ... 450 420 ... 800 VCE = 5 V, IC = 100 mA hFE typ. 120 typ. 200 typ. 400 Small signal current gain Kleinsignal-Stromverstärkung hfe typ. 220 typ. 330 typ. 600 Input impedance – Eingangs-Impedanz hie 1.6 ... 4.5 kΩ 3.2 ...8.5 kΩ 6 ... 15 kΩ Output admittance – Ausgangs-Leitwert hoe 18 < 30 µS 30 < 60 µS 60 < 110 µS Reverser voltage transfer ratio Spannungsrückwirkung hre typ. 1.5*10-4 typ. 2*10-4 typ. 3*10-4 h-Parameters at/bei VCE = 5 V, IC = 2 mA, f = 1 kHz 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 BC546 ... BC549 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom VCE = 80 V, (B-E short) VCE = 50 V, (B-E short) VCE = 30 V, (B-E short) BC546 BC547 BC548 / BC549 ICES ICES ICES – – – 0.2 nA 0.2 nA 0.2 nA 15 nA 15 nA 15 nA VCE = 80 V, Tj = 125°C, (B-E short) VCE = 50 V, Tj = 125°C, (B-E short) VCE = 30 V, Tj = 125°C, (B-E short) BC546 BC547 BC548 / BC549 ICES ICES ICES – – – – – – 4 µA 4 µA 4 µA VCEsat VCEsat – – 80 mV 200 mV 200 mV 600 mV VBEsat VBEsat – – 700 mV 900 mV – – VBE VBE 580 mV – 660 mV – 700 mV 720 mV fT – 300 MHz – CCBO – 3.5 pF 6 pF CEB0 – 9 pF – F F – – 2 dB 1.2 dB 10 dB 4 dB Collector-Emitter saturation voltage – Kollektor-EmitterSättigungsspg. 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz BC546 / BC547 BC548 / BC549 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ 2 1 2 RthA < 200 K/W 1) BC556 ... BC559 BC546A BC547A BC548A BC546B BC547B BC548B BC549B BC547C BC548C BC549C Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG USB USB, Ausführung A, Side-Entry, Ultraflach USB, version A, Side-Entry, ultra flat DIP SMT DIP Bestellcode : Ordercode : A - USB - A - x 120 Ausführung LP -DIP LP/SMT -SMT Insulator Nylon PA9T Kontakte Phosphorbronze, t=0.25mm Contacts Phosphorbronze, t=0.25mm Gehäuse Messing t=0.3mm Oberfläche: Vernickelt Shell Brass t=0.3 Finish: Nickel Plated Durchschlagspannung 500V AC ( 1min ) Withstanding voltage 500V AC ( 1min ) Isolationswiderstand 1000MΩ min. Insulation resistance 1000MΩ min. Nennspannung und Strom 1.5A bei 250V AC minimum Rated voltage and current 1.5A at 250V AC minimum SMT Bitte „x“ durch die unten geeignete Optionen ersetzen Please replace „x“ with appropriate options listed below 1. 1. Isolierkörper Nylon PA9T Version LP -DIP LP/SMT -SMT