MAX16936 36V, 220kHz to 2.2MHz Step-Down Converter with 28µA Quiescent Current General Description
... designed to operate with an external Schottky diode for better efficiency. The low-side MOSFET enables fixed-frequency forced-PWM (FPWM) operation under light-load applications. The device operates with input voltages from 3.5V to 36V, while using only 28FA quiescent current at no load. The switchin ...
... designed to operate with an external Schottky diode for better efficiency. The low-side MOSFET enables fixed-frequency forced-PWM (FPWM) operation under light-load applications. The device operates with input voltages from 3.5V to 36V, while using only 28FA quiescent current at no load. The switchin ...
KSC5026M NPN Silicon Transistor KSC5026M — NPN Silicon T ransistor
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
FSQ0365, FSQ0265, FSQ0165, FSQ321 Green Mode Fairchild Power Switch (FPS™)
... Comparing the feedback voltage with the voltage across the RSENSE resistor makes it possible to control the switching duty cycle. When the reference pin voltage of the shunt regulator exceeds the internal reference voltage of 2.5V, the opto-coupler LED current increases, pulling down the feedback vo ...
... Comparing the feedback voltage with the voltage across the RSENSE resistor makes it possible to control the switching duty cycle. When the reference pin voltage of the shunt regulator exceeds the internal reference voltage of 2.5V, the opto-coupler LED current increases, pulling down the feedback vo ...
Datasheet - Mouser Electronics
... technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a s ...
... technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a s ...
LT1571 - Constant-Current/Constant-Voltage
... below 7V (typical). Note that there is an internal parasitic diode from SW pin to VCC pin. Do not force VCC below SW by more than 0.7V with battery present. All VCC pins should be shorted together close to the pins. BOOST: This pin is used to bootstrap and drive the NPN switch to a low on-voltage fo ...
... below 7V (typical). Note that there is an internal parasitic diode from SW pin to VCC pin. Do not force VCC below SW by more than 0.7V with battery present. All VCC pins should be shorted together close to the pins. BOOST: This pin is used to bootstrap and drive the NPN switch to a low on-voltage fo ...
3. Sample and Hold with OPA615
... 3. Sample and Hold with OPA615 It was observed that the droop rate at the bottom of the sine wave was approximately ten-fold compared with the droop rate observed at the top of the sine wave. This is mainly due to the 2 reasons. First, the polarity of the input bias current of the OTA either reinfo ...
... 3. Sample and Hold with OPA615 It was observed that the droop rate at the bottom of the sine wave was approximately ten-fold compared with the droop rate observed at the top of the sine wave. This is mainly due to the 2 reasons. First, the polarity of the input bias current of the OTA either reinfo ...
TL082
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
NCP1027 - High-Voltage Switcher for Medium Power
... switching and waits a full timer period before attempting to restart. If the default is gone, the controller resumes operation. If the default is still there, e.g. a broken optocoupler, the controller protects the load through a safe burst mode. Brown−Out Input: A fraction of the input voltage appea ...
... switching and waits a full timer period before attempting to restart. If the default is gone, the controller resumes operation. If the default is still there, e.g. a broken optocoupler, the controller protects the load through a safe burst mode. Brown−Out Input: A fraction of the input voltage appea ...
ADT7488A - SST Digital Temperature Sensor and Voltage Monitor
... the negative temperature coefficient of a diode by measuring the base-emitter voltage (VBE) of a transistor operated at constant current. Unfortunately, this technique requires calibration to null the effect of the absolute value of VBE, which varies from device to device. The technique used in the ...
... the negative temperature coefficient of a diode by measuring the base-emitter voltage (VBE) of a transistor operated at constant current. Unfortunately, this technique requires calibration to null the effect of the absolute value of VBE, which varies from device to device. The technique used in the ...
Triangular Multicarrier SPWM Technique for Nine Level
... The general structure of the MVSI is to synthesize a staircase or multilevel output sinusoidal voltage out of several levels of dc voltages and it can therefore be described as a voltage synthesizer. In conventional VSI, the maximum output voltage is determined by the blocking capability of each dev ...
... The general structure of the MVSI is to synthesize a staircase or multilevel output sinusoidal voltage out of several levels of dc voltages and it can therefore be described as a voltage synthesizer. In conventional VSI, the maximum output voltage is determined by the blocking capability of each dev ...
The Field Effect Transistor
... used as either an input or an output connection but instead it is used for grounding the substrate. It connects to the main semiconductive channel through a diode junction to the body or metal tab of the MOSFET. In discrete type MOSFETs, this substrate lead is connected internally to the source term ...
... used as either an input or an output connection but instead it is used for grounding the substrate. It connects to the main semiconductive channel through a diode junction to the body or metal tab of the MOSFET. In discrete type MOSFETs, this substrate lead is connected internally to the source term ...
MAX16935 36V, 3.5A, 2.2MHz Step-Down Converter with 28µA Quiescent Current General Description
... Switching Regulator Output. OUT also provides power to the internal circuitry when the output voltage of the converter is set between 3V to 5V during standby mode. Feedback Input. Connect an external resistive divider from OUT to FB and AGND to set the output voltage. Connect to BIAS to set the outp ...
... Switching Regulator Output. OUT also provides power to the internal circuitry when the output voltage of the converter is set between 3V to 5V during standby mode. Feedback Input. Connect an external resistive divider from OUT to FB and AGND to set the output voltage. Connect to BIAS to set the outp ...
Physics 15 B Lab 1 : Capacitance
... with distance? Does the charge density change with distance? Does is the energy stored in the capacitor change with distance? Does this violate energy ...
... with distance? Does the charge density change with distance? Does is the energy stored in the capacitor change with distance? Does this violate energy ...
AN-3002 — Low Current Input Circuit Ideas, 6N138/139 Series
... and much written about ability to be directly driven by CMOS circuits, the 6N139 can be considered for signal detection, transient detection, matrices and non-loading line receiving. Following are but a few circuit ideas to stimulate the designer’s interest. ...
... and much written about ability to be directly driven by CMOS circuits, the 6N139 can be considered for signal detection, transient detection, matrices and non-loading line receiving. Following are but a few circuit ideas to stimulate the designer’s interest. ...
Slides - Agenda INFN
... • Depleted region up to ~15 µm (relatively weak MIP signals ~1800 e) • Collection electrode: PMOS bulk strong capacitive crosstalk from PMOS transistors to detector input • Complex in-pixel electronics leads to increased detector capacitance (if in the same n-well) or to decreased electrode/pixel- ...
... • Depleted region up to ~15 µm (relatively weak MIP signals ~1800 e) • Collection electrode: PMOS bulk strong capacitive crosstalk from PMOS transistors to detector input • Complex in-pixel electronics leads to increased detector capacitance (if in the same n-well) or to decreased electrode/pixel- ...
Interface Protection for HDMI
... circuitry must provide well defined tolerances on low dropout at maximum specified current as well as accurate current limits to protect the current capacity of the connector. ...
... circuitry must provide well defined tolerances on low dropout at maximum specified current as well as accurate current limits to protect the current capacity of the connector. ...
AAT3682 数据资料DataSheet下载
... under voltage, removal and replacement of the battery under charge, or charging a partially drained battery are all possible. The AAT3682 will monitor the battery voltage and automatically resume charging in the appropriate mode based upon the measured battery cell voltage. This feature is useful fo ...
... under voltage, removal and replacement of the battery under charge, or charging a partially drained battery are all possible. The AAT3682 will monitor the battery voltage and automatically resume charging in the appropriate mode based upon the measured battery cell voltage. This feature is useful fo ...
Progress in joule-class diode laser bars and high brightness
... lateral geometries were compared: (1) W = 1200 µm and n = 6 (F = 72%) following [4,6], (2) W = 400 µm and n = 18 (F = 72%) following [5,8] and (3) W = 186 µm and n = 36 (F = 67%) following [8]. In each case, index-guiding trenches were etched on either side of each laser stripe, to stabilize the nea ...
... lateral geometries were compared: (1) W = 1200 µm and n = 6 (F = 72%) following [4,6], (2) W = 400 µm and n = 18 (F = 72%) following [5,8] and (3) W = 186 µm and n = 36 (F = 67%) following [8]. In each case, index-guiding trenches were etched on either side of each laser stripe, to stabilize the nea ...
KST92/KST93 PNP Epitaxial Silicon Transistor KS T92/KST9
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.