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Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems 4.2±0.3 2.3 1.9 4.5±0.3 4.8±0.3 2.4 2.4 Not soldered ø3.5±0.2 Features High-power output, high-efficiency : PO = 3.5 mW (typ.) 2.8 1.8 1.0 Suited for use with silicon photodetectors 12.8 min. 10.0 min. Infrared light emission close to monochromatic light : λP = 950 nm (typ.) High-speed modulation capability 2-0.98±0.2 2-0.45±0.15 0.45±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter * Symbol Ratings Unit Power dissipation PD 75 mW Forward current (DC) IF 50 mA Pulse forward current IFP * 1 A Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 2.54 1.2 R1.75 1 2 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ Unit Radiant power PO IF = 50mA 3.5 mW Peak emission wavelength λP IF = 50mA 950 nm Spectral half band width ∆λ IF = 50mA 50 Forward voltage (DC) VF IF = 50mA Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz 50 pF Half-power angle θ The angle in which radiant intencity is 50% 35 deg. IF — Ta 1.8 max IFP — Duty cycle 10 µA 80 Ta = 25˚C 10 2 Ta = 25˚C 70 30 20 10 10 IF (mA) 40 1 Forward current IFP (A) 50 Pulse forward current IF (mA) V IF — VF 60 Allowable forward current nm 1.5 10 –1 60 50 40 30 20 10 –2 10 0 – 25 0 20 40 60 80 Ambient temperature Ta (˚C ) 100 10 –3 10 –2 10 –1 1 Duty cycle (%) 10 10 2 0 0 0.4 0.8 1.2 1.6 Forward voltage VF (V) 1 Infrared Light Emitting Diodes LN55 ∆PO — IF IFP — VF tw = 10µs Duty Cycle = 0.1% Ta = 25˚C Ta = 25˚C 10 2 10 1 Relative radiant power ∆PO 100 10 3 10 –1 ∆PO — IFP 10 4 120 Relative radiant power ∆PO Pulse forward current IFP (mA) 10 4 80 60 40 (1) 10 3 (2) (3) (4) (5) 10 2 tw = 10µs (1) f = 100Hz (2) f = 21kHz (3) f = 42kHz (4) f = 60kHz (5) DC Ta = 25˚C 10 20 0 1 2 3 Forward voltage 4 0 5 0 10 VF (V) 20 30 Forward current 40 50 1 10 60 IF (mA) 10 2 ∆PO — Ta VF — Ta 1000 10mA 0.8 0.4 0 – 40 0 40 80 Ambient temperature 120 Ta (˚C ) Spectral characteristics 10 2 10 1 – 40 0 40 Ambient temperature 80 980 960 940 920 900 – 40 120 Ta (˚C ) 10˚ 0 40 80 Ambient temperature Directivity characteristics 0˚ 100 IF = 50mA Peak emission wavelength λP (nm) IF = 50mA Relative radiant power ∆PO Forward voltage VF (V) IF = 50mA 1.2 Frequency characteristics 20˚ 10 2 Ta = 25˚C 60 60 50 40 40 30 20 20 30˚ 40˚ 50˚ 60˚ 70˚ 10 Modulation output 80 70 Relative radiant intensity(%) Relative radiant intensity (%) 90 120 Ta (˚C ) 100 80 10 4 IFP (mA) λP — Ta 10 3 1.6 10 3 Pulse forward current 1 10 –1 80˚ 90˚ 0 860 900 940 980 Wavelength 2 1020 1060 1100 λ (nm) 10 –2 1 10 Frequency 10 2 f (kHz) 10 3 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and afterunpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR