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WAH WANG HOLDINGS (HONG KONG) CO., LTD.
Factory
: WAH WANG OPTOELECTRONIC (SHENZHEN) CO LTD.
Wah Wang Data Sheet
For 5mm Red / Blue / Green Blinking LED
Part No: WW05A7SRBGE4
Tel
Fax
Web Site
: Unit 01, 19th Floor, Nanyang Plaza,
No.57 Hung To Road, Kwun Tong,
Kowloon, Hong Kong
: 852-2512 9939 (10 line)
: 852-2344 2398
: www.wahwang.com
S.D.N. or D.N. No.
:
Customer Name
:
Sample Approval Signature
:
Date
:
Address
WW05A7SRBGE4
Version 1.1
Page 1 of 3
WAH WANG HOLDINGS (HONG KONG) CO., LTD.
Factory
: WAH WANG OPTOELECTRONIC (SHENZHEN) CO LTD.
Wah Wang Data Sheet For 5mm Red / Blue / Green Blinking LED
Features
•
Standard T-1 Diameter Type Package.
•
General Purpose Leads
•
Reliable and Rugged
Absolute Maximum Ratings at Ta=25℃
℃
Parameter
Power Dissipation
MAX.
Unit
100
mW
Package Dimensions
5.0(.197)
Peak Forward Current
( 1/10 Duty Cycle, 0.1ms Pulse Wide)
100
mA
Continuous Forward Current
20
mA
≦
Derating Linear From 50°C
Reverse Voltage
0.4
mA/°C
5
V
Operating Temperature Range
-40°C to +80°C
Storage Temperature Range
-40°C to +80°C
Lead Soldering Temperature
[ 4mm(.157”) From Body]
260°C for 3 Seconds
5.8(.228)
4.98(.196)
8.7(.343)
0.6
1.0(.04)
(.024)
25.4(1.0)
0.5(.02)
MIN.
0.5(.02)
2.54(.10)
NOM.
1.5(.06)MIN
Electrical Optical Characteristics at Ta=25°C
Part Number
WW05A7SRBGE4
Lens color
Source
Color
Red
Blue
Green
Reverse Voltage = 5V
Water Clear
Dominant Wavelength
λd/ nm
IF = 20mA (Note8)
Min.
Typ.
Max.
620/
630/
465/
--475/
515
525
Luminous Intensity
Iv / mcd
IF = 20mA (Note 5)
Min.
Typ.
Max.
120/
160/
1000/
1300/
--2200
2800
Reverse Current = 50µA
Forward
Voltage /
V
Typ.
4.5
Notes:
1. All dimensions are in millimeter.
2. Tolerance of measurement is ±0.25mm(.01”) unless others otherwise noted.
3. Protruded resin under flanges is 1.0mm(0.4”) max.
4. Lead spacing is measured where the leads emerge from the package.
5. Luminous intensity is measured with a light sensor and filter combination that approximates the CIE eye-response curve.
Tolerance of measurement of luminous intensity is 15%
6. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
It use many parameters that correspond to the CIE 1931 2°
Tolerance of measurement of angle is 10 degree
7. Caution in ESD: Static Electricity and surge damages the LED. lt is recommended to use a wrist band or anti-electrostatic
glove when handling the LED.All devices, equipment and machinery must be properly grounded.
8. The dominant wavelength λd is derived from the CIE chromaticity diagram and represents the single wavelength which
defines the color of the device.
9. Specifications are subject to change without notice.
±
±
WW05A7SRBGE4
Version 1.1
Page 2 of 3
WAH WANG HOLDINGS (HONG KONG) CO., LTD.
Factory
: WAH WANG OPTOELECTRONIC (SHENZHEN) CO LTD.
CAUTIONS
(1) Lead Forming
a.
At least 3mm from the base of the epoxy bulb should be keep when forming leads.
b.
Do not use the base of the leadframe as a fulcrum during lead forming.
Lead forming should be done before soldering.
c.
Because the stress to the base may damage the characteristics or it may break the LEDs, do not apply any bending stress to the base of the lead
d.
When mounting the LEDs onto a PCB, the holes on the circuit board should be exactly aligned with the leads of the LEDs. Stress at the leads should be avoid when the LEDs are mounted on the PCB,
because it causes damage to the epoxy resin and this will degrade the LEDs.
(2) Storage
a.
The LEDs should be stored at stored at 30 C or less and 70%RH or less after being shipped and the storage life limits are 3 months.
b.
If the LEDs are stored more then 3 months, they can be stored for a year in a sealed container with a nitrogen atmosphere and moisture absorbent material.
c.
Please avoid rapid transitions in ambient temperature, especially, in high humidity environments where condensation can occur.
(3) Static Electricity
a.
Static electricity or surge voltage damages the LEDs.
b.
It is recommended that a wristband or an anti-electrostatic glove be used when handling the LEDs.
c.
All devices, equipment and machinery must be properly grounded.
d.
It is recommended that measures be taken against surge voltage to the equipment that mounts the LEDs.
e.
Damaged LEDs will show some unusual characteristics such as the leak current remarkably increases, the forward voltage becomes lower, or the LEDs do not light at the low current.
Criteria: (VF>2.0V at IF=0.5mA)
(4) Heat Generation
a.
Thermal design of the end product was most importance. Please consider the heat generation of the LED when making the system design.
b.
The thermal resistance of the circuit board and density of LED placement on the board, as well as other components was the important factor affecting the coefficient of temperature increase per input
electric power. It must be avoid intense heat generation and operate within the maximum ratings given in the specification.
c.
The operating current should be decided after considering the ambient maximum temperature of LEDs.
(5) Cleaning
a.
It is recommended that isopropyl alcohol be used as a solvent for cleaning the LEDs. When using other solvents, it should be confirmed beforehand whether the solvents will dissolve the resin or not.
Freon solvents should not be used to clean the LEDs because of worldwide regulations.
b.
Do not clean the LEDs by the ultrasonic. When it is absolutely necessary, the influence of ultrasonic cleaning on the LEDs depends on factors such as ultrasonic power and the assembled condition.
Before cleaning, a pre-test should be done to confirm whether any damage to the LEDs would occur.
(6) Safety Guideline for Human Eyes
a.
In 1993, the International Electric Committee (IEC) issued a standard concerning laser product safety (IEC 825-1).Since then, this standard has been applied for diffused light sources (LEDs) as well as
lasers.In 1998 IEC 60825-1 Edition 1.1 evaluated the magnitude of the light source.
b.
In 2001 IC 60825-1 Amendment 2 converted the laser class into 7 classes for end products.
c.
Components are excluded from this system. Products which contain visible LEDs are now classified as class 1. Products containing UV LEDs can be classified as class 2 in cases where viewing angles
are narrow, optical manipulation intensifies the light, and/or the energy emitted is high. For these systems it is recommended to avoid long term exposure. It is also recommended to follow the ICE
regulations regarding safety and labeling of products.
(7) Soldering Condition for LED Lamps
a Careful attention should be paid during soldering.
b. Solder the LED no closer than 3mm from the base of the epoxy bulb. Soldering beyond the base of the tie bar is recommender.
c. Recommender soldering conditions
Dip Soldering
Soldering
Pre-Heat
Temperature
120°C Max
350°C Max
Pre-Heat Time
Soldering
60 seconds Max
3 seconds Max
Solder Bath
Time
No closer than 3 mm from the
260°C Max
Temperature
Position
base of the epoxy bulb.
Dipping Time
10 seconds Max
Dipping Position
No lower than 3 mm from the base of
the epoxy bulb.
d. Do not apply any stress to the lead particularly when heated.
The LEDs must not be repositioned after soldering.
After soldering the LEDs, the epoxy bulb should be protected from mechanical shock or vibration until the LEDs return to room temperature.
Direct soldering onto a PC board should be avoided. Mechanical stress to the resin may be caused from warping of the PC board or from the clinching and cutting of the leadframes. When it is absolutely necessary, the LEDs may
be mounted in this fashion but the User will assume responsibility for any problems. Direct soldering should only be done after testing has confirmed that no damage, such as wire bond failure or resin deterioration, will occur.
Wah Wang LEDs should not be soldered directly to double sided PC boards because the heat will deteriorate the epoxy resin.
When it is necessary to clamp the LEDs to prevent soldering failure, it is important to minimize the mechanical stress on the LEDs.
Cut the LED leadframes at room temperature. Cutting the leadframes at high temperatures may cause failure of the LEDs.
(8)
Others
a.
Care must be taken to ensure that the reverse voltage will not exceed the absolute maximum rating when using the LEDs with matrix drive. Keeping the Normal Forward to 20 mA.
b.
The LEDs described in this brochure are intended to be used for ordinary electronic equipment (such as office equipment, communications equipment, measurement instruments and household
appliances). Consult Wah Wang’s sales staff in advance for information on the applications in which exceptional quality and reliability are required, particularly when the failure or malfunction of the
LEDs may directly jeopardize life or health (such as for airplanes, aerospace, submersible repeaters, nuclear reactor control systems, automobiles, traffic control equipment, life support systems and
safety devices).
IF
Rx
VF
c.
d.
e.
IF = V - VF
Rx
V
User shall not reverse engineer by disassembling or analysis of the LEDs without having prior written consent from Wah Wang. When defective LEDs are found, the User shall inform Wah Wang directly
before disassembling or analysis.
The formal specifications must be exchanged and signed by both parties before large volume purchase begins.
The appearance and specifications of the product may be modified for improvement without notice.
WW05A7SRBGE4
Version 1.1
Page 3 of 3
Optoelectronics
Lighting
Imaging
Telecom
Sensors
Detectors and Sensors
Photoconductive Cells and
Analog Optoisolators (Vactrols®)
Specialty Lighting
Digital Imaging
Telecom
Sensors
.
Photoconductive Cells
1
What is a Photoconductive Cell?
Semiconductor light detectors can be divided into two major
categories: junction and bulk effect devices. Junction devices, when
operated in the photoconductive mode, utilize the reverse
characteristic of a PN junction. Under reverse bias, the PN junction
acts as a light controlled current source. Output is proportional to
incident illumination and is relatively independent of implied voltage as
shown in Figure 1. Silicon photodiodes are examples of this type
detector.
Figure 2
Bulk Effect Photoconductor (Photocell)
In contrast, bulk effect photoconductors have no junction. As shown in
Figure 2, the bulk resistivity decreases with increasing illumination,
allowing more photocurrent to flow. This resistive characteristic gives
bulk effect photoconductors a unique quality: signal current from the
detector can be varied over a wide range by adjusting the applied
voltage. To clearly make this distinction, PerkinElmer Optoelectronics
refers to it’s bulk effect photoconductors as photoconductive cells or
simply photocells.
Photocells are thin film devices made by depositing a layer of a
photoconductive material on a ceramic substrate. Metal contacts are
evaporated over the surface of the photoconductor and external
electrical connection is made to these contacts. These thin films of
photoconductive material have a high sheet resistance. Therefore, the
space between the two contacts is made narrow and interdigitated for
low cell resistance at moderate light levels. This construction is shown
in Figure 3.
Figure 1
Junction Photoconductor (Photodiode)
Figure 3
Typical Construction of a Plastic Coated Photocell
2
Photoconductive Cell Typical Applications
Why Use Photocells?
Photocells can provide a very economic and technically superior solution for many applications where the presence or absence of light is sensed
(digital operation) or where the intensity of light needs to be measured (analog operation). Their general characteristics and features can be
summarized as follows:
•
Lowest cost available and near-IR photo detector
•
Available in low cost plastic encapsulated packages as well as hermetic packages (TO-46, TO-5, TO-8)
•
Responsive to both very low light levels (moonlight) and to very high light levels (direct sunlight)
•
Wide dynamic range: resistance changes of several orders of magnitude between "light" and "no light"
•
Low noise distortion
•
Maximum operating voltages of 50 to 400 volts are suitable for operation on 120/240 VAC
•
Available in center tap dual cell configurations as well as specially selected resistance ranges for special applications
•
Easy to use in DC or AC circuits - they are a light variable resistor and hence symmetrical with respect to AC waveforms
•
Usable with almost any visible or near infrared light source such as LEDS; neon; fluorescent, incandescent bulbs, lasers; flame sources;
sunlight; etc
•
Available in a wide range of resistance values
Applications
Photoconductive cells are used in many different types of circuits and applications.
Analog Applications
•
Camera Exposure Control
•
Auto Slide Focus - dual cell
•
Photocopy Machines - density of toner
•
Colorimetric Test Equipment
•
Densitometer
•
Electronic Scales - dual cell
•
Automatic Gain Control - modulated light source
•
Automated Rear View Mirror
Digital Applications
•
Automatic Headlight Dimmer
•
Night Light Control
•
Oil Burner Flame Out
•
Street Light Control
•
Absence / Presence (beam breaker)
•
Position Sensor
3
Photoconductive Cell Typical Application Circuits
Ambient Light Measurement
Camera Exposure Meter (VT900)
Brightness Control (VT900)
DC Relay
Rear View Mirror Control (VT200)
Head Light Dimmer (VT300 or VT800)
AC Relay
Night Light Control (VT800 or VT900)
Street Light Control (VT400)
Flame Detector (VT400 or 500)
Object Sensing / Measurement
Beam Breaking Applications (VT800)
Security Systems (VT800 or VT900)
Colorimetric Test Equipment (VT200 or VT300)
Densitometer (VT200 or VT300)
Bridge Circuits
Auto Focus (VT300CT or VT800CT)
Electronic Scales (VT300CT or VT800CT)
Photoelectric Servo (VT300CT or VT800CT)
4
Photoconductive Cell
VT900 Series
PACKAGE DIMENSIONS inch (mm)
5
2
ABSOLUTE MAXIMUM RATINGS
Parameter
Continuous Power Dissipation
Derate Above 25°C
Temperature Range
Operating and Storage
Symbol
Rating
Units
PD
∆PD / ∆T
80
1.6
mW
mW/°C
TA
–40 to +75
°C
ELECTRO-OPTICAL CHARACTERICTICS @ 25°C (16 hrs. light adapt, min.)
Resistance (Ohms) 3 6
10 lux
2850 K
4
Sensitivity
(γ, typ.)
2 fc
2850 K
Response Time @ 1 fc
(ms, typ.)
Dark
Part
Number
Material
Type
LOG (R10/R100)
------------------------------------LOG (100/10)
Min.
Typ.
Max.
Typ.
Min.
sec.
VT9ØN1
6k
12 k
18 k
6k
200 k
5
Ø
0.80
VT9ØN2
12 k
24 k
36 k
12 k
500 k
5
Ø
VT9ØN3
25 k
50 k
75 k
25 k
1M
5
Ø
VT9ØN4
50 k
100 k
150 k
50 k
2M
5
VT93N1
12 k
24 k
36 k
12 k
300 k
5
VT93N2
24 k
48 k
72 k
24 k
500 k
VT93N3
50 k
100 k
150 k
50 k
500 k
VT93N4
100 k
200 k
300 k
100 k
Maximum
Voltage
(V, pk)
Rise (1-1/e)
Fall (1/e)
100
78
8
0.80
100
78
8
0.85
100
78
8
Ø
0.90
100
78
8
3
0.90
100
35
5
5
3
0.90
100
35
5
5
3
0.90
100
35
5
500 k
5
3
0.90
100
35
5
VT935G
Group A
10 k
18.5 k
27 k
9.3 k
1M
5
3
0.90
100
35
5
1 Group B
20 k
29 k
38 k
15 k
1M
5
3
0.90
100
35
5
Group C
31 k
40.5 k
50 k
20 k
1M
5
3
0.90
100
35
5
See page 13 for notes.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
14
BC546 ... BC549
BC546 ... BC549
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
NPN
NPN
Version 2006-05-31
Power dissipation – Verlustleistung
18
9
16
CBE
2 x 2.54
Dimensions - Maße [mm]
500 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC546
BC547
BC548/549
Collector-Emitter-voltage
E-B short
VCES
85 V
50 V
30 V
Collector-Emitter-voltage
B open
VCEO
65 V
45 V
30 V
Collector-Base-voltage
E open
VCBO
80 V
50 V
30 V
Emitter-Base-voltage
C open
VEB0
5V
Power dissipation – Verlustleistung
Ptot
500 mW 1)
Collector current – Kollektorstrom (dc)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Peak Base current – Basis-Spitzenstrom
IBM
200 mA
- IEM
200 mA
Tj
TS
-55...+150°C
-55…+150°C
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 10 µA
hFE
typ. 90
typ. 150
typ. 270
VCE = 5 V, IC = 2 mA
hFE
110 ... 220
200 ... 450
420 ... 800
VCE = 5 V, IC = 100 mA
hFE
typ. 120
typ. 200
typ. 400
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangs-Impedanz
hie
1.6 ... 4.5 kΩ
3.2 ...8.5 kΩ
6 ... 15 kΩ
Output admittance – Ausgangs-Leitwert
hoe
18 < 30 µS
30 < 60 µS
60 < 110 µS
Reverser voltage transfer ratio
Spannungsrückwirkung
hre
typ. 1.5*10-4
typ. 2*10-4
typ. 3*10-4
h-Parameters at/bei VCE = 5 V, IC = 2 mA, f = 1 kHz
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC546 ... BC549
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
VCE = 80 V, (B-E short)
VCE = 50 V, (B-E short)
VCE = 30 V, (B-E short)
BC546
BC547
BC548 / BC549
ICES
ICES
ICES
–
–
–
0.2 nA
0.2 nA
0.2 nA
15 nA
15 nA
15 nA
VCE = 80 V, Tj = 125°C, (B-E short)
VCE = 50 V, Tj = 125°C, (B-E short)
VCE = 30 V, Tj = 125°C, (B-E short)
BC546
BC547
BC548 / BC549
ICES
ICES
ICES
–
–
–
–
–
–
4 µA
4 µA
4 µA
VCEsat
VCEsat
–
–
80 mV
200 mV
200 mV
600 mV
VBEsat
VBEsat
–
–
700 mV
900 mV
–
–
VBE
VBE
580 mV
–
660 mV
–
700 mV
720 mV
fT
–
300 MHz
–
CCBO
–
3.5 pF
6 pF
CEB0
–
9 pF
–
F
F
–
–
2 dB
1.2 dB
10 dB
4 dB
Collector-Emitter saturation voltage – Kollektor-EmitterSättigungsspg. 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC546 / BC547
BC548 / BC549
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
2
1
2
RthA
< 200 K/W 1)
BC556 ... BC559
BC546A
BC547A
BC548A
BC546B
BC547B
BC548B
BC549B
BC547C
BC548C
BC549C
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG
BC546 ... BC549
BC546 ... BC549
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
NPN
NPN
Version 2006-05-31
Power dissipation – Verlustleistung
18
9
16
CBE
2 x 2.54
Dimensions - Maße [mm]
500 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC546
BC547
BC548/549
Collector-Emitter-voltage
E-B short
VCES
85 V
50 V
30 V
Collector-Emitter-voltage
B open
VCEO
65 V
45 V
30 V
Collector-Base-voltage
E open
VCBO
80 V
50 V
30 V
Emitter-Base-voltage
C open
VEB0
5V
Power dissipation – Verlustleistung
Ptot
500 mW 1)
Collector current – Kollektorstrom (dc)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Peak Base current – Basis-Spitzenstrom
IBM
200 mA
- IEM
200 mA
Tj
TS
-55...+150°C
-55…+150°C
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 10 µA
hFE
typ. 90
typ. 150
typ. 270
VCE = 5 V, IC = 2 mA
hFE
110 ... 220
200 ... 450
420 ... 800
VCE = 5 V, IC = 100 mA
hFE
typ. 120
typ. 200
typ. 400
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangs-Impedanz
hie
1.6 ... 4.5 kΩ
3.2 ...8.5 kΩ
6 ... 15 kΩ
Output admittance – Ausgangs-Leitwert
hoe
18 < 30 µS
30 < 60 µS
60 < 110 µS
Reverser voltage transfer ratio
Spannungsrückwirkung
hre
typ. 1.5*10-4
typ. 2*10-4
typ. 3*10-4
h-Parameters at/bei VCE = 5 V, IC = 2 mA, f = 1 kHz
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC546 ... BC549
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
VCE = 80 V, (B-E short)
VCE = 50 V, (B-E short)
VCE = 30 V, (B-E short)
BC546
BC547
BC548 / BC549
ICES
ICES
ICES
–
–
–
0.2 nA
0.2 nA
0.2 nA
15 nA
15 nA
15 nA
VCE = 80 V, Tj = 125°C, (B-E short)
VCE = 50 V, Tj = 125°C, (B-E short)
VCE = 30 V, Tj = 125°C, (B-E short)
BC546
BC547
BC548 / BC549
ICES
ICES
ICES
–
–
–
–
–
–
4 µA
4 µA
4 µA
VCEsat
VCEsat
–
–
80 mV
200 mV
200 mV
600 mV
VBEsat
VBEsat
–
–
700 mV
900 mV
–
–
VBE
VBE
580 mV
–
660 mV
–
700 mV
720 mV
fT
–
300 MHz
–
CCBO
–
3.5 pF
6 pF
CEB0
–
9 pF
–
F
F
–
–
2 dB
1.2 dB
10 dB
4 dB
Collector-Emitter saturation voltage – Kollektor-EmitterSättigungsspg. 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC546 / BC547
BC548 / BC549
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
2
1
2
RthA
< 200 K/W 1)
BC556 ... BC559
BC546A
BC547A
BC548A
BC546B
BC547B
BC548B
BC549B
BC547C
BC548C
BC549C
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG
USB
USB, Ausführung A, Side-Entry, Ultraflach
USB, version A, Side-Entry, ultra flat
DIP
SMT
DIP
Bestellcode :
Ordercode :
A - USB - A - x
120
Ausführung
LP
-DIP
LP/SMT -SMT
Insulator
Nylon PA9T
Kontakte
Phosphorbronze, t=0.25mm
Contacts
Phosphorbronze, t=0.25mm
Gehäuse
Messing t=0.3mm
Oberfläche: Vernickelt
Shell
Brass t=0.3
Finish: Nickel Plated
Durchschlagspannung
500V AC ( 1min )
Withstanding voltage
500V AC ( 1min )
Isolationswiderstand
1000MΩ min.
Insulation resistance
1000MΩ min.
Nennspannung und Strom
1.5A bei 250V AC minimum
Rated voltage and current
1.5A at 250V AC minimum
SMT
Bitte „x“ durch die unten geeignete Optionen ersetzen
Please replace „x“ with appropriate options listed below
1.
1.
Isolierkörper
Nylon PA9T
Version
LP
-DIP
LP/SMT -SMT