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4. Replace the BJT with one of its small-signal
4. Replace the BJT with one of its small-signal

... in series with the collector, the current gain of the common emitter transistor configuration is quite large as it is the ratio of Ic/Ib. A transistors current gain is given the Greek symbol of Beta, ( β ).As the emitter current for a common emitter configuration is defined as Ie = Ic + Ib, the rati ...
A 3-10 GHz Low-Noise Amplifier for Ultra
A 3-10 GHz Low-Noise Amplifier for Ultra

... applications. In the next section, we propose a modification to this circuit to broaden its operation band. III. ULTRA-WIDEBAND LNA DESIGN A few new LNA designs are reported in the literature for Ultra Wideband applications [2][3]. The first work uses a resistive feedback to achieve a broadband inpu ...
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Agilent Investigating Microvia Technology for 10 Gbps

... channel structure that allows higher frequencies to pass without significant degradation. This will inevitably result in an eye diagram that is more open, as will be shown shortly. The standard via, on the other hand, shows higher frequencies being attenuated more than the microvia. The second set o ...
DIFFERENTIAL PAIR:
DIFFERENTIAL PAIR:

... Now adjust the 10 k pot so that x and y are approximately near 0V. ...
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... There are three major noise and offset terms to consider in a current feedback amplifier. For offset errors, refer to the equation below. For noise error, the terms are root-sum-squared to give a net output error. In the circuit shown in Figure 5 they are input offset (VIO), which appears at the out ...
Ch 1. Amplifiers - University of Alabama
Ch 1. Amplifiers - University of Alabama

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EMC - CAS - Cern Accelerator School

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Aalborg Universitet A CMOS Power Amplifier using Ground Separation Technique

... high frequency gain. The load impedance for optimum power output was determined to approximately 10 -ll Q. The gate bias voltage was set to 0.75 V in the output stage. The driver stage transistor size is established after simulation of the output stage. To ensure that the driver stage doesn't enter ...
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User_Guide - ElecFreaks

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MECH 373 Instrumentation and Measurements Lecture 4

... • The degree of amplification is specified by a parameter called the gain, G. ...
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Chap_15_A

... Dispersion refers to the spreading of a signal due to the differences in speed between different frequency components. It is often detrimental to digital communication since digital pulses contain multiple frequency components. ...
Design and building of a 300 W MOSFET Push-Pull
Design and building of a 300 W MOSFET Push-Pull

... capacitors are equal in amplitude and in opposite directions. That point is then acting as a virtual ground, so that the ground connection can be omitted and one capacitor (of half value) instead of two can be used. The matching could be achieved by mean of a single low-pass matching section but thi ...
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RFFM3482Q

... (PABC), and a positive supply for switch control to simplify bias requirements. The RFFM3842Q FEM also has built in power detection. All inputs and outputs are internally matched to 50 except the WiFi receive path it is deferential with nominal impedance of 100 on each pin. 802.11b/g/n Transmit Pa ...
Improved Hybrid Amplifier Efficiency Using SiGe
Improved Hybrid Amplifier Efficiency Using SiGe

... The principle schematic is given in Fig. 1., which consists of an active device embedded in a tunable input- and output matching network. At the input a simple tunable LC configuration is used as pre-match for the active device. A two-stage LC-ladder topology has been utilized for the outputmatching ...
Complex Impedance Measurement Device for Alkaline Batteries
Complex Impedance Measurement Device for Alkaline Batteries

... circuits require severe current spikes. The voltage of batteries with high internal impedance suffers from fluctuations when high currents are applied. These fluctuations push the battery voltage towards the end of the discharge voltage (cut-off voltage), which eventuates in premature cut-off. Measu ...
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How To Measure Voltage - MIT Technology Review

... thermocouples, battery-powered devices, optical isolators, and isolation amplifiers. An instrument or device that has an isolated output is a floating signal source. The ground reference of a floating signal must be connected to the ground of the device to establish a local or onboard reference for ...
a new topological method for determination of the equivalent
a new topological method for determination of the equivalent

Applications Circuits: Current Measurement
Applications Circuits: Current Measurement

... To measure current on up to a 200V common mode voltage requires a special type of difference amplifier that can withstand unusually high CMV without damage—the INA117. A precision thin film resistor network on-chip divides down the input while simultaneously providing gain in the op amp to bring the ...
7a- Curr Meas Apps
7a- Curr Meas Apps

... To measure current on up to a 200V common mode voltage requires a special type of difference amplifier that can withstand unusually high CMV without damage—the INA117. A precision thin film resistor network on-chip divides down the input while simultaneously providing gain in the op amp to bring the ...
AD8012
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Directivity and VSWR Measurements

... VSWR and Return Loss A key performance metric for any microwave or RF network is how well the impedance of the load matches to the impedance of the source. This match determines how much power can be delivered and how much will be reflected back to the transmitter as measured by the return loss, or ...
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Scattering parameters

Scattering parameters or S-parameters (the elements of a scattering matrix or S-matrix) describe the electrical behavior of linear electrical networks when undergoing various steady state stimuli by electrical signals.The parameters are useful for electrical engineering, electronics engineering, and communication systems design, and especially for microwave engineering.The S-parameters are members of a family of similar parameters, other examples being: Y-parameters, Z-parameters, H-parameters, T-parameters or ABCD-parameters. They differ from these, in the sense that S-parameters do not use open or short circuit conditions to characterize a linear electrical network; instead, matched loads are used. These terminations are much easier to use at high signal frequencies than open-circuit and short-circuit terminations. Moreover, the quantities are measured in terms of power.Many electrical properties of networks of components (inductors, capacitors, resistors) may be expressed using S-parameters, such as gain, return loss, voltage standing wave ratio (VSWR), reflection coefficient and amplifier stability. The term 'scattering' is more common to optical engineering than RF engineering, referring to the effect observed when a plane electromagnetic wave is incident on an obstruction or passes across dissimilar dielectric media. In the context of S-parameters, scattering refers to the way in which the traveling currents and voltages in a transmission line are affected when they meet a discontinuity caused by the insertion of a network into the transmission line. This is equivalent to the wave meeting an impedance differing from the line's characteristic impedance.Although applicable at any frequency, S-parameters are mostly used for networks operating at radio frequency (RF) and microwave frequencies where signal power and energy considerations are more easily quantified than currents and voltages. S-parameters change with the measurement frequency, so frequency must be specified for any S-parameter measurements stated, in addition to the characteristic impedance or system impedance.S-parameters are readily represented in matrix form and obey the rules of matrix algebra.
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