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SPICE Device Model SUP/SUB75N08-10 N-Channel Enhancement-Mode Transistors Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse Recovery Characteristics Description capacitance network is used to model gate charge characteristics while avoiding convergence problems of switched Cgd model. Model parameter values are optimized to provide a best fit to measured electrical data and are not intended as an exact physical description of a device. The attached SPICE Model describes typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model was extracted and optimized over a 25°C to 125°C temperature range under pulse conditions for 0 to 10 volt gate drives. Saturated output impedance model accuracy has been maximized for gate biases near threshold. A novel gate-to-drain feedback D Model Subcircuit 4 R1 M2 M1 G CGS 3 DBD 1 2 S This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Siliconix 9/14/98 Document: 70936 1 SPICE Device Model SUP/SUB75N08-10 Model Evaluation N-Channel Device (TJ=25°C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage On-State Drain Currentb Drain-Source On-State Resistanceb Symbol Test Conditions Typ Unit VGS(th) ID(on) rDS(on) VDS = VGS, ID = 250µA VDS = 5V, VGS = 10V VGS = 10V, ID = 30A VGS = 10V, ID = 30A, TJ = 125°C 3.12 416 0.011 0.018 V A VGS = 10V, ID = 30A, TJ = 175°C VDS = 15V, ID = 30A IF = 75A, VGS = 0V 0.022 Forward Transconductanceb Forward Voltageb Dynamica Input Capacitance Output Capacitance gfs VSD Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge c Crss Qg Qgs Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Qgd td(on) tr td(off) Fall Timec Reverse Recovery Time Ciss Coss tf trr VGS = 0V, VDS = 25V, f = 1MHz VDS = 30V, VGS = 10V, ID = 75A VDD = 30V, RL = 0.47Ω ID ≅ 75A, VGEN = 10V, RG = 2.5Ω IF = 75A, di/dt =100A/µs Ω 60 0.92 S V 4890 963 pF 221 83 31 nC 24 57 31 62 ns 20 100 ns Notes: a) Guaranteed by design, not subject to production testing b) Pulse test: pulse width ≤ 300 µsec, duty cycle ≤ 2% c) Independent of operating temperature Siliconix 9/14/98 Document: 70936 2 SPICE Device Model SUP/SUB75N08-10 Comparison of Model with Measured Data (TJ=25°C Unless Otherwise Noted) 250 200 150C 200 Vgs=7V ID - Drain Current (A) 150 Vgs=6V 100 50 -55C 150 100 50 25C Vgs=5V 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0.08 6 0.06 4 0.04 0.02 rDS(on) 0 2 4 6 8 rDS(on) - On-Resistance (Ohm) Sqrt (IDsat) (A) Sqrt( IDsat) 8 0 4 8 10 0.016 Vgs = 10V 0.012 Vgs = 20V 0.008 0.004 0 10 0 0 20 VGS - Gate-to-Source Voltage (V) 40 60 80 100 ID - Drain Current (A) 7000 30 20 Vds 6000 Vgs Ciss 5000 4000 Vds (V) Capacitance (pF) 6 0.02 0.1 2 2 VGS - Gate-to-Source (V) rDS(on) - On-Resistance (Ohm) 10 0 10 3000 24 16 18 12 12 8 6 4 2000 Coss 1000 Crss 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage ( V ) 60 0 0 25 50 75 100 125 150 Qg (nC) Siliconix 9/14/98 Document: 70936 3 0 175 Vgs (V) ID - Drain Current (A) Vgs= 10, 9, 8V Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1