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SiT5001
1-80 MHz MEMS TCXO and VCTCXO
The Smart Timing Choice
The Smart Timing Choice
Features
Applications

Any frequency between 1 and 80 MHz accurate to 6 decimal places

WiFi, 3G, LTE, SDI, Ethernet, SONET, DSL

100% pin-to-pin drop-in replacement to quartz-based (VC)TCXO

Telecom, networking, smart meter, wireless, test instrumentation

Frequency stability as low as ±5 ppm. Contact SiTime for tighter
stability options

Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz)

Voltage control option with pull range from ±12.5 ppm to ±50 ppm

LVCMOS compatible output with SoftEdge™ option for EMI reduction

Voltage control, standby, output enable or no connect modes

Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm

Outstanding silicon reliability of 2 FIT, 10 times better than quartz

Pb-free, RoHs and REACH compliant
Electrical Characteristics
Parameter
Output Frequency Range
Initial Tolerance
Symbol
Min.
Typ.
Max.
Unit
f
1
–
80
MHz
Condition
F_init
-1
–
1
ppm
At 25°C after two reflows
Stability Over Temperature
F_stab
-5
–
+5
ppm
Over operating temperature range at rated nominal power
supply voltage and load. (see ordering codes on page 6)
Supply Voltage
F_vdd
–
50
–
ppb
±10% Vdd (±5% for Vdd = 1.8V)
15 pF ±10% of load
Contact SiTime for tighter stability options.
Output Load
F_load
–
0.1
–
ppm
First year Aging
F_aging
-2.5
–
+2.5
ppm
25°C
-4.0
–
+4.0
ppm
25°C
10-year Aging
Operating Temperature Range
Supply Voltage
Pull Range
T_use
Vdd
-20
–
+70
°C
Extended Commercial
-40
–
+85
°C
Industrial
1.71
1.8
1.89
V
Contact SiTime for any other supply voltage options.
2.25
2.5
2.75
V
2.52
2.8
3.08
V
2.70
3.0
3.3
V
2.97
3.3
3.63
V
PR
±12.5, ±25, ±50
ppm
Upper Control Voltage
VC_U
Vdd-0.1
–
–
V
Control Voltage Range
VC_L
–
–
0.1
V
Control Voltage Input Impedance
Z_vc
100
–
–
k
Frequency Change Polarity
Control Voltage -3dB Bandwidth
Current Consumption
OE Disable Current
Standby Current
Duty Cycle
LVCMOS Rise/Fall Time
–
Positive slope
All Vdds. Voltage at which maximum deviation is guaranteed.
–
V_BW
–
–
8
kHz
Idd
–
31
33
mA
No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V.
–
29
31
mA
No load condition, f = 20 MHz, Vdd = 1.8V.
–
–
31
mA
Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled Down
–
–
30
mA
Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down
I_std
–
–
70
µA
Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled Down.
–
–
10
µA
Vdd = 1.8V. ST = GND, output is Weakly Pulled Down.
DC
45
–
55
%
All Vdds
Tr, Tf
–
1.5
2
ns
LVCMOS option. Default rise/fall time, All Vdds, 10% - 90% Vdd.
I_OD
SoftEdge™ Rise/Fall Time
SoftEdge™ Rise/Fall Time Table
ns
SoftEdge™ option. Frequency and supply voltage dependent.
Output Voltage High
VOH
90%
–
–
Vdd
Output Voltage Low
VOL
–
–
10%
Vdd
Input Voltage High
VIH
70%
–
–
Vdd
Pin 1, OE or ST
Input Voltage Low
VIL
–
–
30%
Vdd
Pin 1, OE or ST
Input Pull-up Impedance
Z_in
–
100
250
k
SiTime Corporation
Rev. 1.0
990 Almanor Avenue
Sunnyvale, CA 94085
OH = -7 mA, IOL = 7 mA, (Vdd = 3.3V, 3.0V)
IOH = -4 mA, IOL = 4 mA, (Vdd = 2.8V, 2.5V)
IOH = -2 mA, IOL = 2 mA, (Vdd = 1.8V)
(408) 328-4400
www.sitime.com
Revised November 12, 2015
SiT5001
1-80 MHz MEMS TCXO and VCTCXO
The Smart Timing Choice
The Smart Timing Choice
Electrical Characteristics (continued)
Parameter
Startup Time
OE Enable/Disable Time
Resume Time
Symbol
Min.
Typ.
Max.
Unit
Condition
T_start
–
–
10
ms
Measured from the time Vdd reaches its rated minimum value
T_oe
–
–
150
ns
f = 80 MHz. For other frequencies, T_oe = 100 ns + 3 cycles
T_resume
–
6
10
ms
Measured from the time ST pin crosses 50% threshold
T_jitt
–
1.7
2
ps
f = 10 MHz, Vdd = 2.5V, 2.8V or 3.3V
–
1.7
2
ps
f = 10 MHz, Vdd = 1.8V
–
0.5
1
ps
f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz, All Vdds
RMS Period Jitter
RMS Phase Jitter (random)
T_phj
Note:
1. All electrical specifications in the above table are measured with 15pF output load, Contact SiTime for higher drive options.
Pin Configuration
Pin
Symbol
Functionality
V control
1
[2]
Output
Enable
H or Open : specified frequency output
L: output is high impedance. Only output driver is disabled.
Standby
H or Open[2]: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
VC/OE/ST/NC
NC
2
Top View
Voltage control
VC/OE/ST
1
4
VDD
GND
2
3
OUT
No connect (input receiver off)
GND
Power
Electrical and case ground
3
CLK
Output
Oscillator output
4
VDD
Power
Power supply voltage
Note:
2. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment when the device operates in OE/ST mode.
Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Min.
Max.
Unit
Storage Temperature
Parameter
-65
150
°C
VDD
-0.5
4
V
Electrostatic Discharge
–
2000
V
Soldering Temperature (follow standard Pb free soldering guidelines)
–
260
°C
Environmental Compliance
Parameter
Condition/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002
Mechanical Vibration
MIL-STD-883F, Method 2007
Temperature Cycle
JESD22, Method A104
Solderability
MIL-STD-883F, Method 2003
Moisture Sensitivity Level
MSL1 @ 260°C
Rev. 1.0
Page 2 of 7
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SiT5001
1-80 MHz MEMS TCXO and VCTCXO
The Smart Timing Choice
The Smart Timing Choice
Timing Diagram
90% Vdd, 2.5/2,8/3.3V devices
Vdd
95% Vdd, 1.8V devices
Vdd
Pin 4 Voltage
ST Voltage
50% Vdd
T_resume
T_start
CLK Output
CLK Output
T_start: Time to start from power-off
T_resume: Time to resume from ST
(ST/OE Mode)
(ST Mode Only)
Phase Noise Plot
Phase Noise, 10M Hz carrier, 3.3V, LVCM OS output, TCXO
-100
Phase Noise (dBc/Hz)
-110
Integrated random phase jitter (RM S, 12kHz-5M Hz): 0.52ps
-120
-130
-140
-150
-160
-170 3
10
Rev. 1.0
4
10
5
10
Frequency O ffset (Hz)
Page 3 of 7
6
10
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SiT5001
1-80 MHz MEMS TCXO and VCTCXO
The Smart Timing Choice
The Smart Timing Choice
SoftEdge™ Option
The SoftEdge™ output is available as a standard option for the SiT500x family of MEMS (VC)TCXOs. It is typically used for EMI
reduction similar to that of the clipped sinewave output common to many quartz based TCXOs.
In the SoftEdge™ mode, the slower rise/fall edges of the output waveform reduce the higher clock harmonics in a digital clock
signal, minimizing EMI radiation at these harmonics. The table below show the actual rise/fall time in relation to the desired
output frequency and the supply voltage with a 10 k / 10pF load. Rail-to-rail swing of the output is maintained for these
supported frequencies.
Rise/Fall Time for SoftEdge™ Option
Parameter
Symbol
Min.
Typ.
Max.
Unit
Tr, Tf
4.0
6.5
9.5
ns
1-26 MHz, 1.8V, 3.0 and 3.3V, MHz 10k and 10 pF, 20%-80% Vd
2.5
4.0
6.0
ns
1-26 MHz, 2.5V and 2.8V, MHz 10k and 10 pF, 20%-80% Vdd
1.5
3.5
5.0
ns
26-50 MHz, 1.8V, 3.0V and 3.3V, MHz 10k and 10 pF, 20%-80% Vdd
1.5
2.5
4.5
ns
26-50 MHz, 2.5V and 2.8V, MHz 10k and 10 pF, 20%-80% Vdd
Rise/Fall Time
Condition
SoftEdge™ Waveform Examples and Corresponding Harmonics Reduction
Figures below illustrate the harmonic power reduction as the rise/fall times are slowed from the standard squarewave output to
that of the SoftEdge™ output. In general, the 1.8V device shows the lowest harmonics and provides best EMI performance
comparing to devices with higher operating voltages.
Odd Harmonic Power Comparison for LVCMOS and SoftEdge™ Outputs,
VDD = 3.3V
LVCMOS and SoftEdge™ Outputs,
VDD = 3.3V
3.5
20
SoftEdge
LVCMOS
3
Harmonic Power (dbm)
2.5
Amplitude (V)
SoftEdge
LVCMOS
10
2
1.5
1
-10dBm
0
-10
-20
-24.4dbm
-30
0.5
0
-40
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0
2
4
6
8
10
12
14
16
18
20
Harmonic Number
Time (ns)
LVCMOS and SoftEdge Outputs,
VDD = 1.8V
SoftEdge
LVCMOS
20
Odd Harmonic Power Comparison for LVCMOS and SoftEdge Outputs,
VDD = 1.8V
SoftEdge
LVCMOS
Amplitude ( 0.5V/Div )
Harmonic Power (dbm)
10
0
-17 dBm
-10
-20
-22
dBm
-30
-40
Time ( 20ns/Div )
0
2
4
6
8
10
12
14
16
18
20
Harmonic Number
LVCMOS and SoftEdge Outputs,
VDD = 2.5V
20
Odd Harmonic Power Comparison for LVCMOS and SoftEdge Outputs,
VDD = 2.5V
SoftEdge
LVCMOS
SoftEdge
LVCMOS
Amplitude( 0.5V/Div)
Harmonic Power (dbm)
10
0
-11 dBm
-10
-20
-20 dBm
-30
-40
Time (20 ns/Div)
Rev. 1.0
0
2
4
6
8
10
12
14
16
18
20
Harmonic Number
Page 4 of 7
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SiT5001
1-80 MHz MEMS TCXO and VCTCXO
The Smart Timing Choice
The Smart Timing Choice
Dimensions and Patterns
Package Size – Dimensions (Unit: mm) [3]
Recommended Land Pattern (Unit: mm) [4]
2.7 x 2.4 x 0.75 mm (100% compatible with 2.5 x 2. 0 mm footprint)
YXXXX
3.2 x 2.5 x 0.75 mm
3.2 ± 0.05
#3
1.9
0.9
#4
#2
#1
0.9
0.75 ± 0.05
#2
1.2
0.7
YXXXX
#1
2.2
2.1
#3
2.5 ± 0.05
#4
1.4
5.0 x 3.2 x 0.75 mm
2.54
5.0 ± 0.05
#2
#1
2.2
1.6
#2
0.75 ± 0.05
#1
#4
1.1
YXXXX
#3
0.8
#3
3.2 ± 0.05
#4
2.39
1.15
1.5
7.0 x 5.0 x 0.90 mm
0.90 ± 0.10
2.0
1.1
3.81
2.6
5.0 ± 0.05
YXXXX
5.08
5.08
7.0 ± 0.05
1.4
2.2
Notes:
3. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
4. A capacitor of value 0.1 F between Vdd and GND is recommended.
Rev. 1.0
Page 5 of 7
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SiT5001
1-80 MHz MEMS TCXO and VCTCXO
The Smart Timing Choice
The Smart Timing Choice
Ordering Information
The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number
Generator.
SiT5001AC -2E-18VQ-1 9 .200000T
Packaging
“T”: Tape & Reel, 3K reel
“Y”: Tape & Reel, 1K reel
Blank for Bulk
Part Family
SiT5001
Revision Letter
Frequency
1.000000 to 80.000000 MHz
“A” is the revision
“0” for fixed frequency
(Pin1 = “E”, “S” or “N” options)
Temperature Range
“C” Commercial, -20 to 70ºC
“I” Industrial, -40 to 85ºC
Pull Range Options
(Pin1 = “V” option only)
Output Waveform
“Q” for ±12.5 ppm
“M” for ±25 ppm
“B” for ±50 ppm
“-“ Default
“C” SoftEdge™ Option[5]
Feature Pin (pin 1)
Package Size
“G”
“2”
“3”
“8”
“V” for Voltage Control
“E” for Output Enable
“S” for Standby
“N” for No Connect
2.5 x 2.0 mm
3.2 x 2.5 mm
5.0 x 3.2 mm
7.0 x 5.0 mm
Supply Voltage
“18” for 1.8 V ±5%
“25” for 2.5 V ±10%
“28” for 2.8 V ±10%
“30” for 3.0 V ±10%
“33” for 3.3 V ±10%
Frequency Stability[6]
“E” for ±5 ppm
Notes:
5. SiTime’s SoftEdge™ output waveform with 6 ns rise/fall time reduces EMI and is similar to clipped sine wave in functionality.
6. Contact SiTime for tighter stability options.
Rev. 1.0
Page 6 of 7
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SiT5001
1-80 MHz MEMS TCXO and VCTCXO
The Smart Timing Choice
The Smart Timing Choice
Additional Information
Description
Download Link
Manufacturing
Notes
Document
Tape & Reel dimension, reflow
profile and other manufacturing related info
http://www.sitime.com/component/docman/doc_download/85-manufacturing-notes-for-sitime-oscillators
Qualification
Reports
RoHS report, reliability
reports, composition reports
http://www.sitime.com/support/quality-and-reliability
Performance
Reports
Additional performance data
such as phase noise, current
consumption and jitter for
selected frequencies
http://www.sitime.com/support/performance-measurement-report
Termination
Techniques
Termination design recommendations
http://www.sitime.com/support/application-notes
Layout Techniques
Layout recommendations
http://www.sitime.com/support/application-notes
Revision History
Version
Release Date
1.0
11/12/15
Change Summary
Final production release
• Revised initial tolerance, stability over temperature and first/10 year aging values in the electrical
characteristics table
• Revised frequency stability option
© SiTime Corporation 2015. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a
Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)
unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES
OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products
does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the
sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly
prohibited.
Rev. 1.0
Page 7 of 7
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The Smart Timing Choice
The Smart Timing Choice
Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
SiTime Corporation
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
The Smart Timing Choice
The Smart Timing Choice
Silicon MEMS Outperforms Quartz
SiTime Corporation
Silicon MEMS Outperforms Quartz Rev. 1.2
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised November 13, 2015
Silicon MEMS Outperforms Quartz
The Smart Timing Choice
The Smart Timing Choice
Best Reliability
Best Electro Magnetic Susceptibility (EMS)
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most reliable
products. Figure 1 shows a comparison with quartz
technology.
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than quartz
oscillators as shown in Figure 3.
Why is SiTime Best in Class:
• SiTime’s MEMS resonators are vacuum sealed using an
advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging and reliability
• World-class MEMS and CMOS design expertise
Why is SiTime Best in Class:
• Internal differential architecture for best common mode
noise rejection
• Electrostatically driven MEMS resonator is more immune
to EMS
SiTime vs Quartz
Electro Magnetic Susceptibility (EMS)
Reliability (Million Hours)
- 30
IDT
Epson
1,140
38
28
Average Spurs (dB)
- 39
SiTime
- 40
- 40
- 42
- 43
- 45
- 50
- 60
SiTime
54X Better
- 70
- 73
- 80
- 90
Kyocera
Figure 1. Reliability Comparison[1]
Epson
TXC
CW
SiLabs
SiTime
Figure 3. Electro Magnetic Susceptibility (EMS)[3]
Best Aging
Best Power Supply Noise Rejection
Unlike quartz, MEMS oscillators have excellent long term
aging performance which is why every new SiTime product
specifies 10-year aging. A comparison is shown in Figure 2.
SiTime’s MEMS oscillators are more resilient against noise on
the power supply. A comparison is shown in Figure 4.
• SiTime’s MEMS resonators are vacuum sealed using an
advanced EpiSeal process, which eliminates foreign particles and improves long term aging and reliability
• Inherently better immunity of electrostatically driven
MEMS resonator
SiTime MEMS vs. Quartz Aging
10
SiTime MEMS Oscillator
Quartz Oscillator
8.0
Aging (±PPM)
8
SiTime
2X Better
6
4
2
0
3.0
3.5
1.5
1-Year
10-Year
Figure 2. Aging Comparison[2]
Silicon MEMS Outperforms Quartz Rev. 1.2
Why is SiTime Best in Class:
• On-chip regulators and internal differential architecture for
common mode noise rejection
• Best analog CMOS design expertise
Additive Integrated Phase Jitter per mVp-p
Injected Noise (ps/mv)
Why is SiTime Best in Class:
Power Supply Noise Rejection
SiTIme
5.0
NDK
Epson
Kyocera
4.0
3.0
2.0
SiTime SiTime
3X Better
1.0
0.0
10
100
1,000
Power Supply Noise Frequency (kHz)
10,000
Figure 4. Power Supply Noise Rejection[4]
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Silicon MEMS Outperforms Quartz
The Smart Timing Choice
The Smart Timing Choice
Best Vibration Robustness
Best Shock Robustness
High-vibration environments are all around us. All electronics,
from handheld devices to enterprise servers and storage
systems are subject to vibration. Figure 5 shows a comparison
of vibration robustness.
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
Why is SiTime Best in Class:
Why is SiTime Best in Class:
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust
design
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust
design
Vibration Sensitivity (ppb/g)
TXC
Epson
Connor Winfield
Kyocera
SiLabs
100.00
10.00
1.00
SiTime
Up to 30x
Better
0.10
10
100
Vibration Frequency (Hz)
Figure 5. Vibration Robustness[5]
1000
Peak Frequency Deviation (PPM)
Vibration Sensitivity vs. Frequency
SiTime
16
14
Differential XO Shock Robustness - 500 g
14.3
12.6
12
10
8
SiTime
Up to 25x
Better
6
3.9
4
2.9
2.5
2
0.6
0
Kyocera
Epson
TXC
CW
SiLabs
SiTime
Figure 6. Shock Robustness[6]
Notes:
1. Data Source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
• Field strength: 3V/m
• Radiated signal modulation: AM 1 kHz at 80% depth
• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
• Antenna polarization: Vertical
• DUT position: Center aligned to antenna
Devices used in this test:
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz
5. Devices used in this test: same as EMS test stated in Note 3.
6. Test conditions for shock test:
• MIL-STD-883F Method 2002
• Condition A: half sine wave shock pulse, 500-g, 1ms
• Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test: same as EMS test stated in Note 3
7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact [email protected].
Silicon MEMS Outperforms Quartz Rev. 1.2
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Document Feedback Form
The Smart Timing Choice
The Smart Timing Choice
SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form
below to [email protected].
1. Does the Electrical Characteristics table provide complete information?
Yes
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If No, what parameters are missing?
_________________________________________________________________________________________________
2. Is the organization of this document easy to follow?
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If “No,” please suggest improvements that we can make:
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