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Symbols and Terminology - Alphabetically Vishay Semiconductors Symbols and Terminology - Alphabetically A A A a AOQ B bit/s C C C C °C CCE CEB CCB CCEO CD CI, CIN CIO Cio |CMH| |CML| CO Cj Ck CMTI CMR CTI CTR CTR (a.c.) CTR (d.c.) d dV/dtcr Anode, anode terminal Ampere; SI unit of electrical current Radiant sensitive area; that area which is radiant-sensitive for a specified range Distance between the emitter (source) and the detector Average Outgoing Quality “Qualification and Monitoring” (see page XX) Base, base terminal Data rate or signaling rate; 1000 bit/s = 1 kbit/s, 106 bit/s = 1 Mbit/s Capacitance; unit: F (farad) = C/V Coulomb; C = s x A Cathode, cathode terminal Collector, collector terminal Celsius; unit of the centigrade scale; can also be used (besides K) to express temperature changes Symbols: T, DT; T (°C) = T (K) - 273 Collector emitter capacitance at a specified frequency Emitter base capacitance Collector base capacitance Collector emitter capacitance. Capacitance between the collector and the emitter with open base. Measurement is made by applying reverse voltage between collector and emitter terminals Diode capacitance; total capacitance effective between the diode terminals due to case, junction and parasitic capacitances Input capacitance Input-output capacitance Input-output capacitance at a specified frequency Absolute value of CMTI at logic high level output Absolute value of CMTI at logic low level output Output capacitance Junction capacitance; capacitance due to a PN-junction of a diode. It decreases with increasing reverse voltage Coupling capacitance; capacitance between the emitter and the detector of an opto isolator Common mode transient immunity Common mode rejection Comparative tracking index Current transfer ratio; ratio between output and input current Current transfer ratio at a specified frequency (also hF) Current transfer ratio at a specified frequency (also hF) Distance Critical rate of rise of off-state voltage (IF = 0) Highest value of “rate of rise of off-state voltage” which will cause no switching from the off-state to the on-state Document Number: 80058 Rev. 1.4, 11-Oct-07 dV/dtcrq E F f fctr Critical rate of rise of commutating voltage (IF x IFT) Highest value of “rate of rise of commutating voltage”. It will not switch-on the device again until after the voltage has decreased to zero and the trigger current is switched to zero (IF x IFT) Emitter, emitter terminal Farad; unit: F = C/V Frequency; unit: Hz (Hertz), S-1 Cut-off frequency; the frequency at which the coupler of the small signal current transfer ratio 1 of its lowest frequency value has decreased to -----2 GB hFE IB IBD IBM IC IC ICAV ICDC ICM ICM iC iC ICB ICBO ICEO ICM ICX IDRM IE IEBO IECO IF IFoff IFon IFAV IFM IFSM IFT IH IL Gain bandwidth product; gain bandwidth product is defined as the product of M times the frequency of measurement, when the diode is biased for maximum of obtainable gain DC current gain Base current DC off-state current (leakage current) Base peak current Collector current RMS varying component Average total value Collector current dc value, no signal Maximum total value Maximum varying component value Instantaneous total value Instantaneous varying component value Collector base current Collector base current, emitter o/c Collector emitter current, base o/c Repetitive peak collector current Cross talk current; for reflex-coupled isolators, collector emitter cut-off current with the IR emitter activated, but without reflecting medium Repetitive peak off-state current; the maximum leakage current that may occur under the conditions of VDRM Continuous emitter current Emitter base current, collector o/c Emitter collector current, base o/c Forward current continuous. The current flowing through the diode in direction of lower resistance The emitter current at which the device is in on- state The emitter current at which the device is in off- state Average (mean) forward current Peak forward current Surge forward current Trigger input current Holding current The minimum current required to maintain the thyristor in the off-state For technical questions, contact: [email protected] www.vishay.com 1 Symbols and Terminology - Alphabetically Vishay Semiconductors Iout IOH IOH-XT IR Iro IS, Input IS, Output ISrel IT ITM ITSM K MT N.C. NEP pd Pdiss PS, Input PS, Output Ptot RIO RL ROFF RON Rth RthJA RthJC S T T t Tamb Tamb TC Tcase td Optocoupler, Phototransistor Output DC output current High level output current Current in output high condition due to cross talk Reverse current, leakage current; current which flows when reverse bias is applied to a semiconductor junction Reverse dark current; reverse dark current which flows through a photoelectric device without radiation/ illumination Safety current for input Safety current for output Relative supply current On-state current; the permissible output current under stated conditions On-state current Maximum surge current Kelvin; the unit of absolute temperature T (also called the Kelvin temperature); also used for temperature changes (formerly °K) Main terminal Not connected Noise equivalent power Partial discharge Power dissipation for a component of the coupler Safety power for input Safety power for output Total power dissipation Input/ output isolation resistor Load resistance OFF resistance of a MOSFET ON resistance of a MOSFET Thermal resistance Thermal resistance, junction ambient Thermal resistance, junction case Displacement Period (duration) Temperature; 0 K = - 273.16 °C; unit: K (Kelvin), °C (Celsius) Time Ambient temperature. It self-heating is significant: Temperature of the surrounding air below the device, under conditions of thermal equilibrium. If self-heating is insignificant: Air temperature in the immediate surroundings of the device Ambient temperature range. As an absolute maximum rating: The maximum permissible ambient temperature range Temperature coefficient; the ratio of the relative change of an electrical quantity to the change in temperature (ΔT) which causes it, under otherwise constant operating conditions Case temperature; the temperature measured at a specified point on the case of a semiconductor device. Unless otherwise stated, this temperature is given as the temperature of the mounting base for devices with metal can Delay time www.vishay.com 2 tf tgd Tj toff ton tp tr TS ts Tsld Tstg UL VBEO VBR VCB VCBO VCC, VS VCE VCEO VCEsat VD Fall time; The time interval between the upper specified value and the lower specified value on the trailing edge of the pulse Note: It is common to use a 90 % value of the signal for the upper specified value and a 10 % value for the lower specified value Trigger delay Junction temperature; it is the spatial mean value of temperature which the junction has acquired during operation. In the case of photo transistors, it is mainly the temperature of collector junction because its inherent temperature is maximum Turn-off time; the time interval between the upper specified value on the trailing edge of the applied input pulse and the lower specified value on the trailing edge of the output pulse toff = td(off) + tf Turn-on time; the time interval between the lower specified value on the trailing edge of the applied input pulse and the upper specified value on the trailing edge of the output pulse ton = td(on) + tf Pulse duration; the time interval between the specified value on the leading edge of the pulse and the specified value on the trailing edge of the output pulse. Note: In most cases the specified value is 50 % of the signal Rise time; the time interval between the lower specified value and the upper specified value on the trailing edge of the pulse. Note: It is common to use a 90 % value of the signal for the upper specified value and a 10 % value for the lower specified value ts storage time Safety temperature Storage time Soldering temperature; maximum allowable temperature for soldering with specified distance from case and its duration Storage temperature range; the temperature range at which the device may be stored or transported without any applied voltage Underwriters laboratory Base emitter voltage, open collector Breakdown voltage Collector-base voltage Collector-base voltage, open emitter; generally, reverse biasing is the voltage applied to anyone of two terminals of a transistor in such a way that one of the junction operates in reverse direction, whereas the third terminal (second junction) is specified separately Supply voltage Collector emitter voltage Collector emitter voltage, open base (IB = 0) Collector emitter saturation voltage; saturation voltage is the dc voltage between collector and emitter for specified (saturation) conditions i.e., IC and IF, whereas the operating point is within the saturation region DC off-state voltage For technical questions, contact: [email protected] Document Number: 80058 Rev. 1.4, 11-Oct-07 Symbols and Terminology - Alphabetically Optocoupler, Phototransistor Output VDRM Repetitive peak off-state voltage; the maximum allowable instantaneous value of repetitive off-state voltage that may be applied across the triac output VEBO Emitter base voltage, open collector VECO Emitter collector voltage, open base VF Forward voltage; the voltage across the diode terminals which results from the flow of current in the forward direction VFRM Repetitive peak forward voltage VFSM Surge forward voltage (non-repetitive) VFWM Crest working forward voltage VIO The voltage between the input terminals and the output terminals VISO Isolation test voltage VIORM The maximum recurring peak (repetitive) voltage value of the opto coupler, characterizing the long-term withstand capability against transient over voltages VIOTM The impulse voltage value of the opto coupler, characterizing the long-term withstand capability against transient overvoltage VIOWM The maximum rms. voltage value of the opto coupler, characterizing the long-term withstand capability of its insulation VO Output voltage VOH Output voltage high VOL Output voltage low Vpd Partial discharge voltage VR Reverse voltage; voltage drop which results from the flow of reverse current VRRM Repetitive peak reverse voltage VRSM Surge reverse voltage (non-repetitive) VRWM Crest working reverse voltage Vs Supply voltage VT d.c. on-state voltage VTM On-state voltage; the maximum voltage when a thyristor is in the on-state VTMrel Relative on-state voltage ΔVF/ΔTambTemperature coefficient for forward voltage ±ϕ Angle of half sensitivity; the plane angles through which a detector, illuminated by a point source, can be rotated in both directions away from the optical axis, before the electrical output of the device falls to half the maximum value ±j Angle of half sensitivity; the plane angles through which an emitter can be rotated in both directions away from the optical axis, before the electrical output of a linear detector facing the emitter falls to half the maximum value Document Number: 80058 Rev. 1.4, 11-Oct-07 Vishay Semiconductors DATA SHEET STRUCTURE Data sheet information is generally presented in the following sequence: • • • • • • • • • • Features Agency approvals Applications Description Order information Absolute maximum ratings Thermal data - thermal resistances Electrical characteristics Diagrams Dimensions (mechanical data) DESCRIPTION The following information is provided: type number, semiconductor materials used, sequence of zones, technology used, device type and, if necessary, construction. Also, short-form information on special features and the typical applications is given. ABSOLUTE MAXIMUM RATINGS These define maximum permissible operational and environmental conditions. If any one of these conditions is exceeded, it could result in the destruction of the device. Unless otherwise specified, an ambient temperature of 25 ± 3 °C is assumed for all absolute maximum ratings. Most absolute ratings are static characteristics; if measured by a pulse method, the associated measurement conditions are stated. Maximum ratings are absolute (i.e., not interdependent). Any equipment incorporating semiconductor devices must be designed so that even under the most unfavorable operating conditions the specified maximum ratings of the devices used are never exceeded. These ratings could be exceeded because of changes in • Supply voltage, the properties of other components used in the equipment • Control settings • Load conditions • Drive level • Environmental conditions and the properties of the devices themselves (i.e., ageing) THERMAL DATA – THERMAL RESISTANCES Some thermal data (e.g., junction temperature, storage temperature range, total power dissipation) are given under the heading “Absolute maximum ratings”; (This is because they impose a limit on the application range of the device). The thermal resistance junction ambient (RthJA) quoted is that which would be measured without artificial cooling, i.e., under worst case conditions. Temperature coefficients, on the other hand, are listed together with the associated parameters under “Optical and electrical characteristics”. For technical questions, contact: [email protected] www.vishay.com 3 Symbols and Terminology - Alphabetically Optocoupler, Phototransistor Output Vishay Semiconductors ELECTRICAL CHARACTERISTICS Not for new Here, the most important operational, electrical characteristics (minimum, typical and maximum values) are listed. The associated test conditions, supplemented with curves and an AQL-value quoted for particularly important parameters (see “Qualification and Monitoring”) are also given. This heading indicates that the device concerned should not be used in equipment under development. It is, however, available for present production. CTR (current transfer ratio) = IC/IF IF IC 5V DIAGRAMS Besides the static (DC) and dynamic (AC) characteristics, a family of curves is given for specified operating conditions. These curves show the typical independence of individual characteristics. 5V 0 DIMENSIONS (MECHANICAL DATA) This list contains important dimensions and the sequence of connection, supplemented by a circuit diagram. Case outline drawings carry DIN-, JEDEC or commercial designations. Information on the angle of sensitivity or intensity and weight completes the list of mechanical data. A C C E Input Vout 0 Output Galvanically separation 5 DC 4 S' 3 6 2 S 1 Please Note: If the dimensional information does not include any tolerances, the following applies: Lead length and mounting hole dimensions are minimum values. Radiant sensitive (or emitting area respectively) are typical values, all other dimensions are maximum. Any device accessories must be ordered separately, quoting the order number. 16513 Major parameters: ADDITIONAL INFORMATION Forward current Collector current CTR e.g. Isolation test voltage Saturation voltage Preliminary specifications This heading indicates that some information on preliminary specifications may be subject to slight changes. IF IC IC/IF or % 0.8 or 80 % VIO VCEsat Fig. 1 - Basic application of an optocoupler EXAMPLE FOR USING SYMBOLS ACCORDING TO DIN EN 60747-5-2 (VDE 0884)/ DIN EN 60747-5-5 PENDING a) Transistor AC value Icm Ic Collector current Icav ic ICAV ICM IC IC DC value, no signal ICAV Average total value ICM; IC Maximum total value IC RMS varying component ICM; IC Maximum varying component value iC Instantaneous total value iC Instantaneous varying component value The following relationships are valid: iC ICM = ICAV + ICM iC = ICAV + iC without signal with signal t 93 7795 Fig. 2 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 80058 Rev. 1.4, 11-Oct-07 Symbols and Terminology - Alphabetically Optocoupler, Phototransistor Output Vishay Semiconductors c) Triac b) Diode VF Quadrant I +I VFSM +IT VFRM VFWM Forward breakover voltage/current +IH +VT -V 0 +IDRM -V DRM +VDRM +V -I DRM t -V T VRWM VRRM -I H Reverse breakover voltage/current VRSM -I T VR Quadrant III 93 7796 -I 9611881 Fig. 4 Fig. 3 VF Forward voltage IDRM Repetitive peak off-state current VR Reverse voltage IFT Threshold forward current VFSM Surge forward voltage (non-repetitive) IH Holding current VRSM Surge reverse voltage (non-repetitive) IT On-state current VFRM Repetitive peak forward voltage VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage VTM On-state voltage VFWM Crest working forward voltage VRWM Crest working reverse voltage c) Optocoupler related isolation test voltages Test sequence Test 1 Test 3 VIO VIOTM V V t1, t2 = 0.1 s t3, t4 = 0.1 s ttst = 1 s tstres = 1.2 s t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s Test 2 VPd VPd VIOWM VIORM 0 t t1 tini ttst t2 t3 ttst 0 t4 t3 ttest t4 t1 tini = 60 s ttst tstres Test 1: Isolation test voltage (VIO) - piece test Test 2: Partial discharge test voltage (VPD) - piece test Test 3: Partial discharge test voltage (VPD) - sample test t2 tstres t 15098 Fig. 5 Document Number: 80058 Rev. 1.4, 11-Oct-07 For technical questions, contact: [email protected] www.vishay.com 5 Symbols and Terminology - Alphabetically Vishay Semiconductors Optocoupler, Phototransistor Output TABLE 1 - RECOMMENDED TRANSIENT OVERVOLTAGES (VIOTM, PEAK VALUES) RELATED TO AC/DC LINE VOLTAGE (PEAK VALUES) VIOWM/VIORM UP TO APPL. CLASS I APPL. CLASS II APPL. CLASS III APPL. CLASS IV 50 V 350 V 500 V 800 V 1500 V 100 V 500 V 800 V 1500 V 2500 V 150 V 800 V 1500 V 2500 V 4000 V 300 V 1500 V 2500 V 4000 V 6000 v 600 V 2500 V 4000 V 6000 V 8000 V 1000 V 4000 V 6000 V 8000 V 12000 V Rated isolation voltages: VIO is the voltage between the input terminals and the output terminals. Note: All voltages are peak voltages! • VIOWM is a maximum rms. voltage value of the optocouplers assigned by VISHAY. This characterizes the long term withstand capability of its insulation • VIORM is a maximum recurring peak (repetitive) voltage value of the optocoupler assigned by VISHAY. This characterizes the long-term withstand capability against recurring peak voltages • VIOTM is an impulse voltage value of the optocoupler assigned by VISHAY. This characterizes the long-term withstand capability against transient over voltages www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 80058 Rev. 1.4, 11-Oct-07