ECE 2115: E
... 1. Generate an IC vs. VCE I-V curve for the 2N3904 BJT using the curve tracer. a. Set the Tektronix Model 571 Curve Tracer to generate three I-V curves for the transistor with the following limits: i. Limit IC to be no greater than 10mA. ii. Set VCE to be swept from 0V to 10V. iii. Step IB from 10µA ...
... 1. Generate an IC vs. VCE I-V curve for the 2N3904 BJT using the curve tracer. a. Set the Tektronix Model 571 Curve Tracer to generate three I-V curves for the transistor with the following limits: i. Limit IC to be no greater than 10mA. ii. Set VCE to be swept from 0V to 10V. iii. Step IB from 10µA ...
electrical drives
... attract electrons across the forward biased base/emitter junction to combine with the holes. However, because the emitter region is very heavily doped, many more electrons cross into the P type base region than are able to combine with the available holes. This means there is a large concentration o ...
... attract electrons across the forward biased base/emitter junction to combine with the holes. However, because the emitter region is very heavily doped, many more electrons cross into the P type base region than are able to combine with the available holes. This means there is a large concentration o ...
DATA SHEET PUMT1 PNP general purpose double transistor
... Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result i ...
... Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result i ...
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
... Figure 4a, indicates a reduction of the total resistance with decreasing gate voltage, a clear signature of its p-type characteristics. Consequently, few-layer phosphorene is a welcome addition to the family of 2D semiconductor materials since most pristine TMDs are either n-type or ambipolar as a c ...
... Figure 4a, indicates a reduction of the total resistance with decreasing gate voltage, a clear signature of its p-type characteristics. Consequently, few-layer phosphorene is a welcome addition to the family of 2D semiconductor materials since most pristine TMDs are either n-type or ambipolar as a c ...
Amateur Radio Technician Class Element 2 Course Presentation
... The effect of lead inductance in a capacitor used at VHF frequencies and above is that effective capacitance may be reduced because of the lead inductance. (G6A05) The resistance of a carbon resistor will change depending on the resistor's temperature coefficient rating if the ambient temperatur ...
... The effect of lead inductance in a capacitor used at VHF frequencies and above is that effective capacitance may be reduced because of the lead inductance. (G6A05) The resistance of a carbon resistor will change depending on the resistor's temperature coefficient rating if the ambient temperatur ...
Power Electronics
... Silicon Power diodes are the successors of Selenium rectifiers having significantly improved forward characteristics and voltage ratings. They are classified mainly by their turn-off (dynamic) characteristics Fig. 1.6. The minority carriers in the diodes require finite time - trr (reverse recovery t ...
... Silicon Power diodes are the successors of Selenium rectifiers having significantly improved forward characteristics and voltage ratings. They are classified mainly by their turn-off (dynamic) characteristics Fig. 1.6. The minority carriers in the diodes require finite time - trr (reverse recovery t ...
Sensitivity of narrow- and wideband LNA performance to individual transistor
... Department of Electrical, Electronic and Computer Engineering, University of Pretoria, Pretoria, South Africa; bChair for Electron Devices and Integrated Circuits, Dresden University of Technology, Dresden, Germany Although it is desirable for a transistor model to be as accurate as possible the ext ...
... Department of Electrical, Electronic and Computer Engineering, University of Pretoria, Pretoria, South Africa; bChair for Electron Devices and Integrated Circuits, Dresden University of Technology, Dresden, Germany Although it is desirable for a transistor model to be as accurate as possible the ext ...
TTL to RS232 adaptor Explained
... connecting it to your development PC or other devices may require the adaptor described above. New PCs are not including the old RS232 interface and if your PC does not have this interface you will need to use USB. You could purchase a USB to RS232 serial device which would be a versatile solution t ...
... connecting it to your development PC or other devices may require the adaptor described above. New PCs are not including the old RS232 interface and if your PC does not have this interface you will need to use USB. You could purchase a USB to RS232 serial device which would be a versatile solution t ...
Paper Title (use style: paper title)
... of generating these pulses is with a Marx generator. They can generate output pulses up to an amplitude of n times the supply voltage, with n being the number of stages [1]. When fast switching methods are used to connect the stages, the output pulse can achieve a very short rise time. Traditionally ...
... of generating these pulses is with a Marx generator. They can generate output pulses up to an amplitude of n times the supply voltage, with n being the number of stages [1]. When fast switching methods are used to connect the stages, the output pulse can achieve a very short rise time. Traditionally ...
Bias Current Effect on Gain of a CMOS OTA
... circuits. The reason is that the output capacitance plays the same role as the compensation capacitance [3]. This configuration also increases transconductance (g0) which in turns increases the gain of the amplifier. Today high performance and low power circuits are required that can be operated at ...
... circuits. The reason is that the output capacitance plays the same role as the compensation capacitance [3]. This configuration also increases transconductance (g0) which in turns increases the gain of the amplifier. Today high performance and low power circuits are required that can be operated at ...
DATA SHEET PMBT4401 NPN switching transistor
... Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result i ...
... Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result i ...
WP224 - 负偏置温度不稳定性(NBTI) 对 90 nm PMOS 的影响
... NBTI effect would be present on all PMOS transistors. NBTI affects not only the 250 nm I/O transistors, but also the mid-oxide 100 nm memory and pass gate devices, and the 90 nm logic circuits. It affects only the PMOS transistors and not the NMOS transistors. Simulations showed that the fabric spee ...
... NBTI effect would be present on all PMOS transistors. NBTI affects not only the 250 nm I/O transistors, but also the mid-oxide 100 nm memory and pass gate devices, and the 90 nm logic circuits. It affects only the PMOS transistors and not the NMOS transistors. Simulations showed that the fabric spee ...
Unit I
... b. The circuits have no static power dissipation, since the circuits are designed such that the pull-down and pull-up networks are mutually exclusive. c. The analysis of the DC voltage transfer characteristics and the noise margins is more complicated than for the inverter, as these parameters depen ...
... b. The circuits have no static power dissipation, since the circuits are designed such that the pull-down and pull-up networks are mutually exclusive. c. The analysis of the DC voltage transfer characteristics and the noise margins is more complicated than for the inverter, as these parameters depen ...
History of the transistor
A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. The vacuum-tube triode, also called a (thermionic) valve, was the transistor's precursor, introduced in 1907.