TLV431 - Diodes Incorporated
... too large that the voltage drop across them caused IREF affects the reference accuracy. The most frequent application of the TLV431 is in isolated low output voltage power supplies where the regulated output is galvanically isolated from the controller. As shown in Figure 2 the TLV431 drives current ...
... too large that the voltage drop across them caused IREF affects the reference accuracy. The most frequent application of the TLV431 is in isolated low output voltage power supplies where the regulated output is galvanically isolated from the controller. As shown in Figure 2 the TLV431 drives current ...
- Enphase Energy
... microinverter. Undersized conductors can cause the voltage measured at the microinverter to fall outside of the IEEE limits, triggering an ACVOOR condition. This results in loss of energy harvest. Although the National Electric Code recommends that branch circuit conductors be sized for a maximum of ...
... microinverter. Undersized conductors can cause the voltage measured at the microinverter to fall outside of the IEEE limits, triggering an ACVOOR condition. This results in loss of energy harvest. Although the National Electric Code recommends that branch circuit conductors be sized for a maximum of ...
FAN7083_GF085 High Side Gate Driver with Reset F
... input. It is designed for high voltage and high speed driving of MOSFET or IGBT, which operates up to 600V. Fairchild's highvoltage process and common-mode noise cancellation technique provide stable operation in the high side driver under high-dv/dt noise circumstances. An advanced level-shift circ ...
... input. It is designed for high voltage and high speed driving of MOSFET or IGBT, which operates up to 600V. Fairchild's highvoltage process and common-mode noise cancellation technique provide stable operation in the high side driver under high-dv/dt noise circumstances. An advanced level-shift circ ...
ADR525 数据手册DataSheet 下载
... silicon transistor base-emitter voltage (VBE) in the forward-biased operating region. All such transistors have approximately a −2 mV/°C temperature coefficient (TC), making them unsuitable for direct use as low temperature coefficient references. Extrapolation of the temperature characteristics of ...
... silicon transistor base-emitter voltage (VBE) in the forward-biased operating region. All such transistors have approximately a −2 mV/°C temperature coefficient (TC), making them unsuitable for direct use as low temperature coefficient references. Extrapolation of the temperature characteristics of ...
AP7173 1.5A LOW DROPOUT LINEAR REGULATOR WITH PROGRAMMABLE SOFT-START
... Power-Good pin, open-drain output. When the VOUT is below the PG threshold the PG pin is driven low; when the VOUT exceeds the threshold, the PG pin goes into a high-impedance state. To use the PG pin, use a 10kΩ to 1MΩ pull-up resistor to pull it up to a supply of up to 5.5V, which can be higher t ...
... Power-Good pin, open-drain output. When the VOUT is below the PG threshold the PG pin is driven low; when the VOUT exceeds the threshold, the PG pin goes into a high-impedance state. To use the PG pin, use a 10kΩ to 1MΩ pull-up resistor to pull it up to a supply of up to 5.5V, which can be higher t ...
Designer`s™ Data Sheet Insulated Gate Bipolar Transistor
... data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent ...
... data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent ...
Exploring dark current voltage characteristics of micromorph silicon
... n-doped layers were determined with temperature dependence of the dark conductivity as 0.072 and 0.045 eV, respectively. In these devices the corresponding condition to have a high forward current limited by SCLC and not by hole injection is that the sum of the p-c-Si: H activation energy and the v ...
... n-doped layers were determined with temperature dependence of the dark conductivity as 0.072 and 0.045 eV, respectively. In these devices the corresponding condition to have a high forward current limited by SCLC and not by hole injection is that the sum of the p-c-Si: H activation energy and the v ...
ZXMS6006SG Product Summary Features and Benefits
... 7. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation ...
... 7. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation ...
SMCJ5.0(C)A - SMCJ170(C)A
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
AN-9005 - Fairchild Semiconductor
... The RDS(ON) × QG, Figure Of Merit (FOM) is generally considered the single most important indicator of MOSFET performance in Switching Mode Power Supplies (SMPS). Therefore, several new technologies have been developed to improve the RDS(ON) × QG FOM. The super-junction device utilizing charge balan ...
... The RDS(ON) × QG, Figure Of Merit (FOM) is generally considered the single most important indicator of MOSFET performance in Switching Mode Power Supplies (SMPS). Therefore, several new technologies have been developed to improve the RDS(ON) × QG FOM. The super-junction device utilizing charge balan ...
LM2676 - Texas Instruments
... Junction to ambient thermal resistance for the 14-lead VSON mounted on a PCB copper area using 12 vias to a second layer of copper equal to die attach paddle. Additional copper area will reduce thermal resistance further. For layout recommendations, see Application Note AN-1187 Leadless Leadfram Pac ...
... Junction to ambient thermal resistance for the 14-lead VSON mounted on a PCB copper area using 12 vias to a second layer of copper equal to die attach paddle. Additional copper area will reduce thermal resistance further. For layout recommendations, see Application Note AN-1187 Leadless Leadfram Pac ...
High Power Flyback Controller with Primary
... During low power modes (when FSW < FSMP(max)), the internal SD terminal pull-up is disabled, and the terminal functions as a transient wake-up input. In this case, if the terminal is raised above VWAKE(rise) level, the device wakes from low power sleep mode (rather than waiting for the scheduled tim ...
... During low power modes (when FSW < FSMP(max)), the internal SD terminal pull-up is disabled, and the terminal functions as a transient wake-up input. In this case, if the terminal is raised above VWAKE(rise) level, the device wakes from low power sleep mode (rather than waiting for the scheduled tim ...
Atom-size gaps and contacts between electrodes
... bias is in sharp contrast to the simple Ohmic behavior of the atomic-scale contacts shown in Fig. 2共d兲. The current is also several orders of magnitude smaller than that for the atomicscale contacts. Repeated cycling of the bias voltage does not show any hysteresis in the current, indicating that th ...
... bias is in sharp contrast to the simple Ohmic behavior of the atomic-scale contacts shown in Fig. 2共d兲. The current is also several orders of magnitude smaller than that for the atomicscale contacts. Repeated cycling of the bias voltage does not show any hysteresis in the current, indicating that th ...
DESD3V3S1BL Features Mechanical Data
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
www.BDTIC.com/TI Using High-Speed CMOS and Advanced CMOS Logic in Systems With Multiple V
... www.BDTIC.com/TI ...
... www.BDTIC.com/TI ...
Current Mode PWM Controller for Forward and Flyback
... • Low startup−current: reaching a low no−load standby power represents a difficult exercise when the controller requires an external, lossy, resistor connected to the bulk capacitor. The start−up current is guaranteed to be less than 100 mA maximum, helping the designer to reach a low standby power ...
... • Low startup−current: reaching a low no−load standby power represents a difficult exercise when the controller requires an external, lossy, resistor connected to the bulk capacitor. The start−up current is guaranteed to be less than 100 mA maximum, helping the designer to reach a low standby power ...
Stay Alive for Soundtraxx Decoders including the
... WITHOUT the PTB-100, I CANNOT be read any CV Values with my NCE Power Pro system that I modified to be able to read the TSU-1000, that previously I could read CV Values of a TSU-1000 without a 4,700 uF Stay Alive Capacitor. This suggests that the 4,700 uF capacitor does “impact” on reading CVs. Mayb ...
... WITHOUT the PTB-100, I CANNOT be read any CV Values with my NCE Power Pro system that I modified to be able to read the TSU-1000, that previously I could read CV Values of a TSU-1000 without a 4,700 uF Stay Alive Capacitor. This suggests that the 4,700 uF capacitor does “impact” on reading CVs. Mayb ...
AN1048/D RC Snubber Networks For Thyristor Power Control and
... even though the pulse duration is very short. The rate of current rise is directly proportional to circuit voltage and inversely proportional to series inductance. The snubber is often the major offender because of its low inductance and close proximity to the thyristor. With no transient suppressor ...
... even though the pulse duration is very short. The rate of current rise is directly proportional to circuit voltage and inversely proportional to series inductance. The snubber is often the major offender because of its low inductance and close proximity to the thyristor. With no transient suppressor ...
AP7217
... to have excellent transient response for most applications with a small amount of output capacitance. The AP7217 is stable with any small ceramic output capacitors of 1.0μF or higher value, and the temperature coefficients of X7R or X5R type. Additional capacitance helps to reduce undershoot and ove ...
... to have excellent transient response for most applications with a small amount of output capacitance. The AP7217 is stable with any small ceramic output capacitors of 1.0μF or higher value, and the temperature coefficients of X7R or X5R type. Additional capacitance helps to reduce undershoot and ove ...
High-speed optical modulation based on carrier depletion in a
... between silicon and metal contacts, two slab regions ~1 µm away from both sides of the rib edge and the thin cap layer ~0.3 µm away from the rib edge are heavily doped with a dopant concentration of ~1x1020 cm-3. The process is designed to target the pn junction at approximately 0.4 um above the bur ...
... between silicon and metal contacts, two slab regions ~1 µm away from both sides of the rib edge and the thin cap layer ~0.3 µm away from the rib edge are heavily doped with a dopant concentration of ~1x1020 cm-3. The process is designed to target the pn junction at approximately 0.4 um above the bur ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.