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EE 320/320L Course Syllabus - K. W. Whites
EE 320/320L Course Syllabus - K. W. Whites

... Laboratories: Use a laboratory notebook for all of your laboratory work. Work exclusively in ink and cross out mistakes, keeping them legible. Number the front of every page in the upper right corner. The first page of the lab book is to be used as the table of contents. Pre-laboratory work is to be ...
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... Figure 6. Voltage generated as a function of displacement over a 1 MΩ load resistor. In this way the mass moves across multiple capacitances per cycle. The shape of the signal corresponds to the simulated and measured changes of capacitance versus displacement. During this test the polarisation volt ...
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... Once they are injected into the oxide, they become part of its trapped charge. As it is already known, this would alter the device’s threshold voltage and may render the device totally useless with time. Also, since the injection occurs near the drain side, where the electrons would have attained th ...
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... gate signal turns on the Q1 and turns off the Q2. Therefore, the difference between input and output voltage (Vin-Vo) is applied across the inductor. The inductor current increases linearly. The energy is transferred from the input source to the inductor. When Q1 turns off and Q2 turns on, the volta ...
BP5728
BP5728

... illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising fr ...
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... from the freewheeling circuit to the transistor being turned on (dv/dt > 5 kV/µs), can result in the anti-parallel transistor being switched into the conductive state, as shown in Figure 5. Figure 5 shows the electrical equivalent circuit for an IGBT in its simplest form, with the input capacities a ...
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... The diffusion of carriers does not happen indefinitely, however, because charges build up on either side of the junction and create an electric field The electric field creates a diode that promotes charge flow, known as drift current, that opposes and eventually balances out the diffusion of electr ...
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... exposing it to an oxidizing atmosphere at high temperatures. This is the normal oxidation process. The emission of interstitials occurs at the interface; the interstitials diffuse into the bulk; the supersaturation decreases with the distance from the surface. There is no easy nucleation for an inte ...
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P–n diode



This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.
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