ADP3155 5-Bit Programmable Triple Power Supply Controller for
... The ADP3155 uses a current-mode, constant-off-time control technique to switch a pair of external N-channel MOSFETs in a synchronous buck topology. Constant off-time operation offers several performance advantages, including that no slope compensation is required for stable operation. A unique featu ...
... The ADP3155 uses a current-mode, constant-off-time control technique to switch a pair of external N-channel MOSFETs in a synchronous buck topology. Constant off-time operation offers several performance advantages, including that no slope compensation is required for stable operation. A unique featu ...
BDTIC
... out of band compression. Another problem occurs when the FM transmitter is sending signals. The power amplifiers output signal levels can be up to 10 dBm. In a 50Ohm environment this wouldn’t be an issue but in mobile handsets it is. The FM transmitter must not use an external antenna instead it has ...
... out of band compression. Another problem occurs when the FM transmitter is sending signals. The power amplifiers output signal levels can be up to 10 dBm. In a 50Ohm environment this wouldn’t be an issue but in mobile handsets it is. The FM transmitter must not use an external antenna instead it has ...
harmonic reduction for three phase voltage source inverters
... wave that provides higher voltages with lower total harmonic distortion. The circuit model of a typical three-phase two level voltage source PWM inverter is shown in “Figure.1”. S1 to S6 are the six power switches [2] that shape the output. When an upper transistor is switched on, i.e. when a, b or ...
... wave that provides higher voltages with lower total harmonic distortion. The circuit model of a typical three-phase two level voltage source PWM inverter is shown in “Figure.1”. S1 to S6 are the six power switches [2] that shape the output. When an upper transistor is switched on, i.e. when a, b or ...
Preliminary Detail of Signal Input/Output Terminals
... The VB(*) voltage, which is the voltage difference between VB(U,V,W) and U,V,W, provides the supply to the HVICs within the IPM. This supply must be in the range of 13.0~18.5V to ensure that the HVICs can fully drive the upper side IGBTs. The IPM includes UV function for the VB(*) to ensure that the ...
... The VB(*) voltage, which is the voltage difference between VB(U,V,W) and U,V,W, provides the supply to the HVICs within the IPM. This supply must be in the range of 13.0~18.5V to ensure that the HVICs can fully drive the upper side IGBTs. The IPM includes UV function for the VB(*) to ensure that the ...
300V PT IGBT Technology
... needed because the drift region is less resistive compared to higher voltage PT IGBTs, so fewer minority carriers are injected into the drift region during conduction. The lower level of lifetime control results in a narrower distribution of VCE(on) compared to higher voltage IGBTs, and hence ...
... needed because the drift region is less resistive compared to higher voltage PT IGBTs, so fewer minority carriers are injected into the drift region during conduction. The lower level of lifetime control results in a narrower distribution of VCE(on) compared to higher voltage IGBTs, and hence ...
AN-1126: More Boost with Less Stress: the SEPIC
... High boost ratios impose both high voltage and high current stress on Q1. The MOSFET must be rated for full output voltage and relatively high current (translating to low RDS on). This results in a large MOSFET die which tends to be expensive and requires a strong gate driver. Switching losses are l ...
... High boost ratios impose both high voltage and high current stress on Q1. The MOSFET must be rated for full output voltage and relatively high current (translating to low RDS on). This results in a large MOSFET die which tends to be expensive and requires a strong gate driver. Switching losses are l ...
3V/5V Low-Power, Low-Noise, CMOS, Rail-to-Rail I/O Op Amps MAX9636/MAX9637/MAX9638 General Description Features
... CMOS input op amps. They feature wide bandwidth at low quiescent current, making them suitable for a broad range of battery-powered applications such as portable medical instruments, portable media players, and smoke detectors. A combination of extremely low input bias currents, low input current no ...
... CMOS input op amps. They feature wide bandwidth at low quiescent current, making them suitable for a broad range of battery-powered applications such as portable medical instruments, portable media players, and smoke detectors. A combination of extremely low input bias currents, low input current no ...
1. Introduction - facta universitatis
... at 2 GHz [1]. At submillimeter frequencies, 0:2W at 420 GHz with a GaAs/AlAs diode [2], and 0:3W at 712 GHz with an InAs/AlSb diode were reported [3]. Only if the power levels generated by these diodes are increased, will RTD's be useful in practical applications. As for any other solid state devi ...
... at 2 GHz [1]. At submillimeter frequencies, 0:2W at 420 GHz with a GaAs/AlAs diode [2], and 0:3W at 712 GHz with an InAs/AlSb diode were reported [3]. Only if the power levels generated by these diodes are increased, will RTD's be useful in practical applications. As for any other solid state devi ...
AP1539
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
Document
... The pn junction diode When a pn junction is formed, electrons in the n-material diffuse across the junction and recombine with holes in the p-material. This action continues until the voltage of the barrier repels further diffusion. Further diffusion across the barrier requires the application of a ...
... The pn junction diode When a pn junction is formed, electrons in the n-material diffuse across the junction and recombine with holes in the p-material. This action continues until the voltage of the barrier repels further diffusion. Further diffusion across the barrier requires the application of a ...
Power Module Design for an Ultra Efficient Three-Level Abstract :
... circuit’s reverse recovery behavior explains the lower turnon losses. The reverse recovery current through diode D1 boosts the current of transistor T1 at turn-on. The current is reduced during recovery, but the additional energy stored in the parasitic inductance Lparasitic causes an overvoltage at ...
... circuit’s reverse recovery behavior explains the lower turnon losses. The reverse recovery current through diode D1 boosts the current of transistor T1 at turn-on. The current is reduced during recovery, but the additional energy stored in the parasitic inductance Lparasitic causes an overvoltage at ...
RT6150A/B
... A capacitor with a value in the range of the calculated minimum should be used. This is required to maintain control loop stability. There are no additional requirements regarding minimum ESR. Low ESR capacitors should be used to minimize output voltage ripple. Larger capacitors will cause lower out ...
... A capacitor with a value in the range of the calculated minimum should be used. This is required to maintain control loop stability. There are no additional requirements regarding minimum ESR. Low ESR capacitors should be used to minimize output voltage ripple. Larger capacitors will cause lower out ...
TLC393-Q1 数据资料 dataSheet 下载
... residual dc offset. The signal is then applied to the inverting input of the comparator under test, while the noninverting input is driven by the output of the integrator formed by U1C through the voltage divider formed by R9 and R10. The loop reaches a stable operating point when the output of the ...
... residual dc offset. The signal is then applied to the inverting input of the comparator under test, while the noninverting input is driven by the output of the integrator formed by U1C through the voltage divider formed by R9 and R10. The loop reaches a stable operating point when the output of the ...
BP104, BP104S Silicon PIN Photodiode
... number of undesirable flaws in the crystal is reduced. This results in a higher quantum efficiency and thus higher radiation power. Distortions in the crystal are prevented by using mesa technology which leads to lower degradation. A further advantage of the mesa technology is that each individual c ...
... number of undesirable flaws in the crystal is reduced. This results in a higher quantum efficiency and thus higher radiation power. Distortions in the crystal are prevented by using mesa technology which leads to lower degradation. A further advantage of the mesa technology is that each individual c ...
MAX1573 White LED 1x/1.5x Charge Pump in UCSP and Thin QFN General Description
... switchover scheme has low hysteresis, minimizing operation in the less-efficient 1.5x mode. The 1x mode produces almost no ripple, while the 1.5x mode regulates the output voltage by controlling the rate at which the transfer capacitors are charged. In this way, the switching frequency remains const ...
... switchover scheme has low hysteresis, minimizing operation in the less-efficient 1.5x mode. The 1x mode produces almost no ripple, while the 1.5x mode regulates the output voltage by controlling the rate at which the transfer capacitors are charged. In this way, the switching frequency remains const ...
Introduction to Power Electronics Students Version
... • Power Electronics defined as the application of solidstate (devices) electronics for the control and conversion of electric power. • Power electronics have already found an important place in modern technology and are now used in a great variety of high-power product, including heat controls, ligh ...
... • Power Electronics defined as the application of solidstate (devices) electronics for the control and conversion of electric power. • Power electronics have already found an important place in modern technology and are now used in a great variety of high-power product, including heat controls, ligh ...
AN11119 Medium power small-signal MOSFETs in DC-to-DC conversion
... In modern electronic designs various supply voltages need to be generated. In most cases power supply provides one or a few different DC voltages. These voltages need to be converted to another voltage for several functional units in the application. Voltage conversion can work in both directions: i ...
... In modern electronic designs various supply voltages need to be generated. In most cases power supply provides one or a few different DC voltages. These voltages need to be converted to another voltage for several functional units in the application. Voltage conversion can work in both directions: i ...
Electromagnetic Interference Mitigation for Inverter fed AC Drives
... Switched Mode PWM inverter noise: Rapid change in voltage and current of a switching power converter EMI is in two forms: Radiated and conducted. The radiated EMI is emitted through free space to other equipments, while conducted EMI is transmitted via the circuit connection (Karthikeyan and Duraisw ...
... Switched Mode PWM inverter noise: Rapid change in voltage and current of a switching power converter EMI is in two forms: Radiated and conducted. The radiated EMI is emitted through free space to other equipments, while conducted EMI is transmitted via the circuit connection (Karthikeyan and Duraisw ...
A.D. Sagneri, D.I. Anderson, and D.J. Perreault, “Optimization of Integrated Transistors for Very High Frequency dc-dc Converters,” IEEE Transactions on Power Electronics , Vol. 28, No. 7, pp. 3614-3626, July 2013.
... this paper focuses on their improvement. The device losses that dominate in soft-switched VHF converters differ significantly from those of hard-switched operation. As a result only a small subset of commercially available power MOSFETs are suitable for this application. These tend to be discrete RF ...
... this paper focuses on their improvement. The device losses that dominate in soft-switched VHF converters differ significantly from those of hard-switched operation. As a result only a small subset of commercially available power MOSFETs are suitable for this application. These tend to be discrete RF ...
LTC1435 - High Efficiency Low Noise Synchronous Step
... The LTC1435 uses a constant frequency, current mode step-down architecture. During normal operation, the top MOSFET is turned on each cycle when the oscillator sets the RS latch, and turned off when the main current comparator I1 resets the RS latch. The peak inductor current at which I1 resets the ...
... The LTC1435 uses a constant frequency, current mode step-down architecture. During normal operation, the top MOSFET is turned on each cycle when the oscillator sets the RS latch, and turned off when the main current comparator I1 resets the RS latch. The peak inductor current at which I1 resets the ...
Transistor
.jpg?width=300){kind=spacer}
A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.