Download gXSB0015 B E-band X6 MMIC multiplier 71 – 86 GHz

gXSB0015 B
E-band X6 MMIC multiplier
71 – 86 GHz
Doc. Rev. A01-16
FEATURES
TYPICAL APPLICATIONS
•
Full E-band coverage, 71 – 86 GHz
•
E-band point-to-point radio
•
Output power, 7 dBm typ.
•
Active imaging and sensors
•
Harmonic isolation, 10 dBc typ.
•
Automotive radar
•
Test instrumentation
DESCRIPTION
The gXSB0015 GaAs pHEMT MMIC is an
efficient X6 E-band multiplier ideal for
point to point radio applications. The chip
has an integrated output buffer. At the
recommended drive level of 10 dBm the
output power is typically 7 dBm with better
than 10 dBc harmonic isolation and
300 mW power dissipation.
Figure 1. Circuit functional diagram.
For more information, prices or to place orders please contact [email protected]
Data and specification are subject to change without notice © 2016 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030
http://www.gotmic.se/
gXSB0015 B
E-band X6 MMIC multiplier
71 – 86 GHz
Doc. Rev. A01-16
ELECTRICAL PERFORMANCE
Table 1. Electrical performance TA=25C
Parameter
Min
Output frequency
Input frequency
Multiplication factor
Output power
Output power flatness
Recommended input drive power
Harmonic isolation (relative to X6 output)
Output return loss
Input return loss
Power dissipation (signal off)
Power dissipation (signal on)
71
11.8
5
Typ
Max
Unit
86
14.4
GHz
GHz
350
dBm
dBpp
dBm
dBc
dB
dB
mW
mW
6
7
5
10
10
10
5
250
235
300
MEASURED PERFORMANCE
Measurements have been performed on-wafer at room temperature with typical bias settings and
an input drive power if not specified otherwise.
Table 2. Test conditions
Parameter
Setting
Input drive power
Temperature
10 dBm
25°C
For more information, prices or to place orders please contact [email protected]
Data and specification are subject to change without notice © 2016 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030
http://www.gotmic.se/
gXSB0015 B
E-band X6 MMIC multiplier
71 – 86 GHz
20
18
16
14
12
10
8
6
4
2
0
65
60
X5
50
Isolation [dBc]
POUT [dBm]
Doc. Rev. A01-16
X7
40
30
20
10
70
75
80
X6 Freq [GHz]
85
0
65
90
70
75
80
X6 Freq [GHz]
85
90
20
20
15
15
POUT [dBm]
POUT [dBm]
Figure 2. Output power vs X6 output frequency (left). Harmonic isolation vs X6 output frequency (right).
10
5
0
-5
-10
0
10
5
0
-5
2
4
-10
0
6 8 10 12 14 16
PIN [dBm]
2
4
6 8 10 12 14 16
PIN [dBm]
60
60
50
50
X5 Isolation [dBc]
X7 Isolation [dBc]
Figure 3. Output power vs input power at 71 GHz (left). Output power vs input power at 86 GHz (right).
40
30
20
10
0
0
2
4
6 8 10 12 14 16
PIN [dBm]
40
30
20
10
0
0
2
4
6 8 10 12 14 16
PIN [dBm]
Figure 4. X7 isolation vs input power at 71 GHz (left). X5 isolation vs input power at 86 GHz (right).
For more information, prices or to place orders please contact [email protected]
Data and specification are subject to change without notice © 2016 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030
http://www.gotmic.se/
gXSB0015 B
E-band X6 MMIC multiplier
71 – 86 GHz
0
0
-5
-5
-10
-10
RL [dB]
RL [dB]
Doc. Rev. A01-16
-15
-20
-25
-30
10
-15
-20
-25
11
12
13
Freq [GHz]
14
15
-30
65
70
75
80
Freq [GHz]
PDC [mW]
Figure 5. Input return loss (left). Output return loss (right).
800
700
600
500
400
300
200
100
0
65
70
75
80
X6 Freq [GHz]
85
90
Figure 6. Power dissipation vs X6 output frequency.
For more information, prices or to place orders please contact [email protected]
Data and specification are subject to change without notice © 2016 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030
http://www.gotmic.se/
85
90
gXSB0015 B
E-band X6 MMIC multiplier
71 – 86 GHz
Doc. Rev. A01-16
RECOMMENDED OPERATING CONDITIONS
Apply the gate (VG_…) supplies first followed by the drain (VD_…) supplies. Gate voltages are
adjusted within the typical min/max range to obtain the specified drain currents. The drain
currents are stated with all input signals off.
Table 3. Electrical settings, P1 pads
Connector P1
VG_X3
VG_X2
VD_X
GND
NC
VG_AMP
VD_AMP
Pad No.
1
2
3
4
5
6
7
Bias settings (V / mA)
Function
Min
Typ
Max
-0.6
-1.0
3.2
-0.4
-0.8
3.3 / 31(1)
-0.2
-0.6
3.4
-0.45
3.2
-0.25
3.3 / 40
-0.05
3.4
Input
Input
Input
Ground
NC
Input
Input
Table 4. Electrical settings, P2 pads
Connector P2
GND
RF_OUT
GND
Pad No.
1
2
3
Settings
50 Ohm, open-circuit at DC
Function
Ground
Output
Ground
Table 5. Electrical settings, P3 pads
Connector P3
GND
RF_IN
GND
1
Pad No.
1
2
3
Settings
50 Ohm, open-circuit at DC
Adjust VG_X3 at 25 mA and VG_X2 at 6 mA, total current 31 mA.
For more information, prices or to place orders please contact [email protected]
Data and specification are subject to change without notice © 2016 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030
http://www.gotmic.se/
Function
Ground
Input
Ground
gXSB0015 B
E-band X6 MMIC multiplier
71 – 86 GHz
Doc. Rev. A01-16
ABSOLUTE MAXIMUM RATINGS
Table 6. Absolute Maximum Ratings
Gate supply voltage
Drain supply voltage
Gate-drain breakdown
ID_X
ID_AMP
Input level
Operating temperature
Storage temperature
-2 to + 0.7 V
4.5 V
8V
60 mA
80 mA
+ 15 dBm
-40 to + 85 C
-65 to +150 C
OUTLINE DRAWING
Dimensions are in µm. Substrate thickness is 50 µm (GaAs). Drawing is also available in dxf-file
format on the web.
Figure 7. Outline drawing, dimensions are in um.
For more information, prices or to place orders please contact [email protected]
Data and specification are subject to change without notice © 2016 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 184 030
http://www.gotmic.se/