Download Symbols and Terminology - Alphabetically

Symbols and Terminology - Alphabetically
Vishay Semiconductors
Symbols and Terminology - Alphabetically
A
A
A
a
AOQ
B
bit/s
C
C
C
C
°C
CCE
CEB
CCB
CCEO
CD
CI, CIN
CIO
Cio
|CMH|
|CML|
CO
Cj
Ck
CMTI
CMR
CTI
CTR
CTR
(a.c.)
CTR
(d.c.)
d
dV/dtcr
Anode, anode terminal
Ampere; SI unit of electrical current
Radiant sensitive area; that area which is
radiant-sensitive for a specified range
Distance between the emitter (source) and the
detector
Average Outgoing Quality “Qualification and
Monitoring” (see page XX)
Base, base terminal
Data rate or signaling rate; 1000 bit/s = 1 kbit/s,
106 bit/s = 1 Mbit/s
Capacitance; unit: F (farad) = C/V
Coulomb; C = s x A
Cathode, cathode terminal
Collector, collector terminal
Celsius; unit of the centigrade scale; can also be
used (besides K) to express temperature changes
Symbols: T, DT; T (°C) = T (K) - 273
Collector emitter capacitance at a specified
frequency
Emitter base capacitance
Collector base capacitance
Collector emitter capacitance. Capacitance
between the collector and the emitter with open
base. Measurement is made by applying reverse
voltage between collector and emitter terminals
Diode capacitance; total capacitance effective
between the diode terminals due to case, junction
and parasitic capacitances
Input capacitance
Input-output capacitance
Input-output capacitance at a specified frequency
Absolute value of CMTI at logic high level output
Absolute value of CMTI at logic low level output
Output capacitance
Junction capacitance; capacitance due to a
PN-junction of a diode. It decreases with
increasing reverse voltage
Coupling capacitance; capacitance between the
emitter and the detector of an opto isolator
Common mode transient immunity
Common mode rejection
Comparative tracking index
Current transfer ratio; ratio between output and
input current
Current transfer ratio at a specified frequency
(also hF)
Current transfer ratio at a specified frequency
(also hF)
Distance
Critical rate of rise of off-state voltage
(IF = 0) Highest value of “rate of rise of off-state
voltage” which will cause no switching from the
off-state to the on-state
Document Number: 80058
Rev. 1.4, 11-Oct-07
dV/dtcrq
E
F
f
fctr
Critical rate of rise of commutating voltage (IF x IFT)
Highest value of “rate of rise of commutating
voltage”. It will not switch-on the device again until
after the voltage has decreased to zero and the
trigger current is switched to zero (IF x IFT)
Emitter, emitter terminal
Farad; unit: F = C/V
Frequency; unit: Hz (Hertz), S-1
Cut-off frequency; the frequency at which the
coupler of the small signal current transfer ratio
1 of its lowest frequency value
has decreased to -----2
GB
hFE
IB
IBD
IBM
IC
IC
ICAV
ICDC
ICM
ICM
iC
iC
ICB
ICBO
ICEO
ICM
ICX
IDRM
IE
IEBO
IECO
IF
IFoff
IFon
IFAV
IFM
IFSM
IFT
IH
IL
Gain bandwidth product; gain bandwidth product is
defined as the product of M times the frequency of
measurement, when the diode is biased for
maximum of obtainable gain
DC current gain
Base current
DC off-state current (leakage current)
Base peak current
Collector current
RMS varying component
Average total value
Collector current dc value, no signal
Maximum total value
Maximum varying component value
Instantaneous total value
Instantaneous varying component value
Collector base current
Collector base current, emitter o/c
Collector emitter current, base o/c
Repetitive peak collector current
Cross talk current; for reflex-coupled isolators,
collector emitter cut-off current with the IR emitter
activated, but without reflecting medium
Repetitive peak off-state current; the maximum
leakage current that may occur under the
conditions of VDRM
Continuous emitter current
Emitter base current, collector o/c
Emitter collector current, base o/c
Forward current continuous. The current flowing
through the diode in direction of lower resistance
The emitter current at which the device is in
on- state
The emitter current at which the device is in
off- state
Average (mean) forward current
Peak forward current
Surge forward current
Trigger input current
Holding current
The minimum current required to maintain the
thyristor in the off-state
For technical questions, contact: [email protected]
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1
Symbols and Terminology - Alphabetically
Vishay Semiconductors
Iout
IOH
IOH-XT
IR
Iro
IS, Input
IS, Output
ISrel
IT
ITM
ITSM
K
MT
N.C.
NEP
pd
Pdiss
PS, Input
PS, Output
Ptot
RIO
RL
ROFF
RON
Rth
RthJA
RthJC
S
T
T
t
Tamb
Tamb
TC
Tcase
td
Optocoupler, Phototransistor
Output
DC output current
High level output current
Current in output high condition due to cross talk
Reverse current, leakage current; current which
flows when reverse bias is applied to a
semiconductor junction
Reverse dark current; reverse dark current which
flows through a photoelectric device without
radiation/ illumination
Safety current for input
Safety current for output
Relative supply current
On-state current; the permissible output current
under stated conditions
On-state current
Maximum surge current
Kelvin; the unit of absolute temperature T (also
called the Kelvin temperature); also used for
temperature changes (formerly °K)
Main terminal
Not connected
Noise equivalent power
Partial discharge
Power dissipation for a component of the coupler
Safety power for input
Safety power for output
Total power dissipation
Input/ output isolation resistor
Load resistance
OFF resistance of a MOSFET
ON resistance of a MOSFET
Thermal resistance
Thermal resistance, junction ambient
Thermal resistance, junction case
Displacement
Period (duration)
Temperature; 0 K = - 273.16 °C; unit: K (Kelvin),
°C (Celsius)
Time
Ambient temperature. It self-heating is significant:
Temperature of the surrounding air below the
device, under conditions of thermal equilibrium. If
self-heating is insignificant: Air temperature in the
immediate surroundings of the device
Ambient temperature range. As an absolute
maximum rating: The maximum permissible
ambient temperature range
Temperature coefficient; the ratio of the relative
change of an electrical quantity to the change in
temperature (ΔT) which causes it, under otherwise
constant operating conditions
Case temperature; the temperature measured at a
specified point on the case of a semiconductor
device. Unless otherwise stated, this temperature
is given as the temperature of the mounting base
for devices with metal can
Delay time
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2
tf
tgd
Tj
toff
ton
tp
tr
TS
ts
Tsld
Tstg
UL
VBEO
VBR
VCB
VCBO
VCC, VS
VCE
VCEO
VCEsat
VD
Fall time; The time interval between the upper
specified value and the lower specified value on
the trailing edge of the pulse
Note: It is common to use a 90 % value of the
signal for the upper specified value and a 10 %
value for the lower specified value
Trigger delay
Junction temperature; it is the spatial mean value
of temperature which the junction has acquired
during operation. In the case of photo transistors,
it is mainly the temperature of collector junction
because its inherent temperature is maximum
Turn-off time; the time interval between the upper
specified value on the trailing edge of the applied
input pulse and the lower specified value on the
trailing edge of the output pulse
toff = td(off) + tf
Turn-on time; the time interval between the lower
specified value on the trailing edge of the applied
input pulse and the upper specified value on the
trailing edge of the output pulse
ton = td(on) + tf
Pulse duration; the time interval between the
specified value on the leading edge of the pulse
and the specified value on the trailing edge of the
output pulse.
Note: In most cases the specified value is 50 % of
the signal
Rise time; the time interval between the lower
specified value and the upper specified value on
the trailing edge of the pulse.
Note: It is common to use a 90 % value of the
signal for the upper specified value and a 10 %
value for the lower specified value ts storage time
Safety temperature
Storage time
Soldering temperature; maximum allowable
temperature for soldering with specified distance
from case and its duration
Storage temperature range; the temperature
range at which the device may be stored or
transported without any applied voltage
Underwriters laboratory
Base emitter voltage, open collector
Breakdown voltage
Collector-base voltage
Collector-base voltage, open emitter; generally,
reverse biasing is the voltage applied to anyone of
two terminals of a transistor in such a way that one
of the junction operates in reverse direction,
whereas the third terminal (second junction) is
specified separately
Supply voltage
Collector emitter voltage
Collector emitter voltage, open base (IB = 0)
Collector emitter saturation voltage; saturation
voltage is the dc voltage between collector and
emitter for specified (saturation) conditions i.e., IC
and IF, whereas the operating point is within the
saturation region
DC off-state voltage
For technical questions, contact: [email protected]
Document Number: 80058
Rev. 1.4, 11-Oct-07
Symbols and Terminology - Alphabetically
Optocoupler, Phototransistor
Output
VDRM
Repetitive peak off-state voltage; the maximum
allowable instantaneous value of repetitive
off-state voltage that may be applied across the
triac output
VEBO
Emitter base voltage, open collector
VECO
Emitter collector voltage, open base
VF
Forward voltage; the voltage across the diode
terminals which results from the flow of current in
the forward direction
VFRM
Repetitive peak forward voltage
VFSM
Surge forward voltage (non-repetitive)
VFWM
Crest working forward voltage
VIO
The voltage between the input terminals and the
output terminals
VISO
Isolation test voltage
VIORM
The maximum recurring peak (repetitive) voltage
value of the opto coupler, characterizing the
long-term withstand capability against transient
over voltages
VIOTM
The impulse voltage value of the opto coupler,
characterizing the long-term withstand capability
against transient overvoltage
VIOWM
The maximum rms. voltage value of the opto
coupler, characterizing the long-term withstand
capability of its insulation
VO
Output voltage
VOH
Output voltage high
VOL
Output voltage low
Vpd
Partial discharge voltage
VR
Reverse voltage; voltage drop which results from
the flow of reverse current
VRRM
Repetitive peak reverse voltage
VRSM
Surge reverse voltage (non-repetitive)
VRWM
Crest working reverse voltage
Vs
Supply voltage
VT
d.c. on-state voltage
VTM
On-state voltage; the maximum voltage when a
thyristor is in the on-state
VTMrel
Relative on-state voltage
ΔVF/ΔTambTemperature coefficient for forward voltage
±ϕ
Angle of half sensitivity; the plane angles through
which a detector, illuminated by a point source,
can be rotated in both directions away from the
optical axis, before the electrical output of the
device falls to half the maximum value
±j
Angle of half sensitivity; the plane angles through
which an emitter can be rotated in both directions
away from the optical axis, before the electrical
output of a linear detector facing the emitter falls to
half the maximum value
Document Number: 80058
Rev. 1.4, 11-Oct-07
Vishay Semiconductors
DATA SHEET STRUCTURE
Data sheet information is generally presented in the following
sequence:
•
•
•
•
•
•
•
•
•
•
Features
Agency approvals
Applications
Description
Order information
Absolute maximum ratings
Thermal data - thermal resistances
Electrical characteristics
Diagrams
Dimensions (mechanical data)
DESCRIPTION
The following information is provided: type number,
semiconductor materials used, sequence of zones,
technology used, device type and, if necessary, construction.
Also, short-form information on special features and the
typical applications is given.
ABSOLUTE MAXIMUM RATINGS
These define maximum permissible operational and
environmental conditions. If any one of these conditions is
exceeded, it could result in the destruction of the device.
Unless otherwise specified, an ambient temperature of
25 ± 3 °C is assumed for all absolute maximum ratings.
Most absolute ratings are static characteristics; if measured
by a pulse method, the associated measurement conditions
are stated. Maximum ratings are absolute (i.e., not
interdependent).
Any equipment incorporating semiconductor devices must
be designed so that even under the most unfavorable
operating conditions the specified maximum ratings of the
devices used are never exceeded. These ratings could be
exceeded because of changes in
• Supply voltage, the properties of other components used in
the equipment
• Control settings
• Load conditions
• Drive level
• Environmental conditions and the properties of the devices
themselves (i.e., ageing)
THERMAL DATA – THERMAL RESISTANCES
Some thermal data (e.g., junction temperature, storage
temperature range, total power dissipation) are given under
the heading “Absolute maximum ratings”; (This is because
they impose a limit on the application range of the device).
The thermal resistance junction ambient (RthJA) quoted is
that which would be measured without artificial cooling, i.e.,
under worst case conditions.
Temperature coefficients, on the other hand, are listed
together with the associated parameters under “Optical and
electrical characteristics”.
For technical questions, contact: [email protected]
www.vishay.com
3
Symbols and Terminology - Alphabetically
Optocoupler, Phototransistor
Output
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
Not for new
Here, the most important operational, electrical
characteristics (minimum, typical and maximum values) are
listed. The associated test conditions, supplemented with
curves and an AQL-value quoted for particularly important
parameters (see “Qualification and Monitoring”) are also
given.
This heading indicates that the device concerned should not
be used in equipment under development. It is, however,
available for present production.
CTR (current transfer ratio) = IC/IF
IF
IC
5V
DIAGRAMS
Besides the static (DC) and dynamic (AC) characteristics, a
family of curves is given for specified operating conditions.
These curves show the typical independence of individual
characteristics.
5V
0
DIMENSIONS (MECHANICAL DATA)
This list contains important dimensions and the sequence of
connection, supplemented by a circuit diagram. Case outline
drawings carry DIN-, JEDEC or commercial designations.
Information on the angle of sensitivity or intensity and weight
completes the list of mechanical data.
A
C
C
E
Input
Vout
0
Output
Galvanically separation
5
DC
4
S'
3
6
2
S
1
Please Note:
If the dimensional information does not include any
tolerances, the following applies:
Lead length and mounting hole dimensions are minimum
values. Radiant sensitive (or emitting area respectively) are
typical values, all other dimensions are maximum.
Any device accessories must be ordered separately, quoting
the order number.
16513
Major parameters:
ADDITIONAL INFORMATION
Forward current
Collector current
CTR
e.g.
Isolation test voltage
Saturation voltage
Preliminary specifications
This heading indicates that some information on preliminary
specifications may be subject to slight changes.
IF
IC
IC/IF or %
0.8 or 80 %
VIO
VCEsat
Fig. 1 - Basic application of an optocoupler
EXAMPLE FOR USING SYMBOLS
ACCORDING TO DIN EN 60747-5-2 (VDE 0884)/ DIN EN 60747-5-5 PENDING
a) Transistor
AC value
Icm
Ic
Collector
current
Icav
ic
ICAV
ICM
IC
IC
DC value, no signal
ICAV
Average total value
ICM; IC
Maximum total value
IC
RMS varying component
ICM; IC
Maximum varying component value
iC
Instantaneous total value
iC
Instantaneous varying component value
The following relationships are valid:
iC
ICM = ICAV + ICM
iC = ICAV + iC
without signal
with signal
t
93 7795
Fig. 2
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4
For technical questions, contact: [email protected]
Document Number: 80058
Rev. 1.4, 11-Oct-07
Symbols and Terminology - Alphabetically
Optocoupler, Phototransistor
Output
Vishay Semiconductors
c) Triac
b) Diode
VF
Quadrant I
+I
VFSM
+IT
VFRM
VFWM
Forward breakover
voltage/current
+IH
+VT
-V
0
+IDRM
-V DRM
+VDRM +V
-I DRM
t
-V T
VRWM
VRRM
-I H
Reverse breakover
voltage/current
VRSM
-I T
VR
Quadrant III
93 7796
-I
9611881
Fig. 4
Fig. 3
VF
Forward voltage
IDRM
Repetitive peak off-state current
VR
Reverse voltage
IFT
Threshold forward current
VFSM
Surge forward voltage (non-repetitive)
IH
Holding current
VRSM
Surge reverse voltage (non-repetitive)
IT
On-state current
VFRM
Repetitive peak forward voltage
VDRM
Repetitive peak off-state voltage
VRRM
Repetitive peak reverse voltage
VTM
On-state voltage
VFWM
Crest working forward voltage
VRWM
Crest working reverse voltage
c) Optocoupler related isolation test voltages
Test sequence
Test 1
Test 3
VIO
VIOTM
V
V
t1, t2 = 0.1 s
t3, t4 = 0.1 s
ttst = 1 s
tstres = 1.2 s
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
Test 2
VPd
VPd
VIOWM
VIORM
0
t
t1
tini
ttst
t2
t3
ttst
0
t4
t3 ttest t4
t1
tini = 60 s
ttst
tstres
Test 1: Isolation test voltage (VIO) - piece test
Test 2: Partial discharge test voltage (VPD) - piece test
Test 3: Partial discharge test voltage (VPD) - sample test
t2
tstres
t
15098
Fig. 5
Document Number: 80058
Rev. 1.4, 11-Oct-07
For technical questions, contact: [email protected]
www.vishay.com
5
Symbols and Terminology - Alphabetically
Vishay Semiconductors
Optocoupler, Phototransistor
Output
TABLE 1 - RECOMMENDED TRANSIENT OVERVOLTAGES (VIOTM, PEAK VALUES) RELATED
TO AC/DC LINE VOLTAGE (PEAK VALUES)
VIOWM/VIORM UP TO
APPL. CLASS I
APPL. CLASS II
APPL. CLASS III
APPL. CLASS IV
50 V
350 V
500 V
800 V
1500 V
100 V
500 V
800 V
1500 V
2500 V
150 V
800 V
1500 V
2500 V
4000 V
300 V
1500 V
2500 V
4000 V
6000 v
600 V
2500 V
4000 V
6000 V
8000 V
1000 V
4000 V
6000 V
8000 V
12000 V
Rated isolation voltages:
VIO is the voltage between the input terminals and the output
terminals.
Note: All voltages are peak voltages!
• VIOWM is a maximum rms. voltage value of the
optocouplers assigned by VISHAY. This characterizes the
long term withstand capability of its insulation
• VIORM is a maximum recurring peak (repetitive) voltage
value of the optocoupler assigned by VISHAY. This
characterizes the long-term withstand capability against
recurring peak voltages
• VIOTM is an impulse voltage value of the optocoupler
assigned by VISHAY. This characterizes the long-term
withstand capability against transient over voltages
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6
For technical questions, contact: [email protected]
Document Number: 80058
Rev. 1.4, 11-Oct-07