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Transcript
50 Chapter J fundamental quantities 31 many varieties of 21 process control 29 MOSFET model 53 process technology 5 not very portable 30 substrate wafer 27 origins of 30 Sichman-Hodges 55 parameter computations 31 Source versus IBIS 29 FET structure 13 Space charge region 33 Spectre 21 SPICE Standards organizations 60 Surface inversion 15 as behavioral model 21 TCAD 4, 53 as physical model 21 and SPICE 21 assumptions 40 introduction 20 Berkeley models 54 more comprehensive than SPICE 31 BJT model 40 BJT model comparisons 22 commercial software 21 submicron modeling 2 TCAD-SPICE examples 31 comparision of BJT parameters 51 Threshold voltage 14, 15 diode model 35, 37 Va 46 EKV models 54 VAF 46, 52 flavors 53 Voltage HSPICE 29 10.1.1.2 Figures gate threshold 16
