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Basic Fundamentals of Solar Cell Semiconductor Physics for High School Level Physics Review Topics Wavelength and Frequency amplitude Period (sec) time Frequency (n) = 1/Period [cycles/sec or Hertz] Wavelength (l) = length of one Period [meters] For an electromagnetic wave c = nl, where c is the speed of light (2.998 x 108 m/sec) Spectrum Intensity Frequency (n) Range of frequency (or wavelength, c/n) responses or source emissions. The human eye has a response spectrum ranging from a wavelength of 0.4 microns (0.4 x 10-6 meters) (purple) to 0.8 microns (red) Energy and Power Electromagnetic waves (light, x-rays, heat) transport energy. E = hn or hc/l [Joules or eV (electron-volts)] 1 eV = 1.6 x 10-19 Joules h = Plank’s constant (6.625 x 10-34 Joule-sec or 4.135 x 10-15 eV-sec) n = frequency c = speed of light l = wavelength Power is the amount of energy delivered per unit time. P = E/t [Joules/sec or Watts] Photons A light particle having energy. Sunlight is a spectrum of photons. X-rays and heat are photons also. Photon Energy E = hn or hc/l [Joules or eV (electron-volts)] (higher frequency = higher energy) (lower energy) Irradiance Amount of power over a given area, Watts/m2 4 red photons every second Area = 2.00 m2 Energy of 1 red photon = hc/l = (6.63 x 10-34 J-s)(2.99 x 108 m/s)/(0.80 x 10-6 meters) = 2.48 x 10-19 J = 1.55 eV Irradiance = Power/Area = (4 photons/sec)(Energy of 1 photon)/2.00 m2 = 4.96 x 10-19 W/m2 Typical sunlight irradiance is 0.093 W/cm2 = 930 W/m2 at l = .55 mm Solar Spectrum at Earth Surface (noon time) 925 W/m2 E (eV) = hc/l l = hc/E Visable range .75 mm (red) - .4 mm (purple) 1.6 eV - 3.1 eV Solar Spectrum at Earth Surface .5 eV - 3.6 eV mm (infrared) - 0.34 mm (ultraviolet) visible inrfared ultraviolet Solar Spectrum at Earth Surface (noon time) Transmission, Reflection, and Absorption incident light air material reflectance (R) transmittance (T) + absorptance (A) • Incident light = T + R + A = 100% • Non-transparent materials have either very high reflection or very high absorption. • Absorption decreases transmission intensity with increasing depth into material. Polarization Polarizer Unpolarized light (e.g. sunlight) Linearly polarized light Only one plane of vibration passes Basics of Semiconductor Physics Semiconductor Crystal Lattice covalent bond atom Simple Cubic Structure Silicon has a more complex lattice structure but a lattice structure exists nevertheless. Crystalline Silicon Bonds valance electrons Si atom (Group IV) = covalent bond (electron sharing) Breaking of Covalent Bond Creating Electron-Hole Pair free electron moving e- through lattice + covalent bond created hole (missing electron) Si atom Photon (light, heat) Photon hits valance electron with enough energy to create free electron Movement of a Hole in a Semiconductor + + Thermal energy causes valance electron to jump to existing hole leaving a hole behind Valance and Conduction Energy Bands free electron moving in lattice structure Conduction eEnergy Band Ec Band Gap Energy, Eg = Ec - Ev Valance Energy Band covalent bonds + Ev Hole within valance band Valance and Conduction Energy Bands Thermal Equalibrium free electron combines free electron within with hole lattice structure Conduction eeEnergy Band Ec Eg Heat enery given up Valance Energy Band covalent bonds Heat energy absorbed + + Ev Hole created within valance band Energy absorbed = Energy given up Intrinsic (pure) Silicon Electron-Hole Pairs Thermal Equalibrium ni = 1.5 x 1010 cm-3 at 300° K Conduction eBand Ec Eg = 1.12 eV hole density = electron density number of holes per cubic centimeter = number of free electrons per cubic centimeter pi = ni = 1.5 x 1010 cm-3 pi = 1.5 x 1010 cm-3 at 300° K Valance Band + Ev covalent bonds •Number of electron-hole pairs increase with increasing temperature •The thermal voltage, Vt is equal to kT/e (k = 8.62 x 10-5 eV/K, T = [Kelvin]) Creating a Semiconductor Doping or Substitutional Impurities Group V Atom (Donor or N-type Doping) Phospherous (Group V) P atom e- covalent bond Si atom (Group IV) The donor electron is not part of a covalent bond so less energy is required to create a free electron Energy Band Diagram of Phospherous Doping intrinsic free electron Conduction Band donor free electron e- eEc Donor Electron Energy n > p (more electrons in conduction band) Eg Valance Band covalent bonds A small amount of thermal energy (300° K) elevates the donor electron to the conduction band + intrinsic hole N-type Semiconductor Ev Doping or Substitutional Impurities Group III Atom (Acceptor or P-type Doping) Boron (Group III) + B atom covalent bond created hole covalent bond Si atom Boron atom attacts a momentarily free valance electron creating a hole in the Valance Band Energy Band Diagram of Boron Doping intrinsic free electron Conduction Band eEc p > n (more holes in valance band) Eg A small amount of thermal energy (300° K) elevates the acceptor electron to the Acceptor band acceptor electron Acceptor Electron Energy Valance Band e+ + Ev created hole covalent bonds intrinsic hole P-type Semicondutor Charge Transport Mechanisms within a Semiconductor • Drift Current Density • Diffusion Current Density Current The number of holes or electrons passing through a cross sectional area, A, in one second x y + + + + + + + I = q/t [I] = [coulombs/sec] = [amps] + + Applied Electric Field and Direction of Current eee- • holes move in Current direction • electrons move in opposite direction e- eee- ee- + + + Current Density The number of holes or electrons passing through a cross sectional area, A, in one second divided by A x A (area) = xy cm2 y + + I (amps) = coulombs/sec + + J (current density) = I/A + + [J] =[amps/cm2] Applied Electric Field and Direction of Current eee- e- eee- ee- Drift Velocity The average velocity of a hole (vp) or electon (ve) moving through a conducting material Applied Electric Field e- + dp vp = dp/t1 Scattering Sites dn ve = dn/t1 • Scattering Sites are caused by impurities and thermal lattice vibrations • Electrons typically move faster than holes (ve>vp) Drift Velocity and Applied Electric Field Newton’s Second Law of Motion F = ma Analogy with Electic Fields m q (mass charge) a E (accelerating field applied electric field) F = qE Without scattering sites, the charged particle would undergo a constant acceleration. Scattering sites create an average drift velocity. Similar to the terminal velocity of a falling object caused by air friction. Drift Velocity and Applied Electric Field (cont’d) • F = qE • The force, F, on a charged partical is proportional to the electric field, E • Scattering sites create an average drift velocity, vp or ve • The average drift velocity is proportional to the applied electric field • vp = μpE • ve = -μnE (negative sign due to electrons moving in opposite direction of applied electric field) where μp and μn are constants of proportionality Hole and Electron Mobility μp is the hole mobility in the conducting material μn is the electron mobility in the conducting material The units of mobility, μ, are v = μE [cm/sec] = [μ] [volts/cm] [μ] = [cm2/volt-sec] Typical mobility values in Silicon at 300° K: μp = 480 cm2/volt-sec μn = 1350 cm2/volt-sec Mobility and Current Density Relation Current I = q/t q = number of charged particles passing through a cross sectional area t = time Current Density J = I/A = (q/t)/A A = cross sectional area p = number of holes per cubic centimeter (hole density [1/cm3]) n = number of electrons per cubic centimeter (electron density [1/cm3]) Each hole has an average velocity of vp Each electron has an average velocity of ve Mobility and Current Density for Holes E x x + + y + vp + + + + vp + y + + z z Each hole has traveled a distance z in a time t = z/vp The number of holes in the volume is pV (hole density x volume) The charge of each hole is e (1.6 x 10-19 coulombs) I = q/t = e(pV)/(z/vp) = ep(xyz)/(z/vp) = ep(xy)vp = epA μpE Jp|drf = Ip/A = epμpE Mobility and Current Density for Electrons E x x e- ve y ee- eve y ee- eeee- z z Replacing p with n and vp with ve gives: The charge of each electron is -e (-1.6 x 10-19 coulombs) I = q/t = -epV/(z/ve) = -ep(xyz)/(z/ve) = -ep(xy)ve = -epA(-μnE) I = epA(μnE) Jn |drf = In/A = enμnE Drift Current Density Expressions Jp|drf = Ip/A = enμpE Jn|drf = In/A = enμnE Jp|drf and Jn|drf are in same direction Total Drift Current = Jp|drf + Jn|drf Diffusion Process gas filled chamber sealed membrane empty chamber gas After seal is broken Gas molecules move from high concentration region to low concentration region after membrane is broken If gas molecules are replaced by charge then a current exists during charge transport creating a Diffusion Current Electron concentration, n Electron Diffusion Current electron flow slope = Dn/Dx Electron diffusion current density x distance • electron flow is from high to low concentration (-x direction) • electron diffusion current density is in positive x direction • Jn|dif = eDnDn/Dx where Dn is the electron diffusion constant Hole concentration, p Hole Diffusion Current hole flow slope = Dp/Dx Hole diffusion current density x distance • hole flow is from high to low concentration (-x direction) • hole diffusion current density is in negative x direction • Jp|dif = -eDnDp/Dx where Dp is the hole diffusion constant Diffusion Currents • Jn|dif = eDnDn/Dx • Jp|dif = -eDnDp/Dx • Electron and hole diffusion currents are in opposite directions for the same direction of increasing concentration Total Diffusion Current = Jn|dif - Jp|dif Formation and Basic Physics of PN Junctions PN Junction Formation Masking Barrier Boron Atom Doping Phophorous Atom Doping Intrinsic Silicon Wafer • Doping Atoms are accelerated towards Silicon Wafer • Doping Atoms are implanted into Silicon Wafer • Wafer is heated to provide necessary energy for Doping Atoms to become part of Silicon lattice structure PN Junction in Thermal Equilibrium (No Applied Electric Field) metallurgical junction P-type Space Charge Region metallurgical junction N-Type Initial Condition p - + + + + n E field Equilibrium Condition • Free electrons from n-region diffuse to p-region leaving donor atoms behind. • Holes from p-region diffuse to n-region leaving acceptor atoms behind. • Internal Electric Field is created within Space Charge Region. PN Junction in Thermal Equilibrium (No Applied Electric Field) Diffusion Forces = E Field Forces Space Charge Region metallurgical junction p - + + + + n E field Diffusion force on holes E field force on holes Diffusion force on electrons E field force on electrons Definition of Electric Potential Difference (Volts) d Positive test charge, +q0 E field x=a x=b Work (energy) per test charge required to move a positive test charge, +q, a distance x=d against an electric field, DV = (Vb - Va) = Wab/q0 = E(b - a) = Ed [volts or Joules/coulomb] PN Junction in Thermal Equilibrium Electric Field metallurgical junction Space Charge Region p E=0 ----------------------------------------- n +++++++++ +++++++++ +++++++++ +++++++++ +++++++++ E=0 Internal E field direction E - xp x=0 + xn PN Junction in Thermal Equilibrium Built-in Potential, Vbi metallurgical junction Space Charge Region p E=0 ----------------------------------------- n +++++++++ +++++++++ +++++++++ +++++++++ +++++++++ E=0 Internal E field direction Positive test charge, +q0 V DV = Vbi - xp x=0 + xn Conduction and Valance Band Diagram for PN Junction in Thermal Equilibrium Built-in Potential, Vbi Ec eVbi Ec Ev Ev p region space charge region - xp x=0 n region + xn Conduction Band Diagram for PN Junction in Thermal Equilibrium Electron Energy Ec ------------- xp p region x=0 space charge region + xn eVbi Ec n region Work or Energy is required to move electrons from n region to p region (going uphill) Applying a Voltage Across a PN Junction Non-Equilibrium Condition (external voltage applied) Reverse Bias Shown Increased Space Charge Region metallurgical junction p Forward Bias Reverse Bias ------ ++ ++ ++ E field ++ ++ n + E applied Vapplied - + • Eapplied is created by bias voltage source Vapplied. • E field exists in p-region and n-region. • Space Charge Region width changes. • Vtotal = Vbi + Vapplied Reverse Bias PN Junction Non-Equilibrium Condition (external voltage applied) Increased Space Charge Region metallurgical junction p ------ ++ ++ ++ E field ++ ++ Ireverse n ER + VR • ER is created by reverse bias voltage source VR. • ER is in same direction as internal E field. • Space Charge Region width increases. • Vtotal = Vbi + VR • Ireverse is created from diffusion currents in the space charge region Conduction and Valance Band Diagram for PN Junction Reverse Bias Voltage Applied Vtotal = Vbi + VR Ec eVbi + eVR Ec space charge region Ev p region n region Ev - xp x=0 + xn Forward Bias PN Junction (Diode) Non-Equilibrium Condition metallurgical junction Space Charge Region n p E field IForward E applied - + Va • Eapplied is created by voltage source Va. • Eapplied must be greater than internal E field for IForwad to exist. • When Eapplied = E field, Va is called the “turn on” voltage. Forward Bias PN Junction (Applied Electric Field > Internal Electric Field) Diffusion Forces > E Field Forces Space Charge Region metallurgical junction - p + + + n Applied E field E field Diffusion force on holes Net E field force on holes Diffusion force on electrons Net E field force on electrons Forward Bias PN Junction Diffusion Forces > E Field Forces Creates Hole and Electron Injection in Space Charge Region Hole Injection across Space charge region from Diffusion force p n Electron Injection across Space charge region from Diffusion force Applied E field E field Diffusion force on holes Net E field force on holes Diffusion force on electrons Net E field force on electrons Forward Bias PN Junction Diffusion Forces > E Field Forces Creates Hole and Electron Injection in Space Charge Region Total Current density Current density Jtotal Hole Injection across Space charge region from Diffusion force Jp|inj p n Jtotal = Jp|inj + Jn|inj Electron Injection across Space charge region from Diffusion force Jn|inj Forward Bias PN Junction Electron and Hole Current Components hole injection current Total Current density p n hole drift current electron drift current Jp|drf electron diffusion current Jn|dif Jp|inj Current density Jtotal Jn|drf electron injection current Jn|inj hole diffusion current Jp|dif Jtotal Forward Bias PN Junction Electron and Hole Current Components Current Jp|inj density p n Jp|drf Jn|drf Jn|dif Jn|inj Jp|dif p-region: Jtotal = Jp|drf + Jn|dif n-region: Jtotal = Jn|drf + Jp|dif space charge region: Jtotal = Jn|inj + Jp|inj Ideal PN Junction Current-Voltage Relationship Jtotal turn on voltage Va JS JS = Reverse Bias Current Density Va = Applied Voltage Jtotal = JS[exp(eVa/(kT) - 1] Key Concepts of PN Junction • Thermal Equalibrium (no voltage source applied) • Internal E field created by diffusion currents • Built in potential, Vbi, exists • Space charge region created • E field is zero outside of space charge region • No current flow • Forward Bias Applied • Hole and electron injection in space charge region • Total current density is constant through out semiconductor • Diffusion, injection, and drift currents exist • E field is not zero outside of space charge region • Reverse Bias Applied • A constant reverse bias current exists for large applied voltages due to diffusion currents PN Junction Hole and Electron Injection Reversible Process Forward biased voltage applied to a PN junction creates hole and electron injection carriers within the space charge region. External photon energy absorbed in space charge region creates hole and electron injection carriers that are swept out by the internal E field creating a voltage potential. PN Junction Solar Cell Operation Photon Step 1 Space Charge Region hn > Eg p + + + + + E field eeeee- n • Photons create hole-electron pairs in space charge region • Created hole-electron pairs swepted out by internal E field PN Junction Solar Cell Operation Photon Step 2 Space Charge Region hn > Eg p + + + + + E field IL E injected eeeee- n • Created hole-electron pairs are swept out by the E field. • creates excess holes in p-region • creates excess electrons in n-region • Einjected is created by excess holes and electrons • Photocurrent, IL, is in reverse bias direction PN Junction Solar Cell Operation Photon Step 3 Space Charge Region hn > Eg p IForwad + + + + + E field eeeee- IL E injected Icell n Resistor + Vcell • Attaching a resistive load with wires to the PN Junction allows current flow to/from p-n regions • Photocurrent, IL, is in reverse bias direction • Iforwad is created by Einjected • Icell = IL - Iforward PN Junction Solar Cell Operation Photon Step 3 Space Charge Region hn > Eg p IForwad + + + + + E field eeeee- IL E injected Icell n Resistor + Vcell heat • Icell = IL - Iforward • Icell = IL - IS[exp(eVcell/(kT) -1] • Icell is always in reverse bias direction Typical Silicon Solar Cell Design Photons Protective High Transmission Layer P-type Doping Wires N-type Silicon Wafer 4-6 inches To load • Photons transmit through thin protective layer and thin P-type doped layer and create hole-electron pairs in space charge region • Typical Silicon Single Cell Voltage Output = ~ 0.5 volts 0.6 mm Silicon Solar Cell 6 Volt Panel Series-Parallel Design 12 cells in series = 6 volts 6 volts + p to n connection External Factors Influencing Solar Cell Effeciency • Photon transmission, reflection, and absorption of protective layer • Maximum transmission desired • Minimum reflection and absorption desired • Polarization of protective layer • Minimum polarized transmission desired • Photon Intensity • Increased intensity (more photons) increases cell current, Icell • Cell voltage, Vcell, increases only slightly • Larger cell area produces larger current (more incident photons) • Theoretical Silicon Solar Cell Maximum Efficiency = 28% • Typical Silicon Solar Cell Efficiency = 10-15%